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5961-00-683-4644

20 Products

SV24

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006834644

NSN

5961-00-683-4644

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SV24

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006834644

NSN

5961-00-683-4644

MFG

GILBERT ENGINEERING CO INC/INCON SUB OF TRANSITRON ELECTRONIC CORP

Description

DESIGN CONTROL REFERENCE: SV24
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 03877
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

1N2095

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006834650

NSN

5961-00-683-4650

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1N2095

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006834650

NSN

5961-00-683-4650

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
NONDEFINITIVE SPEC/STD DATA: 1N2095 TYPE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD

T500

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006834650

NSN

5961-00-683-4650

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T500

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006834650

NSN

5961-00-683-4650

MFG

GRACE W R AND CO MALLORY ELECTRIC CORP DIV

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
NONDEFINITIVE SPEC/STD DATA: 1N2095 TYPE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD

190290-201

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006834692

NSN

5961-00-683-4692

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190290-201

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006834692

NSN

5961-00-683-4692

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

DESIGN CONTROL REFERENCE: 1N23ER
MANUFACTURERS CODE: 04655
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 BINDING POST
THE MANUFACTURERS DATA:

1N23ER

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006834692

NSN

5961-00-683-4692

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1N23ER

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006834692

NSN

5961-00-683-4692

MFG

GENERAL DYNAMICS C4 SYSTEMS INC.

Description

DESIGN CONTROL REFERENCE: 1N23ER
MANUFACTURERS CODE: 04655
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 BINDING POST
THE MANUFACTURERS DATA:

2JC2976H04

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006834692

NSN

5961-00-683-4692

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2JC2976H04

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006834692

NSN

5961-00-683-4692

MFG

WESTINGHOUSE ELECTRIC CORP

Description

DESIGN CONTROL REFERENCE: 1N23ER
MANUFACTURERS CODE: 04655
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 BINDING POST
THE MANUFACTURERS DATA:

6044835

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006834692

NSN

5961-00-683-4692

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6044835

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006834692

NSN

5961-00-683-4692

MFG

LOCKHEED MARTIN CORPORATION DBA MISSION SYSTEMS & SENSORS

Description

DESIGN CONTROL REFERENCE: 1N23ER
MANUFACTURERS CODE: 04655
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 BINDING POST
THE MANUFACTURERS DATA:

632475-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006834692

NSN

5961-00-683-4692

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632475-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006834692

NSN

5961-00-683-4692

MFG

LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN MS2

Description

DESIGN CONTROL REFERENCE: 1N23ER
MANUFACTURERS CODE: 04655
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 BINDING POST
THE MANUFACTURERS DATA:

661831

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006834692

NSN

5961-00-683-4692

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661831

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006834692

NSN

5961-00-683-4692

MFG

GOODRICH ACTUATION SYSTEM SAS

Description

DESIGN CONTROL REFERENCE: 1N23ER
MANUFACTURERS CODE: 04655
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 BINDING POST
THE MANUFACTURERS DATA:

661831-000

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006834692

NSN

5961-00-683-4692

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661831-000

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006834692

NSN

5961-00-683-4692

MFG

LUCAS FRANCE SA DIV AEROSPACE FRANCE

Description

DESIGN CONTROL REFERENCE: 1N23ER
MANUFACTURERS CODE: 04655
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 BINDING POST
THE MANUFACTURERS DATA:

CR216-12

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006834692

NSN

5961-00-683-4692

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CR216-12

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006834692

NSN

5961-00-683-4692

MFG

CONTINENTAL MICROWAVE AND TOOL CO. INC. DBA COBHAM SENSOR SYSTEMS

Description

DESIGN CONTROL REFERENCE: 1N23ER
MANUFACTURERS CODE: 04655
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 BINDING POST
THE MANUFACTURERS DATA:

IN23ER

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006834692

NSN

5961-00-683-4692

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IN23ER

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006834692

NSN

5961-00-683-4692

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

DESIGN CONTROL REFERENCE: 1N23ER
MANUFACTURERS CODE: 04655
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 BINDING POST
THE MANUFACTURERS DATA:

00686-0014-0

TRANSISTOR

NSN, MFG P/N

5961006834711

NSN

5961-00-683-4711

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00686-0014-0

TRANSISTOR

NSN, MFG P/N

5961006834711

NSN

5961-00-683-4711

MFG

ELECTRONIC ASSOCIATES INC

Description

DESIGN CONTROL REFERENCE: 2N174
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: PNP
MANUFACTURERS CODE: 16758
SEMICONDUCTOR MATERIAL: GERMANIUM
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 2 TAB, SOLDER LUG
THE MANUFACTURERS DATA:

2N174

TRANSISTOR

NSN, MFG P/N

5961006834711

NSN

5961-00-683-4711

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2N174

TRANSISTOR

NSN, MFG P/N

5961006834711

NSN

5961-00-683-4711

MFG

GENERAL MOTORS CORP DELCO ELECTRONICS DIV

Description

DESIGN CONTROL REFERENCE: 2N174
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: PNP
MANUFACTURERS CODE: 16758
SEMICONDUCTOR MATERIAL: GERMANIUM
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 2 TAB, SOLDER LUG
THE MANUFACTURERS DATA:

99031-55

TRANSISTOR

NSN, MFG P/N

5961006834711

NSN

5961-00-683-4711

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99031-55

TRANSISTOR

NSN, MFG P/N

5961006834711

NSN

5961-00-683-4711

MFG

CUMMINS INC.

Description

DESIGN CONTROL REFERENCE: 2N174
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: PNP
MANUFACTURERS CODE: 16758
SEMICONDUCTOR MATERIAL: GERMANIUM
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 2 TAB, SOLDER LUG
THE MANUFACTURERS DATA:

1N82AG

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006834777

NSN

5961-00-683-4777

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1N82AG

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006834777

NSN

5961-00-683-4777

MFG

SYLVANIA ELECTRIC PRODUCTS INC SEMICONDUCTOR PRODUCTS DIV

Description

CURRENT RATING PER CHARACTERISTIC: 15.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC AND 15.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.0 MAXIMUM REVERSE VOLTAGE, PEAK

20063

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006834777

NSN

5961-00-683-4777

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20063

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006834777

NSN

5961-00-683-4777

MFG

WHITTAKER CORP WHITTAKER ELECTRONIC SYSTEMS DIV

Description

CURRENT RATING PER CHARACTERISTIC: 15.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC AND 15.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.0 MAXIMUM REVERSE VOLTAGE, PEAK

9101535

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006834777

NSN

5961-00-683-4777

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9101535

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006834777

NSN

5961-00-683-4777

MFG

U S ARMY AVIATION AND MISSILE COMMAND

Description

CURRENT RATING PER CHARACTERISTIC: 15.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC AND 15.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.0 MAXIMUM REVERSE VOLTAGE, PEAK

240SM

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006835858

NSN

5961-00-683-5858

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240SM

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006835858

NSN

5961-00-683-5858

MFG

ST-SEMICON INC

Description

DESIGN CONTROL REFERENCE: 240SM
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 51589
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

2N1048

TRANSISTOR

NSN, MFG P/N

5961006858465

NSN

5961-00-685-8465

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2N1048

TRANSISTOR

NSN, MFG P/N

5961006858465

NSN

5961-00-685-8465

MFG

RAYTHEON COMPANY

Description

DESIGN CONTROL REFERENCE: 2N1048
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
MANUFACTURERS CODE: 96214
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG
THE MANUFACTURERS DATA: