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5961-00-824-8449

20 Products

148585

TRANSISTOR

NSN, MFG P/N

5961008248449

NSN

5961-00-824-8449

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148585

TRANSISTOR

NSN, MFG P/N

5961008248449

NSN

5961-00-824-8449

MFG

FLUKE CORPORATION

Description

CURRENT RATING PER CHARACTERISTIC: -200.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN2N396A
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: BASE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 81349
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MILS19500-64
OVERALL DIAMETER: 0.290 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.200 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/64 GOVERNMENT SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.190 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED

2N396A

TRANSISTOR

NSN, MFG P/N

5961008248449

NSN

5961-00-824-8449

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2N396A

TRANSISTOR

NSN, MFG P/N

5961008248449

NSN

5961-00-824-8449

MFG

RCA CORP RECEIVING TUBE DIV

Description

CURRENT RATING PER CHARACTERISTIC: -200.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN2N396A
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: BASE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 81349
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MILS19500-64
OVERALL DIAMETER: 0.290 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.200 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/64 GOVERNMENT SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.190 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED

5L5511-102-29

TRANSISTOR

NSN, MFG P/N

5961008248449

NSN

5961-00-824-8449

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5L5511-102-29

TRANSISTOR

NSN, MFG P/N

5961008248449

NSN

5961-00-824-8449

MFG

EADS DEUTSCHLAND GMBH -VERTEIDIGUNG UND ZIVILE SYSTEME-

Description

CURRENT RATING PER CHARACTERISTIC: -200.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN2N396A
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: BASE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 81349
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MILS19500-64
OVERALL DIAMETER: 0.290 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.200 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/64 GOVERNMENT SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.190 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED

DMS 89127B

TRANSISTOR

NSN, MFG P/N

5961008248449

NSN

5961-00-824-8449

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DMS 89127B

TRANSISTOR

NSN, MFG P/N

5961008248449

NSN

5961-00-824-8449

MFG

DLA LAND AND MARITIME

Description

CURRENT RATING PER CHARACTERISTIC: -200.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN2N396A
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: BASE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 81349
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MILS19500-64
OVERALL DIAMETER: 0.290 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.200 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/64 GOVERNMENT SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.190 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED

JAN2N396A

TRANSISTOR

NSN, MFG P/N

5961008248449

NSN

5961-00-824-8449

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JAN2N396A

TRANSISTOR

NSN, MFG P/N

5961008248449

NSN

5961-00-824-8449

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

CURRENT RATING PER CHARACTERISTIC: -200.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN2N396A
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: BASE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 81349
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MILS19500-64
OVERALL DIAMETER: 0.290 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.200 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/64 GOVERNMENT SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.190 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED

2N535

TRANSISTOR

NSN, MFG P/N

5961008248450

NSN

5961-00-824-8450

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2N535

TRANSISTOR

NSN, MFG P/N

5961008248450

NSN

5961-00-824-8450

MFG

LOCKHEED MARTIN CORPORATION DIV LOCKHEED MARTIN INTEGRATED SYSTEMS & SOLUTIONS

Description

CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC AND 10.00 MICROAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, EMITTER OPEN
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.115 INCHES MAXIMUM
OVERALL LENGTH: 0.180 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 50.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA: 80131-RELEASE2417 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.052 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 20.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE

2N535B

TRANSISTOR

NSN, MFG P/N

5961008248450

NSN

5961-00-824-8450

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2N535B

TRANSISTOR

NSN, MFG P/N

5961008248450

NSN

5961-00-824-8450

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC AND 10.00 MICROAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, EMITTER OPEN
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.115 INCHES MAXIMUM
OVERALL LENGTH: 0.180 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 50.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA: 80131-RELEASE2417 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.052 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 20.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE

11031508-1

TRANSISTOR

NSN, MFG P/N

5961008248451

NSN

5961-00-824-8451

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11031508-1

TRANSISTOR

NSN, MFG P/N

5961008248451

NSN

5961-00-824-8451

MFG

U S ARMY AVIATION AND MISSILE COMMAND

Description

CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC AND 50.00 MILLIAMPERES MAXIMUM EMITTER CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 80.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.240 INCHES NOMINAL
OVERALL LENGTH: 0.410 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 100.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 80131-RELEASE2306 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 25.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN

1851-0035

TRANSISTOR

NSN, MFG P/N

5961008248451

NSN

5961-00-824-8451

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1851-0035

TRANSISTOR

NSN, MFG P/N

5961008248451

NSN

5961-00-824-8451

MFG

AGILENT TECHNOLOGIES INC. DIV AGILENT TECHNOLOGIES HEADQUARTERS

Description

CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC AND 50.00 MILLIAMPERES MAXIMUM EMITTER CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 80.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.240 INCHES NOMINAL
OVERALL LENGTH: 0.410 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 100.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 80131-RELEASE2306 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 25.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN

2N647

TRANSISTOR

NSN, MFG P/N

5961008248451

NSN

5961-00-824-8451

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2N647

TRANSISTOR

NSN, MFG P/N

5961008248451

NSN

5961-00-824-8451

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC AND 50.00 MILLIAMPERES MAXIMUM EMITTER CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 80.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.240 INCHES NOMINAL
OVERALL LENGTH: 0.410 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 100.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 80131-RELEASE2306 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 25.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN

128C569H01

TRANSISTOR

NSN, MFG P/N

5961008248462

NSN

5961-00-824-8462

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128C569H01

TRANSISTOR

NSN, MFG P/N

5961008248462

NSN

5961-00-824-8462

MFG

NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN SYSTEMS CORPORATION ELECTRONIC SYSTEMS

Description

CURRENT RATING PER CHARACTERISTIC: 1.50 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 0.320 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.437 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 11.6 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 65.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 40.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 4.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC

SS3572H

TRANSISTOR

NSN, MFG P/N

5961008248462

NSN

5961-00-824-8462

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SS3572H

TRANSISTOR

NSN, MFG P/N

5961008248462

NSN

5961-00-824-8462

MFG

FREESCALE SEMICONDUCTOR INC.

Description

CURRENT RATING PER CHARACTERISTIC: 1.50 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 0.320 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.437 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 11.6 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 65.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 40.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 4.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC

576R046H02

TRANSISTOR

NSN, MFG P/N

5961008248480

NSN

5961-00-824-8480

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576R046H02

TRANSISTOR

NSN, MFG P/N

5961008248480

NSN

5961-00-824-8480

MFG

NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN SYSTEMS CORPORATION ELECTRONIC SYSTEMS

Description

CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM EMITTER CUTOFF CURRENT, DC, COLLECTOR OPEN
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND MOUNTING HARDWARE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.312 INCHES
OVERALL DIAMETER: 1.280 INCHES NOMINAL
OVERALL LENGTH: 0.410 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -150.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, WITH SPECIFIED RESISTANCE BETWEEN BASE AND EMITTER AND 2.5 MAXIMUM BASE TO EMITTER VOLTAGE, DC AND 2.5 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC

2W498

TRANSISTOR

NSN, MFG P/N

5961008248482

NSN

5961-00-824-8482

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2W498

TRANSISTOR

NSN, MFG P/N

5961008248482

NSN

5961-00-824-8482

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.220 INCHES MAXIMUM
OVERALL LENGTH: 0.185 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC AND 3.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC

575R396H02

TRANSISTOR

NSN, MFG P/N

5961008248482

NSN

5961-00-824-8482

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575R396H02

TRANSISTOR

NSN, MFG P/N

5961008248482

NSN

5961-00-824-8482

MFG

NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN SYSTEMS CORPORATION ELECTRONIC SYSTEMS

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.220 INCHES MAXIMUM
OVERALL LENGTH: 0.185 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC AND 3.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC

2W335

TRANSISTOR

NSN, MFG P/N

5961008248483

NSN

5961-00-824-8483

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2W335

TRANSISTOR

NSN, MFG P/N

5961008248483

NSN

5961-00-824-8483

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

DESIGN CONTROL REFERENCE: 575R463H04
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
MANUFACTURERS CODE: 79500
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

575R463H04

TRANSISTOR

NSN, MFG P/N

5961008248483

NSN

5961-00-824-8483

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575R463H04

TRANSISTOR

NSN, MFG P/N

5961008248483

NSN

5961-00-824-8483

MFG

WESTINGHOUSE ELECTRIC CORP

Description

DESIGN CONTROL REFERENCE: 575R463H04
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
MANUFACTURERS CODE: 79500
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

575R523H02

TRANSISTOR

NSN, MFG P/N

5961008248486

NSN

5961-00-824-8486

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575R523H02

TRANSISTOR

NSN, MFG P/N

5961008248486

NSN

5961-00-824-8486

MFG

NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN SYSTEMS CORPORATION ELECTRONIC SYSTEMS

Description

CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.400 INCHES MAXIMUM
OVERALL LENGTH: 0.150 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 8.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN

ST4021

TRANSISTOR

NSN, MFG P/N

5961008248486

NSN

5961-00-824-8486

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ST4021

TRANSISTOR

NSN, MFG P/N

5961008248486

NSN

5961-00-824-8486

MFG

GILBERT ENGINEERING CO INC/INCON SUB OF TRANSITRON ELECTRONIC CORP

Description

CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.400 INCHES MAXIMUM
OVERALL LENGTH: 0.150 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 8.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN

2W333

TRANSISTOR

NSN, MFG P/N

5961008248487

NSN

5961-00-824-8487

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2W333

TRANSISTOR

NSN, MFG P/N

5961008248487

NSN

5961-00-824-8487

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE GOLD
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 40.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC AND 1.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC