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5961-00-888-5468
20 Products
025-3-01-048
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008885468
NSN
5961-00-888-5468
025-3-01-048
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008885468
NSN
5961-00-888-5468
MFG
L-3 COMMUNICATIONS CORPORATION DBA L3 COMMUNICATION AVIATION RECORDERS DIVISION DIV L3 COMMUNICATIONS CORPORATION AVIATION RECORDERS DIVISION
Description
CURRENT RATING PER CHARACTERISTIC: 300.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.094 INCHES NOMINAL
OVERALL LENGTH: 0.266 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 125.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
T1145A1
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961008880472
NSN
5961-00-888-0472
T1145A1
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961008880472
NSN
5961-00-888-0472
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
CURRENT RATING PER CHARACTERISTIC: 30.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: ANODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 105.0 DEG CELSIUS CASE
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM BREAKOVER VOLTAGE, DC
Related Searches:
00185-0130
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008880504
NSN
5961-00-888-0504
00185-0130
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008880504
NSN
5961-00-888-0504
MFG
HARSCO CORP BMY-COMBAT SYSTEMS DIV
Description
CURRENT RATING PER CHARACTERISTIC: 25.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.200 INCHES NOMINAL
OVERALL LENGTH: 0.375 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 10.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
1R10B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008880504
NSN
5961-00-888-0504
MFG
SOLITRON DEVICES INC.
Description
CURRENT RATING PER CHARACTERISTIC: 25.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.200 INCHES NOMINAL
OVERALL LENGTH: 0.375 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 10.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
RE17
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008881329
NSN
5961-00-888-1329
MFG
FLUKE CORPORATION
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
2068208-701
TRANSISTOR
NSN, MFG P/N
5961008881341
NSN
5961-00-888-1341
MFG
HONEYWELL INTERNATIONAL INC DBA HONEYWELL
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: PNP
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 165.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.125 INCHES MINIMUM AND 0.165 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
OVERALL WIDTH: 0.175 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 350.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 4.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
MPS6516
TRANSISTOR
NSN, MFG P/N
5961008881341
NSN
5961-00-888-1341
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: PNP
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 165.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.125 INCHES MINIMUM AND 0.165 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
OVERALL WIDTH: 0.175 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 350.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 4.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
158188
PAD,TRANSISTOR
NSN, MFG P/N
5961008883015
NSN
5961-00-888-3015
MFG
CEC VIBRATION PRODUCTS INC.
Description
PAD,TRANSISTOR
Related Searches:
55-0099-2
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961008884980
NSN
5961-00-888-4980
55-0099-2
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961008884980
NSN
5961-00-888-4980
MFG
GRIMES AEROSPACE COMPANY DBA HONEYWELL
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: ANODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.076 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPNP
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM BREAKOVER VOLTAGE, DC AND 500.0 MAXIMUM FORWARD VOLTAGE, PEAK
Related Searches:
AD1018
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961008884980
NSN
5961-00-888-4980
AD1018
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961008884980
NSN
5961-00-888-4980
MFG
MICRO USPD INC
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: ANODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.076 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPNP
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM BREAKOVER VOLTAGE, DC AND 500.0 MAXIMUM FORWARD VOLTAGE, PEAK
Related Searches:
C5FX210
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961008884980
NSN
5961-00-888-4980
C5FX210
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961008884980
NSN
5961-00-888-4980
MFG
GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT POWER COMPONENTS OPN
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: ANODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.076 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPNP
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM BREAKOVER VOLTAGE, DC AND 500.0 MAXIMUM FORWARD VOLTAGE, PEAK
Related Searches:
2125405
TRANSISTOR
NSN, MFG P/N
5961008885451
NSN
5961-00-888-5451
MFG
NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-18
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 30.0 MAXI
Related Searches:
2N2432
TRANSISTOR
NSN, MFG P/N
5961008885451
NSN
5961-00-888-5451
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-18
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 30.0 MAXI
Related Searches:
2527470
TRANSISTOR
NSN, MFG P/N
5961008885452
NSN
5961-00-888-5452
MFG
NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-72
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 12.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
3N77
TRANSISTOR
NSN, MFG P/N
5961008885452
NSN
5961-00-888-5452
MFG
NATIONAL SEMICONDUCTOR CORP
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-72
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 12.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
2635054
TRANSISTOR
NSN, MFG P/N
5961008885458
NSN
5961-00-888-5458
MFG
NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER
Description
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-18
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.210 INCHES NOMINAL
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 10001-2635054 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND -50.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND -50.0 MA
Related Searches:
3N136
TRANSISTOR
NSN, MFG P/N
5961008885458
NSN
5961-00-888-5458
MFG
CRYSTALONICS INC.
Description
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-18
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.210 INCHES NOMINAL
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 10001-2635054 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND -50.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND -50.0 MA
Related Searches:
2520533
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008885468
NSN
5961-00-888-5468
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DBA NORTHROP GRMMAN NORDEN SYSTEMS DIV NAVAL AND MARINE SYSTEMS DIVISION
Description
CURRENT RATING PER CHARACTERISTIC: 300.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.094 INCHES NOMINAL
OVERALL LENGTH: 0.266 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 125.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
2635012
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008885468
NSN
5961-00-888-5468
MFG
NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER
Description
CURRENT RATING PER CHARACTERISTIC: 300.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.094 INCHES NOMINAL
OVERALL LENGTH: 0.266 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 125.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
272252
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008885468
NSN
5961-00-888-5468
MFG
FLUKE CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 300.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.094 INCHES NOMINAL
OVERALL LENGTH: 0.266 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 125.0 MAXIMUM REVERSE VOLTAGE, PEAK
