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5961-01-048-7025
20 Products
353-6519-020
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010487025
NSN
5961-01-048-7025
353-6519-020
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010487025
NSN
5961-01-048-7025
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
SEMICONDUCTOR DEVICE,DIODE
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CR033
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010487080
NSN
5961-01-048-7080
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, MAXIMUM PEAK TOTAL VALUE AND 50.00 MILLIAMPERES MAXIMUM REVERSE CURRENT, AVERAGE
OVERALL LENGTH: 0.190 INCHES NOMINAL
OVERALL WIDTH: 0.219 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 1.2 WATTS MAXIMUM TOTAL POWER DISSIPATION
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM ON-STATE VOLTAGE, PEAK
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N62-00064
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010487080
NSN
5961-01-048-7080
MFG
DIEHL AVIONIK SYSTEME GMBH -STANDORT FRANKFURT-
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, MAXIMUM PEAK TOTAL VALUE AND 50.00 MILLIAMPERES MAXIMUM REVERSE CURRENT, AVERAGE
OVERALL LENGTH: 0.190 INCHES NOMINAL
OVERALL WIDTH: 0.219 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 1.2 WATTS MAXIMUM TOTAL POWER DISSIPATION
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM ON-STATE VOLTAGE, PEAK
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MV1650
SEMICONDUCTOR DEVIC
NSN, MFG P/N
5961010487223
NSN
5961-01-048-7223
MFG
R F PRODUCTS INC
Description
SEMICONDUCTOR DEVIC
Related Searches:
40251
TRANSISTOR
NSN, MFG P/N
5961010487354
NSN
5961-01-048-7354
MFG
SWITCHCRAFT INC.
Description
TRANSISTOR
Related Searches:
7210112-002
TRANSISTOR
NSN, MFG P/N
5961010487355
NSN
5961-01-048-7355
MFG
COHU INC
Description
TRANSISTOR
Related Searches:
E211
TRANSISTOR
NSN, MFG P/N
5961010487355
NSN
5961-01-048-7355
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
TRANSISTOR
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33002A-H54
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010487658
NSN
5961-01-048-7658
33002A-H54
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010487658
NSN
5961-01-048-7658
MFG
AGILENT TECHNOLOGIES INC. DIV LOVELAND MANUFACTURING CENTER
Description
CURRENT RATING PER CHARACTERISTIC: 0.50 AMPERES MAXIMUM FORWARD CURRENT, DC
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 110.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: THREADED STUD AND UNTHREADED HOLE
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL DIAMETER: 0.312 INCHES NOMINAL
OVERALL LENGTH: 2.390 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 0.5 WATTS NOMINAL TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED HOLE AND 1 THREADED STUD
THREAD QUANTITY PER INCH: 36
THREAD SERIES DESIGNATOR: UNS
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM REVERSE VOLTAGE, DC
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6091882-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010487658
NSN
5961-01-048-7658
MFG
LOCKHEED MARTIN CORPORATION DBA MISSION SYSTEMS & SENSORS
Description
CURRENT RATING PER CHARACTERISTIC: 0.50 AMPERES MAXIMUM FORWARD CURRENT, DC
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 110.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: THREADED STUD AND UNTHREADED HOLE
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL DIAMETER: 0.312 INCHES NOMINAL
OVERALL LENGTH: 2.390 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 0.5 WATTS NOMINAL TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED HOLE AND 1 THREADED STUD
THREAD QUANTITY PER INCH: 36
THREAD SERIES DESIGNATOR: UNS
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM REVERSE VOLTAGE, DC
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DMS 82085B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010487658
NSN
5961-01-048-7658
DMS 82085B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010487658
NSN
5961-01-048-7658
MFG
DLA LAND AND MARITIME
Description
CURRENT RATING PER CHARACTERISTIC: 0.50 AMPERES MAXIMUM FORWARD CURRENT, DC
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 110.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: THREADED STUD AND UNTHREADED HOLE
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL DIAMETER: 0.312 INCHES NOMINAL
OVERALL LENGTH: 2.390 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 0.5 WATTS NOMINAL TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED HOLE AND 1 THREADED STUD
THREAD QUANTITY PER INCH: 36
THREAD SERIES DESIGNATOR: UNS
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM REVERSE VOLTAGE, DC
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6097083-1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010487734
NSN
5961-01-048-7734
6097083-1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010487734
NSN
5961-01-048-7734
MFG
LOCKHEED MARTIN CORPORATION DBA MISSION SYSTEMS & SENSORS
Description
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
FEATURES PROVIDED: BURN IN AND HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: PRESS FIT
OVERALL HEIGHT: 0.030 INCHES MINIMUM AND 0.080 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.290 INCHES MAXIMUM
OVERALL WIDTH: 0.115 INCHES MINIMUM AND 0.160 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 350.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 6 RIBBON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 15.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC ALL TRANSISTOR
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SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010487734
NSN
5961-01-048-7734
SD2118H
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010487734
NSN
5961-01-048-7734
MFG
FREESCALE SEMICONDUCTOR INC.
Description
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
FEATURES PROVIDED: BURN IN AND HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: PRESS FIT
OVERALL HEIGHT: 0.030 INCHES MINIMUM AND 0.080 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.290 INCHES MAXIMUM
OVERALL WIDTH: 0.115 INCHES MINIMUM AND 0.160 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 350.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 6 RIBBON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 15.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC ALL TRANSISTOR
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517-806
TRANSISTOR
NSN, MFG P/N
5961010487735
NSN
5961-01-048-7735
MFG
GENERAL SEMICONDUCTOR INC
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL INSULATED GATE TYPE
(NON-CORE DATA) DUMMY TERMINAL QUANTITY: 10
CURRENT RATING PER CHARACTERISTIC: -250.00 MILLIAMPERES MAXIMUM DRAIN CURRENT
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.030 INCHES MINIMUM AND 0.070 INCHES MAXIMUM
OVERALL LENGTH: 0.360 INCHES MINIMUM AND 0.410 INCHES MAXIMUM
OVERALL WIDTH: 0.240 INCHES MINIMUM AND 0.270 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 14 RIBBON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -30.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND -25.0 MAXIMUM GATE TO SOURCE VOLTAGE AND -25.0 MAXIMUM DRAIN TO GATE VOLTAGE
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6088971-1
TRANSISTOR
NSN, MFG P/N
5961010487735
NSN
5961-01-048-7735
MFG
LOCKHEED MARTIN CORPORATION DBA MISSION SYSTEMS & SENSORS
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL INSULATED GATE TYPE
(NON-CORE DATA) DUMMY TERMINAL QUANTITY: 10
CURRENT RATING PER CHARACTERISTIC: -250.00 MILLIAMPERES MAXIMUM DRAIN CURRENT
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.030 INCHES MINIMUM AND 0.070 INCHES MAXIMUM
OVERALL LENGTH: 0.360 INCHES MINIMUM AND 0.410 INCHES MAXIMUM
OVERALL WIDTH: 0.240 INCHES MINIMUM AND 0.270 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 14 RIBBON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -30.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND -25.0 MAXIMUM GATE TO SOURCE VOLTAGE AND -25.0 MAXIMUM DRAIN TO GATE VOLTAGE
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DMS 80064B
TRANSISTOR
NSN, MFG P/N
5961010487735
NSN
5961-01-048-7735
MFG
DLA LAND AND MARITIME
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL INSULATED GATE TYPE
(NON-CORE DATA) DUMMY TERMINAL QUANTITY: 10
CURRENT RATING PER CHARACTERISTIC: -250.00 MILLIAMPERES MAXIMUM DRAIN CURRENT
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.030 INCHES MINIMUM AND 0.070 INCHES MAXIMUM
OVERALL LENGTH: 0.360 INCHES MINIMUM AND 0.410 INCHES MAXIMUM
OVERALL WIDTH: 0.240 INCHES MINIMUM AND 0.270 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 14 RIBBON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -30.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND -25.0 MAXIMUM GATE TO SOURCE VOLTAGE AND -25.0 MAXIMUM DRAIN TO GATE VOLTAGE
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6088969-1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010487737
NSN
5961-01-048-7737
6088969-1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010487737
NSN
5961-01-048-7737
MFG
LOCKHEED MARTIN CORPORATION DBA MISSION SYSTEMS & SENSORS
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL INSULATED GATE TYPE
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: -50.00 MILLIAMPERES MAXIMUM DRAIN CURRENT ALL TRANSISTOR
FEATURES PROVIDED: GOLD PLATED LEADS AND HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: SWITCHING
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACES GOLD
INCLOSURE MATERIAL: METAL OR PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.040 INCHES MINIMUM AND 0.050 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES MINIMUM AND 0.275 INCHES MAXIMUM
OVERALL WIDTH: 0.155 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL TYPE AND QUANTITY: 6 RIBBON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -30.0 MAXIMUM DRAIN TO
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SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010487737
NSN
5961-01-048-7737
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL INSULATED GATE TYPE
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: -50.00 MILLIAMPERES MAXIMUM DRAIN CURRENT ALL TRANSISTOR
FEATURES PROVIDED: GOLD PLATED LEADS AND HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: SWITCHING
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACES GOLD
INCLOSURE MATERIAL: METAL OR PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.040 INCHES MINIMUM AND 0.050 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES MINIMUM AND 0.275 INCHES MAXIMUM
OVERALL WIDTH: 0.155 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL TYPE AND QUANTITY: 6 RIBBON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -30.0 MAXIMUM DRAIN TO
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S2270
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010487737
NSN
5961-01-048-7737
MFG
SOLITRON DEVICES INC.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL INSULATED GATE TYPE
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: -50.00 MILLIAMPERES MAXIMUM DRAIN CURRENT ALL TRANSISTOR
FEATURES PROVIDED: GOLD PLATED LEADS AND HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: SWITCHING
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACES GOLD
INCLOSURE MATERIAL: METAL OR PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.040 INCHES MINIMUM AND 0.050 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES MINIMUM AND 0.275 INCHES MAXIMUM
OVERALL WIDTH: 0.155 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL TYPE AND QUANTITY: 6 RIBBON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -30.0 MAXIMUM DRAIN TO
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900-014-493
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010487738
NSN
5961-01-048-7738
900-014-493
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010487738
NSN
5961-01-048-7738
MFG
RAYMOND CORPORATION THE
Description
COMPONENT NAME AND QUANTITY: 3 SEMICONDUCTOR DEVICE DIODE
OVERALL DIAMETER: 0.750 INCHES NOMINAL
OVERALL LENGTH: 1.250 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
Related Searches:
9999-0102-001
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010487739
NSN
5961-01-048-7739
9999-0102-001
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010487739
NSN
5961-01-048-7739
MFG
FLIGHTLINE ELECTRONICS INC. DBA ULTRA ELEC FLIGHTLINE SYSTEMS DIV ULTRA ELECTRONICS FLIGHTLINE SYSTEMS
Description
COMPONENT NAME AND QUANTITY: 7 LIGHT EMITTING DIODE
CURRENT RATING PER CHARACTERISTIC: 3.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT ALL LIGHT EMITTING DIODE
OVERALL HEIGHT: 0.170 INCHES NOMINAL
OVERALL LENGTH: 0.800 INCHES NOMINAL
OVERALL WIDTH: 0.400 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 105.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL LIGHT EMITTING DIODE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.0 MAXIMUM NOMINAL REGULATOR VOLTAGE ALL LIGHT EMITTING DIODE
