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5961-01-029-5450
20 Products
247ASC0942-001
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010295450
NSN
5961-01-029-5450
247ASC0942-001
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010295450
NSN
5961-01-029-5450
MFG
NAVAL AIR SYSTEMS COMMAND
Description
COMPONENT NAME AND QUANTITY: 8 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 350.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC ALL SEMICONDUCTOR DEVICE DIODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 600.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL SEMICONDUCTOR DEVICE DIODE
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
SPECIAL FEATURES: ALL SEMICONDUCTOR DEVICE DIODE JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL CIRCLE DIAMETER: 0.230 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 9 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 55.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE ALL SEMICONDUCTOR DEVICE DIODE_
Related Searches:
2500753
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010294044
NSN
5961-01-029-4044
2500753
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010294044
NSN
5961-01-029-4044
MFG
MICRO USPD INC
Description
COMPONENT NAME AND QUANTITY: 9 SEMICONDUCTOR DEVICE DIODE
MANUFACTURERS CODE: 16236
MFR SOURCE CONTROLLING REFERENCE: 2500753 10001
MOUNTING FACILITY QUANTITY: 4
MOUNTING METHOD: THREADED HOLE
NOMINAL THREAD SIZE: 0.138 INCHES
OVERALL HEIGHT: 0.812 INCHES NOMINAL
OVERALL LENGTH: 9.500 INCHES NOMINAL
OVERALL WIDTH: 2.000 INCHES NOMINAL
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 5 TURRET
THREAD SERIES DESIGNATOR: UNC
Related Searches:
2500753 10001
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010294044
NSN
5961-01-029-4044
2500753 10001
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010294044
NSN
5961-01-029-4044
MFG
DLA LAND AND MARITIME
Description
COMPONENT NAME AND QUANTITY: 9 SEMICONDUCTOR DEVICE DIODE
MANUFACTURERS CODE: 16236
MFR SOURCE CONTROLLING REFERENCE: 2500753 10001
MOUNTING FACILITY QUANTITY: 4
MOUNTING METHOD: THREADED HOLE
NOMINAL THREAD SIZE: 0.138 INCHES
OVERALL HEIGHT: 0.812 INCHES NOMINAL
OVERALL LENGTH: 9.500 INCHES NOMINAL
OVERALL WIDTH: 2.000 INCHES NOMINAL
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 5 TURRET
THREAD SERIES DESIGNATOR: UNC
Related Searches:
2887851-1
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961010294490
NSN
5961-01-029-4490
2887851-1
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961010294490
NSN
5961-01-029-4490
MFG
NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 150.00 MILLIAMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 10000.0 REVERSE VOLTAGE, INSTANTANEOUS
CIRCUIT CONNECTION STYLE DESIGNATOR: 8 BRIDGE 3 PHASE
MATERIAL: SILICON
MOUNTING METHOD: THREADED HOLE
OPERATING TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.888 INCHES NOMINAL
OVERALL LENGTH: 3.530 INCHES MINIMUM AND 3.660 INCHES MAXIMUM
OVERALL WIDTH: 1.460 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 5 TURRET
Related Searches:
652-642
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961010294490
NSN
5961-01-029-4490
652-642
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961010294490
NSN
5961-01-029-4490
MFG
MICRO USPD INC
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 150.00 MILLIAMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 10000.0 REVERSE VOLTAGE, INSTANTANEOUS
CIRCUIT CONNECTION STYLE DESIGNATOR: 8 BRIDGE 3 PHASE
MATERIAL: SILICON
MOUNTING METHOD: THREADED HOLE
OPERATING TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.888 INCHES NOMINAL
OVERALL LENGTH: 3.530 INCHES MINIMUM AND 3.660 INCHES MAXIMUM
OVERALL WIDTH: 1.460 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 5 TURRET
Related Searches:
67-6323
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961010294490
NSN
5961-01-029-4490
67-6323
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961010294490
NSN
5961-01-029-4490
MFG
INTERNATIONAL RECTIFIER CORPORATION
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 150.00 MILLIAMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 10000.0 REVERSE VOLTAGE, INSTANTANEOUS
CIRCUIT CONNECTION STYLE DESIGNATOR: 8 BRIDGE 3 PHASE
MATERIAL: SILICON
MOUNTING METHOD: THREADED HOLE
OPERATING TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.888 INCHES NOMINAL
OVERALL LENGTH: 3.530 INCHES MINIMUM AND 3.660 INCHES MAXIMUM
OVERALL WIDTH: 1.460 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 5 TURRET
Related Searches:
SA3339
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961010294490
NSN
5961-01-029-4490
SA3339
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961010294490
NSN
5961-01-029-4490
MFG
SEMTECH CORPORATION
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 150.00 MILLIAMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 10000.0 REVERSE VOLTAGE, INSTANTANEOUS
CIRCUIT CONNECTION STYLE DESIGNATOR: 8 BRIDGE 3 PHASE
MATERIAL: SILICON
MOUNTING METHOD: THREADED HOLE
OPERATING TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.888 INCHES NOMINAL
OVERALL LENGTH: 3.530 INCHES MINIMUM AND 3.660 INCHES MAXIMUM
OVERALL WIDTH: 1.460 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 5 TURRET
Related Searches:
801304-1
TRANSISTOR
NSN, MFG P/N
5961010294553
NSN
5961-01-029-4553
MFG
RAYTHEON COMPANY
Description
DESIGN CONTROL REFERENCE: 801304-1
INCLOSURE MATERIAL: CERAMIC
MANUFACTURERS CODE: 96214
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.125 INCHES
OVERALL HEIGHT: 0.062 INCHES MAXIMUM
OVERALL LENGTH: 0.062 INCHES MAXIMUM
OVERALL WIDTH: 0.234 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 4 FERRULE
THE MANUFACTURERS DATA:
THREAD SERIES DESIGNATOR: UNC
Related Searches:
HP38510E
TRANSISTOR
NSN, MFG P/N
5961010294553
NSN
5961-01-029-4553
MFG
HEWLETT PACKARD CO
Description
DESIGN CONTROL REFERENCE: 801304-1
INCLOSURE MATERIAL: CERAMIC
MANUFACTURERS CODE: 96214
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.125 INCHES
OVERALL HEIGHT: 0.062 INCHES MAXIMUM
OVERALL LENGTH: 0.062 INCHES MAXIMUM
OVERALL WIDTH: 0.234 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 4 FERRULE
THE MANUFACTURERS DATA:
THREAD SERIES DESIGNATOR: UNC
Related Searches:
1N5708B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010294557
NSN
5961-01-029-4557
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MAXIMUM REVERSE BREAKDOWN CURRENT, INSTANTANEOUS AND 0.02 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE6283 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
11-10615-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010294558
NSN
5961-01-029-4558
11-10615-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010294558
NSN
5961-01-029-4558
MFG
COMPAQ FEDERAL LLC
Description
CURRENT RATING PER CHARACTERISTIC: 400.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.332 INCHES MINIMUM AND 0.342 INCHES MAXIMUM
OVERALL LENGTH: 0.234 INCHES MINIMUM AND 0.246 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 4.0 WATTS MAXIMUM FORWARD POWER DISSIPATION, DC
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.990 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 140.0 MAXIMUM REVERSE VOLTAGE, TOTAL RMS AND 200.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 240.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE AND 200.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE AND 200.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
Related Searches:
203752
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010294558
NSN
5961-01-029-4558
MFG
ULTRA ELECTRONICS LIMITED
Description
CURRENT RATING PER CHARACTERISTIC: 400.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.332 INCHES MINIMUM AND 0.342 INCHES MAXIMUM
OVERALL LENGTH: 0.234 INCHES MINIMUM AND 0.246 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 4.0 WATTS MAXIMUM FORWARD POWER DISSIPATION, DC
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.990 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 140.0 MAXIMUM REVERSE VOLTAGE, TOTAL RMS AND 200.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 240.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE AND 200.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE AND 200.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
Related Searches:
403709
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010294558
NSN
5961-01-029-4558
MFG
AMERICAN TELEPHONE AND TELEGRAPH CO
Description
CURRENT RATING PER CHARACTERISTIC: 400.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.332 INCHES MINIMUM AND 0.342 INCHES MAXIMUM
OVERALL LENGTH: 0.234 INCHES MINIMUM AND 0.246 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 4.0 WATTS MAXIMUM FORWARD POWER DISSIPATION, DC
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.990 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 140.0 MAXIMUM REVERSE VOLTAGE, TOTAL RMS AND 200.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 240.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE AND 200.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE AND 200.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
Related Searches:
4045
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010294558
NSN
5961-01-029-4558
MFG
MARK INDUSTRIES
Description
CURRENT RATING PER CHARACTERISTIC: 400.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.332 INCHES MINIMUM AND 0.342 INCHES MAXIMUM
OVERALL LENGTH: 0.234 INCHES MINIMUM AND 0.246 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 4.0 WATTS MAXIMUM FORWARD POWER DISSIPATION, DC
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.990 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 140.0 MAXIMUM REVERSE VOLTAGE, TOTAL RMS AND 200.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 240.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE AND 200.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE AND 200.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
Related Searches:
MR752
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010294558
NSN
5961-01-029-4558
MFG
SEMICONDUCTOR COMPONENTS INDUSTRIES LLC DBA SEMI CONDUCTOR COMPONENTS INDUSTRIES DIV CORPORATE HEADQUARTERS
Description
CURRENT RATING PER CHARACTERISTIC: 400.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.332 INCHES MINIMUM AND 0.342 INCHES MAXIMUM
OVERALL LENGTH: 0.234 INCHES MINIMUM AND 0.246 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 4.0 WATTS MAXIMUM FORWARD POWER DISSIPATION, DC
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.990 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 140.0 MAXIMUM REVERSE VOLTAGE, TOTAL RMS AND 200.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 240.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE AND 200.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE AND 200.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
Related Searches:
125396A
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961010295047
NSN
5961-01-029-5047
125396A
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961010295047
NSN
5961-01-029-5047
MFG
ITT CORPORATION DBA ITT AREOSPACE CONTROLS
Description
DESIGN CONTROL REFERENCE: 125396B
MAJOR COMPONENTS: DIODE 8; BRACKET 1
MANUFACTURERS CODE: 73760
THE MANUFACTURERS DATA:
Related Searches:
156979-01
TRANSISTOR
NSN, MFG P/N
5961010295161
NSN
5961-01-029-5161
MFG
GE AVIATION SYSTEMS LLC
Description
DESIGN CONTROL REFERENCE: 156979-01
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 35351
OVERALL HEIGHT: 0.290 INCHES NOMINAL
OVERALL LENGTH: 1.560 INCHES NOMINAL
OVERALL WIDTH: 1.047 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
SLD40-1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010295195
NSN
5961-01-029-5195
SLD40-1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010295195
NSN
5961-01-029-5195
MFG
SOLITRON DEVICES INC.
Description
III END ITEM IDENTIFICATION: AN-FPS110 RADAR MOD
OVERALL HEIGHT: 0.750 INCHES NOMINAL
OVERALL LENGTH: 6.500 INCHES NOMINAL
OVERALL WIDTH: 0.750 INCHES NOMINAL
SPECIAL FEATURES: 40 KV PIV; 50 AMP PEAK SURGE CURRENT
Related Searches:
102246
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961010295261
NSN
5961-01-029-5261
MFG
TRANSISTOR DEVICES INC . DBA TDI POWER
Description
DESIGN CONTROL REFERENCE: B102246
MANUFACTURERS CODE: 09004
OVERALL HEIGHT: 0.250 INCHES NOMINAL
OVERALL LENGTH: 1.875 INCHES NOMINAL
OVERALL WIDTH: 1.250 INCHES NOMINAL
THE MANUFACTURERS DATA:
Related Searches:
304270-1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010295450
NSN
5961-01-029-5450
304270-1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010295450
NSN
5961-01-029-5450
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV MULTIPLE
Description
COMPONENT NAME AND QUANTITY: 8 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 350.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC ALL SEMICONDUCTOR DEVICE DIODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 600.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL SEMICONDUCTOR DEVICE DIODE
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
SPECIAL FEATURES: ALL SEMICONDUCTOR DEVICE DIODE JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL CIRCLE DIAMETER: 0.230 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 9 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 55.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE ALL SEMICONDUCTOR DEVICE DIODE_
