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5961-01-051-9406

20 Products

121265

TRANSISTOR

NSN, MFG P/N

5961010519406

NSN

5961-01-051-9406

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121265

TRANSISTOR

NSN, MFG P/N

5961010519406

NSN

5961-01-051-9406

MFG

LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MISSILES AND FIRE CONTROL - ARCHBALD

Description

CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: 121265
MANUFACTURERS CODE: 94271
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: MATERIAL WILL BE IN ACCORDANCE WITH NAVICP MECH; ACTIVITY HX QUALITY CONTROL, MANUFACTURING AND TESTING SPECIFICATIONS.
THE MANUFACTURERS DATA:

121154G3, PC. 83

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010519408

NSN

5961-01-051-9408

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121154G3, PC. 83

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010519408

NSN

5961-01-051-9408

MFG

LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MISSILES AND FIRE CONTROL - ARCHBALD

Description

CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: SS3153
MANUFACTURERS CODE: 14099
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: MATERIAL WILL BE IN ACCORDANCE WITH NAVICP MECH; ACTIVITY HX QUALITY CONTROL, MANUFACTURING AND TESTING SPECIFICATIONS.
THE MANUFACTURERS DATA:

SS3153

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010519408

NSN

5961-01-051-9408

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SS3153

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010519408

NSN

5961-01-051-9408

MFG

SEMTECH CORPORATION

Description

CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: SS3153
MANUFACTURERS CODE: 14099
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: MATERIAL WILL BE IN ACCORDANCE WITH NAVICP MECH; ACTIVITY HX QUALITY CONTROL, MANUFACTURING AND TESTING SPECIFICATIONS.
THE MANUFACTURERS DATA:

353-3164-010

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010519822

NSN

5961-01-051-9822

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353-3164-010

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010519822

NSN

5961-01-051-9822

MFG

ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS

Description

CURRENT RATING PER CHARACTERISTIC: 125.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.00 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 13499-353-3164 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3.9 MAXIMUM NOMINAL REGULATOR VOLTAGE

C4978

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010519822

NSN

5961-01-051-9822

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C4978

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010519822

NSN

5961-01-051-9822

MFG

C O D I CORP DBA CODI SEMICONDUCTOR INC

Description

CURRENT RATING PER CHARACTERISTIC: 125.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.00 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 13499-353-3164 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3.9 MAXIMUM NOMINAL REGULATOR VOLTAGE

DZ730515A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010519822

NSN

5961-01-051-9822

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DZ730515A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010519822

NSN

5961-01-051-9822

MFG

MICROSEMI CORP.-SCOTTSDALE DBA MICROSEMI

Description

CURRENT RATING PER CHARACTERISTIC: 125.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.00 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 13499-353-3164 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3.9 MAXIMUM NOMINAL REGULATOR VOLTAGE

SZG63

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010519822

NSN

5961-01-051-9822

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SZG63

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010519822

NSN

5961-01-051-9822

MFG

FREESCALE SEMICONDUCTOR INC.

Description

CURRENT RATING PER CHARACTERISTIC: 125.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.00 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 13499-353-3164 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3.9 MAXIMUM NOMINAL REGULATOR VOLTAGE

3182214

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961010519823

NSN

5961-01-051-9823

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3182214

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961010519823

NSN

5961-01-051-9823

MFG

RAYTHEON COMPANY

Description

COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE

3387390

TRANSISTOR

NSN, MFG P/N

5961010520666

NSN

5961-01-052-0666

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3387390

TRANSISTOR

NSN, MFG P/N

5961010520666

NSN

5961-01-052-0666

MFG

RAYTHEON COMPANY

Description

DESIGN CONTROL REFERENCE: 3387390
MANUFACTURERS CODE: 82577
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
THE MANUFACTURERS DATA:

A10555

TRANSISTOR

NSN, MFG P/N

5961010520666

NSN

5961-01-052-0666

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A10555

TRANSISTOR

NSN, MFG P/N

5961010520666

NSN

5961-01-052-0666

MFG

API ELECTRONICS INC.

Description

DESIGN CONTROL REFERENCE: 3387390
MANUFACTURERS CODE: 82577
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
THE MANUFACTURERS DATA:

16601915#

TRANSISTOR

NSN, MFG P/N

5961010520667

NSN

5961-01-052-0667

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16601915#

TRANSISTOR

NSN, MFG P/N

5961010520667

NSN

5961-01-052-0667

MFG

SYPRIS ELECTRONICS LLC

Description

OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL HEIGHT: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PN

5082-1736

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010520668

NSN

5961-01-052-0668

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5082-1736

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010520668

NSN

5961-01-052-0668

MFG

AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES

Description

MANUFACTURERS CODE: 96214
MFR SOURCE CONTROLLING REFERENCE: 534727-2
OVERALL DIAMETER: 0.123 INCHES MAXIMUM
OVERALL LENGTH: 1.445 INCHES MAXIMUM
SPEC/STD CONTROLLING DATA:

534727-2

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010520668

NSN

5961-01-052-0668

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534727-2

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010520668

NSN

5961-01-052-0668

MFG

RAYTHEON COMPANY

Description

MANUFACTURERS CODE: 96214
MFR SOURCE CONTROLLING REFERENCE: 534727-2
OVERALL DIAMETER: 0.123 INCHES MAXIMUM
OVERALL LENGTH: 1.445 INCHES MAXIMUM
SPEC/STD CONTROLLING DATA:

16601946-001

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961010520669

NSN

5961-01-052-0669

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16601946-001

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961010520669

NSN

5961-01-052-0669

MFG

SYPRIS ELECTRONICS LLC

Description

DESIGN CONTROL REFERENCE: 16601946-001
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 28009
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
OVERALL LENGTH: 2.310 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 1.062 INCHES MAXIMUM
SPECIAL FEATURES: ALTERED ITEM,MAKE FROM P/N 16601866-001
THE MANUFACTURERS DATA:

26066242

SEMICONDUCTOR DEVIC

NSN, MFG P/N

5961010520703

NSN

5961-01-052-0703

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26066242

SEMICONDUCTOR DEVIC

NSN, MFG P/N

5961010520703

NSN

5961-01-052-0703

MFG

ALCATEL - LUCENT FRANCE

5082-6629

SEMICONDUCTOR DEVIC

NSN, MFG P/N

5961010520703

NSN

5961-01-052-0703

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5082-6629

SEMICONDUCTOR DEVIC

NSN, MFG P/N

5961010520703

NSN

5961-01-052-0703

MFG

AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES

HP5082-6629

SEMICONDUCTOR DEVIC

NSN, MFG P/N

5961010520703

NSN

5961-01-052-0703

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HP5082-6629

SEMICONDUCTOR DEVIC

NSN, MFG P/N

5961010520703

NSN

5961-01-052-0703

MFG

HEWLETT PACKARD CO

1142AS456

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961010523491

NSN

5961-01-052-3491

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1142AS456

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961010523491

NSN

5961-01-052-3491

MFG

NAVAL AIR SYSTEMS COMMAND

Description

OVERALL HEIGHT: 5.000 INCHES NOMINAL
OVERALL LENGTH: 8.000 INCHES NOMINAL
OVERALL WIDTH: 1.625 INCHES NOMINAL

D7039-60

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961010523491

NSN

5961-01-052-3491

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D7039-60

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961010523491

NSN

5961-01-052-3491

MFG

HANNON COMPANY THE DBA CHARLES REWINDING DIV

Description

OVERALL HEIGHT: 5.000 INCHES NOMINAL
OVERALL LENGTH: 8.000 INCHES NOMINAL
OVERALL WIDTH: 1.625 INCHES NOMINAL

MRA333B

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961010523491

NSN

5961-01-052-3491

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MRA333B

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961010523491

NSN

5961-01-052-3491

MFG

FREESCALE SEMICONDUCTOR INC.

Description

OVERALL HEIGHT: 5.000 INCHES NOMINAL
OVERALL LENGTH: 8.000 INCHES NOMINAL
OVERALL WIDTH: 1.625 INCHES NOMINAL