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5961-01-053-1203

20 Products

SK3045

TRANSISTOR

NSN, MFG P/N

5961010531203

NSN

5961-01-053-1203

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SK3045

TRANSISTOR

NSN, MFG P/N

5961010531203

NSN

5961-01-053-1203

MFG

INTERSIL CORPORATION

Description

CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: T0-39
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES NOMINAL
OVERALL LENGTH: 0.328 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 300.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 300.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 6.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN

MZ500-19

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961010531378

NSN

5961-01-053-1378

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MZ500-19

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961010531378

NSN

5961-01-053-1378

MFG

FREESCALE SEMICONDUCTOR INC.

515385-1

TRANSISTOR

NSN, MFG P/N

5961010531661

NSN

5961-01-053-1661

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515385-1

TRANSISTOR

NSN, MFG P/N

5961010531661

NSN

5961-01-053-1661

MFG

ITT CORPORATION DBA ITT GILFILLAN

Description

CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.36 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 12.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 4.5 MAXIMUM EMITTER TO BASE VOLTAGE, DC

ST824

TRANSISTOR

NSN, MFG P/N

5961010531661

NSN

5961-01-053-1661

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ST824

TRANSISTOR

NSN, MFG P/N

5961010531661

NSN

5961-01-053-1661

MFG

FREESCALE SEMICONDUCTOR INC.

Description

CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.36 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 12.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 4.5 MAXIMUM EMITTER TO BASE VOLTAGE, DC

800043

TRANSISTOR

NSN, MFG P/N

5961010531662

NSN

5961-01-053-1662

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800043

TRANSISTOR

NSN, MFG P/N

5961010531662

NSN

5961-01-053-1662

MFG

RANTEC POWER SYSTEMS INC

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
INTERNAL CONFIGURATION: UNIJUNCTION
SEMICONDUCTOR MATERIAL: SILICON

108930

TRANSISTOR

NSN, MFG P/N

5961010531663

NSN

5961-01-053-1663

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108930

TRANSISTOR

NSN, MFG P/N

5961010531663

NSN

5961-01-053-1663

MFG

LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MISSILES AND FIRE CONTROL - ARCHBALD

Description

CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: 108930
MANUFACTURERS CODE: 94271
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: MATERIAL WILL BE IN ACCORDANCE WITH NAVICP MECH; ACTIVITY HX QUALITY CONTROL, MANUFACTURING AND TESTING SPECIFICATIONS.
THE MANUFACTURERS DATA:

1-021-0420

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010531665

NSN

5961-01-053-1665

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1-021-0420

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010531665

NSN

5961-01-053-1665

MFG

DOTRONIX INC BOULDER OPN

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON

1-021-0424

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010531666

NSN

5961-01-053-1666

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1-021-0424

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010531666

NSN

5961-01-053-1666

MFG

DOTRONIX INC BOULDER OPN

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON

040156 ITEM 4

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961010531668

NSN

5961-01-053-1668

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040156 ITEM 4

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961010531668

NSN

5961-01-053-1668

MFG

XES INC XEROX ENGINEERING SERVICE

Description

COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 3 TRANSISTOR

0N020270

TRANSISTOR

NSN, MFG P/N

5961010532580

NSN

5961-01-053-2580

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0N020270

TRANSISTOR

NSN, MFG P/N

5961010532580

NSN

5961-01-053-2580

MFG

NATIONAL SECURITY AGENCY

Description

DESIGN CONTROL REFERENCE: 0N020270
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 98230
OVERALL DIAMETER: 1.281 INCHES MAXIMUM
OVERALL HEIGHT: 0.546 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: MTG HARDWARE PROVIDED; JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 2 TAB, SOLDER LUG
TEST DATA DOCUMENT: 98230-0N020270 DRAWING
THE MANUFACTURERS DATA:

1N5809

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010532794

NSN

5961-01-053-2794

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1N5809

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010532794

NSN

5961-01-053-2794

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

CURRENT RATING PER CHARACTERISTIC: 125.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N5809
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/477
OVERALL DIAMETER: 0.115 INCHES MINIMUM AND 0.165 INCHES MAXIMUM
OVERALL LENGTH: 0.130 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/477 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE

28473-73011

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010532794

NSN

5961-01-053-2794

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28473-73011

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010532794

NSN

5961-01-053-2794

MFG

BAE SYSTEMS OPERATIONS LTD

Description

CURRENT RATING PER CHARACTERISTIC: 125.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N5809
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/477
OVERALL DIAMETER: 0.115 INCHES MINIMUM AND 0.165 INCHES MAXIMUM
OVERALL LENGTH: 0.130 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/477 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE

317124A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010532794

NSN

5961-01-053-2794

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317124A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010532794

NSN

5961-01-053-2794

MFG

QES LTD QUALITY ELECTRONIC SERVICES

Description

CURRENT RATING PER CHARACTERISTIC: 125.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N5809
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/477
OVERALL DIAMETER: 0.115 INCHES MINIMUM AND 0.165 INCHES MAXIMUM
OVERALL LENGTH: 0.130 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/477 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE

4178600-882

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010532794

NSN

5961-01-053-2794

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4178600-882

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010532794

NSN

5961-01-053-2794

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

CURRENT RATING PER CHARACTERISTIC: 125.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N5809
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/477
OVERALL DIAMETER: 0.115 INCHES MINIMUM AND 0.165 INCHES MAXIMUM
OVERALL LENGTH: 0.130 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/477 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE

P565039101

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010532794

NSN

5961-01-053-2794

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P565039101

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010532794

NSN

5961-01-053-2794

MFG

F E L CORP

Description

CURRENT RATING PER CHARACTERISTIC: 125.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N5809
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/477
OVERALL DIAMETER: 0.115 INCHES MINIMUM AND 0.165 INCHES MAXIMUM
OVERALL LENGTH: 0.130 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/477 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE

SE25870-045

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010532794

NSN

5961-01-053-2794

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SE25870-045

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010532794

NSN

5961-01-053-2794

MFG

THALES OPTRONICS LIMITED

Description

CURRENT RATING PER CHARACTERISTIC: 125.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N5809
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/477
OVERALL DIAMETER: 0.115 INCHES MINIMUM AND 0.165 INCHES MAXIMUM
OVERALL LENGTH: 0.130 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/477 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE

UES1302

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010532794

NSN

5961-01-053-2794

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UES1302

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010532794

NSN

5961-01-053-2794

MFG

VISHAY

Description

CURRENT RATING PER CHARACTERISTIC: 125.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N5809
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/477
OVERALL DIAMETER: 0.115 INCHES MINIMUM AND 0.165 INCHES MAXIMUM
OVERALL LENGTH: 0.130 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/477 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE

VA-70-0154-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010532794

NSN

5961-01-053-2794

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VA-70-0154-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010532794

NSN

5961-01-053-2794

MFG

SELEX GALILEO LTD

Description

CURRENT RATING PER CHARACTERISTIC: 125.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N5809
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/477
OVERALL DIAMETER: 0.115 INCHES MINIMUM AND 0.165 INCHES MAXIMUM
OVERALL LENGTH: 0.130 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/477 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE

2105420-1

RETAINER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961010532964

NSN

5961-01-053-2964

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2105420-1

RETAINER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961010532964

NSN

5961-01-053-2964

MFG

HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE-TUCSON

Description

DESIGN CONTROL REFERENCE: 2105420-1
MANUFACTURERS CODE: 64547
MATERIAL: ALUMINUM ALLOY 6061
MOUNTING FACILITY TYPE AND QUANTITY: 2 THREADED HOLE SINGLE MOUNTING FACILITY
SURFACE TREATMENT: OXIDE FILM
THE MANUFACTURERS DATA:

99196724

TRANSISTOR

NSN, MFG P/N

5961010533311

NSN

5961-01-053-3311

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99196724

TRANSISTOR

NSN, MFG P/N

5961010533311

NSN

5961-01-053-3311

MFG

THALES

Description

DESIGN CONTROL REFERENCE: BC307B
III END ITEM IDENTIFICATION: E3A ACFT,BOEING,MODEL 411,TYPE L
MANUFACTURERS CODE: 53763
THE MANUFACTURERS DATA: