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5961-01-063-6494

20 Products

A532A061-101

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961010636494

NSN

5961-01-063-6494

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A532A061-101

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961010636494

NSN

5961-01-063-6494

MFG

KEARFOTT CORPORATION DBA KEARFOTT DIV GUIDANCE AND NAVIGATION DIVISION

Description

COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
III END ITEM IDENTIFICATION: F-16
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.200 INCHES MAXIMUM
OVERALL LENGTH: 0.800 INCHES MAXIMUM
OVERALL WIDTH: 0.780 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 25.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL SEMICONDUCTOR
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 6 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 88818-A532A061 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 120.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR TO EMITTER, SUSTAINED ALL TRANSISTOR

226658-000

TRANSISTOR

NSN, MFG P/N

5961010637195

NSN

5961-01-063-7195

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226658-000

TRANSISTOR

NSN, MFG P/N

5961010637195

NSN

5961-01-063-7195

MFG

BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I

Description

CURRENT RATING PER CHARACTERISTIC: 0.10 MICROAMPERES MAXIMUM EMITTER CUTOFF CURRENT, DC, COLLECTOR OPEN
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-66
MANUFACTURERS CODE: 81413
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MFR SOURCE CONTROLLING REFERENCE: 226658-000
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.620 INCHES MAXIMUM
OVERALL HEIGHT: 0.500 INCHES MINIMUM AND 0.680 INCHES MAXIMUM
OVERALL LENGTH: 0.297 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 25.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.100 INCHES MINIMUM AND 0.150 INCHES MAXIMUM
TERMINAL LENGTH: 0.360 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG AND 1 THREADED STUD
VOLTAGE

2N3741A

TRANSISTOR

NSN, MFG P/N

5961010637195

NSN

5961-01-063-7195

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2N3741A

TRANSISTOR

NSN, MFG P/N

5961010637195

NSN

5961-01-063-7195

MFG

FREESCALE SEMICONDUCTOR INC.

Description

CURRENT RATING PER CHARACTERISTIC: 0.10 MICROAMPERES MAXIMUM EMITTER CUTOFF CURRENT, DC, COLLECTOR OPEN
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-66
MANUFACTURERS CODE: 81413
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MFR SOURCE CONTROLLING REFERENCE: 226658-000
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.620 INCHES MAXIMUM
OVERALL HEIGHT: 0.500 INCHES MINIMUM AND 0.680 INCHES MAXIMUM
OVERALL LENGTH: 0.297 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 25.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.100 INCHES MINIMUM AND 0.150 INCHES MAXIMUM
TERMINAL LENGTH: 0.360 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG AND 1 THREADED STUD
VOLTAGE

151-0472-00

TRANSISTOR

NSN, MFG P/N

5961010637196

NSN

5961-01-063-7196

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151-0472-00

TRANSISTOR

NSN, MFG P/N

5961010637196

NSN

5961-01-063-7196

MFG

TEKTRONIX INC. DBA TEKTRONIX

FMT5093

TRANSISTOR

NSN, MFG P/N

5961010637196

NSN

5961-01-063-7196

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FMT5093

TRANSISTOR

NSN, MFG P/N

5961010637196

NSN

5961-01-063-7196

MFG

FAIRCHILD SEMICONDUCTOR CORP

17269

TRANSISTOR

NSN, MFG P/N

5961010637197

NSN

5961-01-063-7197

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17269

TRANSISTOR

NSN, MFG P/N

5961010637197

NSN

5961-01-063-7197

MFG

L-3 SERVICES INC. DBA LINKABIT DIV LINKABIT

Description

(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 50.00 AMPERES MAXIMUM GATE CURRENT
DESIGN CONTROL REFERENCE: 17269
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
INTERNAL CONFIGURATION: FIELD EFFECT-DUAL GATE
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-71
MANUFACTURERS CODE: 11627
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.219 INCHES NOMINAL
OVERALL LENGTH: 0.188 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 325.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 8 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM DRAIN TO GATE VOLTAGE

4503841

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010637904

NSN

5961-01-063-7904

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4503841

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010637904

NSN

5961-01-063-7904

MFG

SAGEM DEFENSE SECURITE - GROUPE SAFR AN

MA4047E

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010637904

NSN

5961-01-063-7904

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MA4047E

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010637904

NSN

5961-01-063-7904

MFG

M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM

151-0474-00

TRANSISTOR

NSN, MFG P/N

5961010638075

NSN

5961-01-063-8075

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151-0474-00

TRANSISTOR

NSN, MFG P/N

5961010638075

NSN

5961-01-063-8075

MFG

TEKTRONIX INC. DBA TEKTRONIX

Description

CURRENT RATING PER CHARACTERISTIC: 250.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.164 INCHES
OVERALL DIAMETER: 0.278 INCHES MINIMUM AND 0.286 INCHES MAXIMUM
OVERALL LENGTH: 0.178 INCHES MINIMUM AND 0.198 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 4 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNC
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 35.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 3.5 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN AND 25.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN

845024

TRANSISTOR

NSN, MFG P/N

5961010638075

NSN

5961-01-063-8075

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845024

TRANSISTOR

NSN, MFG P/N

5961010638075

NSN

5961-01-063-8075

MFG

FLUKE CORPORATION

Description

CURRENT RATING PER CHARACTERISTIC: 250.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.164 INCHES
OVERALL DIAMETER: 0.278 INCHES MINIMUM AND 0.286 INCHES MAXIMUM
OVERALL LENGTH: 0.178 INCHES MINIMUM AND 0.198 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 4 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNC
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 35.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 3.5 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN AND 25.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN

MRF511

TRANSISTOR

NSN, MFG P/N

5961010638075

NSN

5961-01-063-8075

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MRF511

TRANSISTOR

NSN, MFG P/N

5961010638075

NSN

5961-01-063-8075

MFG

FREESCALE SEMICONDUCTOR INC.

Description

CURRENT RATING PER CHARACTERISTIC: 250.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.164 INCHES
OVERALL DIAMETER: 0.278 INCHES MINIMUM AND 0.286 INCHES MAXIMUM
OVERALL LENGTH: 0.178 INCHES MINIMUM AND 0.198 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 4 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNC
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 35.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 3.5 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN AND 25.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN

MRF587

TRANSISTOR

NSN, MFG P/N

5961010638075

NSN

5961-01-063-8075

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MRF587

TRANSISTOR

NSN, MFG P/N

5961010638075

NSN

5961-01-063-8075

MFG

M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM

Description

CURRENT RATING PER CHARACTERISTIC: 250.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.164 INCHES
OVERALL DIAMETER: 0.278 INCHES MINIMUM AND 0.286 INCHES MAXIMUM
OVERALL LENGTH: 0.178 INCHES MINIMUM AND 0.198 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 4 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNC
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 35.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 3.5 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN AND 25.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN

GI816

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010638076

NSN

5961-01-063-8076

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GI816

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010638076

NSN

5961-01-063-8076

MFG

GENERAL INSTRUMENT CORP OPTOELECTRONICS DIV

Description

CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.104 INCHES MINIMUM AND 0.140 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE

MR816

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010638076

NSN

5961-01-063-8076

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MR816

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010638076

NSN

5961-01-063-8076

MFG

FREESCALE SEMICONDUCTOR INC.

Description

CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.104 INCHES MINIMUM AND 0.140 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE

446017-0036

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010638077

NSN

5961-01-063-8077

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446017-0036

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010638077

NSN

5961-01-063-8077

MFG

THALES ATM INC.

Description

(NON-CORE DATA) FRAGILITY FACTOR: RUGGED
CURRENT RATING PER CHARACTERISTIC: 40.00 MILLIAMPERES NOMINAL ON-STATE CURRENT, DC
FUNCTION FOR WHICH DESIGNED: TRANSIENT SUPPRESSOR
III END ITEM IDENTIFICATION: 2GVORTAC, FA-9996
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.625 INCHES NOMINAL
OVERALL LENGTH: 0.200 INCHES MINIMUM AND 0.250 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: FUNCTION, ABSORBER, OVV; REFERENCE DATA, 1A2A2VR2(TYPICAL), TI-6820.2, FA-9996, VORTAC, VOR/DME, VOR EQUIPMENT, VOL 8, SEC 8, PG 8-38
TERMINAL CIRCLE DIAMETER: 0.051 INCHES NOMINAL
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 31.4 MINIMUM BREAKDOWN VOLTAGE, DC AND 34.7 MAXIMUM BREAKDOWN VOLTAGE, DC

5KP28A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010638077

NSN

5961-01-063-8077

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5KP28A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010638077

NSN

5961-01-063-8077

MFG

GENERAL SEMICONDUCTOR INC

Description

(NON-CORE DATA) FRAGILITY FACTOR: RUGGED
CURRENT RATING PER CHARACTERISTIC: 40.00 MILLIAMPERES NOMINAL ON-STATE CURRENT, DC
FUNCTION FOR WHICH DESIGNED: TRANSIENT SUPPRESSOR
III END ITEM IDENTIFICATION: 2GVORTAC, FA-9996
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.625 INCHES NOMINAL
OVERALL LENGTH: 0.200 INCHES MINIMUM AND 0.250 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: FUNCTION, ABSORBER, OVV; REFERENCE DATA, 1A2A2VR2(TYPICAL), TI-6820.2, FA-9996, VORTAC, VOR/DME, VOR EQUIPMENT, VOL 8, SEC 8, PG 8-38
TERMINAL CIRCLE DIAMETER: 0.051 INCHES NOMINAL
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 31.4 MINIMUM BREAKDOWN VOLTAGE, DC AND 34.7 MAXIMUM BREAKDOWN VOLTAGE, DC

TZV33A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010638077

NSN

5961-01-063-8077

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TZV33A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010638077

NSN

5961-01-063-8077

MFG

SEMICON COMPONENTS INC

Description

(NON-CORE DATA) FRAGILITY FACTOR: RUGGED
CURRENT RATING PER CHARACTERISTIC: 40.00 MILLIAMPERES NOMINAL ON-STATE CURRENT, DC
FUNCTION FOR WHICH DESIGNED: TRANSIENT SUPPRESSOR
III END ITEM IDENTIFICATION: 2GVORTAC, FA-9996
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.625 INCHES NOMINAL
OVERALL LENGTH: 0.200 INCHES MINIMUM AND 0.250 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: FUNCTION, ABSORBER, OVV; REFERENCE DATA, 1A2A2VR2(TYPICAL), TI-6820.2, FA-9996, VORTAC, VOR/DME, VOR EQUIPMENT, VOL 8, SEC 8, PG 8-38
TERMINAL CIRCLE DIAMETER: 0.051 INCHES NOMINAL
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 31.4 MINIMUM BREAKDOWN VOLTAGE, DC AND 34.7 MAXIMUM BREAKDOWN VOLTAGE, DC

0N225059

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010638078

NSN

5961-01-063-8078

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0N225059

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010638078

NSN

5961-01-063-8078

MFG

NATIONAL SECURITY AGENCY

Description

CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
DESIGN CONTROL REFERENCE: 0N225059
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 98230
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES NOMINAL
OVERALL LENGTH: 0.250 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 98230-0N225059 DRAWING
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS

851-31604-10

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961010638187

NSN

5961-01-063-8187

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851-31604-10

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961010638187

NSN

5961-01-063-8187

MFG

HORLICK COMPANY INC.

Description

CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
DESIGN CONTROL REFERENCE: 85131604-10
MANUFACTURERS CODE: 32770
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 2.000 INCHES NOMINAL
OVERALL LENGTH: 2.250 INCHES NOMINAL
OVERALL WIDTH: 1.750 INCHES NOMINAL
SPECIAL FEATURES: GROUNDED TERMINAL NOT INCLUDED; ANY ACCEPTABLE LOAD TYPE; EPOXY CASE; PROTECTED FROM CORROSION AND MOISTURE; TWO 0.187 IN. DIA. MTG HOLES,1.750 INCENTER TO CENTER; ONE EACH SURGE SUPPRESSOR MTD ON RECTIFIER
TERMINAL TYPE AND QUANTITY: 4 THREADED STUD
THE MANUFACTURERS DATA:

85131604-10

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961010638187

NSN

5961-01-063-8187

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85131604-10

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961010638187

NSN

5961-01-063-8187

MFG

KATO ENGINEERING INC.

Description

CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
DESIGN CONTROL REFERENCE: 85131604-10
MANUFACTURERS CODE: 32770
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 2.000 INCHES NOMINAL
OVERALL LENGTH: 2.250 INCHES NOMINAL
OVERALL WIDTH: 1.750 INCHES NOMINAL
SPECIAL FEATURES: GROUNDED TERMINAL NOT INCLUDED; ANY ACCEPTABLE LOAD TYPE; EPOXY CASE; PROTECTED FROM CORROSION AND MOISTURE; TWO 0.187 IN. DIA. MTG HOLES,1.750 INCENTER TO CENTER; ONE EACH SURGE SUPPRESSOR MTD ON RECTIFIER
TERMINAL TYPE AND QUANTITY: 4 THREADED STUD
THE MANUFACTURERS DATA: