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5961-01-066-5561
20 Products
353-9016-780
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010665561
NSN
5961-01-066-5561
353-9016-780
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010665561
NSN
5961-01-066-5561
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 200.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N5652A
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: TRANSIENT SUPPRESSOR
III END ITEM IDENTIFICATION: AIRCRAFT, AIRLIFTER C-17A; TICONDEROGA CLASS CG (47); SPRUANCE CLASS DD (963); NIMITZ CLASS CVN; TARAWA CLASS LHA; BLUE RIDGE CLASS LCC-19; HELICOPTER OBSERVATION, OH-58D; AIRCRAFT, STARATOFORTRESS B-52; AIRCRAFT, STRATOLIFTER C-135; AIRCRAFT, F-111
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: D0-13
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/500
OVERALL DIAMETER: 0.215 INCHES MINIMUM AND 0.235 INCHES MAXIMUM
OVERALL LE
Related Searches:
10676185
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010663625
NSN
5961-01-066-3625
MFG
U S ARMY AVIATION AND MISSILE COMMAND
Description
CURRENT RATING PER CHARACTERISTIC: 11.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.215 INCHES MINIMUM AND 0.265 INCHES MAXIMUM
OVERALL LENGTH: 0.350 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 18876-10676185 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 82.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
1N3042B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010663625
NSN
5961-01-066-3625
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 11.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.215 INCHES MINIMUM AND 0.265 INCHES MAXIMUM
OVERALL LENGTH: 0.350 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 18876-10676185 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 82.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
SBR20
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010663686
NSN
5961-01-066-3686
SBR20
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010663686
NSN
5961-01-066-3686
MFG
SEMTECH CORPORATION
Description
III END ITEM IDENTIFICATION: WSR-74C RADAR,LWR
SPECIAL FEATURES: SILICON;SINGLE PHASE FULL WAVE BRIDGE;2000V PEAK INVERSE VOLTAGE;1.5 AMP AVERAGE RECTIFIER CURRENT AT PEAK INVERSE VOLTAGE IS 2 UA AT 25 DEG C AND 40 UA AT 100 DEG C;RECURRENT SURGE AT 25 DEG C IS 10 AMP;REGULAR REVERSE RECOVERY TIME;M55.0 TO P150.0 DEG C
~1: OPERATING TEMP;4 SOLID SILVER LEAD;DIM. OF LEADS 0.031 IN. DIA;0.875 IN. MIN LG;MOLDED CASE IS 0.620 IN. LG;0.420 IN. W;0.180 IN. H 55.0 TO 150.0 DEG C
Related Searches:
SBR25F
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010663686
NSN
5961-01-066-3686
SBR25F
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010663686
NSN
5961-01-066-3686
MFG
SEMTECH CORPUS CHRISTI.A. DE C.V. REYNOSA FACILITY
Description
III END ITEM IDENTIFICATION: WSR-74C RADAR,LWR
SPECIAL FEATURES: SILICON;SINGLE PHASE FULL WAVE BRIDGE;2000V PEAK INVERSE VOLTAGE;1.5 AMP AVERAGE RECTIFIER CURRENT AT PEAK INVERSE VOLTAGE IS 2 UA AT 25 DEG C AND 40 UA AT 100 DEG C;RECURRENT SURGE AT 25 DEG C IS 10 AMP;REGULAR REVERSE RECOVERY TIME;M55.0 TO P150.0 DEG C
~1: OPERATING TEMP;4 SOLID SILVER LEAD;DIM. OF LEADS 0.031 IN. DIA;0.875 IN. MIN LG;MOLDED CASE IS 0.620 IN. LG;0.420 IN. W;0.180 IN. H 55.0 TO 150.0 DEG C
Related Searches:
BR66
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961010663723
NSN
5961-01-066-3723
MFG
DIODES INC POWER COMPONENTS DIV
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
DESIGN CONTROL REFERENCE: BR66
MANUFACTURERS CODE: 18041
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 2.500 INCHES NOMINAL
OVERALL LENGTH: 0.600 INCHES NOMINAL
OVERALL WIDTH: 0.600 INCHES NOMINAL
SPECIAL FEATURES: GROUNDED TERMINAL NOT INCLUDED; ENCASED; 420 VOLTS RMS AND 6 AMPS DC; MOUNTING HOLE FOR NO. 6 SCREW
TERMINAL TYPE AND QUANTITY: 4 WIRE LEAD
THE MANUFACTURERS DATA:
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1203831
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010663836
NSN
5961-01-066-3836
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN MS2
Description
CURRENT RATING PER CHARACTERISTIC: 17.70 AMPERES MAXIMUM PEAK REVERSE SURGE CURRENT AND 200.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.215 INCHES MINIMUM AND 0.235 INCHES MAXIMUM
OVERALL LENGTH: 0.293 INCHES MINIMUM AND 0.357 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 53711-5165631 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 53.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS AND 37.5 MAXIMUM REVERSE VOLTAGE, TOTAL RMS
Related Searches:
5165631
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010663836
NSN
5961-01-066-3836
MFG
NAVAL SEA SYSTEMS COMMAND
Description
CURRENT RATING PER CHARACTERISTIC: 17.70 AMPERES MAXIMUM PEAK REVERSE SURGE CURRENT AND 200.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.215 INCHES MINIMUM AND 0.235 INCHES MAXIMUM
OVERALL LENGTH: 0.293 INCHES MINIMUM AND 0.357 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 53711-5165631 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 53.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS AND 37.5 MAXIMUM REVERSE VOLTAGE, TOTAL RMS
Related Searches:
GZ60423-A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010663836
NSN
5961-01-066-3836
MFG
GENERAL SEMICONDUCTOR INDUSTRIES INC
Description
CURRENT RATING PER CHARACTERISTIC: 17.70 AMPERES MAXIMUM PEAK REVERSE SURGE CURRENT AND 200.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.215 INCHES MINIMUM AND 0.235 INCHES MAXIMUM
OVERALL LENGTH: 0.293 INCHES MINIMUM AND 0.357 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 53711-5165631 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 53.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS AND 37.5 MAXIMUM REVERSE VOLTAGE, TOTAL RMS
Related Searches:
GZ60423A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010663836
NSN
5961-01-066-3836
MFG
PROTEK DEVICES LP DBA PROTEK DEVICES
Description
CURRENT RATING PER CHARACTERISTIC: 17.70 AMPERES MAXIMUM PEAK REVERSE SURGE CURRENT AND 200.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.215 INCHES MINIMUM AND 0.235 INCHES MAXIMUM
OVERALL LENGTH: 0.293 INCHES MINIMUM AND 0.357 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 53711-5165631 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 53.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS AND 37.5 MAXIMUM REVERSE VOLTAGE, TOTAL RMS
Related Searches:
EHS6B1
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961010664513
NSN
5961-01-066-4513
EHS6B1
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961010664513
NSN
5961-01-066-4513
MFG
MICROSEMI CORP-COLORADO
Description
DESIGN CONTROL REFERENCE: EHS6B1
MANUFACTURERS CODE: 59377
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.875 INCHES NOMINAL
OVERALL LENGTH: 2.250 INCHES NOMINAL
OVERALL WIDTH: 1.750 INCHES NOMINAL
SPECIAL FEATURES: GROUNDED TERMINAL NOT INCLUDED; ENCASED; 600 VOLTS RMS; ANY ACCEPTABLE LOAD; MOUNTING HOLES 0.172 IN. DIA.
TERMINAL TYPE AND QUANTITY: 4 THREADED STUD
THE MANUFACTURERS DATA:
Related Searches:
UZ5756
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010664668
NSN
5961-01-066-4668
MFG
MICRO USPD INC
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: GLASS OR CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TURN-OFF POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.975 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 56.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
E113
TRANSISTOR
NSN, MFG P/N
5961010664958
NSN
5961-01-066-4958
MFG
NATIONAL SEMICONDUCTOR CORP
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: R187
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.192 INCHES MINIMUM AND 0.222 INCHES MAXIMUM
OVERALL HEIGHT: 0.120 INCHES MINIMUM AND 0.240 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.095 INCHES MINIMUM AND 0.105 INCHES MAXIMUM
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
Related Searches:
505-273
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010664959
NSN
5961-01-066-4959
MFG
PLATH GMBH
Description
FUNCTION FOR WHICH DESIGNED: RECTIFIER
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: TERMINAL AND THREADED STUD
OVERALL DIAMETER: 0.477 INCHES MINIMUM AND 0.500 INCHES MAXIMUM
OVERALL LENGTH: 0.405 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 WIRE HOOK
THREAD SERIES DESIGNATOR: UNF
Related Searches:
MR2504S
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010664959
NSN
5961-01-066-4959
MFG
FREESCALE SEMICONDUCTOR INC.
Description
FUNCTION FOR WHICH DESIGNED: RECTIFIER
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: TERMINAL AND THREADED STUD
OVERALL DIAMETER: 0.477 INCHES MINIMUM AND 0.500 INCHES MAXIMUM
OVERALL LENGTH: 0.405 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 WIRE HOOK
THREAD SERIES DESIGNATOR: UNF
Related Searches:
482756-3
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010664960
NSN
5961-01-066-4960
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.112 INCHES
OVERALL LENGTH: 0.215 INCHES MINIMUM AND 0.240 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.187 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 14.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNC
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
UM9268
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010664960
NSN
5961-01-066-4960
MFG
MICRO USPD INC
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.112 INCHES
OVERALL LENGTH: 0.215 INCHES MINIMUM AND 0.240 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.187 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 14.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNC
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
MA41757
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010664961
NSN
5961-01-066-4961
MFG
M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM
Description
DESIGN CONTROL REFERENCE: MA41757
MANUFACTURERS CODE: 96341
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.068 INCHES MINIMUM AND 0.075 INCHES MAXIMUM
OVERALL LENGTH: 0.145 INCHES MINIMUM AND 0.165 INCHES MAXIMUM
TERMINAL CIRCLE DIAMETER: 0.014 INCHES MINIMUM AND 0.016 INCHES MAXIMUM
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
10047-1038
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961010665073
NSN
5961-01-066-5073
10047-1038
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961010665073
NSN
5961-01-066-5073
MFG
COOPER CROUSE-HINDS LLC DBA AIRPORT LIGHTING DIVISION
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
III END ITEM IDENTIFICATION: MEDIUM INTENSITY APPROACH LIGHTING SYSTEM,FA8767 (MALS)
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.750 INCHES NOMINAL
OVERALL LENGTH: 1.850 INCHES NOMINAL
OVERALL WIDTH: 1.850 INCHES NOMINAL
SPECIAL FEATURES: GROUNDED TERMINAL NOT INCLUDED; EPOXY CASE; 1/4 VOLTS RMS AND 20 AMPEREDC; MOUNTING HOLE 0.187 IN. DIA;3A2A2BR1, TI 6850.38 MALSR, FA 9629 MALS, PG 8-30
TERMINAL TYPE AND QUANTITY: 4 QUICK DISCONNECT, MALE
Related Searches:
H439
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961010665073
NSN
5961-01-066-5073
MFG
L-3 COMMUNICATIONS CORPORATION DBA L 3 COMMUNICATIONS CORPORATION EOS DIVISION
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
III END ITEM IDENTIFICATION: MEDIUM INTENSITY APPROACH LIGHTING SYSTEM,FA8767 (MALS)
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.750 INCHES NOMINAL
OVERALL LENGTH: 1.850 INCHES NOMINAL
OVERALL WIDTH: 1.850 INCHES NOMINAL
SPECIAL FEATURES: GROUNDED TERMINAL NOT INCLUDED; EPOXY CASE; 1/4 VOLTS RMS AND 20 AMPEREDC; MOUNTING HOLE 0.187 IN. DIA;3A2A2BR1, TI 6850.38 MALSR, FA 9629 MALS, PG 8-30
TERMINAL TYPE AND QUANTITY: 4 QUICK DISCONNECT, MALE
