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5961-01-082-1004

20 Products

802949-1

TRANSISTOR

NSN, MFG P/N

5961010821004

NSN

5961-01-082-1004

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802949-1

TRANSISTOR

NSN, MFG P/N

5961010821004

NSN

5961-01-082-1004

MFG

RAYTHEON COMPANY

Description

CURRENT RATING PER CHARACTERISTIC: 6.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 3.00 AMPERES MAXIMUM BASE CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.110 INCHES MINIMUM AND 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.360 INCHES MINIMUM AND 0.420 INCHES MAXIMUM
OVERALL WIDTH: 0.380 INCHES MINIMUM AND 0.420 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 2.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC

DZ780131R

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010820062

NSN

5961-01-082-0062

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DZ780131R

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010820062

NSN

5961-01-082-0062

MFG

MICROSEMI CORP.-SCOTTSDALE DBA MICROSEMI

Description

CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: SUPPORT EQUIPMENT, F-15 AIRCRAFT; STRATEGIC WEAPON SYSTEMS (POSEIDON AND TRIDENT)
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: D0-35
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.4 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 4.22 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -2.0 TO 2.0

DZ870131R

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010820062

NSN

5961-01-082-0062

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DZ870131R

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010820062

NSN

5961-01-082-0062

MFG

SIEMENS CORP

Description

CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: SUPPORT EQUIPMENT, F-15 AIRCRAFT; STRATEGIC WEAPON SYSTEMS (POSEIDON AND TRIDENT)
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: D0-35
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.4 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 4.22 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -2.0 TO 2.0

SZ10939-75

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010820062

NSN

5961-01-082-0062

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SZ10939-75

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010820062

NSN

5961-01-082-0062

MFG

FREESCALE SEMICONDUCTOR INC.

Description

CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: SUPPORT EQUIPMENT, F-15 AIRCRAFT; STRATEGIC WEAPON SYSTEMS (POSEIDON AND TRIDENT)
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: D0-35
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.4 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 4.22 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -2.0 TO 2.0

3E2

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010820275

NSN

5961-01-082-0275

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3E2

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010820275

NSN

5961-01-082-0275

MFG

ATLANTIC SERVICE CO INC

Description

MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.270 INCHES NOMINAL
OVERALL LENGTH: 0.375 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.050 INCHES NOMINAL
TERMINAL LENGTH: 0.750 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD

MA4C5

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010820275

NSN

5961-01-082-0275

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MA4C5

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010820275

NSN

5961-01-082-0275

MFG

EDAL INDUSTRIES INC.

Description

MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.270 INCHES NOMINAL
OVERALL LENGTH: 0.375 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.050 INCHES NOMINAL
TERMINAL LENGTH: 0.750 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD

JANTX1N5290

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010820276

NSN

5961-01-082-0276

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JANTX1N5290

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010820276

NSN

5961-01-082-0276

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

CURRENT RATING PER CHARACTERISTIC: 0.52 MILLIAMPERES MAXIMUM PEAK POINT CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N5290-1
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/463
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/463 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM NOMINAL REGULATOR VOLTAGE AND 25.0 MAXIMUM ON-STATE VOLTAGE, DC

112949

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961010820548

NSN

5961-01-082-0548

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112949

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961010820548

NSN

5961-01-082-0548

MFG

COMMUNICATIONS & POWER INDUSTRIES INC DBA TRAVELING WAVE TECHNOLOGY DIVISION DIV MICROWAVE POWER TUBE PRODUCTS

Description

ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 35.00 AMPERES FORWARD CURRENT, DC
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
MANUFACTURERS CODE: 99313
MATERIAL: SILICON
MFR SOURCE CONTROLLING REFERENCE: 112949
OVERALL HEIGHT: 0.750 INCHES NOMINAL
OVERALL LENGTH: 1.850 INCHES NOMINAL
OVERALL WIDTH: 1.850 INCHES NOMINAL
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 4 QUICK DISCONNECT, MALE

H1427

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961010820548

NSN

5961-01-082-0548

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H1427

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961010820548

NSN

5961-01-082-0548

MFG

MICRO QUALITY SEMICONDUCTOR INC SUB OF MICROSEMI CORP

Description

ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 35.00 AMPERES FORWARD CURRENT, DC
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
MANUFACTURERS CODE: 99313
MATERIAL: SILICON
MFR SOURCE CONTROLLING REFERENCE: 112949
OVERALL HEIGHT: 0.750 INCHES NOMINAL
OVERALL LENGTH: 1.850 INCHES NOMINAL
OVERALL WIDTH: 1.850 INCHES NOMINAL
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 4 QUICK DISCONNECT, MALE

11019389-1

TRANSISTOR

NSN, MFG P/N

5961010820563

NSN

5961-01-082-0563

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11019389-1

TRANSISTOR

NSN, MFG P/N

5961010820563

NSN

5961-01-082-0563

MFG

NORTHROP GRUMMAN GUIDANCE AND ELECTRONICS COMPANY INC. DIV LASER SYSTEMS

Description

CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM BASE CURRENT, DC AND 10.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.875 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES MINIMUM AND 0.450 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 125.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 80131-RELEASE6661 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 CASE AND 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 400.0 MAXIMUM BREAKDOWN VOL

2N6583

TRANSISTOR

NSN, MFG P/N

5961010820563

NSN

5961-01-082-0563

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2N6583

TRANSISTOR

NSN, MFG P/N

5961010820563

NSN

5961-01-082-0563

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM BASE CURRENT, DC AND 10.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.875 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES MINIMUM AND 0.450 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 125.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 80131-RELEASE6661 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 CASE AND 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 400.0 MAXIMUM BREAKDOWN VOL

3956008-1

TRANSISTOR

NSN, MFG P/N

5961010820563

NSN

5961-01-082-0563

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3956008-1

TRANSISTOR

NSN, MFG P/N

5961010820563

NSN

5961-01-082-0563

MFG

SCI SYSTEMS INC

Description

CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM BASE CURRENT, DC AND 10.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.875 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES MINIMUM AND 0.450 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 125.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 80131-RELEASE6661 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 CASE AND 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 400.0 MAXIMUM BREAKDOWN VOL

ED8030

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010820811

NSN

5961-01-082-0811

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ED8030

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010820811

NSN

5961-01-082-0811

MFG

ELECTRONIC DEVICES INC DBA E D I

ED8031

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961010820812

NSN

5961-01-082-0812

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ED8031

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961010820812

NSN

5961-01-082-0812

MFG

ELECTRONIC DEVICES INC DBA E D I

Description

ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 REVERSE VOLTAGE, INSTANTANEOUS
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: DIGITAL GROUP MULTIPLEXER, AN/TRC-138, -173, -174, -175
MATERIAL: SILICON
MOUNTING METHOD: THREADED HOLE
OPERATING TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 1.125 INCHES MAXIMUM
OVERALL LENGTH: 1.500 INCHES MAXIMUM
OVERALL WIDTH: 1.500 INCHES MAXIMUM
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
TERMINAL TYPE AND QUANTITY: 4 TURRET

FSS0DSPF-2G

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961010820812

NSN

5961-01-082-0812

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FSS0DSPF-2G

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961010820812

NSN

5961-01-082-0812

MFG

SOLITRON DEVICES INC.

Description

ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 REVERSE VOLTAGE, INSTANTANEOUS
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: DIGITAL GROUP MULTIPLEXER, AN/TRC-138, -173, -174, -175
MATERIAL: SILICON
MOUNTING METHOD: THREADED HOLE
OPERATING TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 1.125 INCHES MAXIMUM
OVERALL LENGTH: 1.500 INCHES MAXIMUM
OVERALL WIDTH: 1.500 INCHES MAXIMUM
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
TERMINAL TYPE AND QUANTITY: 4 TURRET

SCA126

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961010820812

NSN

5961-01-082-0812

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SCA126

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961010820812

NSN

5961-01-082-0812

MFG

MICROSEMI CORP RPM MICRO DIV

Description

ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 REVERSE VOLTAGE, INSTANTANEOUS
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: DIGITAL GROUP MULTIPLEXER, AN/TRC-138, -173, -174, -175
MATERIAL: SILICON
MOUNTING METHOD: THREADED HOLE
OPERATING TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 1.125 INCHES MAXIMUM
OVERALL LENGTH: 1.500 INCHES MAXIMUM
OVERALL WIDTH: 1.500 INCHES MAXIMUM
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
TERMINAL TYPE AND QUANTITY: 4 TURRET

SM-A-698359

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961010820812

NSN

5961-01-082-0812

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SM-A-698359

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961010820812

NSN

5961-01-082-0812

MFG

SEMITRONICS CORP

Description

ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 REVERSE VOLTAGE, INSTANTANEOUS
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: DIGITAL GROUP MULTIPLEXER, AN/TRC-138, -173, -174, -175
MATERIAL: SILICON
MOUNTING METHOD: THREADED HOLE
OPERATING TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 1.125 INCHES MAXIMUM
OVERALL LENGTH: 1.500 INCHES MAXIMUM
OVERALL WIDTH: 1.500 INCHES MAXIMUM
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
TERMINAL TYPE AND QUANTITY: 4 TURRET

GZ61110B

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010820813

NSN

5961-01-082-0813

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GZ61110B

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010820813

NSN

5961-01-082-0813

MFG

PROTEK DEVICES LP DBA PROTEK DEVICES

Description

CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM PEAK PULSE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-13
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.220 INCHES NOMINAL
OVERALL LENGTH: 0.350 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.250 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12.0 MAXIMUM REVERSE VOLTAGE, DC

299239-1

TRANSISTOR

NSN, MFG P/N

5961010821003

NSN

5961-01-082-1003

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299239-1

TRANSISTOR

NSN, MFG P/N

5961010821003

NSN

5961-01-082-1003

MFG

EDO CORP DIV EDO CORPORATION ANTENNA PRODUCTS & TECHNOLOGIES

Description

CURRENT RATING PER CHARACTERISTIC: 1.00 MICROAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, EMITTER OPEN
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: AN/APR-38
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-72
MANUFACTURERS CODE: 00752
MFR SOURCE CONTROLLING REFERENCE: 299239-1
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 25.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12.0 MAXIMUM COLLECTOR TO EMITTER VOLT

2N5179

TRANSISTOR

NSN, MFG P/N

5961010821003

NSN

5961-01-082-1003

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2N5179

TRANSISTOR

NSN, MFG P/N

5961010821003

NSN

5961-01-082-1003

MFG

FREESCALE SEMICONDUCTOR INC.

Description

CURRENT RATING PER CHARACTERISTIC: 1.00 MICROAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, EMITTER OPEN
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: AN/APR-38
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-72
MANUFACTURERS CODE: 00752
MFR SOURCE CONTROLLING REFERENCE: 299239-1
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 25.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12.0 MAXIMUM COLLECTOR TO EMITTER VOLT