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5961-01-084-4897
20 Products
584R475H01
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010844897
NSN
5961-01-084-4897
584R475H01
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010844897
NSN
5961-01-084-4897
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN SYSTEMS CORPORATION ELECTRONIC SYSTEMS
Description
DESIGN CONTROL REFERENCE: 584R475H01
III END ITEM IDENTIFICATION: F-16
MANUFACTURERS CODE: 97942
SEMICONDUCTOR MATERIAL: SILICON
THE MANUFACTURERS DATA:
Related Searches:
JANTX1N4487
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010844897
NSN
5961-01-084-4897
JANTX1N4487
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010844897
NSN
5961-01-084-4897
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
DESIGN CONTROL REFERENCE: 584R475H01
III END ITEM IDENTIFICATION: F-16
MANUFACTURERS CODE: 97942
SEMICONDUCTOR MATERIAL: SILICON
THE MANUFACTURERS DATA:
Related Searches:
MB6687
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010844897
NSN
5961-01-084-4897
MFG
MICROSEMI CORPORATION
Description
DESIGN CONTROL REFERENCE: 584R475H01
III END ITEM IDENTIFICATION: F-16
MANUFACTURERS CODE: 97942
SEMICONDUCTOR MATERIAL: SILICON
THE MANUFACTURERS DATA:
Related Searches:
1N5645A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010844899
NSN
5961-01-084-4899
MFG
TEXAS INSTRUMENTS DEUTSCHLAND GMBH
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N5645A
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-S-19500/500
OVERALL DIAMETER: 0.235 INCHES MAXIMUM
OVERALL LENGTH: 0.357 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM REVERSE POWER DISSIPATION, DC
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 1.625 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 82349-MIL-S-19500/500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 31.4 MAXIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
260340
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010844899
NSN
5961-01-084-4899
MFG
SELEX COMMUNICATIONS GMBH
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N5645A
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-S-19500/500
OVERALL DIAMETER: 0.235 INCHES MAXIMUM
OVERALL LENGTH: 0.357 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM REVERSE POWER DISSIPATION, DC
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 1.625 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 82349-MIL-S-19500/500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 31.4 MAXIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
E20-177-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010844899
NSN
5961-01-084-4899
E20-177-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010844899
NSN
5961-01-084-4899
MFG
GE AVIATION SYSTEMS LLC DBA GE AVIATION
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N5645A
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-S-19500/500
OVERALL DIAMETER: 0.235 INCHES MAXIMUM
OVERALL LENGTH: 0.357 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM REVERSE POWER DISSIPATION, DC
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 1.625 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 82349-MIL-S-19500/500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 31.4 MAXIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
JAN1N5645A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010844899
NSN
5961-01-084-4899
JAN1N5645A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010844899
NSN
5961-01-084-4899
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N5645A
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-S-19500/500
OVERALL DIAMETER: 0.235 INCHES MAXIMUM
OVERALL LENGTH: 0.357 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM REVERSE POWER DISSIPATION, DC
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 1.625 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 82349-MIL-S-19500/500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 31.4 MAXIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
07187/4025750-201
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010845548
NSN
5961-01-084-5548
07187/4025750-201
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010845548
NSN
5961-01-084-5548
MFG
INTERSIL CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 6.00 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 0.330 INCHES MINIMUM AND 0.505 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.544 INCHES MINIMUM AND 0.562 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 16.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 2 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE
Related Searches:
T4115D
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010845548
NSN
5961-01-084-5548
T4115D
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010845548
NSN
5961-01-084-5548
MFG
L-3 COMMUNICATIONS CORPORATION DBA COMMUNICATION SYSTEMS - EAST DIVISION
Description
CURRENT RATING PER CHARACTERISTIC: 6.00 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 0.330 INCHES MINIMUM AND 0.505 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.544 INCHES MINIMUM AND 0.562 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 16.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 2 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE
Related Searches:
C358PB
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010845549
NSN
5961-01-084-5549
C358PB
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010845549
NSN
5961-01-084-5549
MFG
POWEREX INC
Description
CURRENT RATING PER CHARACTERISTIC: 225.00 AMPERES MAXIMUM REPETITIVE PEAK ON-STATE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 1.600 INCHES MINIMUM AND 1.650 INCHES MAXIMUM
OVERALL LENGTH: 0.515 INCHES MINIMUM AND 0.565 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 FERRULE AND 2 UNINSULATED WIRE LEAD W/TERMINAL LUG
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1200.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE
Related Searches:
S23AF128
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010845549
NSN
5961-01-084-5549
S23AF128
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010845549
NSN
5961-01-084-5549
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
CURRENT RATING PER CHARACTERISTIC: 225.00 AMPERES MAXIMUM REPETITIVE PEAK ON-STATE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 1.600 INCHES MINIMUM AND 1.650 INCHES MAXIMUM
OVERALL LENGTH: 0.515 INCHES MINIMUM AND 0.565 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 FERRULE AND 2 UNINSULATED WIRE LEAD W/TERMINAL LUG
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1200.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE
Related Searches:
212-0102
TRANSISTOR
NSN, MFG P/N
5961010845826
NSN
5961-01-084-5826
MFG
BROADCAST ELECTRONICS INC .
Description
TRANSISTOR
Related Searches:
0019400-01
TRANSISTOR
NSN, MFG P/N
5961010845827
NSN
5961-01-084-5827
MFG
HARRIS TECHNICAL SERVICES CORP
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE GOLD
INCLOSURE MATERIAL: GLASS AND METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.164 INCHES
OVERALL DIAMETER: 0.175 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
OVERALL LENGTH: 0.275 INCHES MINIMUM AND 0.285 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 16.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 4 PIN
THREAD SERIES DESIGNATOR: UNC
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 25.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 3.5 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
2N5482
TRANSISTOR
NSN, MFG P/N
5961010845827
NSN
5961-01-084-5827
MFG
TRW ELECTRONICS AND DEFENSE SECTOR RF DEVICES
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE GOLD
INCLOSURE MATERIAL: GLASS AND METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.164 INCHES
OVERALL DIAMETER: 0.175 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
OVERALL LENGTH: 0.275 INCHES MINIMUM AND 0.285 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 16.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 4 PIN
THREAD SERIES DESIGNATOR: UNC
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 25.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 3.5 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
RT1116
TRANSISTOR
NSN, MFG P/N
5961010845827
NSN
5961-01-084-5827
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE GOLD
INCLOSURE MATERIAL: GLASS AND METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.164 INCHES
OVERALL DIAMETER: 0.175 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
OVERALL LENGTH: 0.275 INCHES MINIMUM AND 0.285 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 16.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 4 PIN
THREAD SERIES DESIGNATOR: UNC
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 25.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 3.5 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
HA-31024
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010845829
NSN
5961-01-084-5829
MFG
DOWTY RFL INDUSTRIES INC
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS CASE
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.200 INCHES NOMINAL
OVERALL LENGTH: 0.375 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.250 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
3718366-18
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010845830
NSN
5961-01-084-5830
3718366-18
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010845830
NSN
5961-01-084-5830
MFG
HONEYWELL INTL DBA HONEYWELL DIV BUSINESS AND GENERAL AVIATION
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
1N4148F
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010845831
NSN
5961-01-084-5831
MFG
FAIRCHILD SEMICONDUCTOR CORP COMPONENTS GROUP SUB OF SCHLUMBERGER LTD
Description
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-35
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.200 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 75.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
3718366-20
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010845831
NSN
5961-01-084-5831
3718366-20
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010845831
NSN
5961-01-084-5831
MFG
HONEYWELL INTL DBA HONEYWELL DIV BUSINESS AND GENERAL AVIATION
Description
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-35
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.200 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 75.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
DJR2634
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010845831
NSN
5961-01-084-5831
MFG
GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT
Description
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-35
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.200 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 75.0 MAXIMUM REVERSE VOLTAGE, PEAK
