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5961-01-273-6770
20 Products
151RA130
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961012736770
NSN
5961-01-273-6770
151RA130
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961012736770
NSN
5961-01-273-6770
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1300.0 REPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE AND 1500.0 NONREPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
MATERIAL: SILICON
MOUNTING METHOD: THREADED STUD
OPERATING TEMP RANGE: 0.0 TO 150.0 DEG CELSIUS
SPECIAL FEATURES: ENVIRONMENTAL PROTECTION:MOISTURE;MAX ABSOLUTE POWER RATING:10.0;TEMP IN DEG CELSIUS,POWER RATING:25.0;INCLOSURE FEATURE:HERMETICALLY SEALED
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD W/TERMINAL LUG AND 3 INSULATED WIRE LEAD W/TERMINAL LUG
Related Searches:
A3033815
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012735350
NSN
5961-01-273-5350
A3033815
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012735350
NSN
5961-01-273-5350
MFG
US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR
Description
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 25.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE ALL SEMICONDUCTOR DEVICE DIODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.450 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
SPECIAL FEATURES: ALL SEMICONDUCTOR DEVICE DIODE JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 150.0 MAXIMUM REVERSE VOLTAGE, PEAK ALL SEMICONDUCTOR DEVICE DIODE
Related Searches:
SES5603C
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012735350
NSN
5961-01-273-5350
SES5603C
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012735350
NSN
5961-01-273-5350
MFG
MICRO USPD INC
Description
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 25.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE ALL SEMICONDUCTOR DEVICE DIODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.450 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
SPECIAL FEATURES: ALL SEMICONDUCTOR DEVICE DIODE JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 150.0 MAXIMUM REVERSE VOLTAGE, PEAK ALL SEMICONDUCTOR DEVICE DIODE
Related Searches:
60CDQ035
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012735360
NSN
5961-01-273-5360
60CDQ035
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012735360
NSN
5961-01-273-5360
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
OPERATING TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.450 INCHES NOMINAL
OVERALL LENGTH: 1.550 INCHES NOMINAL
OVERALL WIDTH: 1.050 INCHES NOMINAL
Related Searches:
MBR3035CT
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012735360
NSN
5961-01-273-5360
MBR3035CT
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012735360
NSN
5961-01-273-5360
MFG
FREESCALE SEMICONDUCTOR INC.
Description
OPERATING TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.450 INCHES NOMINAL
OVERALL LENGTH: 1.550 INCHES NOMINAL
OVERALL WIDTH: 1.050 INCHES NOMINAL
Related Searches:
VSK3030T
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012735360
NSN
5961-01-273-5360
VSK3030T
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012735360
NSN
5961-01-273-5360
MFG
MICRO QUALITY SEMICONDUCTOR INC SUB OF MICROSEMI CORP
Description
OPERATING TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.450 INCHES NOMINAL
OVERALL LENGTH: 1.550 INCHES NOMINAL
OVERALL WIDTH: 1.050 INCHES NOMINAL
Related Searches:
SKD25/12
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012735361
NSN
5961-01-273-5361
SKD25/12
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012735361
NSN
5961-01-273-5361
MFG
SEMIKRON INTL INC
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 20.00 AMPERES OFF-STATE CURRENT, INSTANTANEOUS
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1200.0 NONREPETITIVE PEAK REVERSE VOLTAGE AND 1200.0 REPETITIVE PEAK REVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A8 BRIDGE 3 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 10.0 MILLIMETERS NOMINAL
OVERALL LENGTH: 28.5 MILLIMETERS NOMINAL
OVERALL WIDTH: 28.5 MILLIMETERS NOMINAL
TERMINAL TYPE AND QUANTITY: 5 QUICK DISCONNECT, MALE
Related Searches:
8-729-316-12
TRANSISTOR
NSN, MFG P/N
5961012735393
NSN
5961-01-273-5393
MFG
SONY CORPORATION
Description
TRANSISTOR
Related Searches:
8-729-398-63
TRANSISTOR
NSN, MFG P/N
5961012735393
NSN
5961-01-273-5393
MFG
GREEN TELE-RADIO DISTRIBUTORS INC
Description
TRANSISTOR
Related Searches:
0N365579-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012735748
NSN
5961-01-273-5748
0N365579-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012735748
NSN
5961-01-273-5748
MFG
NATIONAL SECURITY AGENCY
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
0N365343-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012735749
NSN
5961-01-273-5749
0N365343-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012735749
NSN
5961-01-273-5749
MFG
NATIONAL SECURITY AGENCY
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
0N365346-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012735750
NSN
5961-01-273-5750
0N365346-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012735750
NSN
5961-01-273-5750
MFG
NATIONAL SECURITY AGENCY
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
K2616
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012736610
NSN
5961-01-273-6610
MFG
M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
6011573-001
TRANSISTOR
NSN, MFG P/N
5961012736732
NSN
5961-01-273-6732
MFG
BAE SYSTEMS NATIONAL SECURITY SOLUTIONS INC.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES MAXIMUM GATE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND BURN IN AND ELECTROSTATIC SENSITIVE
III END ITEM IDENTIFICATION: ARLEIGH BURKE CLASS DDG, AUSTIN SHIP CLASS LPD-4 AMPHIBIOUS TRANSPORT DOCKS, 2M/ATE MICROMINAUTURE AUTOMATIC TEST EQUIPMENT. SUPPLY CLASS AOE, WHIDBEY ISLAND CLASS LSD, OLIVER PERRY CLASS FFG, TICONDEROGA CLASS CG (47), SPRUANCE CLASS DD (963). F-16
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.115 INCHES MINIMUM AND 0.150 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: WEAPON SYSTEM E
Related Searches:
FN5014
TRANSISTOR
NSN, MFG P/N
5961012736732
NSN
5961-01-273-6732
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES MAXIMUM GATE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND BURN IN AND ELECTROSTATIC SENSITIVE
III END ITEM IDENTIFICATION: ARLEIGH BURKE CLASS DDG, AUSTIN SHIP CLASS LPD-4 AMPHIBIOUS TRANSPORT DOCKS, 2M/ATE MICROMINAUTURE AUTOMATIC TEST EQUIPMENT. SUPPLY CLASS AOE, WHIDBEY ISLAND CLASS LSD, OLIVER PERRY CLASS FFG, TICONDEROGA CLASS CG (47), SPRUANCE CLASS DD (963). F-16
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.115 INCHES MINIMUM AND 0.150 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: WEAPON SYSTEM E
Related Searches:
SPC-410
TRANSISTOR
NSN, MFG P/N
5961012736733
NSN
5961-01-273-6733
MFG
API ELECTRONICS INC.
Description
CURRENT RATING PER CHARACTERISTIC: 3.50 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.450 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 80.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
TRANSFER RATIO: 30.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER AND 90.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM COLLECTOR-TO-EMITTER, SUBSTAINING VOLTAGE, BASE OPEN-CIRCUITED
Related Searches:
2916031
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012736734
NSN
5961-01-273-6734
MFG
NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER
Description
FUNCTION FOR WHICH DESIGNED: MICROWAVE AND SWITCHING
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: EUTETIC BACK AND TOP METALLIZATION GOLD
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: PRESS FIT
OVERALL HEIGHT: 0.005 INCHES NOMINAL
OVERALL LENGTH: 0.020 INCHES NOMINAL
OVERALL WIDTH: 0.020 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE BREAKDOWN VOLTAGE, DC
Related Searches:
CSM7300A-92
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012736734
NSN
5961-01-273-6734
CSM7300A-92
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012736734
NSN
5961-01-273-6734
MFG
SKYWORKS SOLUTIONS INC.
Description
FUNCTION FOR WHICH DESIGNED: MICROWAVE AND SWITCHING
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: EUTETIC BACK AND TOP METALLIZATION GOLD
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: PRESS FIT
OVERALL HEIGHT: 0.005 INCHES NOMINAL
OVERALL LENGTH: 0.020 INCHES NOMINAL
OVERALL WIDTH: 0.020 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE BREAKDOWN VOLTAGE, DC
Related Searches:
DN102213-000
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012736734
NSN
5961-01-273-6734
DN102213-000
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012736734
NSN
5961-01-273-6734
MFG
SDI INC
Description
FUNCTION FOR WHICH DESIGNED: MICROWAVE AND SWITCHING
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: EUTETIC BACK AND TOP METALLIZATION GOLD
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: PRESS FIT
OVERALL HEIGHT: 0.005 INCHES NOMINAL
OVERALL LENGTH: 0.020 INCHES NOMINAL
OVERALL WIDTH: 0.020 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE BREAKDOWN VOLTAGE, DC
Related Searches:
ICTE-8C
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012736736
NSN
5961-01-273-6736
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 AMPERES MAXIMUM PEAK REVERSE SURGE CURRENT
FUNCTION FOR WHICH DESIGNED: TRANSIENT SUPPRESSOR
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.205 INCHES MAXIMUM
OVERALL LENGTH: 0.375 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.100 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
