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5961-01-098-7960

20 Products

147386-1

TRANSISTOR

NSN, MFG P/N

5961010987960

NSN

5961-01-098-7960

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147386-1

TRANSISTOR

NSN, MFG P/N

5961010987960

NSN

5961-01-098-7960

MFG

CUBIC DEFENSE APPLICATIONS INC.

Description

CURRENT RATING PER CHARACTERISTIC: 35.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 94987
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MFR SOURCE CONTROLLING REFERENCE: 147386-1
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.195 INCHES MINIMUM AND 0.215 INCHES MAXIMUM
OVERALL LENGTH: 0.050 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 630.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 4 TAB, SOLDER LUG
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 27.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN

35829B-H02

TRANSISTOR

NSN, MFG P/N

5961010987960

NSN

5961-01-098-7960

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35829B-H02

TRANSISTOR

NSN, MFG P/N

5961010987960

NSN

5961-01-098-7960

MFG

AGILENT TECHNOLOGIES INC. DBA NORTH AMERICAN CONTACT CENTER DIV AGILENT BUSINESS CENTER

Description

CURRENT RATING PER CHARACTERISTIC: 35.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 94987
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MFR SOURCE CONTROLLING REFERENCE: 147386-1
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.195 INCHES MINIMUM AND 0.215 INCHES MAXIMUM
OVERALL LENGTH: 0.050 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 630.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 4 TAB, SOLDER LUG
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 27.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN

2N5882

TRANSISTOR

NSN, MFG P/N

5961010987961

NSN

5961-01-098-7961

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2N5882

TRANSISTOR

NSN, MFG P/N

5961010987961

NSN

5961-01-098-7961

MFG

FREESCALE SEMICONDUCTOR INC.

Description

CURRENT RATING PER CHARACTERISTIC: 15.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 5.00 AMPERES MAXIMUM BASE CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.830 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 160.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC AND 80.0 MAXIMUM CO

64-191-007

TRANSISTOR

NSN, MFG P/N

5961010987961

NSN

5961-01-098-7961

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64-191-007

TRANSISTOR

NSN, MFG P/N

5961010987961

NSN

5961-01-098-7961

MFG

ASTEC AMERICA INC .

Description

CURRENT RATING PER CHARACTERISTIC: 15.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 5.00 AMPERES MAXIMUM BASE CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.830 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 160.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC AND 80.0 MAXIMUM CO

147413-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010987963

NSN

5961-01-098-7963

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147413-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010987963

NSN

5961-01-098-7963

MFG

CUBIC DEFENSE APPLICATIONS INC.

Description

CURRENT RATING PER CHARACTERISTIC: 5.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 94987
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MFR SOURCE CONTROLLING REFERENCE: 147413-1
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.108 INCHES MINIMUM AND 0.140 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 600.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL CIRCLE DIAMETER: 0.018 INCHES MINIMUM AND 0.022 INCHES MAXIMUM
TERMINAL LENGTH: 1.000 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE

1N4814B

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010987963

NSN

5961-01-098-7963

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1N4814B

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010987963

NSN

5961-01-098-7963

MFG

API ELECTRONICS INC.

Description

CURRENT RATING PER CHARACTERISTIC: 5.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 94987
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MFR SOURCE CONTROLLING REFERENCE: 147413-1
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.108 INCHES MINIMUM AND 0.140 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 600.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL CIRCLE DIAMETER: 0.018 INCHES MINIMUM AND 0.022 INCHES MAXIMUM
TERMINAL LENGTH: 1.000 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE

V1070

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010987963

NSN

5961-01-098-7963

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V1070

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010987963

NSN

5961-01-098-7963

MFG

TRW ELECTRONICS AND DEFENSE SECTOR RF DEVICES

Description

CURRENT RATING PER CHARACTERISTIC: 5.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 94987
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MFR SOURCE CONTROLLING REFERENCE: 147413-1
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.108 INCHES MINIMUM AND 0.140 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 600.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL CIRCLE DIAMETER: 0.018 INCHES MINIMUM AND 0.022 INCHES MAXIMUM
TERMINAL LENGTH: 1.000 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE

147389-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010987964

NSN

5961-01-098-7964

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147389-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010987964

NSN

5961-01-098-7964

MFG

CUBIC DEFENSE APPLICATIONS INC.

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 94987
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MFR SOURCE CONTROLLING REFERENCE: 147389-1
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.108 INCHES MINIMUM AND 0.140 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 600.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL CIRCLE DIAMETER: 0.018 INCHES MINIMUM AND 0.022 INCHES MAXIMUM
TERMINAL LENGTH: 1.000 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE

1N4805B

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010987964

NSN

5961-01-098-7964

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1N4805B

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010987964

NSN

5961-01-098-7964

MFG

API ELECTRONICS INC.

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 94987
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MFR SOURCE CONTROLLING REFERENCE: 147389-1
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.108 INCHES MINIMUM AND 0.140 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 600.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL CIRCLE DIAMETER: 0.018 INCHES MINIMUM AND 0.022 INCHES MAXIMUM
TERMINAL LENGTH: 1.000 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE

V1069

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010987964

NSN

5961-01-098-7964

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V1069

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010987964

NSN

5961-01-098-7964

MFG

TRW ELECTRONICS AND DEFENSE SECTOR RF DEVICES

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 94987
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MFR SOURCE CONTROLLING REFERENCE: 147389-1
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.108 INCHES MINIMUM AND 0.140 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 600.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL CIRCLE DIAMETER: 0.018 INCHES MINIMUM AND 0.022 INCHES MAXIMUM
TERMINAL LENGTH: 1.000 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE

5082-2302

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010987965

NSN

5961-01-098-7965

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5082-2302

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010987965

NSN

5961-01-098-7965

MFG

AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES

Description

INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.068 INCHES MINIMUM AND 0.076 INCHES MAXIMUM
OVERALL LENGTH: 0.145 INCHES MINIMUM AND 0.170 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD

HPA 2302

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010987965

NSN

5961-01-098-7965

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HPA 2302

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010987965

NSN

5961-01-098-7965

MFG

HEWLETT PACKARD CO

Description

INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.068 INCHES MINIMUM AND 0.076 INCHES MAXIMUM
OVERALL LENGTH: 0.145 INCHES MINIMUM AND 0.170 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD

MD0080

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010987965

NSN

5961-01-098-7965

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MD0080

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010987965

NSN

5961-01-098-7965

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.068 INCHES MINIMUM AND 0.076 INCHES MAXIMUM
OVERALL LENGTH: 0.145 INCHES MINIMUM AND 0.170 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD

MS1400

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010987965

NSN

5961-01-098-7965

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MS1400

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010987965

NSN

5961-01-098-7965

MFG

SOLITRON DEVICES INC.

Description

INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.068 INCHES MINIMUM AND 0.076 INCHES MAXIMUM
OVERALL LENGTH: 0.145 INCHES MINIMUM AND 0.170 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD

SES433

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010987965

NSN

5961-01-098-7965

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SES433

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010987965

NSN

5961-01-098-7965

MFG

SEMITRONICS CORP

Description

INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.068 INCHES MINIMUM AND 0.076 INCHES MAXIMUM
OVERALL LENGTH: 0.145 INCHES MINIMUM AND 0.170 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD

SM-A-595827-4

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010987965

NSN

5961-01-098-7965

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SM-A-595827-4

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010987965

NSN

5961-01-098-7965

MFG

US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR

Description

INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.068 INCHES MINIMUM AND 0.076 INCHES MAXIMUM
OVERALL LENGTH: 0.145 INCHES MINIMUM AND 0.170 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD

6002-6007-2

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961010988177

NSN

5961-01-098-8177

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6002-6007-2

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961010988177

NSN

5961-01-098-8177

MFG

RFD INC

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS AND CASE SURFACE GOLD
OVERALL HEIGHT: 0.128 INCHES MINIMUM AND 0.135 INCHES MAXIMUM
OVERALL LENGTH: 0.555 INCHES MINIMUM AND 0.559 INCHES MAXIMUM
OVERALL WIDTH: 0.244 INCHES MINIMUM AND 0.248 INCHES MAXIMUM

M02949-98

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961010988177

NSN

5961-01-098-8177

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M02949-98

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961010988177

NSN

5961-01-098-8177

MFG

SKYWORKS SOLUTIONS INC.

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS AND CASE SURFACE GOLD
OVERALL HEIGHT: 0.128 INCHES MINIMUM AND 0.135 INCHES MAXIMUM
OVERALL LENGTH: 0.555 INCHES MINIMUM AND 0.559 INCHES MAXIMUM
OVERALL WIDTH: 0.244 INCHES MINIMUM AND 0.248 INCHES MAXIMUM

6002-6007-1

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961010988178

NSN

5961-01-098-8178

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6002-6007-1

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961010988178

NSN

5961-01-098-8178

MFG

RFD INC

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: EXTERNAL SURFACES GOLD
OVERALL HEIGHT: 0.128 INCHES MINIMUM AND 0.135 INCHES MAXIMUM
OVERALL LENGTH: 0.555 INCHES MINIMUM AND 0.559 INCHES MAXIMUM
OVERALL WIDTH: 0.244 INCHES MINIMUM AND 0.248 INCHES MAXIMUM

M02961-98

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961010988178

NSN

5961-01-098-8178

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M02961-98

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961010988178

NSN

5961-01-098-8178

MFG

SKYWORKS SOLUTIONS INC.

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: EXTERNAL SURFACES GOLD
OVERALL HEIGHT: 0.128 INCHES MINIMUM AND 0.135 INCHES MAXIMUM
OVERALL LENGTH: 0.555 INCHES MINIMUM AND 0.559 INCHES MAXIMUM
OVERALL WIDTH: 0.244 INCHES MINIMUM AND 0.248 INCHES MAXIMUM