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5961-01-116-8763
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352-8530-010
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961011168763
NSN
5961-01-116-8763
352-8530-010
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961011168763
NSN
5961-01-116-8763
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 15.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL ALL TRANSISTOR
INTERNAL CONFIGURATION: JUNCTION CONTACT ALL TRANSISTOR
INTERNAL JUNCTION CONFIGURATION: NPN ALL TRANSISTOR
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION ALL TRANSISTOR
MOUNTING FACILITY QUANTITY: 2 ALL TRANSISTOR
MOUNTING METHOD: UNTHREADED HOLE ALL TRANSISTOR
OVERALL HEIGHT: 0.229 INCHES MINIMUM AND 0.290 INCHES MAXIMUM ALL TRANSISTOR
OVERALL LENGTH: 0.697 INCHES MINIMUM AND 0.730 INCHES MAXIMUM ALL TRANSISTOR
OVERALL WIDTH: 0.970 INCHES MINIMUM AND 1.143 INCHES MAXIMUM ALL TRANSISTOR
POWER RATING PER CHARACTERISTIC: 300.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL TYPE AND QUANTITY: 4 RIBBON ALL TRANSISTOR
VOL
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NSN, MFG P/N
5961011168763
NSN
5961-01-116-8763
MFG
FREESCALE SEMICONDUCTOR INC.
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 15.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL ALL TRANSISTOR
INTERNAL CONFIGURATION: JUNCTION CONTACT ALL TRANSISTOR
INTERNAL JUNCTION CONFIGURATION: NPN ALL TRANSISTOR
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION ALL TRANSISTOR
MOUNTING FACILITY QUANTITY: 2 ALL TRANSISTOR
MOUNTING METHOD: UNTHREADED HOLE ALL TRANSISTOR
OVERALL HEIGHT: 0.229 INCHES MINIMUM AND 0.290 INCHES MAXIMUM ALL TRANSISTOR
OVERALL LENGTH: 0.697 INCHES MINIMUM AND 0.730 INCHES MAXIMUM ALL TRANSISTOR
OVERALL WIDTH: 0.970 INCHES MINIMUM AND 1.143 INCHES MAXIMUM ALL TRANSISTOR
POWER RATING PER CHARACTERISTIC: 300.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL TYPE AND QUANTITY: 4 RIBBON ALL TRANSISTOR
VOL
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NSN, MFG P/N
5961011168763
NSN
5961-01-116-8763
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SHUR-FAST FASTENERS INC
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 15.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL ALL TRANSISTOR
INTERNAL CONFIGURATION: JUNCTION CONTACT ALL TRANSISTOR
INTERNAL JUNCTION CONFIGURATION: NPN ALL TRANSISTOR
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION ALL TRANSISTOR
MOUNTING FACILITY QUANTITY: 2 ALL TRANSISTOR
MOUNTING METHOD: UNTHREADED HOLE ALL TRANSISTOR
OVERALL HEIGHT: 0.229 INCHES MINIMUM AND 0.290 INCHES MAXIMUM ALL TRANSISTOR
OVERALL LENGTH: 0.697 INCHES MINIMUM AND 0.730 INCHES MAXIMUM ALL TRANSISTOR
OVERALL WIDTH: 0.970 INCHES MINIMUM AND 1.143 INCHES MAXIMUM ALL TRANSISTOR
POWER RATING PER CHARACTERISTIC: 300.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL TYPE AND QUANTITY: 4 RIBBON ALL TRANSISTOR
VOL
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S150-50
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961011168763
NSN
5961-01-116-8763
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VARIAN ASSOCIATES INC COMMUNICATIONS TRANSISTOR DIV
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 15.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL ALL TRANSISTOR
INTERNAL CONFIGURATION: JUNCTION CONTACT ALL TRANSISTOR
INTERNAL JUNCTION CONFIGURATION: NPN ALL TRANSISTOR
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION ALL TRANSISTOR
MOUNTING FACILITY QUANTITY: 2 ALL TRANSISTOR
MOUNTING METHOD: UNTHREADED HOLE ALL TRANSISTOR
OVERALL HEIGHT: 0.229 INCHES MINIMUM AND 0.290 INCHES MAXIMUM ALL TRANSISTOR
OVERALL LENGTH: 0.697 INCHES MINIMUM AND 0.730 INCHES MAXIMUM ALL TRANSISTOR
OVERALL WIDTH: 0.970 INCHES MINIMUM AND 1.143 INCHES MAXIMUM ALL TRANSISTOR
POWER RATING PER CHARACTERISTIC: 300.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL TYPE AND QUANTITY: 4 RIBBON ALL TRANSISTOR
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352-8531-010
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961011168764
NSN
5961-01-116-8764
352-8531-010
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961011168764
NSN
5961-01-116-8764
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
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CD4513-4
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NSN, MFG P/N
5961011168764
NSN
5961-01-116-8764
MFG
VARIAN ASSOCIATES INC COMMUNICATIONS TRANSISTOR DIV
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
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NSN, MFG P/N
5961011168764
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5961-01-116-8764
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FREESCALE SEMICONDUCTOR INC.
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
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SEMICONDUCTOR DEVICE,DIODE
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5961011168897
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5961-01-116-8897
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011168897
NSN
5961-01-116-8897
MFG
MOTOROLA INC MOTOROLA AUTOMOTIVE ELECTRONICS
Description
INCLOSURE MATERIAL: METAL
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
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D4NN-10378-A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011168897
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5961-01-116-8897
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011168897
NSN
5961-01-116-8897
MFG
FORD MOTOR CO
Description
INCLOSURE MATERIAL: METAL
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
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SEMICONDUCTOR DEVICE,DIODE
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5961011168897
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5961-01-116-8897
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011168897
NSN
5961-01-116-8897
MFG
NEW HOLLAND N.V.NC.
Description
INCLOSURE MATERIAL: METAL
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
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1261915-128
TRANSISTOR
NSN, MFG P/N
5961011171345
NSN
5961-01-117-1345
MFG
HONEYWELL INTL INC DEFENSE AVIONICS SYSTEMS
Description
TRANSISTOR
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2N2243A
TRANSISTOR
NSN, MFG P/N
5961011171345
NSN
5961-01-117-1345
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
TRANSISTOR
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SEMICONDUCTOR DEVICE,DIODE
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5961011171351
NSN
5961-01-117-1351
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CONRAC SYSTEMS INC
Description
SEMICONDUCTOR DEVICE,DIODE
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2N3421
TRANSISTOR
NSN, MFG P/N
5961011171648
NSN
5961-01-117-1648
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: 2N3421
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
INCLOSURE MATERIAL: METAL
INTERNAL JUNCTION CONFIGURATION: NPN
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-5
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 3
MOUNTING METHOD: UNTHREADED HOLE
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/393
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 1.500 INCHES MINIMUM AND 1.750 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 SOLDER STUD
TEST DATA DOCUMENT: 81349-MIL-S-19500/393
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NSN, MFG P/N
5961011171649
NSN
5961-01-117-1649
MFG
RAYMOND CORPORATION THE
Description
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5961011171649
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5961-01-117-1649
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INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
TRANSISTOR
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TRANSISTOR
NSN, MFG P/N
5961011171649
NSN
5961-01-117-1649
MFG
NATIONAL ELECTRONICS DIV OF RICHARDSON ELECTRONICS LTD
Description
TRANSISTOR
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NSN, MFG P/N
5961011171649
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5961-01-117-1649
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GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT POWER COMPONENTS OPN
Description
TRANSISTOR
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5961011171649
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5961-01-117-1649
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NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN SYSTEMS CORPORATION ELECTRONIC SYSTEMS
Description
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NSN, MFG P/N
5961011171650
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5961-01-117-1650
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 15.00 MILLIAMPERES MAXIMUM REVERSE CURRENT, AVERAGE
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL AND PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 190.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.375 INCHES
OVERALL LENGTH: 5.000 INCHES MINIMUM AND 5.500 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 UNINSULATED WIRE LEAD W/TERMINAL LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 0.4 MAXIMUM FORWARD VOLTAGE, AVERAGE AND 720.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE AND 600.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE AND 420.0 MAXIMUM REVERSE VOLTAGE, TOTAL RMS AND 600.0 MAXIMUM
~1: WORKING P
