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5961-01-117-8033
20 Products
44-1114010-6
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011178033
NSN
5961-01-117-8033
44-1114010-6
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011178033
NSN
5961-01-117-8033
MFG
LIEBERT CORP PROGRAMMED POWER DIV
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
109402-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011176183
NSN
5961-01-117-6183
109402-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011176183
NSN
5961-01-117-6183
MFG
LITTON SYSTEMS INC. DIV NAVIGATION SYSTEMS DIVISION
Description
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: WASP CLASS LHD
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
Related Searches:
5082-4410
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011176183
NSN
5961-01-117-6183
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: WASP CLASS LHD
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
Related Searches:
5082-4801
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011176183
NSN
5961-01-117-6183
MFG
HEWLETT PACKARD CO
Description
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: WASP CLASS LHD
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
Related Searches:
PG2388
TRANSISTOR
NSN, MFG P/N
5961011176381
NSN
5961-01-117-6381
MFG
SPRAGUE ELECTRIC CO WORLD HQS
Description
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: T0-3
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.875 INCHES MAXIMUM
OVERALL LENGTH: 0.375 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 65.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN
Related Searches:
JANTX1N5283
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011176383
NSN
5961-01-117-6383
JANTX1N5283
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011176383
NSN
5961-01-117-6383
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 0.24 MILLIAMPERES MAXIMUM PEAK POINT CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N5283-1
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: CURRENT REGULATOR
III END ITEM IDENTIFICATION: 1440-01-104-9834 18876 FSCM
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/463
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/463 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERIS
Related Searches:
MIS-12871
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011176383
NSN
5961-01-117-6383
MFG
U S ARMY AVIATION AND MISSILE COMMAND
Description
CURRENT RATING PER CHARACTERISTIC: 0.24 MILLIAMPERES MAXIMUM PEAK POINT CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N5283-1
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: CURRENT REGULATOR
III END ITEM IDENTIFICATION: 1440-01-104-9834 18876 FSCM
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/463
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/463 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERIS
Related Searches:
3214006-001-554
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011176469
NSN
5961-01-117-6469
3214006-001-554
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011176469
NSN
5961-01-117-6469
MFG
LOCKHEED MARTIN CORPORATION DIV LOCKHEED MARTIN INFORMATION SYSTEMS & GLOBAL SOLUTIONS
Description
COMPONENT NAME AND QUANTITY: 8 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 350.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC ALL SEMICONDUCTOR DEVICE DIODE
INCLOSURE MATERIAL: CERAMIC OR PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.785 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
TERMINAL TYPE AND QUANTITY: 16 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE ALL SEMICONDUCTOR DEVICE DIODE
Related Searches:
FSA2509M
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011176469
NSN
5961-01-117-6469
FSA2509M
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011176469
NSN
5961-01-117-6469
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
COMPONENT NAME AND QUANTITY: 8 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 350.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC ALL SEMICONDUCTOR DEVICE DIODE
INCLOSURE MATERIAL: CERAMIC OR PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.785 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
TERMINAL TYPE AND QUANTITY: 16 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE ALL SEMICONDUCTOR DEVICE DIODE
Related Searches:
MC1107L
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011176469
NSN
5961-01-117-6469
MC1107L
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011176469
NSN
5961-01-117-6469
MFG
FREESCALE SEMICONDUCTOR INC.
Description
COMPONENT NAME AND QUANTITY: 8 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 350.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC ALL SEMICONDUCTOR DEVICE DIODE
INCLOSURE MATERIAL: CERAMIC OR PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.785 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
TERMINAL TYPE AND QUANTITY: 16 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE ALL SEMICONDUCTOR DEVICE DIODE
Related Searches:
478081
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011176470
NSN
5961-01-117-6470
478081
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011176470
NSN
5961-01-117-6470
MFG
FLUKE CORPORATION
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
OVERALL DIAMETER: 0.185 INCHES NOMINAL
OVERALL LENGTH: 0.370 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 7 UNINSULATED WIRE LEAD
Related Searches:
ITS31073
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011176470
NSN
5961-01-117-6470
ITS31073
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011176470
NSN
5961-01-117-6470
MFG
INTERSIL INC SUB OF GENERAL ELECTRIC CO
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
OVERALL DIAMETER: 0.185 INCHES NOMINAL
OVERALL LENGTH: 0.370 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 7 UNINSULATED WIRE LEAD
Related Searches:
VK648
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011176471
NSN
5961-01-117-6471
VK648
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011176471
NSN
5961-01-117-6471
MFG
VARO LLC
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 300.00 AMPERES REVERSE CURRENT, TOTAL RMS AND 75.00 AMPERES REPETITIVE PEAK FORWARD CURRENT AND 30.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE AND 420.0 REVERSE VOLTAGE, TOTAL RMS
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -50.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.750 INCHES MAXIMUM
OVERALL LENGTH: 0.890 INCHES MINIMUM AND 1.040 INCHES MAXIMUM
OVERALL WIDTH: 0.890 INCHES MINIMUM AND 1.040 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 4 QUICK DISCONNECT, MALE
Related Searches:
3573989
TRANSISTOR
NSN, MFG P/N
5961011176836
NSN
5961-01-117-6836
MFG
RAYTHEON COMPANY
Description
III END ITEM IDENTIFICATION: AIRCRAFT MODEL F-18
Related Searches:
928883-1B
TRANSISTOR
NSN, MFG P/N
5961011176836
NSN
5961-01-117-6836
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
III END ITEM IDENTIFICATION: AIRCRAFT MODEL F-18
Related Searches:
7846139P002
TRANSISTOR
NSN, MFG P/N
5961011176837
NSN
5961-01-117-6837
MFG
LOCKHEED MARTIN CORPORATION DBA MS2 DIV MS2 RADAR SYSTEMS
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD
INCLOSURE MATERIAL: CERAMIC
OVERALL LENGTH: 0.070 INCHES NOMINAL
OVERALL WIDTH: 0.070 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
Related Searches:
ST6-0730
TRANSISTOR
NSN, MFG P/N
5961011176837
NSN
5961-01-117-6837
MFG
AGILENT TECHNOLOGIES INC. DIV SEMICONDUCTOR PRODUCTS GROUP BUSINESS CENTER
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD
INCLOSURE MATERIAL: CERAMIC
OVERALL LENGTH: 0.070 INCHES NOMINAL
OVERALL WIDTH: 0.070 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
Related Searches:
0N167482
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011177344
NSN
5961-01-117-7344
MFG
NATIONAL SECURITY AGENCY
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
T500028005AQ
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011177477
NSN
5961-01-117-7477
T500028005AQ
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011177477
NSN
5961-01-117-7477
MFG
WESTINGHOUSE ELECTRIC CORP SEMICONDUCTOR DIV
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM GATE CURRENT
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.500 INCHES
TERMINAL TYPE AND QUANTITY: 3 INSULATED WIRE LEAD W/TERMINAL LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
Related Searches:
QIPF-310
RECTIFIER ASSEMBLY
NSN, MFG P/N
5961011177544
NSN
5961-01-117-7544
MFG
ABB CONTROL INC
Description
GENERAL CHARACTERISTICS ITEM DESCRIPTION: FOR ROLLING MILL CONTROLS
