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5961-01-038-4145

20 Products

MRD602

TRANSISTOR

NSN, MFG P/N

5961010384145

NSN

5961-01-038-4145

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MRD602

TRANSISTOR

NSN, MFG P/N

5961010384145

NSN

5961-01-038-4145

MFG

GENERAL INSTRUMENT CORP OPTOELECTRONICS DIV

2N3777

TRANSISTOR

NSN, MFG P/N

5961010384205

NSN

5961-01-038-4205

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2N3777

TRANSISTOR

NSN, MFG P/N

5961010384205

NSN

5961-01-038-4205

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

INTERNAL CONFIGURATION: JUNCTION CONTACT
OVERALL DIAMETER: 0.305 INCHES MINIMUM AND 0.335 INCHES MAXIMUM
OVERALL HEIGHT: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD

352250012177

TRANSISTOR

NSN, MFG P/N

5961010384205

NSN

5961-01-038-4205

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352250012177

TRANSISTOR

NSN, MFG P/N

5961010384205

NSN

5961-01-038-4205

MFG

THALES NEDERLAND

Description

INTERNAL CONFIGURATION: JUNCTION CONTACT
OVERALL DIAMETER: 0.305 INCHES MINIMUM AND 0.335 INCHES MAXIMUM
OVERALL HEIGHT: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD

2N5290

TRANSISTOR

NSN, MFG P/N

5961010384206

NSN

5961-01-038-4206

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2N5290

TRANSISTOR

NSN, MFG P/N

5961010384206

NSN

5961-01-038-4206

MFG

INTERSIL CORPORATION

Description

INTERNAL CONFIGURATION: JUNCTION CONTACT
OVERALL DIAMETER: 0.667 INCHES MINIMUM AND 0.687 INCHES MAXIMUM
OVERALL HEIGHT: 0.370 INCHES MINIMUM AND 0.430 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 100.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG

1N5555

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010385136

NSN

5961-01-038-5136

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1N5555

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010385136

NSN

5961-01-038-5136

MFG

GENERAL SEMICONDUCTOR INDUSTRIES INC

Description

CURRENT RATING PER CHARACTERISTIC: 1.00 MILLIAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: AN/GRN27
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-13
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.215 INCHES MINIMUM AND 0.235 INCHES MAXIMUM
OVERALL LENGTH: 0.293 INCHES MINIMUM AND 0.357 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM FORWARD POWER DISSIPATION, DC
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: TRANSIENT SUPPRESSOR
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 33.0 MAXIMUM BREAKDOWN VOLTAGE, DC

803044-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010385136

NSN

5961-01-038-5136

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803044-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010385136

NSN

5961-01-038-5136

MFG

RAYTHEON COMPANY

Description

CURRENT RATING PER CHARACTERISTIC: 1.00 MILLIAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: AN/GRN27
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-13
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.215 INCHES MINIMUM AND 0.235 INCHES MAXIMUM
OVERALL LENGTH: 0.293 INCHES MINIMUM AND 0.357 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM FORWARD POWER DISSIPATION, DC
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: TRANSIENT SUPPRESSOR
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 33.0 MAXIMUM BREAKDOWN VOLTAGE, DC

MDA970-2

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961010385240

NSN

5961-01-038-5240

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MDA970-2

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961010385240

NSN

5961-01-038-5240

MFG

FREESCALE SEMICONDUCTOR INC.

Description

CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
DESIGN CONTROL REFERENCE: ME43800400001
MANUFACTURERS CODE: 18876
OVERALL HEIGHT: 0.240 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
OVERALL LENGTH: 0.880 INCHES MINIMUM AND 0.920 INCHES MAXIMUM
OVERALL WIDTH: 0.715 INCHES MINIMUM AND 0.755 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

ME43800400001

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961010385240

NSN

5961-01-038-5240

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ME43800400001

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961010385240

NSN

5961-01-038-5240

MFG

U S ARMY AVIATION AND MISSILE COMMAND

Description

CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
DESIGN CONTROL REFERENCE: ME43800400001
MANUFACTURERS CODE: 18876
OVERALL HEIGHT: 0.240 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
OVERALL LENGTH: 0.880 INCHES MINIMUM AND 0.920 INCHES MAXIMUM
OVERALL WIDTH: 0.715 INCHES MINIMUM AND 0.755 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

SDHD15KM

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961010385583

NSN

5961-01-038-5583

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SDHD15KM

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961010385583

NSN

5961-01-038-5583

MFG

SEMTECH CORPUS CHRISTI.A. DE C.V. REYNOSA FACILITY

Description

ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 15000.0 PEAK INVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A2 CENTER TAP 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: SLOT
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 1.320 INCHES MAXIMUM
OVERALL LENGTH: 6.090 INCHES NOMINAL
OVERALL WIDTH: 0.630 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG

SM-A-883094

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961010385583

NSN

5961-01-038-5583

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SM-A-883094

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961010385583

NSN

5961-01-038-5583

MFG

US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR

Description

ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 15000.0 PEAK INVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A2 CENTER TAP 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: SLOT
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 1.320 INCHES MAXIMUM
OVERALL LENGTH: 6.090 INCHES NOMINAL
OVERALL WIDTH: 0.630 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG

74113

TRANSISTOR

NSN, MFG P/N

5961010385638

NSN

5961-01-038-5638

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74113

TRANSISTOR

NSN, MFG P/N

5961010385638

NSN

5961-01-038-5638

MFG

KLEINSCHMIDT INC

Description

INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON

MP506A

TRANSISTOR

NSN, MFG P/N

5961010385641

NSN

5961-01-038-5641

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MP506A

TRANSISTOR

NSN, MFG P/N

5961010385641

NSN

5961-01-038-5641

MFG

GPD OPTOELECTRONICS CORP.

Description

ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 110.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL DIAMETER: 1.250 INCHES MAXIMUM
OVERALL LENGTH: 0.360 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 170.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNEF

900-014-489

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010385642

NSN

5961-01-038-5642

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900-014-489

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010385642

NSN

5961-01-038-5642

MFG

RAYMOND CORPORATION THE

SQ1726

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010385643

NSN

5961-01-038-5643

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SQ1726

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010385643

NSN

5961-01-038-5643

MFG

API ELECTRONICS INC.

Description

CURRENT RATING PER CHARACTERISTIC: 0.02 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-7
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: 12 PF DIODE CAPACITANCE
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM REVERSE VOLTAGE, PEAK

04420034-001

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010385645

NSN

5961-01-038-5645

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04420034-001

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010385645

NSN

5961-01-038-5645

MFG

GETRONICS GOVERNMENT SOLUTIONS LLC

Description

CURRENT RATING PER CHARACTERISTIC: 1.50 AMPERES MAXIMUM FORWARD CURRENT, TOTAL RMS
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.160 INCHES MAXIMUM
OVERALL LENGTH: 0.360 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 53178-04420034 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 0.9 MAXIMUM FORWARD VOLTAGE, TOTAL RMS

EM5227

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010385645

NSN

5961-01-038-5645

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EM5227

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010385645

NSN

5961-01-038-5645

MFG

ITT SEMICONDUCTORS DIV

Description

CURRENT RATING PER CHARACTERISTIC: 1.50 AMPERES MAXIMUM FORWARD CURRENT, TOTAL RMS
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.160 INCHES MAXIMUM
OVERALL LENGTH: 0.360 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 53178-04420034 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 0.9 MAXIMUM FORWARD VOLTAGE, TOTAL RMS

S1836

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010385645

NSN

5961-01-038-5645

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S1836

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010385645

NSN

5961-01-038-5645

MFG

SEMICON COMPONENTS INC

Description

CURRENT RATING PER CHARACTERISTIC: 1.50 AMPERES MAXIMUM FORWARD CURRENT, TOTAL RMS
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.160 INCHES MAXIMUM
OVERALL LENGTH: 0.360 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 53178-04420034 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 0.9 MAXIMUM FORWARD VOLTAGE, TOTAL RMS

JAN1N5627

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010385647

NSN

5961-01-038-5647

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JAN1N5627

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010385647

NSN

5961-01-038-5647

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

CURRENT RATING PER CHARACTERISTIC: 125.00 AMPERES MAXIMUM PEAK REVERSE SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N5627
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MILS19500-432
OVERALL DIAMETER: 0.160 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.200 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 18.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/432 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.900 INCHES MINIMUM AND 1.250 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 MAXIMUM WORKING PEAK RE

000-8002-239

RETAINER,LED

NSN, MFG P/N

5961010386706

NSN

5961-01-038-6706

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000-8002-239

RETAINER,LED

NSN, MFG P/N

5961010386706

NSN

5961-01-038-6706

MFG

BOEING COMPANY THE DBA BOEING DIV DEFENSE SPACE & SECURITY - NETWORK & SPACE SYSTEMS

Description

GENERAL CHARACTERISTICS ITEM DESCRIPTION: 2 PIECE MTG GROMMENTS MTD ON A 0.125 IN. MAX THK BLACK PLASTIC PANEL

139310010

RETAINER,LED

NSN, MFG P/N

5961010386706

NSN

5961-01-038-6706

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139310010

RETAINER,LED

NSN, MFG P/N

5961010386706

NSN

5961-01-038-6706

MFG

EATON CORPORATION

Description

GENERAL CHARACTERISTICS ITEM DESCRIPTION: 2 PIECE MTG GROMMENTS MTD ON A 0.125 IN. MAX THK BLACK PLASTIC PANEL