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5961-01-135-0719
20 Products
5883
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011350719
NSN
5961-01-135-0719
MFG
PHILIPS ECG INC DIV OF NORTH AMERICAN PHILIPS CORP
Description
CURRENT RATING PER CHARACTERISTIC: 12.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-4
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 190.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 0.405 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.437 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 3.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 MAXIMUM REVERSE VOLTAGE, PEAK AND 350.0 MAXIMUM REVERSE VOLTAGE, TOTAL RMS
Related Searches:
723408-004
RECTIFIER
NSN, MFG P/N
5961011350430
NSN
5961-01-135-0430
MFG
HONEYWELL INTERNATIONAL INC. DBA HONEYWELL DIV AEROSPACE - PHOENIX
Description
RECTIFIER
Related Searches:
PNP2444
TRANSISTOR
NSN, MFG P/N
5961011350703
NSN
5961-01-135-0703
MFG
EXTEL CORP
Description
TRANSISTOR
Related Searches:
14449-0001
TRANSISTOR
NSN, MFG P/N
5961011350706
NSN
5961-01-135-0706
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
III END ITEM IDENTIFICATION: AN/GRC-212
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-92
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.165 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
OVERALL WIDTH: 0.205 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 360.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.105 INCHES MAXIMUM
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC
Related Searches:
900-4401
TRANSISTOR
NSN, MFG P/N
5961011350706
NSN
5961-01-135-0706
MFG
TREMETRICS INC DIV OF FINNIGAN
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
III END ITEM IDENTIFICATION: AN/GRC-212
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-92
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.165 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
OVERALL WIDTH: 0.205 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 360.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.105 INCHES MAXIMUM
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC
Related Searches:
14448-0001
TRANSISTOR
NSN, MFG P/N
5961011350707
NSN
5961-01-135-0707
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
III END ITEM IDENTIFICATION: AN/GRC-212
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-92
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.165 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
OVERALL WIDTH: 0.205 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 360.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.105 INCHES MAXIMUM
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC
Related Searches:
900-4403
TRANSISTOR
NSN, MFG P/N
5961011350707
NSN
5961-01-135-0707
MFG
TREMETRICS INC DIV OF FINNIGAN
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
III END ITEM IDENTIFICATION: AN/GRC-212
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-92
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.165 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
OVERALL WIDTH: 0.205 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 360.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.105 INCHES MAXIMUM
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC
Related Searches:
4E514
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961011350713
NSN
5961-01-135-0713
MFG
M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM
Description
COMPONENT NAME AND QUANTITY: 4 SEMICONDUCTOR DEVICE DIODE
III PRECIOUS MATERIAL: SILVER
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACES SILVER
INCLOSURE MATERIAL: GLASS ALL SEMICONDUCTOR DEVICE DIODE
MOUNTING METHOD: TERMINAL ALL SEMICONDUCTOR DEVICE DIODE
OVERALL DIAMETER: 0.062 INCHES NOMINAL ALL SEMICONDUCTOR DEVICE DIODE
OVERALL LENGTH: 0.156 INCHES NOMINAL ALL SEMICONDUCTOR DEVICE DIODE
TERMINAL LENGTH: 1.281 INCHES NOMINAL ALL SEMICONDUCTOR DEVICE DIODE
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD ALL SEMICONDUCTOR DEVICE DIODE
Related Searches:
720696-27
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961011350713
NSN
5961-01-135-0713
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
COMPONENT NAME AND QUANTITY: 4 SEMICONDUCTOR DEVICE DIODE
III PRECIOUS MATERIAL: SILVER
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACES SILVER
INCLOSURE MATERIAL: GLASS ALL SEMICONDUCTOR DEVICE DIODE
MOUNTING METHOD: TERMINAL ALL SEMICONDUCTOR DEVICE DIODE
OVERALL DIAMETER: 0.062 INCHES NOMINAL ALL SEMICONDUCTOR DEVICE DIODE
OVERALL LENGTH: 0.156 INCHES NOMINAL ALL SEMICONDUCTOR DEVICE DIODE
TERMINAL LENGTH: 1.281 INCHES NOMINAL ALL SEMICONDUCTOR DEVICE DIODE
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD ALL SEMICONDUCTOR DEVICE DIODE
Related Searches:
QSCH1921
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961011350713
NSN
5961-01-135-0713
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
COMPONENT NAME AND QUANTITY: 4 SEMICONDUCTOR DEVICE DIODE
III PRECIOUS MATERIAL: SILVER
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACES SILVER
INCLOSURE MATERIAL: GLASS ALL SEMICONDUCTOR DEVICE DIODE
MOUNTING METHOD: TERMINAL ALL SEMICONDUCTOR DEVICE DIODE
OVERALL DIAMETER: 0.062 INCHES NOMINAL ALL SEMICONDUCTOR DEVICE DIODE
OVERALL LENGTH: 0.156 INCHES NOMINAL ALL SEMICONDUCTOR DEVICE DIODE
TERMINAL LENGTH: 1.281 INCHES NOMINAL ALL SEMICONDUCTOR DEVICE DIODE
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD ALL SEMICONDUCTOR DEVICE DIODE
Related Searches:
1N4370A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011350714
NSN
5961-01-135-0714
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
7538002P93
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011350714
NSN
5961-01-135-0714
7538002P93
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011350714
NSN
5961-01-135-0714
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
R610-0220XXZC
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011350715
NSN
5961-01-135-0715
R610-0220XXZC
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011350715
NSN
5961-01-135-0715
MFG
WESTINGHOUSE ELECTRIC CORP
Description
CURRENT RATING PER CHARACTERISTIC: 250.00 AMPERES NOMINAL FORWARD CURRENT, AVERAGE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 190.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
OVERALL DIAMETER: 1.210 INCHES NOMINAL
OVERALL LENGTH: 2.500 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 1.245 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 THREADED STUD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
R6100225XXZC
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011350715
NSN
5961-01-135-0715
R6100225XXZC
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011350715
NSN
5961-01-135-0715
MFG
WESTINGHOUSE ELECTRIC CORP SEMICONDUCTOR DIV
Description
CURRENT RATING PER CHARACTERISTIC: 250.00 AMPERES NOMINAL FORWARD CURRENT, AVERAGE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 190.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
OVERALL DIAMETER: 1.210 INCHES NOMINAL
OVERALL LENGTH: 2.500 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 1.245 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 THREADED STUD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
922-6131-010
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011350716
NSN
5961-01-135-0716
922-6131-010
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011350716
NSN
5961-01-135-0716
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MICROAMPERES MAXIMUM REVERSE CURRENT, INSTANTANEOUS
FUNCTION FOR WHICH DESIGNED: VARACTOR DIODE
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.094 INCHES NOMINAL
OVERALL LENGTH: 0.157 INCHES NOMINAL
OVERALL WIDTH: 0.115 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.167 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 28.0 MINIMUM REVERSE BREAKDOWN VOLTAGE, INSTANTANEOUS
Related Searches:
BB109-6131-010
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011350716
NSN
5961-01-135-0716
BB109-6131-010
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011350716
NSN
5961-01-135-0716
MFG
MICROSEMI CORP.-SCOTTSDALE DBA MICROSEMI
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MICROAMPERES MAXIMUM REVERSE CURRENT, INSTANTANEOUS
FUNCTION FOR WHICH DESIGNED: VARACTOR DIODE
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.094 INCHES NOMINAL
OVERALL LENGTH: 0.157 INCHES NOMINAL
OVERALL WIDTH: 0.115 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.167 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 28.0 MINIMUM REVERSE BREAKDOWN VOLTAGE, INSTANTANEOUS
Related Searches:
1906-0096
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011350717
NSN
5961-01-135-0717
1906-0096
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011350717
NSN
5961-01-135-0717
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 WORKING PEAK REVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
OPERATING TEMP RANGE: -55.0 TO 165.0 DEG CELSIUS
OVERALL HEIGHT: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.610 INCHES MAXIMUM
OVERALL WIDTH: 0.200 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 4 PIN
Related Searches:
MDA202
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011350717
NSN
5961-01-135-0717
MDA202
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011350717
NSN
5961-01-135-0717
MFG
FREESCALE SEMICONDUCTOR INC.
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 WORKING PEAK REVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
OPERATING TEMP RANGE: -55.0 TO 165.0 DEG CELSIUS
OVERALL HEIGHT: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.610 INCHES MAXIMUM
OVERALL WIDTH: 0.200 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 4 PIN
Related Searches:
SDA296-2
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011350717
NSN
5961-01-135-0717
SDA296-2
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011350717
NSN
5961-01-135-0717
MFG
ELECTRONIC DEVICES INC DBA E D I
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 WORKING PEAK REVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
OPERATING TEMP RANGE: -55.0 TO 165.0 DEG CELSIUS
OVERALL HEIGHT: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.610 INCHES MAXIMUM
OVERALL WIDTH: 0.200 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 4 PIN
Related Searches:
MR1125
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011350719
NSN
5961-01-135-0719
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 12.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-4
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 190.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 0.405 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.437 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 3.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 MAXIMUM REVERSE VOLTAGE, PEAK AND 350.0 MAXIMUM REVERSE VOLTAGE, TOTAL RMS
