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5961-01-142-3912
20 Products
1N5821
DIODE
NSN, MFG P/N
5961011423912
NSN
5961-01-142-3912
MFG
PRAWNTO SHRIMP MACHINE CO OF TEXAS DBA PRAWNTO SYSTEMS
Description
DIODE
Related Searches:
MP493
DIODE
NSN, MFG P/N
5961011423914
NSN
5961-01-142-3914
MFG
MCPHERSON FURNACE AND SUPPLY CO
Description
DIODE
Related Searches:
65-843
RECTIFIER,BRIDGE
NSN, MFG P/N
5961011423919
NSN
5961-01-142-3919
MFG
GE RUSKA INSTRUMENT CORPORATION DIV GE SENSING SOLUTIONS INC
Description
RECTIFIER,BRIDGE
Related Searches:
152-0335-01
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011423920
NSN
5961-01-142-3920
152-0335-01
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011423920
NSN
5961-01-142-3920
MFG
TEKTRONIX INC. DBA TEKTRONIX
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
GC20279
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011423920
NSN
5961-01-142-3920
MFG
MICROSEMI CORP-MASSACHUSETTS DBA MICROSEMI-LOWELL DIV MICROSEMI - LOWELL
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
013-13029-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011423966
NSN
5961-01-142-3966
013-13029-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011423966
NSN
5961-01-142-3966
MFG
ASTEC AMERICA INC .
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
1N4682
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011424053
NSN
5961-01-142-4053
MFG
MICROSEMI CORP.-SCOTTSDALE DBA MICROSEMI
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC AND 90.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.018 INCHES MINIMUM AND 0.022 INCHES MAXIMUM
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 2.7 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
38907-4
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961011424054
NSN
5961-01-142-4054
38907-4
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961011424054
NSN
5961-01-142-4054
MFG
TRANSISTOR DEVICES INC . DBA TDI POWER
Description
CURRENT RATING PER CHARACTERISTIC: 80.00 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL AND 50.00 AMPERES MAXIMUM ON-STATE CURRENT, AVERAGE
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: ANODE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-208AC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 1.452 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.683 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG AND 1 CASE
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
40C60B
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961011424054
NSN
5961-01-142-4054
40C60B
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961011424054
NSN
5961-01-142-4054
MFG
FMC TECHNOLOGIES INC DIV MATERIAL HANDLING SOLUTIONS
Description
CURRENT RATING PER CHARACTERISTIC: 80.00 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL AND 50.00 AMPERES MAXIMUM ON-STATE CURRENT, AVERAGE
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: ANODE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-208AC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 1.452 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.683 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG AND 1 CASE
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
50R1A60
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961011424054
NSN
5961-01-142-4054
50R1A60
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961011424054
NSN
5961-01-142-4054
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
CURRENT RATING PER CHARACTERISTIC: 80.00 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL AND 50.00 AMPERES MAXIMUM ON-STATE CURRENT, AVERAGE
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: ANODE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-208AC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 1.452 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.683 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG AND 1 CASE
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
9023025
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961011424054
NSN
5961-01-142-4054
9023025
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961011424054
NSN
5961-01-142-4054
MFG
CHLORIDE POWER PROTECTION
Description
CURRENT RATING PER CHARACTERISTIC: 80.00 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL AND 50.00 AMPERES MAXIMUM ON-STATE CURRENT, AVERAGE
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: ANODE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-208AC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 1.452 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.683 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG AND 1 CASE
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
1902-0922
DIODE
NSN, MFG P/N
5961011424663
NSN
5961-01-142-4663
MFG
AGILENT TECHNOLOGIES INC. DBA NORTH AMERICAN CONTACT CENTER DIV AGILENT BUSINESS CENTER
Description
DIODE
Related Searches:
SZP4000-135
DIODE
NSN, MFG P/N
5961011424663
NSN
5961-01-142-4663
MFG
FREESCALE SEMICONDUCTOR INC.
Description
DIODE
Related Searches:
13152729
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961011424727
NSN
5961-01-142-4727
13152729
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961011424727
NSN
5961-01-142-4727
MFG
U S ARMY AVIATION AND MISSILE COMMAND
Description
MAJOR COMPONENTS: TRANSISTOR 2,PWB 1
OVERALL HEIGHT: 0.320 INCHES NOMINAL
OVERALL LENGTH: 1.440 INCHES NOMINAL
OVERALL WIDTH: 0.630 INCHES NOMINAL
Related Searches:
720605-12
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011425708
NSN
5961-01-142-5708
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
CURRENT RATING PER CHARACTERISTIC: 250.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.385 INCHES MAXIMUM
OVERALL LENGTH: 0.640 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.900 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5000.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
MC5609
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011425708
NSN
5961-01-142-5708
MFG
MICROSEMI CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 250.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.385 INCHES MAXIMUM
OVERALL LENGTH: 0.640 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.900 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5000.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
720605-11
DIODE
NSN, MFG P/N
5961011425709
NSN
5961-01-142-5709
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
DIODE
Related Searches:
MC5608
DIODE
NSN, MFG P/N
5961011425709
NSN
5961-01-142-5709
MFG
MICROSEMI CORPORATION
Description
DIODE
Related Searches:
675-12926-601
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961011426742
NSN
5961-01-142-6742
675-12926-601
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961011426742
NSN
5961-01-142-6742
MFG
THE BOEING COMPANY DBA BOEING
Description
III END ITEM IDENTIFICATION: B52 OAS G/H
MAJOR COMPONENTS: DIODE 2; PRINTED CIRCUIT BD 1
Related Searches:
675-12927-601
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961011426743
NSN
5961-01-142-6743
675-12927-601
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961011426743
NSN
5961-01-142-6743
MFG
THE BOEING COMPANY DBA BOEING
Description
III END ITEM IDENTIFICATION: B52 OAS G/H
MAJOR COMPONENTS: DIODE 2; PRINTED CIRCUIT BD 1
