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5961-01-190-9740
20 Products
2N6420
TRANSISTOR
NSN, MFG P/N
5961011909740
NSN
5961-01-190-9740
MFG
FREESCALE SEMICONDUCTOR INC.
Description
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 UNINSULATED WIRE LEAD
Related Searches:
645507-901
TRANSISTOR
NSN, MFG P/N
5961011909740
NSN
5961-01-190-9740
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 UNINSULATED WIRE LEAD
Related Searches:
645550-901
TRANSISTOR
NSN, MFG P/N
5961011909741
NSN
5961-01-190-9741
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
III END ITEM IDENTIFICATION: AN/GRC-206
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: T.O. 31R2-2VRC83-3; N/H/A CCA 5998-01-127-4887
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
U2T205
TRANSISTOR
NSN, MFG P/N
5961011909741
NSN
5961-01-190-9741
MFG
MICRO USPD INC
Description
III END ITEM IDENTIFICATION: AN/GRC-206
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: T.O. 31R2-2VRC83-3; N/H/A CCA 5998-01-127-4887
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
646272-901
TRANSISTOR
NSN, MFG P/N
5961011909742
NSN
5961-01-190-9742
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
CURRENT RATING PER CHARACTERISTIC: 15.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
III END ITEM IDENTIFICATION: AN/GRC-206
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.340 INCHES MAXIMUM
OVERALL LENGTH: 1.111 INCHES MAXIMUM
OVERALL WIDTH: 0.700 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.360 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 PIN
TEST DATA DOCUMENT: 37695-646272 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
Related Searches:
PIC7525
TRANSISTOR
NSN, MFG P/N
5961011909742
NSN
5961-01-190-9742
MFG
MICRO USPD INC
Description
CURRENT RATING PER CHARACTERISTIC: 15.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
III END ITEM IDENTIFICATION: AN/GRC-206
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.340 INCHES MAXIMUM
OVERALL LENGTH: 1.111 INCHES MAXIMUM
OVERALL WIDTH: 0.700 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.360 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 PIN
TEST DATA DOCUMENT: 37695-646272 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
Related Searches:
583R853H03
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961011910155
NSN
5961-01-191-0155
583R853H03
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961011910155
NSN
5961-01-191-0155
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN SYSTEMS CORPORATION ELECTRONIC SYSTEMS
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 15.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 125.00 AMPERES PEAK FORWARD SURGE CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 WORKING PEAK REVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: 8 BRIDGE 3 PHASE
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: AN/ALQ-131, AIRCRAFT, B-1B, F-16
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
TERMINAL TYPE AND QUANTITY: 5 PIN
Related Searches:
990-0962-001
PARTS KIT,SEMICONDU
NSN, MFG P/N
5961011911040
NSN
5961-01-191-1040
MFG
HARRIS CORPORATION DBA HARRIS BROADCAST TRANSMISSION DIVISION DIV BROADCAST COMMUNICATIONS DIVISION
Description
PARTS KIT,SEMICONDU
Related Searches:
523792-1
SEMICONDUCTOR TRANS
NSN, MFG P/N
5961011911134
NSN
5961-01-191-1134
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
SEMICONDUCTOR TRANS
Related Searches:
7210105-002
TRANSISTOR
NSN, MFG P/N
5961011911295
NSN
5961-01-191-1295
MFG
COHU INC. DBA COHU ELECTRONICS DIVISION
Description
TRANSISTOR
Related Searches:
7210072-004
TRANSISTOR
NSN, MFG P/N
5961011911296
NSN
5961-01-191-1296
MFG
COHU INC. DBA COHU ELECTRONICS DIVISION
Description
TRANSISTOR
Related Searches:
3064189-2
TRANSISTOR
NSN, MFG P/N
5961011911297
NSN
5961-01-191-1297
MFG
INTERSTATE ELECTRONICS CORPORATION
Description
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.450 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
TEST DATA DOCUMENT: 72737-3064189 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, WITH BASE SHORT-CIRCUITED TO EMITTER AND 200.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MINIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
40SE113
TRANSISTOR
NSN, MFG P/N
5961011911297
NSN
5961-01-191-1297
MFG
SOLITRON DEVICES INC.
Description
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.450 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
TEST DATA DOCUMENT: 72737-3064189 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, WITH BASE SHORT-CIRCUITED TO EMITTER AND 200.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MINIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
1TS30662
TRANSISTOR
NSN, MFG P/N
5961011911300
NSN
5961-01-191-1300
MFG
INTERSIL INC SUB OF GENERAL ELECTRIC CO
Description
TRANSISTOR
Related Searches:
10673229-005
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011911301
NSN
5961-01-191-1301
10673229-005
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011911301
NSN
5961-01-191-1301
MFG
U S ARMY AVIATION AND MISSILE COMMAND
Description
CURRENT RATING PER CHARACTERISTIC: 25.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
DESIGN CONTROL REFERENCE: 10673229-005
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 18876
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.240 INCHES NOMINAL
OVERALL LENGTH: 0.350 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 10.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
1N3020B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011911301
NSN
5961-01-191-1301
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 25.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
DESIGN CONTROL REFERENCE: 10673229-005
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 18876
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.240 INCHES NOMINAL
OVERALL LENGTH: 0.350 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 10.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
3510036-065
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011911302
NSN
5961-01-191-1302
3510036-065
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011911302
NSN
5961-01-191-1302
MFG
COHU INC. DBA COHU ELECTRONICS DIVISION
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
3510091-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011911303
NSN
5961-01-191-1303
3510091-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011911303
NSN
5961-01-191-1303
MFG
COHU INC. DBA COHU ELECTRONICS DIVISION
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
384-0683-000
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011911304
NSN
5961-01-191-1304
384-0683-000
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011911304
NSN
5961-01-191-1304
MFG
HARRIS CORPORATION DBA HARRIS BROADCAST TRANSMISSION DIVISION DIV BROADCAST COMMUNICATIONS DIVISION
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
709665-1
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961011912922
NSN
5961-01-191-2922
709665-1
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961011912922
NSN
5961-01-191-2922
MFG
GE AVIATION SYSTEMS LLC DBA GE AVIATION DIV CUSTOMER SERVICES
Description
MATERIAL: ANY ACCEPTABLE
OVERALL HEIGHT: 0.500 INCHES NOMINAL
OVERALL LENGTH: 1.750 INCHES NOMINAL
OVERALL WIDTH: 1.120 INCHES NOMINAL
STYLE DESIGNATOR: 1C RECTANGULAR PRISM
