My Quote Request
No products added yet
5961-01-202-8522
20 Products
6096876-1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012028522
NSN
5961-01-202-8522
6096876-1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012028522
NSN
5961-01-202-8522
MFG
LOCKHEED MARTIN CORPORATION DBA MISSION SYSTEMS & SENSORS
Description
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 600.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXV2N5794
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/495
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.185 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.6 WATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/495 GOVERNMENT SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 6 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19
Related Searches:
HP13627
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012028522
NSN
5961-01-202-8522
HP13627
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012028522
NSN
5961-01-202-8522
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 600.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXV2N5794
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/495
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.185 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.6 WATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/495 GOVERNMENT SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 6 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19
Related Searches:
JANTXV2N5794
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012028522
NSN
5961-01-202-8522
JANTXV2N5794
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012028522
NSN
5961-01-202-8522
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 600.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXV2N5794
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/495
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.185 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.6 WATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/495 GOVERNMENT SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 6 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19
Related Searches:
SD1577H
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012028522
NSN
5961-01-202-8522
SD1577H
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012028522
NSN
5961-01-202-8522
MFG
FREESCALE SEMICONDUCTOR INC.
Description
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 600.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXV2N5794
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/495
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.185 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.6 WATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/495 GOVERNMENT SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 6 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19
Related Searches:
SDH1503
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012028522
NSN
5961-01-202-8522
SDH1503
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012028522
NSN
5961-01-202-8522
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 600.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXV2N5794
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/495
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.185 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.6 WATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/495 GOVERNMENT SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 6 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19
Related Searches:
1035007-1
TRANSISTOR
NSN, MFG P/N
5961012030146
NSN
5961-01-203-0146
MFG
RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON
Description
DESIGN CONTROL REFERENCE: 1035007-1
MANUFACTURERS CODE: 3B150
MOUNTING METHOD: TERMINAL AND UNTHREADED HOLE
OVERALL LENGTH: 1.500 INCHES NOMINAL
TERMINAL LENGTH: 0.455 INCHES NOMINAL
THE MANUFACTURERS DATA:
Related Searches:
40-2503601
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012031054
NSN
5961-01-203-1054
40-2503601
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012031054
NSN
5961-01-203-1054
MFG
D.W. HERCULES LLC DBA HERCULES ENGINE COMPONENTS DIV HERCULES ENGINE COMPONENTS
Description
SPECIAL FEATURES: UTILIZED ON TACTICAL WATER DISTRIBUTION SYSTEM,TM5-4320-303-24P
Related Searches:
JANTXV2N6286
TRANSISTOR
NSN, MFG P/N
5961012031176
NSN
5961-01-203-1176
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: -20.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND -0.50 AMPERES MAXIMUM BASE CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXV2N6286
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: QUALITY ASSURANCE LEVEL TXV
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: TERMINAL AND UNTHREADED HOLE
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/505
OVERALL HEIGHT: 0.360 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES NOMINAL
OVERALL WIDTH: 1.050 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 175.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/505 GOVERNMENT SPECIFICATION
TERMINAL L
Related Searches:
JANTXV2N6758
TRANSISTOR
NSN, MFG P/N
5961012031177
NSN
5961-01-203-1177
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 9.00 AMPERES MAXIMUM DRAIN CURRENT AND 8.00 AMPERES MAXIMUM OFF-STATE CURRENT, PEAK
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXV2N6758
FEATURES PROVIDED: QUALITY ASSURANCE LEVEL TXV
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: TERMINAL AND UNTHREADED HOLE
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/542
OVERALL HEIGHT: 0.380 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES NOMINAL
OVERALL WIDTH: 1.050 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 75.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-M
Related Searches:
106418
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012031178
NSN
5961-01-203-1178
MFG
LOCKHEED MARTIN SIPPICAN INC. DIV LOCKHEED MARTIN MARION USE CAGE CODE 16848 FOR CATALOGING.
Description
CURRENT RATING PER CHARACTERISTIC: 333.00 MILLIAMPERES MAXIMUM AVERAGE ON-STATE CURRENT, 180 DEGREES CONDUCTION ANGLE, AVERAGE OVER A FULL 60-HZ CYCLE
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXV1N4247
FEATURES PROVIDED: QUALITY ASSURANCE LEVEL TXV
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/286
OVERALL DIAMETER: 0.150 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-195001286 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS AND 600.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK T
Related Searches:
JANTXV1N4247
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012031178
NSN
5961-01-203-1178
JANTXV1N4247
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012031178
NSN
5961-01-203-1178
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 333.00 MILLIAMPERES MAXIMUM AVERAGE ON-STATE CURRENT, 180 DEGREES CONDUCTION ANGLE, AVERAGE OVER A FULL 60-HZ CYCLE
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXV1N4247
FEATURES PROVIDED: QUALITY ASSURANCE LEVEL TXV
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/286
OVERALL DIAMETER: 0.150 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-195001286 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS AND 600.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK T
Related Searches:
JANTXV1N759A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012031179
NSN
5961-01-203-1179
JANTXV1N759A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012031179
NSN
5961-01-203-1179
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXV1N759A
FEATURES PROVIDED: QUALITY ASSURANCE LEVEL TXV
FUNCTION FOR WHICH DESIGNED: VOLTAGE REGULATOR
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/127
OVERALL DIAMETER: 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/127 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
JANTXV1N5314
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012031180
NSN
5961-01-203-1180
JANTXV1N5314
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012031180
NSN
5961-01-203-1180
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 5.17 MILLIAMPERES MAXIMUM PEAK POINT CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXV1N5314
FEATURES PROVIDED: QUALITY ASSURANCE LEVEL TXV
FUNCTION FOR WHICH DESIGNED: CURRENT REGULATOR
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/463
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 600.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/463 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MAXIMUM REGULATOR VOLTAGE
Related Searches:
200612-001
TRANSISTOR
NSN, MFG P/N
5961012031315
NSN
5961-01-203-1315
MFG
PHYSIO-CONTROL INC .
Description
TRANSISTOR
Related Searches:
READINESS SPARE PART ITEM
TRANSISTOR
NSN, MFG P/N
5961012031315
NSN
5961-01-203-1315
MFG
DEFENSE LOGISTICS AGENCY DIRECTORATE OF MEDICAL MATERIEL DEFENSE SUPPLY CENTER PHILADELPHIA
Description
TRANSISTOR
Related Searches:
200781-000
TRANSISTOR
NSN, MFG P/N
5961012031316
NSN
5961-01-203-1316
MFG
PHYSIO-CONTROL INC .
Description
TRANSISTOR
Related Searches:
READINESS SPARE PART ITEM
TRANSISTOR
NSN, MFG P/N
5961012031316
NSN
5961-01-203-1316
MFG
DEFENSE LOGISTICS AGENCY DIRECTORATE OF MEDICAL MATERIEL DEFENSE SUPPLY CENTER PHILADELPHIA
Description
TRANSISTOR
Related Searches:
801172-00
TRANSISTOR
NSN, MFG P/N
5961012031317
NSN
5961-01-203-1317
MFG
PHYSIO-CONTROL INC .
Description
TRANSISTOR
Related Searches:
READINESS SPARE PART ITEM
TRANSISTOR
NSN, MFG P/N
5961012031317
NSN
5961-01-203-1317
MFG
DEFENSE LOGISTICS AGENCY DIRECTORATE OF MEDICAL MATERIEL DEFENSE SUPPLY CENTER PHILADELPHIA
Description
TRANSISTOR
Related Searches:
801559-01
TRANSISTOR
NSN, MFG P/N
5961012031318
NSN
5961-01-203-1318
MFG
PHYSIO-CONTROL INC .
Description
TRANSISTOR
