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5961-01-298-5010
20 Products
A3012737-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012985010
NSN
5961-01-298-5010
A3012737-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012985010
NSN
5961-01-298-5010
MFG
US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
393814
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012983474
NSN
5961-01-298-3474
MFG
BRIGGS AND STRATTON CORP
Description
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
AW08G
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012983508
NSN
5961-01-298-3508
AW08G
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012983508
NSN
5961-01-298-3508
MFG
GENERAL INSTRUMENT CORP DEFENSE SYSTEMS GROUP
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 REPETITIVE PEAK REVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: KJM327A
MANUFACTURERS CODE: 3BUT6
MATERIAL: SILICON
MOUNTING METHOD: TERMINAL
OPERATING TEMP RANGE: -50.0 TO 125.0 DEG CELSIUS
OVERALL DIAMETER: 0.340 INCHES NOMINAL
OVERALL LENGTH: 0.190 INCHES NOMINAL
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: REFERENCE NUMBER DIFFERENTIATING MATERIAL WILL BE IAW NAVAL INVENTORY CONTROL POINT ACTIVITY HX QUALITY CONTROL,MANUFACTURING AND TESTING SPECIFICATIONS AVAILABLE AT THE DLA ICP
SPECIAL FEATURES: ITEM MUST COMPLY WITH REQUIREMENTS OF DEFENSE SUPPLY CENTER COLUMBUS PRODUCTION STANDARD L04077; FOR NAVY IRPOD ONLY
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA: _
Related Searches:
KJM327A
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012983508
NSN
5961-01-298-3508
KJM327A
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012983508
NSN
5961-01-298-3508
MFG
DRS TECHNOLOGIES INC DBA D R S POWER & CONTROL TECHNOLOGIES INC
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 REPETITIVE PEAK REVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: KJM327A
MANUFACTURERS CODE: 3BUT6
MATERIAL: SILICON
MOUNTING METHOD: TERMINAL
OPERATING TEMP RANGE: -50.0 TO 125.0 DEG CELSIUS
OVERALL DIAMETER: 0.340 INCHES NOMINAL
OVERALL LENGTH: 0.190 INCHES NOMINAL
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: REFERENCE NUMBER DIFFERENTIATING MATERIAL WILL BE IAW NAVAL INVENTORY CONTROL POINT ACTIVITY HX QUALITY CONTROL,MANUFACTURING AND TESTING SPECIFICATIONS AVAILABLE AT THE DLA ICP
SPECIAL FEATURES: ITEM MUST COMPLY WITH REQUIREMENTS OF DEFENSE SUPPLY CENTER COLUMBUS PRODUCTION STANDARD L04077; FOR NAVY IRPOD ONLY
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA: _
Related Searches:
LO4077
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012983508
NSN
5961-01-298-3508
LO4077
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012983508
NSN
5961-01-298-3508
MFG
DLA LAND AND MARITIME
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 REPETITIVE PEAK REVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: KJM327A
MANUFACTURERS CODE: 3BUT6
MATERIAL: SILICON
MOUNTING METHOD: TERMINAL
OPERATING TEMP RANGE: -50.0 TO 125.0 DEG CELSIUS
OVERALL DIAMETER: 0.340 INCHES NOMINAL
OVERALL LENGTH: 0.190 INCHES NOMINAL
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: REFERENCE NUMBER DIFFERENTIATING MATERIAL WILL BE IAW NAVAL INVENTORY CONTROL POINT ACTIVITY HX QUALITY CONTROL,MANUFACTURING AND TESTING SPECIFICATIONS AVAILABLE AT THE DLA ICP
SPECIAL FEATURES: ITEM MUST COMPLY WITH REQUIREMENTS OF DEFENSE SUPPLY CENTER COLUMBUS PRODUCTION STANDARD L04077; FOR NAVY IRPOD ONLY
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA: _
Related Searches:
VE87
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012983508
NSN
5961-01-298-3508
VE87
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012983508
NSN
5961-01-298-3508
MFG
MICRO QUALITY SEMICONDUCTOR INC SUB OF MICROSEMI CORP
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 REPETITIVE PEAK REVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: KJM327A
MANUFACTURERS CODE: 3BUT6
MATERIAL: SILICON
MOUNTING METHOD: TERMINAL
OPERATING TEMP RANGE: -50.0 TO 125.0 DEG CELSIUS
OVERALL DIAMETER: 0.340 INCHES NOMINAL
OVERALL LENGTH: 0.190 INCHES NOMINAL
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: REFERENCE NUMBER DIFFERENTIATING MATERIAL WILL BE IAW NAVAL INVENTORY CONTROL POINT ACTIVITY HX QUALITY CONTROL,MANUFACTURING AND TESTING SPECIFICATIONS AVAILABLE AT THE DLA ICP
SPECIAL FEATURES: ITEM MUST COMPLY WITH REQUIREMENTS OF DEFENSE SUPPLY CENTER COLUMBUS PRODUCTION STANDARD L04077; FOR NAVY IRPOD ONLY
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA: _
Related Searches:
BUW81A
TRANSISTOR
NSN, MFG P/N
5961012983902
NSN
5961-01-298-3902
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
TRANSISTOR
Related Searches:
032-210
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012983903
NSN
5961-01-298-3903
MFG
MILLER ELECTRIC MFG CO
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
028-351
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012983904
NSN
5961-01-298-3904
MFG
MILLER ELECTRIC MFG CO
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
211958
TRANSISTOR
NSN, MFG P/N
5961012983937
NSN
5961-01-298-3937
MFG
FLUKE CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MICROAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, WITH BASE SHORT-CIRCUITED TO EMITTER
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-126
SEMICONDUCTOR MATERIAL: SILICON ALLOY
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 22.0 MINIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 22.0 MINIMUM COLLECTOR-TO-EMITTER, SUBSTAINING VOLTAGE, BASE OPEN-CIRCUITED AND 5.0 MINIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN AND 0.5 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC AND
~1: 1.1 MAXIMUM BASE TO EMITTER SATURATION VOLTAGE
Related Searches:
4822 130 40982
TRANSISTOR
NSN, MFG P/N
5961012983937
NSN
5961-01-298-3937
MFG
PHILIPS ELECTRONICS NEDERLAND BV
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MICROAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, WITH BASE SHORT-CIRCUITED TO EMITTER
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-126
SEMICONDUCTOR MATERIAL: SILICON ALLOY
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 22.0 MINIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 22.0 MINIMUM COLLECTOR-TO-EMITTER, SUBSTAINING VOLTAGE, BASE OPEN-CIRCUITED AND 5.0 MINIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN AND 0.5 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC AND
~1: 1.1 MAXIMUM BASE TO EMITTER SATURATION VOLTAGE
Related Searches:
BD433
TRANSISTOR
NSN, MFG P/N
5961012983937
NSN
5961-01-298-3937
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MICROAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, WITH BASE SHORT-CIRCUITED TO EMITTER
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-126
SEMICONDUCTOR MATERIAL: SILICON ALLOY
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 22.0 MINIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 22.0 MINIMUM COLLECTOR-TO-EMITTER, SUBSTAINING VOLTAGE, BASE OPEN-CIRCUITED AND 5.0 MINIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN AND 0.5 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC AND
~1: 1.1 MAXIMUM BASE TO EMITTER SATURATION VOLTAGE
Related Searches:
MJ12021
TRANSISTOR
NSN, MFG P/N
5961012984383
NSN
5961-01-298-4383
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 8.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 2.50 MILLIAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, EMITTER OPEN
III END ITEM IDENTIFICATION: RADAR SET AN/FPS-115
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-204AA
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.275 INCHES NOMINAL
OVERALL LENGTH: 1.563 INCHES MAXIMUM
OVERALL WIDTH: 0.820 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 150.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 1 CASE AND 2 PIN
TRANSFER RATIO: 5.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 450.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/S
Related Searches:
ST-12021
TRANSISTOR
NSN, MFG P/N
5961012984383
NSN
5961-01-298-4383
MFG
SEMICONDUCTOR TECHNOLOGY INC DBA S T I
Description
CURRENT RATING PER CHARACTERISTIC: 8.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 2.50 MILLIAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, EMITTER OPEN
III END ITEM IDENTIFICATION: RADAR SET AN/FPS-115
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-204AA
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.275 INCHES NOMINAL
OVERALL LENGTH: 1.563 INCHES MAXIMUM
OVERALL WIDTH: 0.820 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 150.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 1 CASE AND 2 PIN
TRANSFER RATIO: 5.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 450.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/S
Related Searches:
STX12021
TRANSISTOR
NSN, MFG P/N
5961012984383
NSN
5961-01-298-4383
MFG
SOLID STATE DEVICES INC.
Description
CURRENT RATING PER CHARACTERISTIC: 8.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 2.50 MILLIAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, EMITTER OPEN
III END ITEM IDENTIFICATION: RADAR SET AN/FPS-115
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-204AA
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.275 INCHES NOMINAL
OVERALL LENGTH: 1.563 INCHES MAXIMUM
OVERALL WIDTH: 0.820 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 150.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 1 CASE AND 2 PIN
TRANSFER RATIO: 5.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 450.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/S
Related Searches:
KBPC3506W
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012984414
NSN
5961-01-298-4414
KBPC3506W
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012984414
NSN
5961-01-298-4414
MFG
GENERAL INSTRUMENT CORP CORPORATE HEADQUARTERS
Description
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 420.0 REVERSE VOLTAGE, TOTAL RMS AND 600.0 REPETITIVE PEAK REVERSE VOLTAGE
OVERALL LENGTH: 1.120 INCHES MINIMUM AND 1.130 INCHES MAXIMUM
OVERALL WIDTH: 1.120 INCHES MINIMUM AND 1.130 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
Related Searches:
48-P03630R002
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012984486
NSN
5961-01-298-4486
48-P03630R002
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012984486
NSN
5961-01-298-4486
MFG
GENERAL DYNAMICS C4 SYSTEMS INC.
Description
SPECIAL FEATURES: USED ON HIGH POWER ASSEMBLY
Related Searches:
BYI-3F
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012984486
NSN
5961-01-298-4486
MFG
VARIAN ASSOCIATES INC COMMUNICATIONS TRANSISTOR DIV
Description
SPECIAL FEATURES: USED ON HIGH POWER ASSEMBLY
Related Searches:
A3012693-1
TRANSISTOR
NSN, MFG P/N
5961012985007
NSN
5961-01-298-5007
MFG
US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR
Description
TRANSISTOR
Related Searches:
5030168
TRANSISTOR
NSN, MFG P/N
5961012985009
NSN
5961-01-298-5009
MFG
US ARMY COMBAT SURVEILLANCE AND TARGET ACQUISITION LABORATORY
Description
TRANSISTOR
