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5961-01-064-2504
20 Products
167074
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010642504
NSN
5961-01-064-2504
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DBA NORTHROP GRMMAN NORDEN SYSTEMS DIV NAVAL AND MARINE SYSTEMS DIVISION
Description
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 1.730 INCHES MINIMUM AND 1.930 INCHES MAXIMUM
OVERALL LENGTH: 1.150 INCHES MINIMUM AND 1.170 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 35.0 MAXIMUM BREAKDOWN VOLTAGE, DC
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9971
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010642259
NSN
5961-01-064-2259
MFG
HARRIS CORPORATION DIV MICROWAVE COMMUNICATION DIVISION
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
HP2826
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010642259
NSN
5961-01-064-2259
MFG
HEWLETT PACKARD CO
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
HP5082-2826
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010642259
NSN
5961-01-064-2259
HP5082-2826
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010642259
NSN
5961-01-064-2259
MFG
HEWLETT-PACKARD LTD
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
PC71585-1
TRANSISTOR
NSN, MFG P/N
5961010642499
NSN
5961-01-064-2499
MFG
DANISH AEROTECH A/S USE R3504
Description
DESIGN CONTROL REFERENCE: YY0056
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3
MANUFACTURERS CODE: 21845
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
OVERALL HEIGHT: 0.250 INCHES MINIMUM AND 0.450 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.312 INCHES MINIMUM AND 0.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
YY0056
TRANSISTOR
NSN, MFG P/N
5961010642499
NSN
5961-01-064-2499
MFG
SOLITRON DEVICES INC.
Description
DESIGN CONTROL REFERENCE: YY0056
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3
MANUFACTURERS CODE: 21845
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
OVERALL HEIGHT: 0.250 INCHES MINIMUM AND 0.450 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.312 INCHES MINIMUM AND 0.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
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1133344G1
TRANSISTOR
NSN, MFG P/N
5961010642500
NSN
5961-01-064-2500
MFG
ITT CORPORATION DBA ITT COMMUNICATIONS SYSTEMS
Description
III END ITEM IDENTIFICATION: AN/GSQ-120
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
OVERALL HEIGHT: 0.155 INCHES MINIMUM AND 0.165 INCHES MAXIMUM
OVERALL LENGTH: 0.790 INCHES MINIMUM AND 0.810 INCHES MAXIMUM
OVERALL WIDTH: 0.220 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: T.O. 31R2-2GRC199-4; JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 SOLDER STUD
Related Searches:
CTC-3003
TRANSISTOR
NSN, MFG P/N
5961010642500
NSN
5961-01-064-2500
MFG
VARIAN ASSOCIATES INC COMMUNICATIONS TRANSISTOR DIV
Description
III END ITEM IDENTIFICATION: AN/GSQ-120
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
OVERALL HEIGHT: 0.155 INCHES MINIMUM AND 0.165 INCHES MAXIMUM
OVERALL LENGTH: 0.790 INCHES MINIMUM AND 0.810 INCHES MAXIMUM
OVERALL WIDTH: 0.220 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: T.O. 31R2-2GRC199-4; JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 SOLDER STUD
Related Searches:
MSC-3003
TRANSISTOR
NSN, MFG P/N
5961010642500
NSN
5961-01-064-2500
MFG
MICROWAVE SEMICONDUCTOR CORP
Description
III END ITEM IDENTIFICATION: AN/GSQ-120
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
OVERALL HEIGHT: 0.155 INCHES MINIMUM AND 0.165 INCHES MAXIMUM
OVERALL LENGTH: 0.790 INCHES MINIMUM AND 0.810 INCHES MAXIMUM
OVERALL WIDTH: 0.220 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: T.O. 31R2-2GRC199-4; JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 SOLDER STUD
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1-5KE33A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010642501
NSN
5961-01-064-2501
MFG
GENERAL SEMICONDUCTOR INDUSTRIES INC
Description
CURRENT RATING PER CHARACTERISTIC: 33.00 AMPERES MAXIMUM PEAK PULSE CURRENT
FUNCTION FOR WHICH DESIGNED: TRANSIENT SUPPRESSOR
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.190 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
OVERALL LENGTH: 0.360 INCHES MINIMUM AND 0.375 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: 5.0 STEADY STATE POWER DISSIPATION
TERMINAL LENGTH: 1.1000 INCHES MINIMUM
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1.5KE33A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010642501
NSN
5961-01-064-2501
MFG
PROTEK DEVICES LP DBA PROTEK DEVICES
Description
CURRENT RATING PER CHARACTERISTIC: 33.00 AMPERES MAXIMUM PEAK PULSE CURRENT
FUNCTION FOR WHICH DESIGNED: TRANSIENT SUPPRESSOR
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.190 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
OVERALL LENGTH: 0.360 INCHES MINIMUM AND 0.375 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: 5.0 STEADY STATE POWER DISSIPATION
TERMINAL LENGTH: 1.1000 INCHES MINIMUM
Related Searches:
972124-0001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010642502
NSN
5961-01-064-2502
972124-0001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010642502
NSN
5961-01-064-2502
MFG
RAYTHEON COMPANY
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: D0-5YARIATION
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL DIAMETER: 0.667 INCHES MINIMUM AND 0.687 INCHES MAXIMUM
OVERALL LENGTH: 0.450 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
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D2540FR
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010642502
NSN
5961-01-064-2502
MFG
INTERSIL CORPORATION
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: D0-5YARIATION
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL DIAMETER: 0.667 INCHES MINIMUM AND 0.687 INCHES MAXIMUM
OVERALL LENGTH: 0.450 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
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MR861R
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010642502
NSN
5961-01-064-2502
MFG
FREESCALE SEMICONDUCTOR INC.
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: D0-5YARIATION
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL DIAMETER: 0.667 INCHES MINIMUM AND 0.687 INCHES MAXIMUM
OVERALL LENGTH: 0.450 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
Related Searches:
UTG-1529
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010642502
NSN
5961-01-064-2502
MFG
MICRO USPD INC
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: D0-5YARIATION
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL DIAMETER: 0.667 INCHES MINIMUM AND 0.687 INCHES MAXIMUM
OVERALL LENGTH: 0.450 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
Related Searches:
41158-009-00-5
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010642504
NSN
5961-01-064-2504
41158-009-00-5
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010642504
NSN
5961-01-064-2504
MFG
BRITISH AEROSPACE DEFENCE SYSTEMS LT D T/A BAE SYSTEMS
Description
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 1.730 INCHES MINIMUM AND 1.930 INCHES MAXIMUM
OVERALL LENGTH: 1.150 INCHES MINIMUM AND 1.170 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 35.0 MAXIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
479-1350-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010642504
NSN
5961-01-064-2504
479-1350-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010642504
NSN
5961-01-064-2504
MFG
BOEING COMPANY THE DBA BOEING DIV DEFENSE SPACE & SECURITY - NETWORK & SPACE SYSTEMS
Description
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 1.730 INCHES MINIMUM AND 1.930 INCHES MAXIMUM
OVERALL LENGTH: 1.150 INCHES MINIMUM AND 1.170 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 35.0 MAXIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
5082-3188
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010642504
NSN
5961-01-064-2504
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 1.730 INCHES MINIMUM AND 1.930 INCHES MAXIMUM
OVERALL LENGTH: 1.150 INCHES MINIMUM AND 1.170 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 35.0 MAXIMUM BREAKDOWN VOLTAGE, DC
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5800583-926201.125
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010642504
NSN
5961-01-064-2504
5800583-926201.125
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010642504
NSN
5961-01-064-2504
MFG
EADS DEUTSCHLAND GMBH DEFENCE ELECTR ONICS ABTEILUNG VELB6
Description
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 1.730 INCHES MINIMUM AND 1.930 INCHES MAXIMUM
OVERALL LENGTH: 1.150 INCHES MINIMUM AND 1.170 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 35.0 MAXIMUM BREAKDOWN VOLTAGE, DC
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616196-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010642504
NSN
5961-01-064-2504
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 1.730 INCHES MINIMUM AND 1.930 INCHES MAXIMUM
OVERALL LENGTH: 1.150 INCHES MINIMUM AND 1.170 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 35.0 MAXIMUM BREAKDOWN VOLTAGE, DC
