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5961-01-210-1183
20 Products
6010398-003
TRANSISTOR
NSN, MFG P/N
5961012101183
NSN
5961-01-210-1183
MFG
BAE SYSTEMS NATIONAL SECURITY SOLUTIONS INC.
Description
TRANSISTOR
Related Searches:
V10297
TRANSISTOR
NSN, MFG P/N
5961012101183
NSN
5961-01-210-1183
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
TRANSISTOR
Related Searches:
SCBH6
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012101187
NSN
5961-01-210-1187
SCBH6
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012101187
NSN
5961-01-210-1187
MFG
SEMTECH CORPUS CHRISTI.A. DE C.V. REYNOSA FACILITY
Description
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: TICONDEROGA CLASS CG (47), MISSILE, TOMAHAWK, REGENCY NET SYSTEM (AN/TRC-179 (V),AN/FRC-180(V),AN/GRC-215), ARLEIGH BURKE CLASS DDG, SPRUANCE CLASS DD (963)
MATERIAL: SILICON
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.500 INCHES NOMINAL
OVERALL LENGTH: 0.750 INCHES NOMINAL
OVERALL WIDTH: 0.750 INCHES NOMINAL
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
Related Searches:
195-16
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012101785
NSN
5961-01-210-1785
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 0.05 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT AND 8.50 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
OVERALL DIAMETER: 0.140 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: HARDNESS CRITICAL PROCESS; JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 00167-938D392 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 47.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
69-7404
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012101785
NSN
5961-01-210-1785
MFG
SEMICON COMPONENTS INC
Description
CURRENT RATING PER CHARACTERISTIC: 0.05 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT AND 8.50 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
OVERALL DIAMETER: 0.140 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: HARDNESS CRITICAL PROCESS; JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 00167-938D392 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 47.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
938D392-16
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012101785
NSN
5961-01-210-1785
938D392-16
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012101785
NSN
5961-01-210-1785
MFG
HAMILTON SUNDSTRAND CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 0.05 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT AND 8.50 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
OVERALL DIAMETER: 0.140 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: HARDNESS CRITICAL PROCESS; JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 00167-938D392 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 47.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
CD32473
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012101785
NSN
5961-01-210-1785
MFG
TELCOM SEMICONDUCTOR INC
Description
CURRENT RATING PER CHARACTERISTIC: 0.05 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT AND 8.50 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
OVERALL DIAMETER: 0.140 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: HARDNESS CRITICAL PROCESS; JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 00167-938D392 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 47.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
DZ721214R
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012101785
NSN
5961-01-210-1785
MFG
MICROSEMI CORP.-SCOTTSDALE DBA MICROSEMI
Description
CURRENT RATING PER CHARACTERISTIC: 0.05 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT AND 8.50 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
OVERALL DIAMETER: 0.140 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: HARDNESS CRITICAL PROCESS; JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 00167-938D392 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 47.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
G4336
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012101785
NSN
5961-01-210-1785
MFG
N A P SMD TECHNOLOGY INC
Description
CURRENT RATING PER CHARACTERISTIC: 0.05 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT AND 8.50 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
OVERALL DIAMETER: 0.140 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: HARDNESS CRITICAL PROCESS; JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 00167-938D392 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 47.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
1N5828
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012101786
NSN
5961-01-210-1786
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 18.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: LEAD FINISH GOLD
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 1.253 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.437 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 40.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE AND 48.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
810AS2482
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012101786
NSN
5961-01-210-1786
MFG
NAVAL AIR SYSTEMS COMMAND
Description
CURRENT RATING PER CHARACTERISTIC: 18.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: LEAD FINISH GOLD
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 1.253 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.437 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 40.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE AND 48.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
1901-0463
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012101787
NSN
5961-01-210-1787
MFG
HEWLETT PACKARD CO
Description
(NON-CORE DATA) UNPACKAGED UNIT WEIGHT: 0.2 GRAMS
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
Related Searches:
1N4156
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012101787
NSN
5961-01-210-1787
MFG
MICRO USPD INC
Description
(NON-CORE DATA) UNPACKAGED UNIT WEIGHT: 0.2 GRAMS
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
Related Searches:
720649-2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012101787
NSN
5961-01-210-1787
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
(NON-CORE DATA) UNPACKAGED UNIT WEIGHT: 0.2 GRAMS
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
Related Searches:
149011-0004
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012101788
NSN
5961-01-210-1788
149011-0004
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012101788
NSN
5961-01-210-1788
MFG
UNISON INDUSTRIES LLC
Description
CURRENT RATING PER CHARACTERISTIC: 70.00 AMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-5
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 1.438 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.677 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 150.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
UES803R
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012101788
NSN
5961-01-210-1788
MFG
MICRO USPD INC
Description
CURRENT RATING PER CHARACTERISTIC: 70.00 AMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-5
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 1.438 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.677 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 150.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
JAN1N5527B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012101789
NSN
5961-01-210-1789
JAN1N5527B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012101789
NSN
5961-01-210-1789
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N5527B
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-14
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/437
OVERALL DIAMETER: 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/437 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 7.5 MAXIMUM NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0_!!
Related Searches:
GEBR-600
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012102513
NSN
5961-01-210-2513
MFG
GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT POWER COMPONENTS OPN
Description
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: SINGLE PHASE BRIDGE RECTIFIER;600 PRV;1.5 AMP
Related Searches:
11436907
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012102668
NSN
5961-01-210-2668
MFG
U S ARMY AVIATION AND MISSILE COMMAND
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE
DESIGN CONTROL REFERENCE: 11436907
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 18876
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 1.453 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.667 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THE MANUFACTURERS DATA:
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
80-6922
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012102668
NSN
5961-01-210-2668
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE
DESIGN CONTROL REFERENCE: 11436907
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 18876
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 1.453 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.667 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THE MANUFACTURERS DATA:
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 MAXIMUM REVERSE VOLTAGE, PEAK
