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5961-01-255-0064
20 Products
200-4123
TRANSISTOR
NSN, MFG P/N
5961012550064
NSN
5961-01-255-0064
MFG
DDC-PERTEC
Description
TRANSISTOR
Related Searches:
200-4125
TRANSISTOR
NSN, MFG P/N
5961012550065
NSN
5961-01-255-0065
MFG
DDC-PERTEC
Description
TRANSISTOR
Related Searches:
200-4348
TRANSISTOR
NSN, MFG P/N
5961012550066
NSN
5961-01-255-0066
MFG
DIGITAL DEVELOPMENT CORP
Description
TRANSISTOR
Related Searches:
200-5321
TRANSISTOR
NSN, MFG P/N
5961012550067
NSN
5961-01-255-0067
MFG
DDC-PERTEC
Description
TRANSISTOR
Related Searches:
200-6058
TRANSISTOR
NSN, MFG P/N
5961012550069
NSN
5961-01-255-0069
MFG
DIGITAL DEVELOPMENT CORP
Description
TRANSISTOR
Related Searches:
200-6306
TRANSISTOR
NSN, MFG P/N
5961012550070
NSN
5961-01-255-0070
MFG
DIGITAL DEVELOPMENT CORP
Description
TRANSISTOR
Related Searches:
204-0074
TRANSISTOR
NSN, MFG P/N
5961012550071
NSN
5961-01-255-0071
MFG
DIGITAL DEVELOPMENT CORP
Description
TRANSISTOR
Related Searches:
300-8810
TRANSISTOR
NSN, MFG P/N
5961012550072
NSN
5961-01-255-0072
MFG
DIGITAL DEVELOPMENT CORP
Description
TRANSISTOR
Related Searches:
300-4002
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012550073
NSN
5961-01-255-0073
MFG
DIGITAL DEVELOPMENT CORP
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
300-4446
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012550074
NSN
5961-01-255-0074
MFG
DIGITAL DEVELOPMENT CORP
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
320-3520
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012550075
NSN
5961-01-255-0075
MFG
DIGITAL DEVELOPMENT CORP
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
2N6715
TRANSISTOR
NSN, MFG P/N
5961012550302
NSN
5961-01-255-0302
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 165.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: TERMINAL AND UNTHREADED HOLE
OVERALL HEIGHT: 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.285 INCHES NOMINAL
OVERALL WIDTH: 0.205 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 2.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
1666053
TRANSISTOR
NSN, MFG P/N
5961012550303
NSN
5961-01-255-0303
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
CURRENT RATING PER CHARACTERISTIC: 800.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-5
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 800.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TRANSFER RATIO: 50.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 75.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 40.0 MAXIMUM BREAKDOWN VO
Related Searches:
ST-8085
TRANSISTOR
NSN, MFG P/N
5961012550303
NSN
5961-01-255-0303
MFG
SEMICONDUCTOR TECHNOLOGY INC DBA S T I
Description
CURRENT RATING PER CHARACTERISTIC: 800.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-5
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 800.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TRANSFER RATIO: 50.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 75.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 40.0 MAXIMUM BREAKDOWN VO
Related Searches:
ME200605
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961012550426
NSN
5961-01-255-0426
ME200605
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961012550426
NSN
5961-01-255-0426
MFG
WESTINGHOUSE ELECTRIC CORP SEMICONDUCTOR DIV
Description
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 REPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
MATERIAL: GLASS
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -40.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 1.004 INCHES NOMINAL
OVERALL LENGTH: 3.150 INCHES NOMINAL
OVERALL WIDTH: 1.574 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 5 TAB, SOLDER LUG
Related Searches:
15-09525-00
TRANSISTOR
NSN, MFG P/N
5961012550678
NSN
5961-01-255-0678
MFG
COMPAQ FEDERAL LLC
Description
TRANSISTOR
Related Searches:
15-10706-01
TRANSISTOR
NSN, MFG P/N
5961012550680
NSN
5961-01-255-0680
MFG
COMPAQ FEDERAL LLC
Description
TRANSISTOR
Related Searches:
15-10707-00
TRANSISTOR
NSN, MFG P/N
5961012550681
NSN
5961-01-255-0681
MFG
COMPAQ FEDERAL LLC
Description
TRANSISTOR
Related Searches:
FBML119
TRANSISTOR
NSN, MFG P/N
5961012550682
NSN
5961-01-255-0682
MFG
VEECO INSTRUMENTS INC LAMBDA DIV
Description
TRANSISTOR
Related Searches:
11-17721-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012550683
NSN
5961-01-255-0683
11-17721-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012550683
NSN
5961-01-255-0683
MFG
COMPAQ FEDERAL LLC
Description
SEMICONDUCTOR DEVICE,DIODE
