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5961-01-285-5403
20 Products
19A134340P3
TRANSISTOR
NSN, MFG P/N
5961012855403
NSN
5961-01-285-5403
MFG
GENERAL ELECTRIC CO MOBILE COMMUNICATIONS BUSINESS DIV
Description
TRANSISTOR
Related Searches:
19A134340P4
TRANSISTOR
NSN, MFG P/N
5961012855404
NSN
5961-01-285-5404
MFG
GENERAL ELECTRIC CO MOBILE COMMUNICATIONS BUSINESS DIV
Description
TRANSISTOR
Related Searches:
19A134387P1
TRANSISTOR
NSN, MFG P/N
5961012855405
NSN
5961-01-285-5405
MFG
GENERAL ELECTRIC CO MOBILE COMMUNICATIONS BUSINESS DIV
Description
TRANSISTOR
Related Searches:
19A134402P1
TRANSISTOR
NSN, MFG P/N
5961012855406
NSN
5961-01-285-5406
MFG
GENERAL ELECTRIC CO MOBILE COMMUNICATIONS BUSINESS DIV
Description
TRANSISTOR
Related Searches:
19B226050G1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012855407
NSN
5961-01-285-5407
19B226050G1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012855407
NSN
5961-01-285-5407
MFG
GENERAL ELECTRIC CO MOBILE COMMUNICATIONS BUSINESS DIV
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
19B219800G11
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012855408
NSN
5961-01-285-5408
19B219800G11
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012855408
NSN
5961-01-285-5408
MFG
GENERAL ELECTRIC CO MOBILE COMMUNICATIONS BUSINESS DIV
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
19A134354P8
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012855409
NSN
5961-01-285-5409
19A134354P8
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012855409
NSN
5961-01-285-5409
MFG
GENERAL ELECTRIC CO MOBILE COMMUNICATIONS BUSINESS DIV
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
JANTXV2N2880
TRANSISTOR
NSN, MFG P/N
5961012856683
NSN
5961-01-285-6683
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM COLLECTOR CURRENT, INSTANTANEOUS
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXV2N2880
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: QUALITY ASSURANCE LEVEL TXV
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/315
OVERALL LENGTH: 0.970 INCHES MINIMUM AND 1.218 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.423 INCHES MINIMUM AND 0.438 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 2.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/315 GOVERNMENT SPECIF
Related Searches:
JANTX1N4615-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012856684
NSN
5961-01-285-6684
JANTX1N4615-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012856684
NSN
5961-01-285-6684
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 8.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N4615-1
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND QUALITY ASSURANCE LEVEL TX
FUNCTION FOR WHICH DESIGNED: VOLTAGE REGULATOR
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/435
OVERALL DIAMETER: 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/435 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 2.0 NOMINAL BREA
Related Searches:
6011483-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012856685
NSN
5961-01-285-6685
6011483-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012856685
NSN
5961-01-285-6685
MFG
BAE SYSTEMS NATIONAL SECURITY SOLUTIONS INC.
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE AND GOLD PLATED LEADS
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACES GOLD
INCLOSURE MATERIAL: CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.068 INCHES MINIMUM AND 0.076 INCHES MAXIMUM
OVERALL LENGTH: 0.150 INCHES MINIMUM AND 0.175 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 0.4 MAXIMUM FORWARD VOLTAGE, DC
Related Searches:
AI4562-91
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012856685
NSN
5961-01-285-6685
MFG
SKYWORKS SOLUTIONS INC.
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE AND GOLD PLATED LEADS
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACES GOLD
INCLOSURE MATERIAL: CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.068 INCHES MINIMUM AND 0.076 INCHES MAXIMUM
OVERALL LENGTH: 0.150 INCHES MINIMUM AND 0.175 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 0.4 MAXIMUM FORWARD VOLTAGE, DC
Related Searches:
HSCH-3486
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012856685
NSN
5961-01-285-6685
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE AND GOLD PLATED LEADS
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACES GOLD
INCLOSURE MATERIAL: CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.068 INCHES MINIMUM AND 0.076 INCHES MAXIMUM
OVERALL LENGTH: 0.150 INCHES MINIMUM AND 0.175 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 0.4 MAXIMUM FORWARD VOLTAGE, DC
Related Searches:
020184
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012857877
NSN
5961-01-285-7877
MFG
HERLEY INDUSTRIES INC. DBA HERLEY NEW ENGLAND
Description
(NON-CORE DATA) SUPPLEMENTARY FEATURES: ITEM IS MADE FROM DIODE P/N 010503 AND IS SOLDERED TO P/N2014 SERVOMETER CORP
III END ITEM IDENTIFICATION: APX-103,E-3
MOUNTING METHOD: COMPRESSION
Related Searches:
020182
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012857878
NSN
5961-01-285-7878
MFG
HERLEY INDUSTRIES INC. DBA HERLEY NEW ENGLAND
Description
(NON-CORE DATA) SUPPLEMENTARY FEATURES: ITEM IS MADE FROM P/N 010504 AND IS SOLDERED TO SERVOMETER CORP P/N 2014 BELLOWS
III END ITEM IDENTIFICATION: AN/APX-103,E-3
Related Searches:
020180
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012857879
NSN
5961-01-285-7879
MFG
HERLEY INDUSTRIES INC. DBA HERLEY NEW ENGLAND
Description
(NON-CORE DATA) SUPPLEMENTARY FEATURES: ITEM IS MADE FROM P/N 010502 DIODE AND THEN SOLDERED TO SERVOMETER CORP P/N 2014
III END ITEM IDENTIFICATION: AN/APX-103
Related Searches:
151-0424-00
TRANSISTOR
NSN, MFG P/N
5961012858492
NSN
5961-01-285-8492
MFG
TEKTRONIX INC. DBA TEKTRONIX
Description
TRANSISTOR
Related Searches:
SJ2758
TRANSISTOR
NSN, MFG P/N
5961012858492
NSN
5961-01-285-8492
MFG
FREESCALE SEMICONDUCTOR INC.
Description
TRANSISTOR
Related Searches:
1712505-3
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012858596
NSN
5961-01-285-8596
MFG
HONEYWELL INTL DBA HONEYWELL DIV BUSINESS AND GENERAL AVIATION
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
1.5KE56A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012858757
NSN
5961-01-285-8757
MFG
PROTEK DEVICES LP DBA PROTEK DEVICES
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 MILLIAMPERES NOMINAL ON-STATE CURRENT, INSTANTANEOUS AND 5.00 MICROAMPERES MAXIMUM REVERSE CURRENT, INSTANTANEOUS AND 19.50 AMPERES MAXIMUM PEAK PULSE CURRENT
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.190 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
OVERALL LENGTH: 0.360 INCHES MINIMUM AND 0.375 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1500.0 WATTS NOMINAL TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE 6741B PROFESSIONAL/INDUSTRIAL ASSOCIATION STANDARD
TERMINAL CIRCLE DIAMETER: 0.040 INCHES NOMINAL
TERMINAL LENGTH: 1.100 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 47.8 NOMINAL REVERSE VOLTAGE, INSTANTANEOUS
Related Searches:
1N6289A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012858757
NSN
5961-01-285-8757
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 MILLIAMPERES NOMINAL ON-STATE CURRENT, INSTANTANEOUS AND 5.00 MICROAMPERES MAXIMUM REVERSE CURRENT, INSTANTANEOUS AND 19.50 AMPERES MAXIMUM PEAK PULSE CURRENT
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.190 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
OVERALL LENGTH: 0.360 INCHES MINIMUM AND 0.375 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1500.0 WATTS NOMINAL TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE 6741B PROFESSIONAL/INDUSTRIAL ASSOCIATION STANDARD
TERMINAL CIRCLE DIAMETER: 0.040 INCHES NOMINAL
TERMINAL LENGTH: 1.100 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 47.8 NOMINAL REVERSE VOLTAGE, INSTANTANEOUS
