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5961-01-524-8648
20 Products
356A1451P114
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015248648
NSN
5961-01-524-8648
356A1451P114
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015248648
NSN
5961-01-524-8648
MFG
BAE SYSTEMS CONTROLS INC.
Description
III END ITEM IDENTIFICATION: C-17 AIRCRAFT
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: 3.3V@50 MICRO AMPS,500 MW ZENER,SOD-123 PACKAGE,ESD SENSITIVE
Related Searches:
MMSZ4684T1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015248648
NSN
5961-01-524-8648
MMSZ4684T1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015248648
NSN
5961-01-524-8648
MFG
SEMICONDUCTOR COMPONENTS INDUSTRIES LLC DBA SEMI CONDUCTOR COMPONENTS INDUSTRIES DIV CORPORATE HEADQUARTERS
Description
III END ITEM IDENTIFICATION: C-17 AIRCRAFT
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: 3.3V@50 MICRO AMPS,500 MW ZENER,SOD-123 PACKAGE,ESD SENSITIVE
Related Searches:
356A1451P43
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015248649
NSN
5961-01-524-8649
356A1451P43
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015248649
NSN
5961-01-524-8649
MFG
BAE SYSTEMS CONTROLS INC.
Description
III END ITEM IDENTIFICATION: C-17A AIRCRAFT
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: 18VWM,1.5KW,BI,TVS,D0-214AB PACKAGE,ESD SENSITIVE
Related Searches:
MXSMCJ18CA
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015248649
NSN
5961-01-524-8649
MXSMCJ18CA
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015248649
NSN
5961-01-524-8649
MFG
MICROSEMI CORP.-SCOTTSDALE DBA MICROSEMI
Description
III END ITEM IDENTIFICATION: C-17A AIRCRAFT
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: 18VWM,1.5KW,BI,TVS,D0-214AB PACKAGE,ESD SENSITIVE
Related Searches:
SMCJ18CA
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015248649
NSN
5961-01-524-8649
MFG
GENERAL SEMICONDUCTOR INC
Description
III END ITEM IDENTIFICATION: C-17A AIRCRAFT
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: 18VWM,1.5KW,BI,TVS,D0-214AB PACKAGE,ESD SENSITIVE
Related Searches:
356A1451P113
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015248651
NSN
5961-01-524-8651
356A1451P113
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015248651
NSN
5961-01-524-8651
MFG
BAE SYSTEMS CONTROLS INC.
Description
III END ITEM IDENTIFICATION: C-17 AIRCRAFT
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: 5.6V & 20MA,500 MW,ZENER, SOD-123PACKAGE
Related Searches:
MMSZ5232BT1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015248651
NSN
5961-01-524-8651
MMSZ5232BT1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015248651
NSN
5961-01-524-8651
MFG
SEMICONDUCTOR COMPONENTS INDUSTRIES LLC DBA SEMI CONDUCTOR COMPONENTS INDUSTRIES DIV CORPORATE HEADQUARTERS
Description
III END ITEM IDENTIFICATION: C-17 AIRCRAFT
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: 5.6V & 20MA,500 MW,ZENER, SOD-123PACKAGE
Related Searches:
010505-1
TRANSISTOR
NSN, MFG P/N
5961015248985
NSN
5961-01-524-8985
MFG
HERLEY INDUSTRIES INC. DBA HERLEY NEW ENGLAND
Description
TRANSISTOR
Related Searches:
137-03-DWG REF DES CR1 THRU CR6
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961015249025
NSN
5961-01-524-9025
137-03-DWG REF DES CR1 THRU CR6
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961015249025
NSN
5961-01-524-9025
MFG
PIVOTAL POWER INC
Description
CURRENT RATING PER CHARACTERISTIC: 190.00 AMPERES MAXIMUM ON-STATE CURRENT, AVERAGE
III PART NAME ASSIGNED BY CONTROLLING AGENCY: THYRISTOR MODULE
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL LENGTH: 94.0 MILLIMETERS NOMINAL
OVERALL WIDTH: 34.0 MILLIMETERS NOMINAL
POWER RATING PER CHARACTERISTIC: 120.0 WATTS MAXIMUM GATE POWER DISSIPATION
SPECIAL FEATURES: ISOLATION VOLTAGE 3600 V~
TERMINAL TYPE AND QUANTITY: 3 SCREW
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 NOMINAL REPETITIVE PEAK OFF-STATE VOLTAGE
Related Searches:
MCD162-08IO1
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961015249025
NSN
5961-01-524-9025
MCD162-08IO1
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961015249025
NSN
5961-01-524-9025
MFG
IXYS CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 190.00 AMPERES MAXIMUM ON-STATE CURRENT, AVERAGE
III PART NAME ASSIGNED BY CONTROLLING AGENCY: THYRISTOR MODULE
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL LENGTH: 94.0 MILLIMETERS NOMINAL
OVERALL WIDTH: 34.0 MILLIMETERS NOMINAL
POWER RATING PER CHARACTERISTIC: 120.0 WATTS MAXIMUM GATE POWER DISSIPATION
SPECIAL FEATURES: ISOLATION VOLTAGE 3600 V~
TERMINAL TYPE AND QUANTITY: 3 SCREW
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 NOMINAL REPETITIVE PEAK OFF-STATE VOLTAGE
Related Searches:
137-03-DWG REF DES Q1,Q2,Q3,Q4
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961015249406
NSN
5961-01-524-9406
137-03-DWG REF DES Q1,Q2,Q3,Q4
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961015249406
NSN
5961-01-524-9406
MFG
PIVOTAL POWER INC
Description
COMPONENT NAME AND QUANTITY: 1 TRANSISTOR AND 1 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 600.00 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE ALL SEMICONDUCTOR
III PART NAME ASSIGNED BY CONTROLLING AGENCY: SINGLE IGBTMOD H-SERIES MODULE: 600AMPS/600VOLTS
OVERALL HEIGHT: 36.0 MILLIMETERS NOMINAL
OVERALL LENGTH: 110.0 MILLIMETERS NOMINAL
OVERALL WIDTH: 80.0 MILLIMETERS NOMINAL
POWER RATING PER CHARACTERISTIC: 2100.0 WATTS MAXIMUM TOTAL POWER DISSIPATION ALL SEMICONDUCTOR
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR
TERMINAL TYPE AND QUANTITY: 4 SCREW
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM COLLECTOR-TO-EMITTER, SUBSTAINING VOLTAGE, BASE SHORT-CIRCUITEDTO EMITTER ALL SEMICONDUCTOR
Related Searches:
CM600HA-12H
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961015249406
NSN
5961-01-524-9406
CM600HA-12H
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961015249406
NSN
5961-01-524-9406
MFG
POWEREX INC
Description
COMPONENT NAME AND QUANTITY: 1 TRANSISTOR AND 1 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 600.00 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE ALL SEMICONDUCTOR
III PART NAME ASSIGNED BY CONTROLLING AGENCY: SINGLE IGBTMOD H-SERIES MODULE: 600AMPS/600VOLTS
OVERALL HEIGHT: 36.0 MILLIMETERS NOMINAL
OVERALL LENGTH: 110.0 MILLIMETERS NOMINAL
OVERALL WIDTH: 80.0 MILLIMETERS NOMINAL
POWER RATING PER CHARACTERISTIC: 2100.0 WATTS MAXIMUM TOTAL POWER DISSIPATION ALL SEMICONDUCTOR
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR
TERMINAL TYPE AND QUANTITY: 4 SCREW
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM COLLECTOR-TO-EMITTER, SUBSTAINING VOLTAGE, BASE SHORT-CIRCUITEDTO EMITTER ALL SEMICONDUCTOR
Related Searches:
106-985-000
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961015249647
NSN
5961-01-524-9647
106-985-000
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961015249647
NSN
5961-01-524-9647
MFG
BEHLMAN ELECTRONICS INC. USE CAGE CODE 12868 FOR CATALOGING.
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 60.00 AMPERES OFF-STATE CURRENT, DC
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 REPETITIVE PEAK REVERSE VOLTAGE
MOUNTING METHOD: TERMINAL
OPERATING TEMP RANGE: -40.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 25.0 MILLIMETERS MAXIMUM
OVERALL LENGTH: 80.0 MILLIMETERS NOMINAL
OVERALL WIDTH: 40.0 MILLIMETERS NOMINAL
SPECIAL FEATURES: THREE PHASE BRIDGE TYPE DIODE; ISOLATED MOUNTING BASE
Related Searches:
DF60LB80
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961015249647
NSN
5961-01-524-9647
DF60LB80
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961015249647
NSN
5961-01-524-9647
MFG
SANREX CORP
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 60.00 AMPERES OFF-STATE CURRENT, DC
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 REPETITIVE PEAK REVERSE VOLTAGE
MOUNTING METHOD: TERMINAL
OPERATING TEMP RANGE: -40.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 25.0 MILLIMETERS MAXIMUM
OVERALL LENGTH: 80.0 MILLIMETERS NOMINAL
OVERALL WIDTH: 40.0 MILLIMETERS NOMINAL
SPECIAL FEATURES: THREE PHASE BRIDGE TYPE DIODE; ISOLATED MOUNTING BASE
Related Searches:
RHRP860
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015249868
NSN
5961-01-524-9868
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
CURRENT RATING PER CHARACTERISTIC: 8.00 AMPERES MINIMUM FORWARD CURRENT, AVERAGE AND 100.00 AMPERES MAXIMUM PEAK NONREPETITIVE SURGE CURRENT
INCLOSURE MATERIAL: METAL AND PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-220
MOUNTING FACILITY QUANTITY: 3
MOUNTING METHOD: TERMINAL AND UNTHREADED HOLE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD AND 1 UNTHREADED HOLE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 600.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
Related Searches:
SL303100L
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961015249916
NSN
5961-01-524-9916
SL303100L
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961015249916
NSN
5961-01-524-9916
MFG
RSM ELECTRON POWER INC . DBA RSM SENSITRON SEMICONDUCTOR
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 150.00 AMPERES PEAK FORWARD SURGE CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 PEAK INVERSE VOLTAGE
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
Related Searches:
DF20BA80
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961015249925
NSN
5961-01-524-9925
DF20BA80
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961015249925
NSN
5961-01-524-9925
MFG
SANREX CORP
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 20.00 AMPERES OFF-STATE CURRENT, DC
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 REPETITIVE PEAK REVERSE VOLTAGE
MOUNTING METHOD: TERMINAL
OPERATING TEMP RANGE: -40.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 28.0 MILLIMETERS MAXIMUM
OVERALL LENGTH: 80.0 MILLIMETERS NOMINAL
OVERALL WIDTH: 29.0 MILLIMETERS NOMINAL
SPECIAL FEATURES: THREE PHASE BRIDGE TYPE; ISOLATED MOUNTING BASE
Related Searches:
A62024000AP
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015250687
NSN
5961-01-525-0687
A62024000AP
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015250687
NSN
5961-01-525-0687
MFG
PANASONIC CORPORATION OF NORTH AMERICA
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
361A9422P1
SEMICONDUCTOR DEVICE,PHOTO
NSN, MFG P/N
5961015251288
NSN
5961-01-525-1288
361A9422P1
SEMICONDUCTOR DEVICE,PHOTO
NSN, MFG P/N
5961015251288
NSN
5961-01-525-1288
MFG
BAE SYSTEMS CONTROLS INC.
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
III END ITEM IDENTIFICATION: C-17 AIRCRAFT
INCLOSURE MATERIAL: METAL
MOUNTING FACILITY QUANTITY: 3
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.270 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 275.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: PACKAGE CONTAINS 1 LED AND 1 TRANSISTOR
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM COLLECTOR-TO-EMITTER, WITH VOLTAGE BETWEEN BASE AND EMITTER
Related Searches:
66133-104
SEMICONDUCTOR DEVICE,PHOTO
NSN, MFG P/N
5961015251288
NSN
5961-01-525-1288
MFG
MICROPAC INDUSTRIES INC.
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
III END ITEM IDENTIFICATION: C-17 AIRCRAFT
INCLOSURE MATERIAL: METAL
MOUNTING FACILITY QUANTITY: 3
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.270 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 275.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: PACKAGE CONTAINS 1 LED AND 1 TRANSISTOR
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM COLLECTOR-TO-EMITTER, WITH VOLTAGE BETWEEN BASE AND EMITTER
