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5961-01-286-3650
20 Products
700411
TRANSISTOR
NSN, MFG P/N
5961012863650
NSN
5961-01-286-3650
MFG
DATAMETRICS CORPORATION
Description
CRITICALITY CODE JUSTIFICATION: FEAT
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: HARDNESS CRITICAL ITEM; DESTRUCTIVE PHYSICAL ANALYSIS PER CAGE 19059,DWG 700439,SECTION 6; LOW POWER,PNP
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JANTXV2N2907A
TRANSISTOR
NSN, MFG P/N
5961012863650
NSN
5961-01-286-3650
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CRITICALITY CODE JUSTIFICATION: FEAT
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: HARDNESS CRITICAL ITEM; DESTRUCTIVE PHYSICAL ANALYSIS PER CAGE 19059,DWG 700439,SECTION 6; LOW POWER,PNP
Related Searches:
1RKD-91-04
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012864083
NSN
5961-01-286-4083
1RKD-91-04
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012864083
NSN
5961-01-286-4083
MFG
SEMICON COMPONENTS INC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
B101915-6
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012864727
NSN
5961-01-286-4727
MFG
LEXAN INDUSTRIES INC DBA STRUTHERS ELECTRONICS DIV STRUTHERS ELECTRONICS
Description
DESIGN CONTROL REFERENCE: B101915-6
III END ITEM IDENTIFICATION: 00341-502-120-G1-G4,WATTMETER
MANUFACTURERS CODE: 00341
THE MANUFACTURERS DATA:
Related Searches:
101915-4
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012864729
NSN
5961-01-286-4729
MFG
LEXAN INDUSTRIES INC DBA STRUTHERS ELECTRONICS DIV STRUTHERS ELECTRONICS
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
TCRZS4742
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012865741
NSN
5961-01-286-5741
MFG
COMTEC INFORMATION SYSTEMS INC DIGITRONICS DIV
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
C5083383
TRANSISTOR
NSN, MFG P/N
5961012866562
NSN
5961-01-286-6562
MFG
US ARMY COMBAT SURVEILLANCE AND TARGET ACQUISITION LABORATORY
Description
TRANSISTOR
Related Searches:
29050-02-01
TRANSISTOR
NSN, MFG P/N
5961012866640
NSN
5961-01-286-6640
MFG
ELDEC CORPORATION DBA CRANE AEROSPACE & ELECTRONIC
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 0.50 AMPERES MAXIMUM BASE CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-39
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 2.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 08748-29050 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 MAXIMUM COLLECTOR TO BASE VOLTAGE,
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2N5096A
TRANSISTOR
NSN, MFG P/N
5961012866640
NSN
5961-01-286-6640
MFG
SOLID STATE DEVICES INC.
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 0.50 AMPERES MAXIMUM BASE CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-39
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 2.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 08748-29050 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 MAXIMUM COLLECTOR TO BASE VOLTAGE,
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5016250-006
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012866892
NSN
5961-01-286-6892
5016250-006
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012866892
NSN
5961-01-286-6892
MFG
SINGER LINK-MILES LTD
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
54139501
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012866892
NSN
5961-01-286-6892
MFG
OKI AMERICA INC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
MSM4069
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012866892
NSN
5961-01-286-6892
MFG
OKI ELECTRONICS OF AMERICA INC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
4LP-44385-2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012866893
NSN
5961-01-286-6893
4LP-44385-2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012866893
NSN
5961-01-286-6893
MFG
OKI ELECTRONICS OF AMERICA INC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
54134102
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012866893
NSN
5961-01-286-6893
MFG
OKI AMERICA INC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
SBMB0
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961012867075
NSN
5961-01-286-7075
MFG
SEMTECH CORPUS CHRISTI.A. DE C.V. REYNOSA FACILITY
Description
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1.2 REVERSE VOLTAGE, PEAK
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.680 INCHES NOMINAL
OVERALL LENGTH: 0.680 INCHES NOMINAL
OVERALL WIDTH: 0.500 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 4 WIRE LEAD
Related Searches:
Q00260F
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012867276
NSN
5961-01-286-7276
Q00260F
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012867276
NSN
5961-01-286-7276
MFG
SCIENTIFIC RADIO SYSTEMS INC
Description
CURRENT RATING PER CHARACTERISTIC: 25.00 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL
DESIGN CONTROL REFERENCE: SC260E2
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: GATE
III END ITEM IDENTIFICATION: NON DIRECTIONAL BEACON,RECEIVER MODEL SR115 (NDBSR115)
INCLOSURE MATERIAL: CERAMIC AND METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: SC129
MANUFACTURERS CODE: 08125
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 115.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL HEIGHT: 1.500 INCHES NOMINAL
OVERALL LENGTH: 0.500 INCHES NOMINAL
OVERALL WIDTH: 0.469 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 125.0 MILLIWATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 SOLDER STUD AND 1 CASE
THE MANUFACTURERS DATA:
THREAD QUANTITY PER INCH: 27
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER
Related Searches:
SC260E2
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012867276
NSN
5961-01-286-7276
SC260E2
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012867276
NSN
5961-01-286-7276
MFG
U S DEPT OF TRANSPORTATION FEDERAL AVIATION ADMINISTRATION
Description
CURRENT RATING PER CHARACTERISTIC: 25.00 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL
DESIGN CONTROL REFERENCE: SC260E2
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: GATE
III END ITEM IDENTIFICATION: NON DIRECTIONAL BEACON,RECEIVER MODEL SR115 (NDBSR115)
INCLOSURE MATERIAL: CERAMIC AND METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: SC129
MANUFACTURERS CODE: 08125
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 115.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL HEIGHT: 1.500 INCHES NOMINAL
OVERALL LENGTH: 0.500 INCHES NOMINAL
OVERALL WIDTH: 0.469 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 125.0 MILLIWATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 SOLDER STUD AND 1 CASE
THE MANUFACTURERS DATA:
THREAD QUANTITY PER INCH: 27
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER
Related Searches:
62-521-006
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961012868426
NSN
5961-01-286-8426
MFG
ASTEC AMERICA INC .
Description
SEMICONDUCTOR DEVICE SET
Related Searches:
2487463-1
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961012869057
NSN
5961-01-286-9057
2487463-1
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961012869057
NSN
5961-01-286-9057
MFG
RAYTHEON COMPANY
Description
MATERIAL: BERYLLIUM
MOUNTING FACILITY TYPE AND QUANTITY: 1 UNTHREADED HOLE SINGLE MOUNTING FACILITY
OVERALL DIAMETER: 0.248 INCHES NOMINAL
OVERALL LENGTH: 0.267 INCHES NOMINAL
STYLE DESIGNATOR: 3C CYLINDRICAL
UNTHREADED MOUNTING HOLE DIAMETER: 0.187 INCHES NOMINAL SINGLE MOUNTING FACILITY
Related Searches:
BP12999
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961012869057
NSN
5961-01-286-9057
BP12999
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961012869057
NSN
5961-01-286-9057
MFG
BURKE PRODUCTS INC.
Description
MATERIAL: BERYLLIUM
MOUNTING FACILITY TYPE AND QUANTITY: 1 UNTHREADED HOLE SINGLE MOUNTING FACILITY
OVERALL DIAMETER: 0.248 INCHES NOMINAL
OVERALL LENGTH: 0.267 INCHES NOMINAL
STYLE DESIGNATOR: 3C CYLINDRICAL
UNTHREADED MOUNTING HOLE DIAMETER: 0.187 INCHES NOMINAL SINGLE MOUNTING FACILITY
