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5961-01-290-5602
20 Products
05P00050-0337
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012905602
NSN
5961-01-290-5602
05P00050-0337
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012905602
NSN
5961-01-290-5602
MFG
MAGNETEK INC INDUSTRIAL CONTROLS GROUP DIV DBA MAGNETEK
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
12-712554-01
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012905603
NSN
5961-01-290-5603
12-712554-01
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012905603
NSN
5961-01-290-5603
MFG
EMERSON ELECTRIC CO COMPUTER POWER DIV
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
12-712720-05
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012905604
NSN
5961-01-290-5604
12-712720-05
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012905604
NSN
5961-01-290-5604
MFG
EMERSON ELECTRIC CO COMPUTER POWER DIV
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
02-1130-02
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012905605
NSN
5961-01-290-5605
02-1130-02
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012905605
NSN
5961-01-290-5605
MFG
LUCAS AEROSPACE POWER EQUIPMENT CORPORATION
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
05P00050-0107
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012905608
NSN
5961-01-290-5608
05P00050-0107
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012905608
NSN
5961-01-290-5608
MFG
MAGNETEK INC INDUSTRIAL CONTROLS GROUP DIV DBA MAGNETEK
Description
SEMICONDUCTOR DEVICE,THYRISTOR
Related Searches:
05P00050-0133
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012905609
NSN
5961-01-290-5609
05P00050-0133
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012905609
NSN
5961-01-290-5609
MFG
MAGNETEK INC INDUSTRIAL CONTROLS GROUP DIV DBA MAGNETEK
Description
SEMICONDUCTOR DEVICE,THYRISTOR
Related Searches:
05P00050-0235
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012905610
NSN
5961-01-290-5610
05P00050-0235
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012905610
NSN
5961-01-290-5610
MFG
MAGNETEK INC INDUSTRIAL CONTROLS GROUP DIV DBA MAGNETEK
Description
SEMICONDUCTOR DEVICE,THYRISTOR
Related Searches:
12-679164-02
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012905611
NSN
5961-01-290-5611
12-679164-02
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012905611
NSN
5961-01-290-5611
MFG
EMERSON ELECTRIC CO COMPUTER POWER DIV
Description
SEMICONDUCTOR DEVICE,THYRISTOR
Related Searches:
12-679125-02
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012905612
NSN
5961-01-290-5612
12-679125-02
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012905612
NSN
5961-01-290-5612
MFG
EMERSON ELECTRIC CO COMPUTER POWER DIV
Description
INCLOSURE MATERIAL: CERAMIC AND METAL
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 0.520 INCHES NOMINAL
OVERALL LENGTH: 1.600 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 INSULATED WIRE LEAD W/TERMINAL LUG AND 2 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 700.0 MINIMUM FORWARD VOLTAGE, PEAK
Related Searches:
C-364SX44
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012905612
NSN
5961-01-290-5612
C-364SX44
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012905612
NSN
5961-01-290-5612
MFG
GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT
Description
INCLOSURE MATERIAL: CERAMIC AND METAL
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 0.520 INCHES NOMINAL
OVERALL LENGTH: 1.600 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 INSULATED WIRE LEAD W/TERMINAL LUG AND 2 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 700.0 MINIMUM FORWARD VOLTAGE, PEAK
Related Searches:
C364S
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012905612
NSN
5961-01-290-5612
MFG
POWEREX INC
Description
INCLOSURE MATERIAL: CERAMIC AND METAL
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 0.520 INCHES NOMINAL
OVERALL LENGTH: 1.600 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 INSULATED WIRE LEAD W/TERMINAL LUG AND 2 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 700.0 MINIMUM FORWARD VOLTAGE, PEAK
Related Searches:
T527071384
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012905612
NSN
5961-01-290-5612
T527071384
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012905612
NSN
5961-01-290-5612
MFG
WESTINGHOUSE ELECTRIC CORP SEMICONDUCTOR DIV
Description
INCLOSURE MATERIAL: CERAMIC AND METAL
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 0.520 INCHES NOMINAL
OVERALL LENGTH: 1.600 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 INSULATED WIRE LEAD W/TERMINAL LUG AND 2 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 700.0 MINIMUM FORWARD VOLTAGE, PEAK
Related Searches:
31822
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012905662
NSN
5961-01-290-5662
MFG
SURE POWER INC. DBA SURE POWER INDUSTRIES
Description
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
INCLOSURE MATERIAL: METAL
MOUNTING FACILITY QUANTITY: 8
MOUNTING METHOD: SLOT
OVERALL HEIGHT: 3.250 INCHES NOMINAL
OVERALL LENGTH: 9.000 INCHES NOMINAL
OVERALL WIDTH: 4.500 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 THREADED STUD
Related Searches:
02-1120-40
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012906581
NSN
5961-01-290-6581
02-1120-40
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012906581
NSN
5961-01-290-6581
MFG
LUCAS AEROSPACE POWER EQUIPMENT CORPORATION
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
02-1120-41
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961012906582
NSN
5961-01-290-6582
02-1120-41
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961012906582
NSN
5961-01-290-6582
MFG
LUCAS AEROSPACE POWER EQUIPMENT CORPORATION
Description
RECTIFIER,SEMICONDUCTOR DEVICE
Related Searches:
02-1031-53
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961012906583
NSN
5961-01-290-6583
02-1031-53
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961012906583
NSN
5961-01-290-6583
MFG
LUCAS AEROSPACE POWER EQUIPMENT CORPORATION
Description
RECTIFIER,SEMICONDUCTOR DEVICE
Related Searches:
03-0044-38
TRANSISTOR
NSN, MFG P/N
5961012906586
NSN
5961-01-290-6586
MFG
LUCAS AEROSPACE POWER EQUIPMENT CORPORATION
Description
TRANSISTOR
Related Searches:
02-1078-06
TRANSISTOR
NSN, MFG P/N
5961012906587
NSN
5961-01-290-6587
MFG
LUCAS AEROSPACE POWER EQUIPMENT CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 800.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.290 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 75.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 6.0 MAXIMUM EMITTER TO BASE VOLTAGE, INSTANTANEOUS AND 40.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC
Related Searches:
03-0063-12
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012906588
NSN
5961-01-290-6588
03-0063-12
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012906588
NSN
5961-01-290-6588
MFG
LUCAS AEROSPACE POWER EQUIPMENT CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: RECTIFIER
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.075 INCHES MAXIMUM
OVERALL LENGTH: 0.180 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 75.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
Related Searches:
0312589
TRANSISTOR
NSN, MFG P/N
5961012906650
NSN
5961-01-290-6650
MFG
SAGEM TELECOMMUNICATIONS
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 72.00 AMPERES MAXIMUM OFF-STATE CURRENT, PEAK
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-220AB
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: TERMINAL AND UNTHREADED HOLE
OVERALL HEIGHT: 0.190 INCHES MAXIMUM
OVERALL LENGTH: 0.650 INCHES MAXIMUM
OVERALL WIDTH: 0.420 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 125.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.580 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
