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5961-01-139-0331
20 Products
1N5274B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011390331
NSN
5961-01-139-0331
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 1.90 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N4492
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: VOLTAGE REGULATOR
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/406
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
OVERALL LENGTH: 0.125 INCHES MINIMUM AND 0.160 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.5 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/406 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.800 INCHES MINIMUM AND 1.300 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATI
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GC1509-30
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011389756
NSN
5961-01-138-9756
MFG
MICROSEMI CORP-MASSACHUSETTS DBA MICROSEMI-LOWELL DIV MICROSEMI - LOWELL
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: 6625NC614190P FSCM 18323
INCLOSURE MATERIAL: CERAMIC
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 0.124 INCHES MAXIMUM
OVERALL LENGTH: 0.103 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: THE MAXIMUM VOLTAGE RATING IS A MINIMUM VALUE IAW CATALOG PART NO. GL1509-30 FSCM 50101; JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL TYPE AND QUANTITY: 2 FLANGE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM REVERSE BREAKDOWN VOLTAGE, DC
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SM-C-416324
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011389757
NSN
5961-01-138-9757
SM-C-416324
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011389757
NSN
5961-01-138-9757
MFG
US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR
Description
SEMICONDUCTOR DEVICE,DIODE
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0N231797
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011389982
NSN
5961-01-138-9982
MFG
NATIONAL SECURITY AGENCY
Description
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: BRACKET
POWER RATING PER CHARACTERISTIC: 150.00 MILLIWATTS MAXIMUM FORWARD POWER DISSIPATION, MAXIMUM PEAK, TOTAL VALUE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
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1117 4513
TRANSISTOR
NSN, MFG P/N
5961011390037
NSN
5961-01-139-0037
MFG
LOCKHEED MARTIN CORP LOCKHEED MARTIN MISSION SYSTEMS
Description
TRANSISTOR
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2N5840
TRANSISTOR
NSN, MFG P/N
5961011390038
NSN
5961-01-139-0038
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
TRANSISTOR
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CA3045
TRANSISTOR
NSN, MFG P/N
5961011390039
NSN
5961-01-139-0039
MFG
PENN REFRIGERATION SERVICE
Description
TRANSISTOR
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286018-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011390040
NSN
5961-01-139-0040
MFG
GOULD INSTRUMENT SYSTEMS INC
Description
SEMICONDUCTOR DEVICE,DIODE
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KBP04
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011390040
NSN
5961-01-139-0040
MFG
GENERAL INSTRUMENT CORP SEMICONDUCTOR DIV
Description
SEMICONDUCTOR DEVICE,DIODE
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00423-60003
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011390042
NSN
5961-01-139-0042
00423-60003
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011390042
NSN
5961-01-139-0042
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
SEMICONDUCTOR DEVICE,DIODE
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1123621P01-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011390042
NSN
5961-01-139-0042
1123621P01-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011390042
NSN
5961-01-139-0042
MFG
SELEX GALILEO SPA
Description
SEMICONDUCTOR DEVICE,DIODE
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BZV40C68
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011390043
NSN
5961-01-139-0043
MFG
MICROSEMI CORP.-SCOTTSDALE DBA MICROSEMI
Description
SEMICONDUCTOR DEVICE,DIODE
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1196024P3
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011390147
NSN
5961-01-139-0147
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
CURRENT RATING PER CHARACTERISTIC: 14.40 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N4994
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/356
OVERALL DIAMETER: 0.090 INCHES MINIMUM AND 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 0.900 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500/356 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 330.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0
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925115-41B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011390147
NSN
5961-01-139-0147
925115-41B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011390147
NSN
5961-01-139-0147
MFG
RAYTHEON COMPANY
Description
CURRENT RATING PER CHARACTERISTIC: 14.40 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N4994
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/356
OVERALL DIAMETER: 0.090 INCHES MINIMUM AND 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 0.900 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500/356 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 330.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0
Related Searches:
JAN1N4994
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011390147
NSN
5961-01-139-0147
MFG
MICRO USPD INC
Description
CURRENT RATING PER CHARACTERISTIC: 14.40 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N4994
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/356
OVERALL DIAMETER: 0.090 INCHES MINIMUM AND 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 0.900 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500/356 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 330.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0
Related Searches:
JANTX1N4994
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011390147
NSN
5961-01-139-0147
JANTX1N4994
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011390147
NSN
5961-01-139-0147
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 14.40 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N4994
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/356
OVERALL DIAMETER: 0.090 INCHES MINIMUM AND 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 0.900 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500/356 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 330.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0
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SS4551
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011390147
NSN
5961-01-139-0147
MFG
SEMTECH CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 14.40 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N4994
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/356
OVERALL DIAMETER: 0.090 INCHES MINIMUM AND 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 0.900 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500/356 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 330.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0
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RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011390220
NSN
5961-01-139-0220
5L.5532.405.35
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011390220
NSN
5961-01-139-0220
MFG
EADS DEUTSCHLAND GMBH -VERTEIDIGUNG UND ZIVILE SYSTEME-
Description
SPECIAL FEATURES: SILICON;600 PIV;1.5 AMPS AVERAGE RECTIFIED CURRENT AT 25 DEG C;0.680 IN. L;0.250 IN. W;0.500 IN. H;4 PIN TERMINALS
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SBMC6
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011390220
NSN
5961-01-139-0220
SBMC6
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011390220
NSN
5961-01-139-0220
MFG
SEMTECH CORPUS CHRISTI.A. DE C.V. REYNOSA FACILITY
Description
SPECIAL FEATURES: SILICON;600 PIV;1.5 AMPS AVERAGE RECTIFIED CURRENT AT 25 DEG C;0.680 IN. L;0.250 IN. W;0.500 IN. H;4 PIN TERMINALS
Related Searches:
4801-01-5274
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011390331
NSN
5961-01-139-0331
4801-01-5274
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011390331
NSN
5961-01-139-0331
MFG
WAVETEK U S INC DIV OF WAVETEK CORP
Description
CURRENT RATING PER CHARACTERISTIC: 1.90 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N4492
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: VOLTAGE REGULATOR
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/406
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
OVERALL LENGTH: 0.125 INCHES MINIMUM AND 0.160 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.5 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/406 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.800 INCHES MINIMUM AND 1.300 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATI
