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5961-01-333-7038
20 Products
353-6556-051
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013337038
NSN
5961-01-333-7038
353-6556-051
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013337038
NSN
5961-01-333-7038
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 50.00 AMPERES MAXIMUM REPETITIVE PEAK FORWARD CURRENT AND 10.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.150 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.250 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 MAXIMUM REVERSE VOLTAGE, PEAK
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922810 E
TRANSISTOR
NSN, MFG P/N
5961013336199
NSN
5961-01-333-6199
MFG
THALES COMMUNICATIONS INC.
Description
CURRENT RATING PER CHARACTERISTIC: 8.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FUNCTION FOR WHICH DESIGNED: SWITCHING
III END ITEM IDENTIFICATION: 5865-01-188-3309 AN/ULQ-19(V)1 JAMMER SYSTEM RESPO
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-220AB
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: TERMINAL AND UNTHREADED HOLE
OVERALL HEIGHT: 3.56 MILLIMETERS MINIMUM AND 4.82 MILLIMETERS MAXIMUM
OVERALL LENGTH: 14.23 MILLIMETERS MINIMUM AND 16.51 MILLIMETERS MAXIMUM
OVERALL WIDTH: 9.66 MILLIMETERS MINIMUM AND 10.66 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 65.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL LENGTH: 12.7 MILLIMETERS MINIMUM AND 14.73 MILLIMETERS MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 P
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BD244B
TRANSISTOR
NSN, MFG P/N
5961013336199
NSN
5961-01-333-6199
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 8.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FUNCTION FOR WHICH DESIGNED: SWITCHING
III END ITEM IDENTIFICATION: 5865-01-188-3309 AN/ULQ-19(V)1 JAMMER SYSTEM RESPO
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-220AB
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: TERMINAL AND UNTHREADED HOLE
OVERALL HEIGHT: 3.56 MILLIMETERS MINIMUM AND 4.82 MILLIMETERS MAXIMUM
OVERALL LENGTH: 14.23 MILLIMETERS MINIMUM AND 16.51 MILLIMETERS MAXIMUM
OVERALL WIDTH: 9.66 MILLIMETERS MINIMUM AND 10.66 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 65.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL LENGTH: 12.7 MILLIMETERS MINIMUM AND 14.73 MILLIMETERS MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 P
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936892 SD
TRANSISTOR
NSN, MFG P/N
5961013336200
NSN
5961-01-333-6200
MFG
THALES UK LIMITED
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 15.00 MILLIAMPERES MAXIMUM ZERO-GATE-VOLTAGE DRAIN CURRENT AND 10.00 MILLIAMPERES MAXIMUM GATE CURRENT
FUNCTION FOR WHICH DESIGNED: SWITCHING
III END ITEM IDENTIFICATION: 5865-01-188-3309 AN/ULQ-19(V)1 JAMMER SYSTEM RESPO
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-92
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 135.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.125 INCHES MINIMUM AND 0.165 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
OVERALL WIDTH: 0.175 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 360.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAG
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TRANSISTOR
NSN, MFG P/N
5961013336200
NSN
5961-01-333-6200
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 15.00 MILLIAMPERES MAXIMUM ZERO-GATE-VOLTAGE DRAIN CURRENT AND 10.00 MILLIAMPERES MAXIMUM GATE CURRENT
FUNCTION FOR WHICH DESIGNED: SWITCHING
III END ITEM IDENTIFICATION: 5865-01-188-3309 AN/ULQ-19(V)1 JAMMER SYSTEM RESPO
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-92
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 135.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.125 INCHES MINIMUM AND 0.165 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
OVERALL WIDTH: 0.175 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 360.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAG
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2N6666
TRANSISTOR
NSN, MFG P/N
5961013336201
NSN
5961-01-333-6201
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 8.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FUNCTION FOR WHICH DESIGNED: AMPLIFIER
III END ITEM IDENTIFICATION: 5865-01-188-3309 AN/ULQ-19(V)1 JAMMER SYSTEM RESPO
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT-DARLINGTON CONNECTED
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-220AB
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: TERMINAL AND UNTHREADED HOLE
OVERALL HEIGHT: 3.56 MILLIMETERS MINIMUM AND 4.82 MILLIMETERS MAXIMUM
OVERALL LENGTH: 14.23 MILLIMETERS MINIMUM AND 16.51 MILLIMETERS MAXIMUM
OVERALL WIDTH: 9.66 MILLIMETERS MINIMUM AND 10.66 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 26.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STAND
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TRANSISTOR
NSN, MFG P/N
5961013336201
NSN
5961-01-333-6201
MFG
THALES UK LIMITED
Description
CURRENT RATING PER CHARACTERISTIC: 8.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FUNCTION FOR WHICH DESIGNED: AMPLIFIER
III END ITEM IDENTIFICATION: 5865-01-188-3309 AN/ULQ-19(V)1 JAMMER SYSTEM RESPO
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT-DARLINGTON CONNECTED
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-220AB
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: TERMINAL AND UNTHREADED HOLE
OVERALL HEIGHT: 3.56 MILLIMETERS MINIMUM AND 4.82 MILLIMETERS MAXIMUM
OVERALL LENGTH: 14.23 MILLIMETERS MINIMUM AND 16.51 MILLIMETERS MAXIMUM
OVERALL WIDTH: 9.66 MILLIMETERS MINIMUM AND 10.66 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 26.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STAND
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622132613608
TRANSISTOR
NSN, MFG P/N
5961013336202
NSN
5961-01-333-6202
MFG
NCB HUNGARY HONVEDSEGI EGYSEGES TERMEKKOD
Description
CURRENT RATING PER CHARACTERISTIC: 15.00 NANOAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, EMITTER OPEN AND 15.00 NANOAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, WITH BASE SHORT-CIRCUITED TO EMITTER
III END ITEM IDENTIFICATION: 5865-01-188-3309 JAMMING SYSTEM,COMMUNICATIONS,GENERAL UTILITY
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-92
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.670 INCHES MINIMUM
OVERALL LENGTH: 0.190 INCHES NOMINAL
OVERALL WIDTH: 0.145 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MINIMUM COLLECTOR-TO-EMITTER, SUBSTAINING VOLTAGE, BASE OPEN-CIRCUITED
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91689546
TRANSISTOR
NSN, MFG P/N
5961013336202
NSN
5961-01-333-6202
MFG
THALES
Description
CURRENT RATING PER CHARACTERISTIC: 15.00 NANOAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, EMITTER OPEN AND 15.00 NANOAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, WITH BASE SHORT-CIRCUITED TO EMITTER
III END ITEM IDENTIFICATION: 5865-01-188-3309 JAMMING SYSTEM,COMMUNICATIONS,GENERAL UTILITY
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-92
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.670 INCHES MINIMUM
OVERALL LENGTH: 0.190 INCHES NOMINAL
OVERALL WIDTH: 0.145 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MINIMUM COLLECTOR-TO-EMITTER, SUBSTAINING VOLTAGE, BASE OPEN-CIRCUITED
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BC213
TRANSISTOR
NSN, MFG P/N
5961013336202
NSN
5961-01-333-6202
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
CURRENT RATING PER CHARACTERISTIC: 15.00 NANOAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, EMITTER OPEN AND 15.00 NANOAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, WITH BASE SHORT-CIRCUITED TO EMITTER
III END ITEM IDENTIFICATION: 5865-01-188-3309 JAMMING SYSTEM,COMMUNICATIONS,GENERAL UTILITY
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-92
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.670 INCHES MINIMUM
OVERALL LENGTH: 0.190 INCHES NOMINAL
OVERALL WIDTH: 0.145 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MINIMUM COLLECTOR-TO-EMITTER, SUBSTAINING VOLTAGE, BASE OPEN-CIRCUITED
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BC213C
TRANSISTOR
NSN, MFG P/N
5961013336202
NSN
5961-01-333-6202
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 15.00 NANOAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, EMITTER OPEN AND 15.00 NANOAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, WITH BASE SHORT-CIRCUITED TO EMITTER
III END ITEM IDENTIFICATION: 5865-01-188-3309 JAMMING SYSTEM,COMMUNICATIONS,GENERAL UTILITY
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-92
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.670 INCHES MINIMUM
OVERALL LENGTH: 0.190 INCHES NOMINAL
OVERALL WIDTH: 0.145 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MINIMUM COLLECTOR-TO-EMITTER, SUBSTAINING VOLTAGE, BASE OPEN-CIRCUITED
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934472
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013336203
NSN
5961-01-333-6203
MFG
THALES COMMUNICATIONS INC.
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
III END ITEM IDENTIFICATION: 5865-01-188-3309 JAMMING SYSTEM,COMMUNICATIONS,GENERAL UTILITY
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-41
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.086 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.160 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.3 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.100 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
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BZX85C12
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013336203
NSN
5961-01-333-6203
MFG
ITT SEMICONDUCTORS A DIVISION OF INTERNATIONAL TELEPHONE AND TELEGRAPH CORP
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
III END ITEM IDENTIFICATION: 5865-01-188-3309 JAMMING SYSTEM,COMMUNICATIONS,GENERAL UTILITY
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-41
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.086 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.160 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.3 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.100 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
283-0007-010
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013336599
NSN
5961-01-333-6599
283-0007-010
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013336599
NSN
5961-01-333-6599
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD
OVERALL HEIGHT: 0.250 INCHES MINIMUM AND 0.290 INCHES MAXIMUM
OVERALL LENGTH: 0.970 INCHES MINIMUM AND 0.980 INCHES MAXIMUM
SPECIAL FEATURES: FREQUENCY RATING 20.0 MEGAHERTZ MIN AND 1000.0 MEGAHERTZ MAX; RF MAX VOLTAGE RATING - 900.0 VOLTS PEAK; OPERATING TEMPERATURE RANGE - MINUS 55.0 TO 125.0 DEG CELSIUS
TERMINAL TYPE AND QUANTITY: 3 PIN
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MA8334-066
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013336599
NSN
5961-01-333-6599
MA8334-066
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013336599
NSN
5961-01-333-6599
MFG
M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM
Description
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD
OVERALL HEIGHT: 0.250 INCHES MINIMUM AND 0.290 INCHES MAXIMUM
OVERALL LENGTH: 0.970 INCHES MINIMUM AND 0.980 INCHES MAXIMUM
SPECIAL FEATURES: FREQUENCY RATING 20.0 MEGAHERTZ MIN AND 1000.0 MEGAHERTZ MAX; RF MAX VOLTAGE RATING - 900.0 VOLTS PEAK; OPERATING TEMPERATURE RANGE - MINUS 55.0 TO 125.0 DEG CELSIUS
TERMINAL TYPE AND QUANTITY: 3 PIN
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283-0007-020
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013336600
NSN
5961-01-333-6600
283-0007-020
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013336600
NSN
5961-01-333-6600
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD
OVERALL HEIGHT: 0.250 INCHES MINIMUM AND 0.290 INCHES MAXIMUM
OVERALL LENGTH: 0.970 INCHES MINIMUM AND 0.980 INCHES MAXIMUM
SPECIAL FEATURES: FREQUENCY RATING - 20.0 MEGAHERTZ MIN AND 1000.0 MEGAHERTZ MAX SINGLE; RF MAX VOLTAGE RATING - 900.0 VOLTS PEAK; OPERATING TEM RANGE - MINUS 55.0 TO 125.0 DEG CELSIUS
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MA8334-067
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013336600
NSN
5961-01-333-6600
MA8334-067
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013336600
NSN
5961-01-333-6600
MFG
M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM
Description
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD
OVERALL HEIGHT: 0.250 INCHES MINIMUM AND 0.290 INCHES MAXIMUM
OVERALL LENGTH: 0.970 INCHES MINIMUM AND 0.980 INCHES MAXIMUM
SPECIAL FEATURES: FREQUENCY RATING - 20.0 MEGAHERTZ MIN AND 1000.0 MEGAHERTZ MAX SINGLE; RF MAX VOLTAGE RATING - 900.0 VOLTS PEAK; OPERATING TEM RANGE - MINUS 55.0 TO 125.0 DEG CELSIUS
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TRANSISTOR
NSN, MFG P/N
5961013337035
NSN
5961-01-333-7035
MFG
VEECO INSTRUMENTS INC LAMBDA DIV
Description
TRANSISTOR
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163894-01
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013337036
NSN
5961-01-333-7036
MFG
GE AVIATION SYSTEMS LLC
Description
SEMICONDUCTOR DEVICE,DIODE
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922-6139-170
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013337037
NSN
5961-01-333-7037
922-6139-170
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013337037
NSN
5961-01-333-7037
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
SEMICONDUCTOR DEVICE,DIODE
