My Quote Request
No products added yet
5961-01-339-7096
20 Products
2N5525
TRANSISTOR
NSN, MFG P/N
5961013397096
NSN
5961-01-339-7096
MFG
CRIMSON SEMICONDUCTOR INC
Description
TRANSISTOR
Related Searches:
20-00735-002
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013397097
NSN
5961-01-339-7097
20-00735-002
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013397097
NSN
5961-01-339-7097
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
48-82921G01
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013397098
NSN
5961-01-339-7098
48-82921G01
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013397098
NSN
5961-01-339-7098
MFG
MOTOROLA COMMUNICATIONS GROUP PARTS DEPT DIV OF MOTOROLA INC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
48-84802A01
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013397099
NSN
5961-01-339-7099
48-84802A01
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013397099
NSN
5961-01-339-7099
MFG
MOTOROLA COMMUNICATIONS GROUP PARTS DEPT DIV OF MOTOROLA INC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
T4013MK
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013397140
NSN
5961-01-339-7140
T4013MK
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013397140
NSN
5961-01-339-7140
MFG
RAYTHEON CO.
Description
SEMICONDUCTOR DEVICE,THYRISTOR
Related Searches:
142689-0002
TRANSISTOR
NSN, MFG P/N
5961013397332
NSN
5961-01-339-7332
MFG
NORTHROP GRUMMAN GUIDANCE AND ELECTRONICS COMPANY INC. DBA NAVIGATION SYSTEMS DIVISION DIV NAVIGATION SYSTEMS DIVISION
Description
CRITICALITY CODE JUSTIFICATION: FEAT
FEATURES PROVIDED: QUALITY ASSURANCE LEVEL TXV AND BURN IN AND ELECTROSTATIC SENSITIVE
INCLOSURE MATERIAL: CERAMIC OR METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.070 INCHES NOMINAL
OVERALL LENGTH: 0.070 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 425.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
TERMINAL LENGTH: 0.155 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 RIBBON
Related Searches:
NH142689-0002
TRANSISTOR
NSN, MFG P/N
5961013397332
NSN
5961-01-339-7332
MFG
DLA LAND AND MARITIME
Description
CRITICALITY CODE JUSTIFICATION: FEAT
FEATURES PROVIDED: QUALITY ASSURANCE LEVEL TXV AND BURN IN AND ELECTROSTATIC SENSITIVE
INCLOSURE MATERIAL: CERAMIC OR METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.070 INCHES NOMINAL
OVERALL LENGTH: 0.070 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 425.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
TERMINAL LENGTH: 0.155 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 RIBBON
Related Searches:
SWA7003H2
TRANSISTOR
NSN, MFG P/N
5961013397332
NSN
5961-01-339-7332
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CRITICALITY CODE JUSTIFICATION: FEAT
FEATURES PROVIDED: QUALITY ASSURANCE LEVEL TXV AND BURN IN AND ELECTROSTATIC SENSITIVE
INCLOSURE MATERIAL: CERAMIC OR METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.070 INCHES NOMINAL
OVERALL LENGTH: 0.070 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 425.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
TERMINAL LENGTH: 0.155 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 RIBBON
Related Searches:
142315-0002
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013397333
NSN
5961-01-339-7333
142315-0002
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013397333
NSN
5961-01-339-7333
MFG
NORTHROP GRUMMAN GUIDANCE AND ELECTRONICS COMPANY INC. DBA NAVIGATION SYSTEMS DIVISION DIV NAVIGATION SYSTEMS DIVISION
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: BURN IN AND QUALITY ASSURANCE LEVEL TXV
INCLOSURE MATERIAL: CERAMIC OR METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 0.119 INCHES MINIMUM AND 0.127 INCHES MAXIMUM
OVERALL LENGTH: 0.205 INCHES MINIMUM AND 0.225 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM; JUNCTION PATTERN ARRANGEMENT: PIN
TERMINAL TYPE AND QUANTITY: 2 FERRULE
Related Searches:
MA4P798
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013397333
NSN
5961-01-339-7333
MFG
M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: BURN IN AND QUALITY ASSURANCE LEVEL TXV
INCLOSURE MATERIAL: CERAMIC OR METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 0.119 INCHES MINIMUM AND 0.127 INCHES MAXIMUM
OVERALL LENGTH: 0.205 INCHES MINIMUM AND 0.225 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM; JUNCTION PATTERN ARRANGEMENT: PIN
TERMINAL TYPE AND QUANTITY: 2 FERRULE
Related Searches:
MX3404-2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013397333
NSN
5961-01-339-7333
MFG
AEROFLEX / METELICS INC.
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: BURN IN AND QUALITY ASSURANCE LEVEL TXV
INCLOSURE MATERIAL: CERAMIC OR METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 0.119 INCHES MINIMUM AND 0.127 INCHES MAXIMUM
OVERALL LENGTH: 0.205 INCHES MINIMUM AND 0.225 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM; JUNCTION PATTERN ARRANGEMENT: PIN
TERMINAL TYPE AND QUANTITY: 2 FERRULE
Related Searches:
NH142315-0002
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013397333
NSN
5961-01-339-7333
NH142315-0002
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013397333
NSN
5961-01-339-7333
MFG
DLA LAND AND MARITIME
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: BURN IN AND QUALITY ASSURANCE LEVEL TXV
INCLOSURE MATERIAL: CERAMIC OR METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 0.119 INCHES MINIMUM AND 0.127 INCHES MAXIMUM
OVERALL LENGTH: 0.205 INCHES MINIMUM AND 0.225 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM; JUNCTION PATTERN ARRANGEMENT: PIN
TERMINAL TYPE AND QUANTITY: 2 FERRULE
Related Searches:
8507001-137
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013397493
NSN
5961-01-339-7493
8507001-137
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013397493
NSN
5961-01-339-7493
MFG
HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE - ALBUQUERQUE
Description
DESIGN CONTROL REFERENCE: 8507001-137
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 07187
OVERALL DIAMETER: 0.140 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
THE MANUFACTURERS DATA:
Related Searches:
1853-0495
TRANSISTOR
NSN, MFG P/N
5961013398227
NSN
5961-01-339-8227
MFG
AGILENT TECHNOLOGIES INC. DBA NORTH AMERICAN CONTACT CENTER DIV AGILENT BUSINESS CENTER
Description
CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
III END ITEM IDENTIFICATION: 6625-01-224-4440 NETWORK ANALYZER
INCLOSURE MATERIAL: CERAMIC AND METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.164 INCHES
OVERALL DIAMETER: 0.375 INCHES NOMINAL
OVERALL LENGTH: 0.624 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 4 RIBBON
THREAD SERIES DESIGNATOR: UNC
TRANSFER RATIO: 20.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN
Related Searches:
2N5583
TRANSISTOR
NSN, MFG P/N
5961013398227
NSN
5961-01-339-8227
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
III END ITEM IDENTIFICATION: 6625-01-224-4440 NETWORK ANALYZER
INCLOSURE MATERIAL: CERAMIC AND METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.164 INCHES
OVERALL DIAMETER: 0.375 INCHES NOMINAL
OVERALL LENGTH: 0.624 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 4 RIBBON
THREAD SERIES DESIGNATOR: UNC
TRANSFER RATIO: 20.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN
Related Searches:
157C457H01
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013399110
NSN
5961-01-339-9110
157C457H01
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013399110
NSN
5961-01-339-9110
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN SYSTEMS CORPORATION ELECTRONIC SYSTEMS
Description
III END ITEM IDENTIFICATION: RADAR SET AN/SPS-40B
MATERIAL: PLASTIC POLYAMIDE
MOUNTING FACILITY TYPE AND QUANTITY: 1 BASE SINGLE MOUNTING FACILITY
OVERALL HEIGHT: 0.340 INCHES NOMINAL
OVERALL LENGTH: 4.120 INCHES NOMINAL
OVERALL WIDTH: 0.500 INCHES NOMINAL
STYLE DESIGNATOR: 1C RECTANGULAR PRISM
Related Searches:
36931-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013399720
NSN
5961-01-339-9720
MFG
TRANSISTOR DEVICES INC . DBA TDI POWER
Description
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 80.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
FEATURES PROVIDED: BURN IN AND HERMETICALLY SEALED CASE AND QUALITY ASSURANCE LEVEL TX
FUNCTION FOR WHICH DESIGNED: RECTIFIER
III END ITEM IDENTIFICATION: RADAR SET AN/SPS-40D
INCLOSURE MATERIAL: GLASS OR CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.110 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
OVERALL LENGTH: 0.130 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.900 INCHES MINIMUM AND 1.300 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS AND 500.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
Related Searches:
JANTX1N5419
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013399720
NSN
5961-01-339-9720
JANTX1N5419
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013399720
NSN
5961-01-339-9720
MFG
MICRO USPD INC
Description
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 80.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
FEATURES PROVIDED: BURN IN AND HERMETICALLY SEALED CASE AND QUALITY ASSURANCE LEVEL TX
FUNCTION FOR WHICH DESIGNED: RECTIFIER
III END ITEM IDENTIFICATION: RADAR SET AN/SPS-40D
INCLOSURE MATERIAL: GLASS OR CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.110 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
OVERALL LENGTH: 0.130 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.900 INCHES MINIMUM AND 1.300 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS AND 500.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
Related Searches:
A3023860
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013400328
NSN
5961-01-340-0328
MFG
US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR
Description
III END ITEM IDENTIFICATION: SWITCH ASSEMBLY,SA-2515/TRC-179
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS AMBIENT AIR
OVERALL WIDTH: 0.245 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: GALLIUM PHOSPHIDE
TERMINAL CIRCLE DIAMETER: 0.185 INCHES NOMINAL
TEST DATA DOCUMENT: 96906-MIL-STD-750 STANDARD
Related Searches:
3907926
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013400558
NSN
5961-01-340-0558
MFG
CUMMINS INC.
Description
SEMICONDUCTOR DEVICE,DIODE
