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5961-01-354-3892
20 Products
925214-2B
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013543892
NSN
5961-01-354-3892
925214-2B
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013543892
NSN
5961-01-354-3892
MFG
RAYTHEON COMPANY
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 125.00 MILLIAMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 10000.0 REVERSE VOLTAGE, INSTANTANEOUS
MATERIAL: SILICON
MOUNTING METHOD: TERMINAL
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
OVERALL LENGTH: 1.105 INCHES MINIMUM AND 1.145 INCHES MAXIMUM
OVERALL WIDTH: 0.500 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
SA10758
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013543892
NSN
5961-01-354-3892
SA10758
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013543892
NSN
5961-01-354-3892
MFG
SEMTECH CORPUS CHRISTI.A. DE C.V. REYNOSA FACILITY
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 125.00 MILLIAMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 10000.0 REVERSE VOLTAGE, INSTANTANEOUS
MATERIAL: SILICON
MOUNTING METHOD: TERMINAL
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
OVERALL LENGTH: 1.105 INCHES MINIMUM AND 1.145 INCHES MAXIMUM
OVERALL WIDTH: 0.500 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
SA7285
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013543892
NSN
5961-01-354-3892
SA7285
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013543892
NSN
5961-01-354-3892
MFG
SEMTECH CORPORATION
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 125.00 MILLIAMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 10000.0 REVERSE VOLTAGE, INSTANTANEOUS
MATERIAL: SILICON
MOUNTING METHOD: TERMINAL
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
OVERALL LENGTH: 1.105 INCHES MINIMUM AND 1.145 INCHES MAXIMUM
OVERALL WIDTH: 0.500 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
SEN-B-310-2B
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013543892
NSN
5961-01-354-3892
SEN-B-310-2B
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013543892
NSN
5961-01-354-3892
MFG
RSM ELECTRON POWER INC . DBA RSM SENSITRON SEMICONDUCTOR
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 125.00 MILLIAMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 10000.0 REVERSE VOLTAGE, INSTANTANEOUS
MATERIAL: SILICON
MOUNTING METHOD: TERMINAL
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
OVERALL LENGTH: 1.105 INCHES MINIMUM AND 1.145 INCHES MAXIMUM
OVERALL WIDTH: 0.500 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
PC72264-10
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013543893
NSN
5961-01-354-3893
PC72264-10
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013543893
NSN
5961-01-354-3893
MFG
ROCKWELL COLLINS AEROSPACE & ELECTRONICS INC. DBA RC DISPLAYS SYSTEMS
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 5.50 AMPERES FORWARD CURRENT, AVERAGE AND 200.00 AMPERES PEAK FORWARD SURGE CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 PEAK INVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A8 BRIDGE 3 PHASE
MATERIAL: SILICON
MOUNTING METHOD: PRESS FIT
OVERALL HEIGHT: 0.560 INCHES MAXIMUM
OVERALL LENGTH: 1.250 INCHES NOMINAL
OVERALL WIDTH: 0.550 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 5 TURRET
Related Searches:
RA2987
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013543893
NSN
5961-01-354-3893
RA2987
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013543893
NSN
5961-01-354-3893
MFG
VOLTAGE MULTIPLIERS INC. DBA V M I
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 5.50 AMPERES FORWARD CURRENT, AVERAGE AND 200.00 AMPERES PEAK FORWARD SURGE CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 PEAK INVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A8 BRIDGE 3 PHASE
MATERIAL: SILICON
MOUNTING METHOD: PRESS FIT
OVERALL HEIGHT: 0.560 INCHES MAXIMUM
OVERALL LENGTH: 1.250 INCHES NOMINAL
OVERALL WIDTH: 0.550 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 5 TURRET
Related Searches:
SDA403-10
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013543893
NSN
5961-01-354-3893
SDA403-10
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013543893
NSN
5961-01-354-3893
MFG
SOLID STATE DEVICES INC.
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 5.50 AMPERES FORWARD CURRENT, AVERAGE AND 200.00 AMPERES PEAK FORWARD SURGE CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 PEAK INVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A8 BRIDGE 3 PHASE
MATERIAL: SILICON
MOUNTING METHOD: PRESS FIT
OVERALL HEIGHT: 0.560 INCHES MAXIMUM
OVERALL LENGTH: 1.250 INCHES NOMINAL
OVERALL WIDTH: 0.550 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 5 TURRET
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1854-0908
TRANSISTOR
NSN, MFG P/N
5961013544107
NSN
5961-01-354-4107
MFG
AGILENT TECHNOLOGIES INC. DBA NORTH AMERICAN CONTACT CENTER DIV AGILENT BUSINESS CENTER
Description
CURRENT RATING PER CHARACTERISTIC: 35.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-72
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.220 INCHES NOMINAL
OVERALL LENGTH: 0.190 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
TRANSFER RATIO: 20.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN
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SRF5073
TRANSISTOR
NSN, MFG P/N
5961013544107
NSN
5961-01-354-4107
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 35.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-72
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.220 INCHES NOMINAL
OVERALL LENGTH: 0.190 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
TRANSFER RATIO: 20.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN
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JANTXV1N6464
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013544110
NSN
5961-01-354-4110
JANTXV1N6464
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013544110
NSN
5961-01-354-4110
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 80.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXV1N6464
FEATURES PROVIDED: QUALITY ASSURANCE LEVEL TXV
FUNCTION FOR WHICH DESIGNED: TRANSIENT SUPPRESSOR
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/551
OVERALL DIAMETER: 0.115 INCHES MINIMUM AND 0.140 INCHES MAXIMUM
OVERALL LENGTH: 0.150 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 2.5 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/551 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.900 INCHES MINIMUM AND 1.300 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATI
Related Searches:
JANTXV1N974B-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013544111
NSN
5961-01-354-4111
JANTXV1N974B-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013544111
NSN
5961-01-354-4111
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 3.40 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXV1N974B-1
FEATURES PROVIDED: QUALITY ASSURANCE LEVEL TXV
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-35
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/117
OVERALL DIAMETER: 0.055 INCHES MINIMUM AND 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/117 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMEN
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JANTXV1N6173A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013544112
NSN
5961-01-354-4112
JANTXV1N6173A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013544112
NSN
5961-01-354-4112
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 MILLIAMPERES NOMINAL REVERSE BREAKDOWN CURRENT, DC AND 5.50 AMPERES MAXIMUM PEAK POINT CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXV1N6173A
FEATURES PROVIDED: QUALITY ASSURANCE LEVEL TXV
FUNCTION FOR WHICH DESIGNED: TRANSIENT SUPPRESSOR
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/516
OVERALL DIAMETER: 0.135 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.195 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 3.0 WATTS MAXIMUM REVERSE POWER DISSIPATION, DC
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/516 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-PR
Related Searches:
2N6781
TRANSISTOR
NSN, MFG P/N
5961013545062
NSN
5961-01-354-5062
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
TRANSISTOR
Related Searches:
PIC-626HRT1
TRANSISTOR
NSN, MFG P/N
5961013546489
NSN
5961-01-354-6489
MFG
MICRO USPD INC
Description
TRANSISTOR
Related Searches:
2N6397AA
TRANSISTOR
NSN, MFG P/N
5961013546490
NSN
5961-01-354-6490
MFG
FREESCALE SEMICONDUCTOR INC.
Description
TRANSISTOR
Related Searches:
IRF252
TRANSISTOR
NSN, MFG P/N
5961013546757
NSN
5961-01-354-6757
MFG
FREESCALE SEMICONDUCTOR INC.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-204AE
OVERALL HEIGHT: 0.300 INCHES NOMINAL
OVERALL LENGTH: 1.530 INCHES NOMINAL
OVERALL WIDTH: 1.020 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: POWER FIELD EFFECT TRANSISTOR
Related Searches:
TIP 122
TRANSISTOR
NSN, MFG P/N
5961013546758
NSN
5961-01-354-6758
MFG
AUDICHRON CO
Description
(NON-CORE DATA) SPECIFICATION/STANDARD DATA: 57270-TIP 122 MANUFACTURERS STANDARD
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TIP 127
TRANSISTOR
NSN, MFG P/N
5961013546759
NSN
5961-01-354-6759
MFG
AUDICHRON CO
Description
(NON-CORE DATA) SPECIFICATION/STANDARD DATA: 57270-TIP 127 MANUFACTURERS STANDARD
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831333-011
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013546761
NSN
5961-01-354-6761
831333-011
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013546761
NSN
5961-01-354-6761
MFG
NORTHROP GRUMMAN CORP ELECTRONIC SYSTEMS DEFENSIVE SYSTEM DIV
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
Related Searches:
5D0013-1A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013546765
NSN
5961-01-354-6765
MFG
BOEING COMPANY THE DBA BOEING DIV DEFENSE SPACE & SECURITY - GLOBAL MOBILITY SYSTEMS
Description
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.240 INCHES MAXIMUM
OVERALL LENGTH: 1.250 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 12.000 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 INSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
