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5961-01-285-2173
20 Products
19A116742P2
TRANSISTOR
NSN, MFG P/N
5961012852173
NSN
5961-01-285-2173
MFG
GENERAL ELECTRIC CO MOBILE COMMUNICATIONS BUSINESS DIV
Description
TRANSISTOR
Related Searches:
19A116755P1
TRANSISTOR
NSN, MFG P/N
5961012852174
NSN
5961-01-285-2174
MFG
GENERAL ELECTRIC CO MOBILE COMMUNICATIONS BUSINESS DIV
Description
TRANSISTOR
Related Searches:
19A11681P1
TRANSISTOR
NSN, MFG P/N
5961012852175
NSN
5961-01-285-2175
MFG
GENERAL ELECTRIC CO MOBILE COMMUNICATIONS BUSINESS DIV
Description
TRANSISTOR
Related Searches:
19A116860P1
TRANSISTOR
NSN, MFG P/N
5961012852176
NSN
5961-01-285-2176
MFG
GENERAL ELECTRIC CO MOBILE COMMUNICATIONS BUSINESS DIV
Description
TRANSISTOR
Related Searches:
19A116868P1
TRANSISTOR
NSN, MFG P/N
5961012852177
NSN
5961-01-285-2177
MFG
GENERAL ELECTRIC CO MOBILE COMMUNICATIONS BUSINESS DIV
Description
TRANSISTOR
Related Searches:
19A115250P2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012852178
NSN
5961-01-285-2178
19A115250P2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012852178
NSN
5961-01-285-2178
MFG
GENERAL ELECTRIC CO MOBILE COMMUNICATIONS BUSINESS DIV
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
19A129370G2
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012852194
NSN
5961-01-285-2194
19A129370G2
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012852194
NSN
5961-01-285-2194
MFG
GENERAL ELECTRIC CO MOBILE COMMUNICATIONS BUSINESS DIV
Description
SEMICONDUCTOR DEVICE,THYRISTOR
Related Searches:
000176
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012852425
NSN
5961-01-285-2425
MFG
MILLER ELECTRIC MFG CO
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
860861
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012852426
NSN
5961-01-285-2426
MFG
MICRO USPD INC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
JANTXV2N6782
TRANSISTOR
NSN, MFG P/N
5961012852452
NSN
5961-01-285-2452
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 3.50 AMPERES MAXIMUM DRAIN CURRENT AND 14.00 AMPERES MAXIMUM OFF-STATE CURRENT, PEAK
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXV2N6782
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: DRAIN
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE AND QUALITY ASSURANCE LEVEL TXV
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-205AF
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/556
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.160 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 15.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD D
Related Searches:
MD1820
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012852453
NSN
5961-01-285-2453
MFG
AMERICAN POWER DEVICES INC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
JANTXV1N4996
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012852454
NSN
5961-01-285-2454
JANTXV1N4996
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012852454
NSN
5961-01-285-2454
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 3.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXV1N4996
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND QUALITY ASSURANCE LEVEL TXV
FUNCTION FOR WHICH DESIGNED: VOLTAGE REGULATOR
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/356
OVERALL DIAMETER: 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 2.25 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/356 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SP
Related Searches:
3550934
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961012853460
NSN
5961-01-285-3460
3550934
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961012853460
NSN
5961-01-285-3460
MFG
BOEING COMPANY THE DBA BOEING DIV DEFENSE SPACE & SECURITY - GLOBAL MOBILITY SYSTEMS
Description
MATERIAL: PLASTIC POLYAMIDE
MOUNTING FACILITY TYPE AND QUANTITY: 4 UNTHREADED HOLE SINGLE MOUNTING FACILITY
OVERALL HEIGHT: 0.703 INCHES NOMINAL
OVERALL LENGTH: 2.812 INCHES NOMINAL
OVERALL WIDTH: 0.562 INCHES NOMINAL
STYLE DESIGNATOR: 1C RECTANGULAR PRISM
UNTHREADED MOUNTING HOLE DIAMETER: 0.093 INCHES MINIMUM AND 0.098 INCHES MAXIMUM SINGLE MOUNTING FACILITY
Related Searches:
T324ADP1041
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961012853618
NSN
5961-01-285-3618
T324ADP1041
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961012853618
NSN
5961-01-285-3618
MFG
GENERAL ELECTRIC CO MOBILE COMMUNICATIONS BUSINESS DIV
Description
RECTIFIER,SEMICONDUCTOR DEVICE
Related Searches:
000-25-2617-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012853665
NSN
5961-01-285-3665
000-25-2617-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012853665
NSN
5961-01-285-3665
MFG
DRS SUSTAINMENT SYSTEMS INC. DIV DRS SUSTAINMENT SYSTEMS INC. USE CAGE CODE 98255 FOR CATALOGING.
Description
CURRENT RATING PER CHARACTERISTIC: 12.00 AMPERES NOMINAL AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: MOUNTING HARDWARE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 190.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 1.162 INCHES MINIMUM AND 1.253 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.423 INCHES MINIMUM AND 0.438 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: ITEM DESCRIBED IS MOUNTED TO PLATE 4.25 IN X 1.0 IN X 0.12 IN W/ ELECTRICAL CONNECTION TO ATTACHMENT HOLE.
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 NOMINAL REPETITIVE PEAK REVERSE VOLTAGE AND 200.0 NOMINAL REVERSE VOLTAGE, PEAK
Related Searches:
67082
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961012854689
NSN
5961-01-285-4689
MFG
TALK-A-PHONE CO
Description
MATERIAL: SILICON
Related Searches:
2SD256-Y
TRANSISTOR
NSN, MFG P/N
5961012854690
NSN
5961-01-285-4690
MFG
SONY ELECTRONICS INC.
Description
TRANSISTOR
Related Searches:
8-729-325-67
TRANSISTOR
NSN, MFG P/N
5961012854690
NSN
5961-01-285-4690
MFG
SONY CORPORATION
Description
TRANSISTOR
Related Searches:
XT2108-1001
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012854722
NSN
5961-01-285-4722
XT2108-1001
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012854722
NSN
5961-01-285-4722
MFG
MARCONI ELECTRONIC DEVICES INC
Description
CURRENT RATING PER CHARACTERISTIC: 25.00 AMPERES NOMINAL ON-STATE CURRENT, AVERAGE AND 0.10 AMPERES NOMINAL GATE TRIGGER CURRENT, INSTANTANEOUS
INCLOSURE MATERIAL: METAL
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 37.0 MILLIMETERS NOMINAL
OVERALL WIDTH ACROSS FLATS: 14.0 MILLIMETERS NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 2 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 3.0 MAXIMUM GATE TRIGGER VOLTAGE, DC
Related Searches:
19A134137P3
TRANSISTOR
NSN, MFG P/N
5961012855402
NSN
5961-01-285-5402
MFG
GENERAL ELECTRIC CO MOBILE COMMUNICATIONS BUSINESS DIV
Description
TRANSISTOR
