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5961-01-389-3078
20 Products
924932B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013893078
NSN
5961-01-389-3078
MFG
THALES COMMUNICATIONS INC.
Description
CAPACITANCE RATING IN PICOFARADS: 100.0 NOMINAL
CURRENT RATING PER CHARACTERISTIC: 0.02 MICROAMPERES MAXIMUM REVERSE CURRENT, INSTANTANEOUS
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
VOLTAGE TOLERANCE IN PERCENT: -20.0 TO 20.0
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ZC826
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013893078
NSN
5961-01-389-3078
MFG
BAE SYSTEMS INTEGRATED DEFENSE SOLUTIONS INC.
Description
CAPACITANCE RATING IN PICOFARADS: 100.0 NOMINAL
CURRENT RATING PER CHARACTERISTIC: 0.02 MICROAMPERES MAXIMUM REVERSE CURRENT, INSTANTANEOUS
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
VOLTAGE TOLERANCE IN PERCENT: -20.0 TO 20.0
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NTE2311
TRANSISTOR
NSN, MFG P/N
5961013893081
NSN
5961-01-389-3081
MFG
NTE ELECTRONICS INC SUB OF SOLID STATE INC
Description
CURRENT RATING PER CHARACTERISTIC: 15.00 AMPERES MAXIMUM GATE NON-TRIGGER CURRENT, INSTANTANEOUS
FUNCTION FOR WHICH DESIGNED: SWITCHING
INCLOSURE MATERIAL: CERAMIC AND METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO218
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.740 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.173 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 150.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 PIN
TRANSFER RATIO: 10.0 NOMINAL STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 450.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 7.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
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FBM-Z232
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013893088
NSN
5961-01-389-3088
MFG
VEECO INSTRUMENTS INC LAMBDA DIV
Description
SEMICONDUCTOR DEVICE,DIODE
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NTE399
TRANSISTOR
NSN, MFG P/N
5961013893106
NSN
5961-01-389-3106
MFG
NTE ELECTRONICS INC SUB OF SOLID STATE INC
Description
CURRENT RATING PER CHARACTERISTIC: 0.10 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FUNCTION FOR WHICH DESIGNED: AMPLIFIER
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO92
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.339 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.9 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.512 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 PIN
TRANSFER RATIO: 100.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 300.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 300.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 6.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
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168333
TRANSISTOR
NSN, MFG P/N
5961013893112
NSN
5961-01-389-3112
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DBA NORTHROP GRMMAN NORDEN SYSTEMS DIV NAVAL AND MARINE SYSTEMS DIVISION
Description
CURRENT RATING PER CHARACTERISTIC: 0.40 AMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-39
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.350 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 3.5 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 55.0 MAXIMUM COLLECTOR-TO-EMITTER, RESISTANCE BETWEEN BASE AND EMITTER AND 55.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 3.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC
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SRF5292H
TRANSISTOR
NSN, MFG P/N
5961013893112
NSN
5961-01-389-3112
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 0.40 AMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-39
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.350 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 3.5 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 55.0 MAXIMUM COLLECTOR-TO-EMITTER, RESISTANCE BETWEEN BASE AND EMITTER AND 55.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 3.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC
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FBN-L268
TRANSISTOR
NSN, MFG P/N
5961013893122
NSN
5961-01-389-3122
MFG
VEECO INSTRUMENTS INC LAMBDA DIV
Description
TRANSISTOR
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VG021042-001
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961013893400
NSN
5961-01-389-3400
VG021042-001
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961013893400
NSN
5961-01-389-3400
MFG
BOEING COMPANY THE DBA BOEING DIV DEFENSE SPACE & SECURITY
Description
III END ITEM IDENTIFICATION: AGM 130
MAJOR COMPONENTS: DIODE 17,PRINTED WIRING BOARD 1, COONECTOR 2
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200SPH106
TRANSISTOR
NSN, MFG P/N
5961013893514
NSN
5961-01-389-3514
MFG
SOLITRON DEVICES INC.
Description
III END ITEM IDENTIFICATION: PACER DAWN
SPECIAL FEATURES: SELECTED FROM JANTX2N5416S
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TRANSISTOR
NSN, MFG P/N
5961013893514
NSN
5961-01-389-3514
MFG
HAMILTON SUNDSTRAND CORPORATION
Description
III END ITEM IDENTIFICATION: PACER DAWN
SPECIAL FEATURES: SELECTED FROM JANTX2N5416S
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TRANSISTOR
NSN, MFG P/N
5961013893514
NSN
5961-01-389-3514
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
III END ITEM IDENTIFICATION: PACER DAWN
SPECIAL FEATURES: SELECTED FROM JANTX2N5416S
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446065-0001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013893553
NSN
5961-01-389-3553
446065-0001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013893553
NSN
5961-01-389-3553
MFG
THALES ATM INC.
Description
SEMICONDUCTOR DEVICE,DIODE
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446065-0003
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013893564
NSN
5961-01-389-3564
446065-0003
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013893564
NSN
5961-01-389-3564
MFG
THALES ATM INC.
Description
SEMICONDUCTOR DEVICE,DIODE
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048949-0001
TRANSISTOR
NSN, MFG P/N
5961013893579
NSN
5961-01-389-3579
MFG
THALES ATM INC.
Description
III END ITEM IDENTIFICATION: MARK 20
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TRANSISTOR
NSN, MFG P/N
5961013893579
NSN
5961-01-389-3579
MFG
FREESCALE SEMICONDUCTOR INC.
Description
III END ITEM IDENTIFICATION: MARK 20
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048954-0001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013893580
NSN
5961-01-389-3580
048954-0001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013893580
NSN
5961-01-389-3580
MFG
THALES ATM INC.
Description
SEMICONDUCTOR DEVICE,DIODE
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013893580
NSN
5961-01-389-3580
MFG
MICROSEMI CORP-COLORADO
Description
SEMICONDUCTOR DEVICE,DIODE
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SSR245-13
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013893580
NSN
5961-01-389-3580
MFG
SOLID STATE DEVICES INC.
Description
SEMICONDUCTOR DEVICE,DIODE
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048953-0001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013893587
NSN
5961-01-389-3587
048953-0001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013893587
NSN
5961-01-389-3587
MFG
THALES ATM INC.
Description
SEMICONDUCTOR DEVICE,DIODE
