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5961-01-376-8595
20 Products
SA10093
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013768595
NSN
5961-01-376-8595
MFG
SEMTECH CORPUS CHRISTI.A. DE C.V. REYNOSA FACILITY
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
G000549-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013768596
NSN
5961-01-376-8596
MFG
ITT CORPORATION DBA ITT GILFILLAN
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
91724051
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013769138
NSN
5961-01-376-9138
91724051
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013769138
NSN
5961-01-376-9138
MFG
THALES
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 1000.00 AMPERES PEAK FORWARD SURGE CURRENT AND 1.50 MILLIAMPERES REPETITIVE PEAK REVERSE CURRENT
CIRCUIT CONNECTION STYLE DESIGNATOR: 8 BRIDGE 3 PHASE
MOUNTING METHOD: UNTHREADED HOLE
SPECIAL FEATURES: 5 SCREW INSERT TERM
Related Searches:
ME500806
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013769138
NSN
5961-01-376-9138
ME500806
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013769138
NSN
5961-01-376-9138
MFG
POWEREX INC
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 1000.00 AMPERES PEAK FORWARD SURGE CURRENT AND 1.50 MILLIAMPERES REPETITIVE PEAK REVERSE CURRENT
CIRCUIT CONNECTION STYLE DESIGNATOR: 8 BRIDGE 3 PHASE
MOUNTING METHOD: UNTHREADED HOLE
SPECIAL FEATURES: 5 SCREW INSERT TERM
Related Searches:
853685
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013769292
NSN
5961-01-376-9292
853685
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013769292
NSN
5961-01-376-9292
MFG
NORTHROP GRUMMAN GUIDANCE AND ELECTRONICS COMPANY INC. DBA NAVIGATION SYSTEMS DIVISION DIV NAVIGATION SYSTEMS DIVISION
Description
RECTIFIER,SEMICONDUCTOR DEVICE
Related Searches:
X320011201
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013769322
NSN
5961-01-376-9322
X320011201
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013769322
NSN
5961-01-376-9322
MFG
EPSON AMERICA INC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
X310090100
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013769372
NSN
5961-01-376-9372
X310090100
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013769372
NSN
5961-01-376-9372
MFG
EPSON AMERICA INC
Description
SEMICONDUCTOR DEVICES,UNITIZED
Related Searches:
BC558
TRANSISTOR
NSN, MFG P/N
5961013769397
NSN
5961-01-376-9397
MFG
PHILIPS SEMICONDUCTORS INC
Description
INTERNAL CONFIGURATION: JUNCTION CONTACT
SPECIAL FEATURES: SILICON; TERMINAL MTG; 3 UNINSULATED WIRE LEAD; JUNCTION PATTERN ARRANGEMENT: PNP
Related Searches:
312A3330P1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013770092
NSN
5961-01-377-0092
312A3330P1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013770092
NSN
5961-01-377-0092
MFG
BAE SYSTEMS CONTROLS INC.
Description
COMPONENT NAME AND QUANTITY: 7 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 25.00 MILLIAMPERES MAXIMUM BASE CURRENT, DC AND 500.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
POWER RATING PER CHARACTERISTIC: 1.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 16 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 95.0 MAXIMUM COLLECTOR TO EMITTER SATURATION VOLTAGE ALL TRANSISTOR
Related Searches:
ULS2023R-883
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013770092
NSN
5961-01-377-0092
ULS2023R-883
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013770092
NSN
5961-01-377-0092
MFG
SPRAGUE ELECTRIC CO WORLD HQS
Description
COMPONENT NAME AND QUANTITY: 7 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 25.00 MILLIAMPERES MAXIMUM BASE CURRENT, DC AND 500.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
POWER RATING PER CHARACTERISTIC: 1.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 16 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 95.0 MAXIMUM COLLECTOR TO EMITTER SATURATION VOLTAGE ALL TRANSISTOR
Related Searches:
830026
TRANSISTOR
NSN, MFG P/N
5961013770104
NSN
5961-01-377-0104
MFG
FLUKE CORPORATION
Description
CUBIC MEASURE: 0.002 CUBIC INCHES
CURRENT RATING PER CHARACTERISTIC: 800.00 MILLIAMPERES MAXIMUM DRAIN CURRENT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: SOURCE
FIELD FORCE EFFECT TYPE: ELECTROSTATIC CHARGE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.680 INCHES NOMINAL
OVERALL LENGTH: 0.420 INCHES NOMINAL
OVERALL WIDTH: 0.100 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 4.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GALLIUM ARSENIDE
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 14.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND -7.0 MAXIMUM GATE TO SOURCE VOLTAGE
Related Searches:
ST86-10187
TRANSISTOR
NSN, MFG P/N
5961013770104
NSN
5961-01-377-0104
MFG
AGILENT TECHNOLOGIES INC. DIV SEMICONDUCTOR PRODUCTS GROUP BUSINESS CENTER
Description
CUBIC MEASURE: 0.002 CUBIC INCHES
CURRENT RATING PER CHARACTERISTIC: 800.00 MILLIAMPERES MAXIMUM DRAIN CURRENT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: SOURCE
FIELD FORCE EFFECT TYPE: ELECTROSTATIC CHARGE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.680 INCHES NOMINAL
OVERALL LENGTH: 0.420 INCHES NOMINAL
OVERALL WIDTH: 0.100 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 4.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GALLIUM ARSENIDE
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 14.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND -7.0 MAXIMUM GATE TO SOURCE VOLTAGE
Related Searches:
2808892-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013770683
NSN
5961-01-377-0683
MFG
HONEYWELL INTL INC DEFENSE AVIONICS SYSTEMS
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
UM7302B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013770683
NSN
5961-01-377-0683
MFG
TARGET CORPORATION DBA TARGET
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
199C6763G3
TRANSISTOR
NSN, MFG P/N
5961013770699
NSN
5961-01-377-0699
MFG
BAE SYSTEMS CONTROLS INC.
Description
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: BURN IN
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.250 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TRANSFER RATIO: 200.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 60.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 4.0 MAXIMUM EMITTER TO BASE
Related Searches:
1854-1304
TRANSISTOR
NSN, MFG P/N
5961013770736
NSN
5961-01-377-0736
MFG
AGILENT TECHNOLOGIES INC. DBA NORTH AMERICAN CONTACT CENTER DIV AGILENT BUSINESS CENTER
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
III CUBIC MEASURE: 36.770 CUBIC INCHES
INCLOSURE MATERIAL: METAL OR PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT-DOUBLE EMITTER
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 2.550 INCHES NOMINAL
OVERALL LENGTH: 1.800 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 580.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 3.800 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 20.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 3.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
875745
TRANSISTOR
NSN, MFG P/N
5961013770736
NSN
5961-01-377-0736
MFG
FLUKE CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
III CUBIC MEASURE: 36.770 CUBIC INCHES
INCLOSURE MATERIAL: METAL OR PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT-DOUBLE EMITTER
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 2.550 INCHES NOMINAL
OVERALL LENGTH: 1.800 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 580.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 3.800 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 20.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 3.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
NE85635
TRANSISTOR
NSN, MFG P/N
5961013770736
NSN
5961-01-377-0736
MFG
NEC ELECTRONICS USA INC ELECTRONIC ARRAYS DIV
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
III CUBIC MEASURE: 36.770 CUBIC INCHES
INCLOSURE MATERIAL: METAL OR PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT-DOUBLE EMITTER
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 2.550 INCHES NOMINAL
OVERALL LENGTH: 1.800 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 580.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 3.800 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 20.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 3.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
A3012733-7
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013770916
NSN
5961-01-377-0916
A3012733-7
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013770916
NSN
5961-01-377-0916
MFG
US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR
Description
CAPACITANCE RATING IN PICOFARADS: 52.5 MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM HOLDING CURRENT, DC
FEATURES PROVIDED: BURN IN
III CUBIC MEASURE: 0.010 CUBIC INCHES
INCLOSURE MATERIAL: CERAMIC OR GLASS
MANUFACTURERS CODE: 80063
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MFR SOURCE CONTROLLING REFERENCE: A3012733-7
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.092 INCHES MINIMUM AND 0.104 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 80063-A3012733 MANUFACTURERS SOURCE CONTROL
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 35.0 MINIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
K3137
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013770916
NSN
5961-01-377-0916
MFG
MICRO-METRICS INC. DBA AEROFLEX / METELICS - EAST
Description
CAPACITANCE RATING IN PICOFARADS: 52.5 MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM HOLDING CURRENT, DC
FEATURES PROVIDED: BURN IN
III CUBIC MEASURE: 0.010 CUBIC INCHES
INCLOSURE MATERIAL: CERAMIC OR GLASS
MANUFACTURERS CODE: 80063
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MFR SOURCE CONTROLLING REFERENCE: A3012733-7
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.092 INCHES MINIMUM AND 0.104 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 80063-A3012733 MANUFACTURERS SOURCE CONTROL
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 35.0 MINIMUM BREAKDOWN VOLTAGE, DC
