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5961-01-422-7408
20 Products
135538
TRANSISTOR
NSN, MFG P/N
5961014227408
NSN
5961-01-422-7408
MFG
FLUKE CORPORATION
Description
TRANSISTOR
Related Searches:
1854-0986
TRANSISTOR
NSN, MFG P/N
5961014227408
NSN
5961-01-422-7408
MFG
AGILENT TECHNOLOGIES INC. DBA NORTH AMERICAN CONTACT CENTER DIV AGILENT BUSINESS CENTER
Description
TRANSISTOR
Related Searches:
BFR92
TRANSISTOR
NSN, MFG P/N
5961014227408
NSN
5961-01-422-7408
MFG
PHILIPS COMPONENTS
Description
TRANSISTOR
Related Searches:
137880
TRANSISTOR
NSN, MFG P/N
5961014227412
NSN
5961-01-422-7412
MFG
FLUKE CORPORATION
Description
TRANSISTOR
Related Searches:
BFT92
TRANSISTOR
NSN, MFG P/N
5961014227412
NSN
5961-01-422-7412
MFG
PHILIPS COMPONENTS
Description
TRANSISTOR
Related Searches:
151-5050-00
TRANSISTOR
NSN, MFG P/N
5961014227413
NSN
5961-01-422-7413
MFG
TEKTRONIX INC. DBA TEKTRONIX
Description
TRANSISTOR
Related Searches:
CD38
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961014227660
NSN
5961-01-422-7660
MFG
SEMITRONICS CORP
Description
SEMICONDUCTOR DEVICE,THYRISTOR
Related Searches:
U1483004
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961014227660
NSN
5961-01-422-7660
U1483004
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961014227660
NSN
5961-01-422-7660
MFG
THALES AVIONICS ELECTRICAL SYSTEMS
Description
SEMICONDUCTOR DEVICE,THYRISTOR
Related Searches:
BYT30-400R
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014228102
NSN
5961-01-422-8102
BYT30-400R
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014228102
NSN
5961-01-422-8102
MFG
STMICROELECTRONICS INC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
381620-1
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014228544
NSN
5961-01-422-8544
381620-1
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014228544
NSN
5961-01-422-8544
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 35.00 AMPERES FORWARD CURRENT, NONREPETITIVE, MAXIMUM PEAK TOTAL VALUE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 REPETITIVE PEAK REVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: 1 HALF-WAVE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: TERMINAL
SPECIFICATION/STANDARD DATA: 37695-381620 MANUFACTURERS SPECIFICATION CONTROL
TERMINAL TYPE AND QUANTITY: 2 TAB
Related Searches:
MURS160T3
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014228544
NSN
5961-01-422-8544
MURS160T3
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014228544
NSN
5961-01-422-8544
MFG
FREESCALE SEMICONDUCTOR INC.
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 35.00 AMPERES FORWARD CURRENT, NONREPETITIVE, MAXIMUM PEAK TOTAL VALUE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 REPETITIVE PEAK REVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: 1 HALF-WAVE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: TERMINAL
SPECIFICATION/STANDARD DATA: 37695-381620 MANUFACTURERS SPECIFICATION CONTROL
TERMINAL TYPE AND QUANTITY: 2 TAB
Related Searches:
381792-1
TRANSISTOR
NSN, MFG P/N
5961014228546
NSN
5961-01-422-8546
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 1.00 AMPERES MAXIMUM BASE CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.094 INCHES MAXIMUM
OVERALL LENGTH: 0.409 INCHES MAXIMUM
OVERALL WIDTH: 0.265 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 15.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA: 37695-381792 MANUFACTURERS SPECIFICATION CONTROL
TERMINAL TYPE AND QUANTITY: 3 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 40.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
MJD32
TRANSISTOR
NSN, MFG P/N
5961014228546
NSN
5961-01-422-8546
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 1.00 AMPERES MAXIMUM BASE CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.094 INCHES MAXIMUM
OVERALL LENGTH: 0.409 INCHES MAXIMUM
OVERALL WIDTH: 0.265 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 15.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA: 37695-381792 MANUFACTURERS SPECIFICATION CONTROL
TERMINAL TYPE AND QUANTITY: 3 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 40.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
381737-10
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014228547
NSN
5961-01-422-8547
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
(NON-CORE DATA) DUMMY TERMINAL QUANTITY: 1
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.110 INCHES MINIMUM AND 0.120 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 37695-381737 MANUFACTURERS SPECIFICATION CONTROL
TERMINAL TYPE AND QUANTITY: 2 BONDING PAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 0.9 MAXIMUM FORWARD VOLTAGE, DC
Related Searches:
BZX84C5V6L
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014228547
NSN
5961-01-422-8547
BZX84C5V6L
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014228547
NSN
5961-01-422-8547
MFG
FREESCALE SEMICONDUCTOR INC.
Description
(NON-CORE DATA) DUMMY TERMINAL QUANTITY: 1
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.110 INCHES MINIMUM AND 0.120 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 37695-381737 MANUFACTURERS SPECIFICATION CONTROL
TERMINAL TYPE AND QUANTITY: 2 BONDING PAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 0.9 MAXIMUM FORWARD VOLTAGE, DC
Related Searches:
381737-11
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014228548
NSN
5961-01-422-8548
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
(NON-CORE DATA) DUMMY TERMINAL QUANTITY: 1
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.110 INCHES MINIMUM AND 0.120 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 37695-381737 MANUFACTURERS SPECIFICATION CONTROL
TERMINAL TYPE AND QUANTITY: 3 BONDING PAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 0.9 MAXIMUM FORWARD VOLTAGE, DC
Related Searches:
BZX84C6V2L
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014228548
NSN
5961-01-422-8548
BZX84C6V2L
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014228548
NSN
5961-01-422-8548
MFG
FREESCALE SEMICONDUCTOR INC.
Description
(NON-CORE DATA) DUMMY TERMINAL QUANTITY: 1
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.110 INCHES MINIMUM AND 0.120 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 37695-381737 MANUFACTURERS SPECIFICATION CONTROL
TERMINAL TYPE AND QUANTITY: 3 BONDING PAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 0.9 MAXIMUM FORWARD VOLTAGE, DC
Related Searches:
649239-1
TRANSISTOR
NSN, MFG P/N
5961014228549
NSN
5961-01-422-8549
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
CURRENT RATING PER CHARACTERISTIC: 40.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.0330 INCHES MINIMUM AND 0.0440 INCHES MAXIMUM
OVERALL LENGTH: 0.1102 INCHES MINIMUM AND 0.1197 INCHES MAXIMUM
OVERALL WIDTH: 0.0830 INCHES MINIMUM AND 0.0984 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 37695-649239 MANUFACTURERS SPECIFICATION CONTROL
TERMINAL TYPE AND QUANTITY: 3 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 15.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 30.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 2.5 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
MMBR2857L
TRANSISTOR
NSN, MFG P/N
5961014228549
NSN
5961-01-422-8549
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 40.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.0330 INCHES MINIMUM AND 0.0440 INCHES MAXIMUM
OVERALL LENGTH: 0.1102 INCHES MINIMUM AND 0.1197 INCHES MAXIMUM
OVERALL WIDTH: 0.0830 INCHES MINIMUM AND 0.0984 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 37695-649239 MANUFACTURERS SPECIFICATION CONTROL
TERMINAL TYPE AND QUANTITY: 3 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 15.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 30.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 2.5 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
151-5058-00
TRANSISTOR
NSN, MFG P/N
5961014228739
NSN
5961-01-422-8739
MFG
TEKTRONIX INC. DBA TEKTRONIX
Description
TRANSISTOR
