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5961-01-444-1061

20 Products

386A8028-1

TRANSISTOR

NSN, MFG P/N

5961014441061

NSN

5961-01-444-1061

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386A8028-1

TRANSISTOR

NSN, MFG P/N

5961014441061

NSN

5961-01-444-1061

MFG

EMS DEVELOPMENT CORPORATION

Description

MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 50.8 MILLIMETERS NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 5 PIN

MUR420RL

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014439687

NSN

5961-01-443-9687

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MUR420RL

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014439687

NSN

5961-01-443-9687

MFG

FREESCALE SEMICONDUCTOR INC.

Description

CURRENT RATING PER CHARACTERISTIC: 125.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: TAPE AND REELED, 1500 PER REEL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE

JANTX1N4467US

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014439715

NSN

5961-01-443-9715

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JANTX1N4467US

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014439715

NSN

5961-01-443-9715

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N4467US
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/406
OVERALL LENGTH: 0.200 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/406 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 FERRULE
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12.0 MAXIMUM NOMINAL REGULATOR VOLTAGE

MB156-ND

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961014439744

NSN

5961-01-443-9744

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MB156-ND

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961014439744

NSN

5961-01-443-9744

MFG

DIGI-KEY CORPORATION

07-030-004-00

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014439745

NSN

5961-01-443-9745

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07-030-004-00

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014439745

NSN

5961-01-443-9745

MFG

POWER TEN

07-040-019-00

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961014439746

NSN

5961-01-443-9746

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07-040-019-00

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961014439746

NSN

5961-01-443-9746

MFG

POWER TEN

07-060-000-14

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014439748

NSN

5961-01-443-9748

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07-060-000-14

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014439748

NSN

5961-01-443-9748

MFG

POWER TEN

07-080-002-00

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014439750

NSN

5961-01-443-9750

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07-080-002-00

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014439750

NSN

5961-01-443-9750

MFG

POWER TEN

6259660-1

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961014439863

NSN

5961-01-443-9863

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6259660-1

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961014439863

NSN

5961-01-443-9863

MFG

POWEREX INC

Description

MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 10.0 MAXIMUM GATE SUPPLY VOLTAGE ALL SEMICONDUCTOR

1901-1131

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014440679

NSN

5961-01-444-0679

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1901-1131

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014440679

NSN

5961-01-444-0679

MFG

AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES

Description

DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N5712-1
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/444
OVERALL LENGTH: 0.170 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/445 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 16.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE

1979948

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014440679

NSN

5961-01-444-0679

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1979948

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014440679

NSN

5961-01-444-0679

MFG

NORTHROP GRUMMAN SYSTEMS CORPORATION

Description

DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N5712-1
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/444
OVERALL LENGTH: 0.170 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/445 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 16.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE

5082-6230

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014440679

NSN

5961-01-444-0679

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5082-6230

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014440679

NSN

5961-01-444-0679

MFG

HEWLETT PACKARD CO

Description

DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N5712-1
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/444
OVERALL LENGTH: 0.170 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/445 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 16.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE

50B13-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014440679

NSN

5961-01-444-0679

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50B13-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014440679

NSN

5961-01-444-0679

MFG

SENCORE INC.

Description

DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N5712-1
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/444
OVERALL LENGTH: 0.170 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/445 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 16.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE

720649-4

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014440679

NSN

5961-01-444-0679

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720649-4

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014440679

NSN

5961-01-444-0679

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N5712-1
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/444
OVERALL LENGTH: 0.170 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/445 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 16.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE

7906714-01

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014440679

NSN

5961-01-444-0679

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7906714-01

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014440679

NSN

5961-01-444-0679

MFG

LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MS2

Description

DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N5712-1
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/444
OVERALL LENGTH: 0.170 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/445 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 16.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE

DSAO-02810

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014440679

NSN

5961-01-444-0679

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DSAO-02810

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014440679

NSN

5961-01-444-0679

MFG

GIGA-TRONICS INCORPORATED

Description

DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N5712-1
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/444
OVERALL LENGTH: 0.170 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/445 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 16.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE

JANTX1N5712

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014440679

NSN

5961-01-444-0679

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JANTX1N5712

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014440679

NSN

5961-01-444-0679

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N5712-1
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/444
OVERALL LENGTH: 0.170 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/445 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 16.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE

91509216

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014440899

NSN

5961-01-444-0899

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91509216

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014440899

NSN

5961-01-444-0899

MFG

THALES

HPND4002

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014440899

NSN

5961-01-444-0899

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HPND4002

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014440899

NSN

5961-01-444-0899

MFG

HEWLETT PACKARD CO

ND4002

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014440899

NSN

5961-01-444-0899

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ND4002

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014440899

NSN

5961-01-444-0899

MFG

AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES