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5961-01-475-9198
20 Products
CTJ420E005
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014759198
NSN
5961-01-475-9198
CTJ420E005
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014759198
NSN
5961-01-475-9198
MFG
DEUTSCH ENGINEERED CONNECTING DEVICES INC DBA DEFENSE AEROSPACE OPERATIONS DIV DEFENSE AEROSPACE OPERATIONS
Description
COMPONENT NAME AND QUANTITY: 5 SEMICONDUCTOR DEVICE DIODE
OVERALL HEIGHT: 1.170 INCHES MAXIMUM
OVERALL LENGTH: 0.990 INCHES MINIMUM AND 1.050 INCHES MAXIMUM
OVERALL WIDTH: 0.557 INCHES MINIMUM AND 0.687 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
TERMINAL TYPE AND QUANTITY: 10 UNINSULATED WIRE LEAD
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EGL41B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014759254
NSN
5961-01-475-9254
MFG
JACO ELECTRONICS INC.
Description
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE
III END ITEM IDENTIFICATION: 789598(07342),PRINTER CONTROL UNIT,UGC-143B(V);RP0361/UGC-143B(V),PRINTER UNIT
SPECIAL FEATURES: DIODE,SMD
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890309
TRANSISTOR
NSN, MFG P/N
5961014759255
NSN
5961-01-475-9255
MFG
NAI TECHNOLOGIES INC
Description
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE
III END ITEM IDENTIFICATION: 789598(07342),PRINTER CONTROL UNIT,UGC-143B(V);RP0361/UGC-143B(V),PRINTER UNIT
Related Searches:
BU911
TRANSISTOR
NSN, MFG P/N
5961014759255
NSN
5961-01-475-9255
MFG
STMICROELECTRONICS INC
Description
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE
III END ITEM IDENTIFICATION: 789598(07342),PRINTER CONTROL UNIT,UGC-143B(V);RP0361/UGC-143B(V),PRINTER UNIT
Related Searches:
1SMB5914BT3
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014759259
NSN
5961-01-475-9259
1SMB5914BT3
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014759259
NSN
5961-01-475-9259
MFG
FREESCALE SEMICONDUCTOR INC.
Description
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE
III END ITEM IDENTIFICATION: 789598(07342),PRINTER CONTROL UNIT,UGC-143B(V);RP0361/UGC-143B(V),PRINTER UNIT
SPECIAL FEATURES: DIODE,ZENER
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890311
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014759259
NSN
5961-01-475-9259
MFG
NAI TECHNOLOGIES INC
Description
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE
III END ITEM IDENTIFICATION: 789598(07342),PRINTER CONTROL UNIT,UGC-143B(V);RP0361/UGC-143B(V),PRINTER UNIT
SPECIAL FEATURES: DIODE,ZENER
Related Searches:
889759
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014759260
NSN
5961-01-475-9260
MFG
NAI TECHNOLOGIES INC
Description
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE
III END ITEM IDENTIFICATION: 789598(07342),PRINTER CONTROL UNIT,UGC-143B(V);RP0361/UGC-143B(V),PRINTER UNIT
SPECIAL FEATURES: DIODE,ZENER
Related Searches:
GLL4747
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014759260
NSN
5961-01-475-9260
MFG
GENERAL SEMICONDUCTOR INC
Description
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE
III END ITEM IDENTIFICATION: 789598(07342),PRINTER CONTROL UNIT,UGC-143B(V);RP0361/UGC-143B(V),PRINTER UNIT
SPECIAL FEATURES: DIODE,ZENER
Related Searches:
SBMC1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014759791
NSN
5961-01-475-9791
MFG
SEMTECH CORPUS CHRISTI.A. DE C.V. REYNOSA FACILITY
Description
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.660 INCHES MINIMUM AND 0.700 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
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1296H82G01
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961014760372
NSN
5961-01-476-0372
1296H82G01
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961014760372
NSN
5961-01-476-0372
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DBA ES POWER CONTROL SYSTEMS
Description
CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: 1296H82GP1(MOD)
MANUFACTURERS CODE: 04804
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: MATERIAL WILL BE IN ACCORDANCE WITH NAVICP ACTIVITY HX QUALITY CONTROL, MANUFACTURING AND TESTING SPECIFICATIONS
THE MANUFACTURERS DATA:
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1713912-58
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961014760398
NSN
5961-01-476-0398
1713912-58
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961014760398
NSN
5961-01-476-0398
MFG
HONEYWELL INTL DBA HONEYWELL DIV BUSINESS AND GENERAL AVIATION
Description
III END ITEM IDENTIFICATION: RCA PRIMUS 40 WXD WEATHER RADAR 1B8029050
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: CONTROL RECTIFIER WITH MOUNTING
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GBPC3504
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014760703
NSN
5961-01-476-0703
GBPC3504
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014760703
NSN
5961-01-476-0703
MFG
GENERAL SEMICONDUCTOR INC
Description
III END ITEM IDENTIFICATION: HYDRAULIC DAVIT
SPECIAL FEATURES: 35.0 AMPS;400 VOLTS;BRIDGE
Related Searches:
28A0012
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014760816
NSN
5961-01-476-0816
28A0012
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014760816
NSN
5961-01-476-0816
MFG
U S DEPT OF TRANSPORTATION FEDERAL AVIATION ADMINISTRATION
Description
III END ITEM IDENTIFICATION: APPROACH LIGHT SEQUENCE FLASHER (ALSF)
SPECIAL FEATURES: SCR BLOCK, SILICONE CONTROL RECTIFIER BLOCK
Related Searches:
28A0015
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014760816
NSN
5961-01-476-0816
28A0015
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014760816
NSN
5961-01-476-0816
MFG
SIEMENS ENERGY & AUTOMATION INC. DBA SIEMENS AIRFIELD SOLUTIONS DIV SIEMENS ENERGY & AUTOMATION DBA SIEMENS AIRFIELD SOLUTIONS
Description
III END ITEM IDENTIFICATION: APPROACH LIGHT SEQUENCE FLASHER (ALSF)
SPECIAL FEATURES: SCR BLOCK, SILICONE CONTROL RECTIFIER BLOCK
Related Searches:
207825
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961014761167
NSN
5961-01-476-1167
207825
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961014761167
NSN
5961-01-476-1167
MFG
HDL RESEARCH LAB INC
Description
III END ITEM IDENTIFICATION: E/IFSCM 0000000000000
Related Searches:
370-1002021-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014761191
NSN
5961-01-476-1191
370-1002021-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014761191
NSN
5961-01-476-1191
MFG
NAI TECHNOLOGIES INC
Description
III END ITEM IDENTIFICATION: TT-833/UGC-143B(V), KEYBOARD
Related Searches:
JAN1N747A-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014761749
NSN
5961-01-476-1749
JAN1N747A-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014761749
NSN
5961-01-476-1749
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N747A-1
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-S-19500/127
OVERALL DIAMETER: 1.4 MILLIMETERS MINIMUM AND 2.3 MILLIMETERS MAXIMUM
OVERALL LENGTH: 3.1 MILLIMETERS MINIMUM AND 5.1 MILLIMETERS MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 25.4 MILLIMETERS MINIMUM AND 38.1 MILLIMETERS MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3.6 MAXIMUM NOMINAL REGULATOR VOLTAGE AND 1.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
Related Searches:
207920
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961014761989
NSN
5961-01-476-1989
207920
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961014761989
NSN
5961-01-476-1989
MFG
HDL RESEARCH LAB INC
Description
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
Related Searches:
SZZD2.8-20-29.1-10
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014762269
NSN
5961-01-476-2269
SZZD2.8-20-29.1-10
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014762269
NSN
5961-01-476-2269
MFG
SUSSEX SEMICONDUCTOR INC
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 MILLIAMPERES NOMINAL ON-STATE CURRENT, INSTANTANEOUS
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: PLATING GOLD
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
SPECIAL FEATURES: DIODE IS A 5 AMP, 580 WATT, BIPOLAR TRANSIENT SUPPRESSOR, DUAL DIE; EACH DIE IS GLASS PASSIVATED; METALIZATION MATERIAL IS NICKEL AND GOLD PLATED (NI-NI-AU); STANDOFF VOLTAGE (VSO) 16.20 VOLTS; MAX. REVERSE LEAKAGE (IR) AT VSO IS 1 MICROAMP; MAX. CLAMPING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 18.0 MINIMUM REVERSE BREAKDOWN VOLTAGE, INSTANTANEOUS AND 22.0 MAXIMUM REVERSE BREAKDOWN VOLTAGE, INSTANTANEOUS
~1: VOLTAGE (VCL) 29.1 VOLTS AT PEAK PULSE CURRENT (IPP) 17.5 AMPS
Related Searches:
SZZD2.8-6.8-10.8-10
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014762270
NSN
5961-01-476-2270
SZZD2.8-6.8-10.8-10
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014762270
NSN
5961-01-476-2270
MFG
SUSSEX SEMICONDUCTOR INC
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES NOMINAL ON-STATE CURRENT, INSTANTANEOUS
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: PLATING GOLD
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
SPECIAL FEATURES: DIODE IS A 5 AMP - 580 WATT BIPOLAR TRANSIENT SUPPRESSOR, DUAL DIE; EACH DIE IS GLASS PASSIVATED; METALIZATION MATERIAL IS NICKEL AND GOLD PLATED (NI-NI-AU); STANDOFF VOLTAGE (VSO) 5.50 VOLTS; MAX. REVERSE LEAKAGE (IR) AT VSO IS 600 MICROAMPS (LIMIT IS
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.12 MINIMUM REVERSE BREAKDOWN VOLTAGE, INSTANTANEOUS AND 7.48 MAXIMUM REVERSE BREAKDOWN VOLTAGE, INSTANTANEOUS
~1: DOUBLED WHEN REVERSE BREAKDOWN VOLTAGE IS 10 VOLTS OR LESS); MAX. CLAMPING VOLTAGE (VCL) 10.8 VOLTS AT PEAK PULSE CURRENT (IPP) 53.0 AMPS
