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5961-01-478-2483
20 Products
60S10
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014782483
NSN
5961-01-478-2483
MFG
MICROSEMI CORP.-SCOTTSDALE DBA MICROSEMI
Description
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.372 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: CASE MOLDED PLASTIC; TERMINALS AXIAL LEADS, SOLDERABLE; POLARITY, COLOR BAND DENOTES CATHODE; 1000 VOLTS, 6 AMPS
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
IRFZ48
TRANSISTOR
NSN, MFG P/N
5961014782674
NSN
5961-01-478-2674
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: T0-220AB
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
Related Searches:
2N6080
TRANSISTOR
NSN, MFG P/N
5961014784342
NSN
5961-01-478-4342
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM BASE CURRENT, DC AND 1000.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC AND 0.25 MILLIAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, EMITTER OPEN
POWER RATING PER CHARACTERISTIC: 12.0 WATTS MAXIMUM OFF-STATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON ALLOY
SPECIAL FEATURES: MINIMUM DERATE J TO C 68.0 MILLIWATTS; ON-STATE CURRENT 50 MEGAHERTZ; PART NAME ASSIGNED BY CONTROLLING AGENCY - SILICON NPN POWER TRANSISTOR
TRANSFER RATIO: 5.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 38.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 18.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 4.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
7575614-003
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014784548
NSN
5961-01-478-4548
7575614-003
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014784548
NSN
5961-01-478-4548
MFG
GENERAL DYNAMICS LAND SYSTEMS INC . DBA WOODBRIDGE TECHNICAL CENTER DIV GENERAL DYNAMICS LAND SYSTEMS INC-WOODBRIDGE TECHNICAL CENTE
Description
III END ITEM IDENTIFICATION: AC130U TGMS
Related Searches:
SM1715
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014784548
NSN
5961-01-478-4548
MFG
MICROSEMI CORPORATION
Description
III END ITEM IDENTIFICATION: AC130U TGMS
Related Searches:
GBPC1508
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014785842
NSN
5961-01-478-5842
GBPC1508
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014785842
NSN
5961-01-478-5842
MFG
GENERAL SEMICONDUCTOR INC
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.940 INCHES MAXIMUM
OVERALL LENGTH: 1.135 INCHES MAXIMUM
OVERALL WIDTH: 1.135 INCHES MAXIMUM
SPECIAL FEATURES: MAX PEAK REVERSE VOLTAGE 800 V; MAX INSTANTANEOUS FWD V DROP EA LEG 7.5 AMP; AV IF 15 AMP
TERMINAL TYPE AND QUANTITY: 4 TERMINAL LUG
Related Searches:
12961055
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961014786087
NSN
5961-01-478-6087
12961055
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961014786087
NSN
5961-01-478-6087
MFG
U S ARMY ARMAMENT RESEARCH & DEVELOPMENT COMMAND
Description
III END ITEM IDENTIFICATION: TANK,ABRAMS M-1
MANUFACTURERS CODE: 19200
MFR SOURCE CONTROLLING REFERENCE: 12961055
MOUNTING METHOD: UNTHREADED HOLE
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
OVERALL HEIGHT: 7.180 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 1.062 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: HARDNESS CRITICAL PROCESS
Related Searches:
2N2025
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961014786087
NSN
5961-01-478-6087
2N2025
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961014786087
NSN
5961-01-478-6087
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
III END ITEM IDENTIFICATION: TANK,ABRAMS M-1
MANUFACTURERS CODE: 19200
MFR SOURCE CONTROLLING REFERENCE: 12961055
MOUNTING METHOD: UNTHREADED HOLE
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
OVERALL HEIGHT: 7.180 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 1.062 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: HARDNESS CRITICAL PROCESS
Related Searches:
70C10B-IL
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961014786087
NSN
5961-01-478-6087
70C10B-IL
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961014786087
NSN
5961-01-478-6087
MFG
MICROSEMI CORP-COLORADO
Description
III END ITEM IDENTIFICATION: TANK,ABRAMS M-1
MANUFACTURERS CODE: 19200
MFR SOURCE CONTROLLING REFERENCE: 12961055
MOUNTING METHOD: UNTHREADED HOLE
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
OVERALL HEIGHT: 7.180 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 1.062 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: HARDNESS CRITICAL PROCESS
Related Searches:
99162891
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014786235
NSN
5961-01-478-6235
MFG
THALES
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
SMCJ5.0A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014786235
NSN
5961-01-478-6235
MFG
GENERAL SEMICONDUCTOR INC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
SMCJ15A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014786236
NSN
5961-01-478-6236
MFG
GENERAL SEMICONDUCTOR INC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
019-005354
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961014787616
NSN
5961-01-478-7616
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV MULTIPLE
Description
CAPACITANCE RATING IN PICOFARADS: 0.05 MINIMUM AND 0.06 MAXIMUM
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 550.00 MILLIAMPERES MINIMUM FORWARD CURRENT, DC AND 700.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: PRESS FIT
OVERALL HEIGHT: 0.010 MILLIMETERS MAXIMUM
OVERALL LENGTH: 0.036 MILLIMETERS MAXIMUM
OVERALL WIDTH: 0.002 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM FORWARD POWER DISSIPATION, AVERAGE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.013 MILLIMETERS MAXIMUM
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 9.0 MINIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
DMJ2778-99
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961014787616
NSN
5961-01-478-7616
MFG
SKYWORKS SOLUTIONS INC.
Description
CAPACITANCE RATING IN PICOFARADS: 0.05 MINIMUM AND 0.06 MAXIMUM
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 550.00 MILLIAMPERES MINIMUM FORWARD CURRENT, DC AND 700.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: PRESS FIT
OVERALL HEIGHT: 0.010 MILLIMETERS MAXIMUM
OVERALL LENGTH: 0.036 MILLIMETERS MAXIMUM
OVERALL WIDTH: 0.002 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM FORWARD POWER DISSIPATION, AVERAGE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.013 MILLIMETERS MAXIMUM
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 9.0 MINIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
E288PC17
TRANSISTOR
NSN, MFG P/N
5961014788489
NSN
5961-01-478-8489
MFG
PICKARD AND BURNS INC
Description
(NON-CORE DATA) DEPARTURE FROM CITED DOCUMENT: MATERIAL WILL BE IN ACCORDANCE WITH NAVICP ACTIVITY HX QUALITY CONTROL, MANUFACTURING AND TESTING SPECIFICATIONS
CRITICALITY CODE JUSTIFICATION: ZZZW
MANUFACTURERS CODE: 81349
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN2N539A
Related Searches:
JAN2N539A
TRANSISTOR
NSN, MFG P/N
5961014788489
NSN
5961-01-478-8489
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
(NON-CORE DATA) DEPARTURE FROM CITED DOCUMENT: MATERIAL WILL BE IN ACCORDANCE WITH NAVICP ACTIVITY HX QUALITY CONTROL, MANUFACTURING AND TESTING SPECIFICATIONS
CRITICALITY CODE JUSTIFICATION: ZZZW
MANUFACTURERS CODE: 81349
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN2N539A
Related Searches:
2N1309
TRANSISTOR
NSN, MFG P/N
5961014788490
NSN
5961-01-478-8490
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
(NON-CORE DATA) DEPARTURE FROM CITED DOCUMENT: MATERIAL WILL BE IN ACCORDANCE WITH NAVICP ACTIVITY HX QUALITY CONTROL, MANUFACTURING AND TESTING SPECIFICATIONS
CRITICALITY CODE JUSTIFICATION: ZZZW
MANUFACTURERS CODE: 81349
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: 2N1309
SPEC/STD CONTROLLING DATA:
Related Searches:
62410-026PC10
TRANSISTOR
NSN, MFG P/N
5961014788490
NSN
5961-01-478-8490
MFG
DYNALEC CORPORATION
Description
(NON-CORE DATA) DEPARTURE FROM CITED DOCUMENT: MATERIAL WILL BE IN ACCORDANCE WITH NAVICP ACTIVITY HX QUALITY CONTROL, MANUFACTURING AND TESTING SPECIFICATIONS
CRITICALITY CODE JUSTIFICATION: ZZZW
MANUFACTURERS CODE: 81349
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: 2N1309
SPEC/STD CONTROLLING DATA:
Related Searches:
35-2038
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014788525
NSN
5961-01-478-8525
MFG
DRS POWER & CONTROL TECHNOLOGIES INC.
Description
CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: 35-2038
MANUFACTURERS CODE: 27192
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: MATERIAL WILL BE IN ACCORDANCE WITH NAVICP ACTIVITY HX QUALITY CONTROL, MANUFACTURING AND TESTING SPECIFICATIONS
THE MANUFACTURERS DATA:
Related Searches:
12467085
TRANSISTOR
NSN, MFG P/N
5961014788778
NSN
5961-01-478-8778
MFG
U S ARMY ARMAMENT RESEARCH & DEVELOPMENT COMMAND
Description
CURRENT RATING PER CHARACTERISTIC: 600.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 50-HZ CYCLE
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: BASE
III END ITEM IDENTIFICATION: M-1 ABRAMS TANK
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 19200
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MFR SOURCE CONTROLLING REFERENCE: 12467085
MOUNTING METHOD: TERMINAL
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
OVERALL HEIGHT: 1.110 MILLIMETERS MAXIMUM
OVERALL LENGTH: 3.050 MILLIMETERS MAXIMUM
OVERALL WIDTH: 2.500 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 330.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 19200-12467085 MANUFACTURERS SOURCE CONTROL
TERMINAL LENGTH: 1.110 MILLIMETERS MAXIMUM
TERMINAL TYPE AND QUANTITY:
