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5961-01-500-5378
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1.5KE400CA
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015005378
NSN
5961-01-500-5378
1.5KE400CA
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015005378
NSN
5961-01-500-5378
MFG
CRYDOM CORP
Description
CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: 1.5KE400CA
MANUFACTURERS CODE: 14704
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: MATERIAL WILL BE IN ACCORDANCE WITH NAVICP ACTIVITY HX QUALITY CONTROL, MANUFACTURING AND TESTING SPECIFICATIONS
THE MANUFACTURERS DATA:
Related Searches:
58-7498PC27
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015007928
NSN
5961-01-500-7928
58-7498PC27
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015007928
NSN
5961-01-500-7928
MFG
DRS POWER & CONTROL TECHNOLOGIES INC.
Description
CRITICALITY CODE JUSTIFICATION: FEAT
MANUFACTURERS CODE: 81349
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N6642U
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: MATERIAL WILL BE IN ACCORDANCE WITH NAVICP ACTIVITY HX QUALITY CONTROL, MANUFACTURING AND TESTING SPECIFICATIONS
Related Searches:
JANTX1N6642U
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015007928
NSN
5961-01-500-7928
JANTX1N6642U
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015007928
NSN
5961-01-500-7928
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CRITICALITY CODE JUSTIFICATION: FEAT
MANUFACTURERS CODE: 81349
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N6642U
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: MATERIAL WILL BE IN ACCORDANCE WITH NAVICP ACTIVITY HX QUALITY CONTROL, MANUFACTURING AND TESTING SPECIFICATIONS
Related Searches:
20350-001
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961015008319
NSN
5961-01-500-8319
20350-001
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961015008319
NSN
5961-01-500-8319
MFG
DOVER DIVERSIFIED DE INC.
Description
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
Related Searches:
20350-001
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961015008322
NSN
5961-01-500-8322
20350-001
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961015008322
NSN
5961-01-500-8322
MFG
DOVER DIVERSIFIED DE INC.
Description
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
Related Searches:
58-6507PC13
TRANSISTOR
NSN, MFG P/N
5961015008364
NSN
5961-01-500-8364
MFG
DRS POWER & CONTROL TECHNOLOGIES INC.
Description
(NON-CORE DATA) DEPARTURE FROM CITED DOCUMENT: MATERIAL WILL BE IN ACCORDANCE WITH NAVICP ACTIVITY HX QUALITY CONTROL, MANUFACTURING AND TESTING SPECIFICATIONS
CRITICALITY CODE JUSTIFICATION: ZZZW
MANUFACTURERS CODE: 81349
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX2N7224
SPEC/STD CONTROLLING DATA:
Related Searches:
JANTX2N7224
TRANSISTOR
NSN, MFG P/N
5961015008364
NSN
5961-01-500-8364
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
(NON-CORE DATA) DEPARTURE FROM CITED DOCUMENT: MATERIAL WILL BE IN ACCORDANCE WITH NAVICP ACTIVITY HX QUALITY CONTROL, MANUFACTURING AND TESTING SPECIFICATIONS
CRITICALITY CODE JUSTIFICATION: ZZZW
MANUFACTURERS CODE: 81349
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX2N7224
SPEC/STD CONTROLLING DATA:
Related Searches:
312A5077P3
TRANSISTOR
NSN, MFG P/N
5961015008625
NSN
5961-01-500-8625
MFG
BAE SYSTEMS CONTROLS INC.
Description
CRITICALITY CODE JUSTIFICATION: FEATG
CURRENT RATING PER CHARACTERISTIC: 100.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 20.00 AMPERES MAXIMUM BASE CURRENT, DC
III END ITEM IDENTIFICATION: C-17A AIRCRAFT
INCLOSURE MATERIAL: METAL
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.450 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 175.0 WATTS MAXIMUM ON-STATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: REQUESTED NAME TRANSISTOR,POWER,SILCON,PNP;CRITICAL TECHNOLOGY ITEM
TERMINAL TYPE AND QUANTITY: 2 PIN AND 2 UNTHREADED HOLE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 180.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 90.0 NOMINAL GATE TO SOURCE THRESHOLD VOLTAGE AND 6.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
SCA15619/1
TRANSISTOR
NSN, MFG P/N
5961015008625
NSN
5961-01-500-8625
MFG
SEMICOA DBA SEMICOA SEMI CONDUCTORS
Description
CRITICALITY CODE JUSTIFICATION: FEATG
CURRENT RATING PER CHARACTERISTIC: 100.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 20.00 AMPERES MAXIMUM BASE CURRENT, DC
III END ITEM IDENTIFICATION: C-17A AIRCRAFT
INCLOSURE MATERIAL: METAL
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.450 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 175.0 WATTS MAXIMUM ON-STATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: REQUESTED NAME TRANSISTOR,POWER,SILCON,PNP;CRITICAL TECHNOLOGY ITEM
TERMINAL TYPE AND QUANTITY: 2 PIN AND 2 UNTHREADED HOLE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 180.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 90.0 NOMINAL GATE TO SOURCE THRESHOLD VOLTAGE AND 6.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
356A7251P2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015009655
NSN
5961-01-500-9655
356A7251P2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015009655
NSN
5961-01-500-9655
MFG
BAE SYSTEMS CONTROLS INC.
Description
CURRENT RATING PER CHARACTERISTIC: 25.00 AMPERES MAXIMUM FORWARD CURRENT, MAXIMUM PEAK TOTAL VALUE AND 600.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
III END ITEM IDENTIFICATION: C-17A AIRCRAFT
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 0.948 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.437 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: REQUEST NAME SEMICONDUCTOR,DIODE SCHOTTKY BARRIER FAST RECOVERY, THIS ITEM IS SELECTED FROM JANTX1N6391 TO BEALTERED FOR SIZE
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE AND 54.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE AND 4
Related Searches:
MMBTA56L
TRANSISTOR
NSN, MFG P/N
5961015010318
NSN
5961-01-501-0318
MFG
FREESCALE SEMICONDUCTOR INC.
Description
III END ITEM IDENTIFICATION: 6625-01-432-8368
OVERALL HEIGHT: 0.0350 INCHES MINIMUM AND 0.0440 INCHES MAXIMUM
OVERALL LENGTH: 0.1102 INCHES MINIMUM AND 0.1197 INCHES MAXIMUM
OVERALL WIDTH: 0.0477 INCHES MINIMUM AND 0.0551 INCHES MAXIMUM
Related Searches:
MMBTA06L
TRANSISTOR
NSN, MFG P/N
5961015010601
NSN
5961-01-501-0601
MFG
FREESCALE SEMICONDUCTOR INC.
Description
III END ITEM IDENTIFICATION: 6625-01-432-8368
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 556.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 3
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.0350 INCHES MINIMUM AND 0.0440 INCHES MAXIMUM
OVERALL LENGTH: 0.1102 INCHES MINIMUM AND 0.1197 INCHES MAXIMUM
OVERALL WIDTH: 0.0830 INCHES MINIMUM AND 0.1039 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 225.0 MILLIWATTS MAXIMUM OFF-STATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.0140 INCHES MINIMUM AND 0.0285 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG
TRANSFER RATIO: 100.0 MINIMUM SMALL-SIGNAL SHORT-CIRCUIT FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR TO EMITTER, SUSTAINED AND 80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR TO EMITTER, SUSTAINED
Related Searches:
5KP110A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015013014
NSN
5961-01-501-3014
MFG
GENERAL SEMICONDUCTOR INC
Description
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.340 INCHES MINIMUM AND 0.360 INCHES MAXIMUM
OVERALL LENGTH: 2.340 INCHES MINIMUM AND 2.360 INCHES MAXIMUM
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 122.0 MINIMUM BREAKDOWN VOLTAGE, INSTANTANEOUS AND 135.0 MAXIMUM BREAKDOWN VOLTAGE, INSTANTANEOUS
Related Searches:
IRFY240C
TRANSISTOR
NSN, MFG P/N
5961015013522
NSN
5961-01-501-3522
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
SPECIAL FEATURES: SIMPLE DRIVE REQUIRMENTS; EASE OFPARALLELING; HERMETICALLY SEALED; ELECALLY ISOLATED; CERAMIC EYELETS
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 NOMINAL REVERSE VOLTAGE, DC
Related Searches:
JANTX1N5302-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015013615
NSN
5961-01-501-3615
JANTX1N5302-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015013615
NSN
5961-01-501-3615
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 1.60 AMPERES MAXIMUM PEAK POINT CURRENT AND 200.00 MILLIAMPERES MAXIMUM REVERSE CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N5302-1
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: VOLTAGE REGULATOR
III END ITEM IDENTIFICATION: C-17 AIRCRAFT
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/463
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 600.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: METALLURGICALLY BONDED LEADS;DRAWING ITEM NAME SEMICONDUCTOR DEVICE,DIODE,SILICON,CURRENT REGULATOR; JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL LENGTH: 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2
Related Searches:
83CNQ100A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015014451
NSN
5961-01-501-4451
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
SPECIAL FEATURES: HIGH PURITY; HIGH TEMPERATURE EPOXY ENCAPSULATION FOR ENHANCED MECHANICAL STRENGTH AND MOISTURE RESISTANCE; LOW FORWARD VOLTAGE DROP; UP TO 175 DEGREES CELCIUS JUNCTION TEMPERATURE; GUARD RING FOR ENHANCED RUGGEDNESS AND LONG TERM RELIABILITY
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 NOMINAL REVERSE VOLTAGE, DC
Related Searches:
1N4583A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015016016
NSN
5961-01-501-6016
MFG
MICROSEMI CORP.-SCOTTSDALE DBA MICROSEMI
Description
CURRENT RATING PER CHARACTERISTIC: 4.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: RADIATION HARDENED
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
OVERALL DIAMETER: 0.313 INCHES MAXIMUM
OVERALL LENGTH: 1.125 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 99167-927A495 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.4 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
927A495-9
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015016016
NSN
5961-01-501-6016
MFG
HAMILTON SUNDSTRAND CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 4.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: RADIATION HARDENED
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
OVERALL DIAMETER: 0.313 INCHES MAXIMUM
OVERALL LENGTH: 1.125 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 99167-927A495 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.4 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
10101402
TRANSISTOR
NSN, MFG P/N
5961015016030
NSN
5961-01-501-6030
MFG
HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE-MINNEAPOLIS
Description
CURRENT RATING PER CHARACTERISTIC: 4.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 80.00 MILLIAMPERES MAXIMUM BASE CURRENT, DC
III END ITEM IDENTIFICATION: HELICOPTER, APACHE AH-64
INCLOSURE MATERIAL: METAL
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE AND TERMINAL
OVERALL LENGTH: 1.250 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC
Related Searches:
10101402-101
TRANSISTOR
NSN, MFG P/N
5961015016030
NSN
5961-01-501-6030
MFG
EFW INC.
Description
CURRENT RATING PER CHARACTERISTIC: 4.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 80.00 MILLIAMPERES MAXIMUM BASE CURRENT, DC
III END ITEM IDENTIFICATION: HELICOPTER, APACHE AH-64
INCLOSURE MATERIAL: METAL
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE AND TERMINAL
OVERALL LENGTH: 1.250 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC
