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5961-01-506-0238

20 Products

1203221-0001

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015060238

NSN

5961-01-506-0238

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1203221-0001

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015060238

NSN

5961-01-506-0238

MFG

THALES ATM INC.

1N1183

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015061458

NSN

5961-01-506-1458

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1N1183

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015061458

NSN

5961-01-506-1458

MFG

FREESCALE SEMICONDUCTOR INC.

Description

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 NOMINAL REPETITIVE PEAK REVERSE VOLTAGE

JANTX2N2380

TRANSISTOR

NSN, MFG P/N

5961015061658

NSN

5961-01-506-1658

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JANTX2N2380

TRANSISTOR

NSN, MFG P/N

5961015061658

NSN

5961-01-506-1658

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX2N2380
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 600.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 4

FSX027WF

TRANSISTOR

NSN, MFG P/N

5961015062207

NSN

5961-01-506-2207

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FSX027WF

TRANSISTOR

NSN, MFG P/N

5961015062207

NSN

5961-01-506-2207

MFG

FUJITSU MICROELECTRONICS INC.

EE-SPX403

SEMICONDUCTOR DEVICE,PHOTO

NSN, MFG P/N

5961015062333

NSN

5961-01-506-2333

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EE-SPX403

SEMICONDUCTOR DEVICE,PHOTO

NSN, MFG P/N

5961015062333

NSN

5961-01-506-2333

MFG

OMRON ELECTRONICS LLC DBA O E I

Description

OVERALL HEIGHT: 0.670 INCHES NOMINAL
OVERALL LENGTH: 1.020 INCHES NOMINAL

1N3646

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015062368

NSN

5961-01-506-2368

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1N3646

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015062368

NSN

5961-01-506-2368

MFG

SEMTECH CORPUS CHRISTI.A. DE C.V. REYNOSA FACILITY

Description

CURRENT RATING PER CHARACTERISTIC: 600.000 MILLIAMPERES NOMINAL FORWARD CURRENT, AVERAGE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: RECTIFIER
MOUNTING METHOD: TERMINAL
TERMINAL LENGTH: 25.4 MILLIMETERS MINIMUM AND 33.0 MILLIMETERS MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 2500.0 NOMINAL REPETITIVE PEAK REVERSE VOLTAGE AND 2500.0 NOMINAL WORKING PEAK REVERSE VOLTAGE

JANTX2N2223AUA

TRANSISTOR

NSN, MFG P/N

5961015062423

NSN

5961-01-506-2423

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JANTX2N2223AUA

TRANSISTOR

NSN, MFG P/N

5961015062423

NSN

5961-01-506-2423

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

CURRENT RATING PER CHARACTERISTIC: 800.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX2N2223AUA
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: PRESS FIT
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/255
OVERALL HEIGHT: 0.075 INCHES MAXIMUM
OVERALL LENGTH: 0.225 INCHES MAXIMUM
OVERALL WIDTH: 0.155 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 650.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 4 CASE
TEST DATA DOCUMENT: 8134-MIL-PERF-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 75.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 50.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 6.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN

135 184

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961015063710

NSN

5961-01-506-3710

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135 184

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961015063710

NSN

5961-01-506-3710

MFG

MILLER ELECTRIC MFG CO

179 630

KIT DIODE

NSN, MFG P/N

5961015064558

NSN

5961-01-506-4558

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179 630

KIT DIODE

NSN, MFG P/N

5961015064558

NSN

5961-01-506-4558

MFG

MILLER ELECTRIC MFG CO

1268 349 H91

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961015064687

NSN

5961-01-506-4687

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1268 349 H91

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961015064687

NSN

5961-01-506-4687

MFG

KOMATSU AMERICA INTL CO

1268349H91

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961015064687

NSN

5961-01-506-4687

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1268349H91

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961015064687

NSN

5961-01-506-4687

MFG

KOMATSU AMERICA CORP.

1268 350 H1

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961015064693

NSN

5961-01-506-4693

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1268 350 H1

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961015064693

NSN

5961-01-506-4693

MFG

KOMATSU AMERICA CORP.

2N5665

TRANSISTOR

NSN, MFG P/N

5961015064910

NSN

5961-01-506-4910

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2N5665

TRANSISTOR

NSN, MFG P/N

5961015064910

NSN

5961-01-506-4910

MFG

SOLITRON DEVICES INC.

Description

CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES NOMINAL COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
III END ITEM IDENTIFICATION: USED IN NSN 5895011226087 , TORNADO AIRCRAFT
III PART NAME ASSIGNED BY CONTROLLING AGENCY: NPN TRIPLE DIFFUSED PLANAR POWER TRANSISTOR
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: INTERNAL SURFACES GOLD
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: T0-66
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.610 INCHES MINIMUM AND 0.700 INCHES MAXIMUM
OVERALL LENGTH: 1.960 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 30.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 CASE AND 2 PIN
TRANSFER RATIO: 25.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER AND 75.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE

711825-4

TRANSISTOR

NSN, MFG P/N

5961015065377

NSN

5961-01-506-5377

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711825-4

TRANSISTOR

NSN, MFG P/N

5961015065377

NSN

5961-01-506-5377

MFG

GE AVIATION SYSTEMS LLC DBA GE AVIATION

2112-25860

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961015065446

NSN

5961-01-506-5446

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2112-25860

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961015065446

NSN

5961-01-506-5446

MFG

POLARTHERM OY

27003012S

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015065525

NSN

5961-01-506-5525

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27003012S

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015065525

NSN

5961-01-506-5525

MFG

HEAT WAGONS INC

145760-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015065885

NSN

5961-01-506-5885

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145760-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015065885

NSN

5961-01-506-5885

MFG

LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MISSILES AND FIRE CONTROL - ARCHBALD

Description

CRITICALITY CODE JUSTIFICATION: ZZZY
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: MATERIAL WILL BE IN ACCORDANCE WITH NAVICP ACTIVITY HX QUALITY CONTROL, MANUFACTURING AND TESTING SPECIFICATION

JANTX1N6144A

TRANS VOL SUPP

NSN, MFG P/N

5961015066371

NSN

5961-01-506-6371

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JANTX1N6144A

TRANS VOL SUPP

NSN, MFG P/N

5961015066371

NSN

5961-01-506-6371

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: MILPRE19500/516
MANUFACTURERS CODE: 03950
MANUFACTURERS CODE: 81349
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N6144A
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: MATERIAL WILL BE IN ACCORDANCE WITH NAVICP ACTIVITY HX QUALITY CONTROL, MANUFACTURING AND TESTING SPECIFICATION
SPEC/STD CONTROLLING DATA:
THE MANUFACTURERS DATA:

MILPRE19500/516

TRANS VOL SUPP

NSN, MFG P/N

5961015066371

NSN

5961-01-506-6371

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MILPRE19500/516

TRANS VOL SUPP

NSN, MFG P/N

5961015066371

NSN

5961-01-506-6371

MFG

NAVAL INVENTORY CONTROL POINT MECHANICSBURG

Description

CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: MILPRE19500/516
MANUFACTURERS CODE: 03950
MANUFACTURERS CODE: 81349
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N6144A
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: MATERIAL WILL BE IN ACCORDANCE WITH NAVICP ACTIVITY HX QUALITY CONTROL, MANUFACTURING AND TESTING SPECIFICATION
SPEC/STD CONTROLLING DATA:
THE MANUFACTURERS DATA:

29C5267

TRANSISTOR

NSN, MFG P/N

5961015067106

NSN

5961-01-506-7106

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29C5267

TRANSISTOR

NSN, MFG P/N

5961015067106

NSN

5961-01-506-7106

MFG

NEWARK ELECTRONICS CORPORATION DBA NEWARK DIV NEWARK

Description

III END ITEM IDENTIFICATION: 6130013412073
OVERALL HEIGHT: 0.350 INCHES MAXIMUM
OVERALL LENGTH: 1.187 INCHES MAXIMUM
OVERALL WIDTH: 0.135 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON