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5961-01-513-4150

20 Products

HA7-5141-2

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961015134150

NSN

5961-01-513-4150

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HA7-5141-2

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961015134150

NSN

5961-01-513-4150

MFG

INTERSIL CORPORATION

Description

MAJOR COMPONENTS: MDP1
SPECIAL FEATURES: ITEM NO LONGER MANUFACTURED

11474138

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015135408

NSN

5961-01-513-5408

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11474138

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015135408

NSN

5961-01-513-5408

MFG

U S ARMY AVIATION AND MISSILE COMMAND

Description

III END ITEM IDENTIFICATION: 1430014184396,MISSILE,PATRIOT

SA11470

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015135408

NSN

5961-01-513-5408

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SA11470

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015135408

NSN

5961-01-513-5408

MFG

SEMTECH CORPORATION

Description

III END ITEM IDENTIFICATION: 1430014184396,MISSILE,PATRIOT

SFF450ZDBTX

TRANSISTOR

NSN, MFG P/N

5961015135502

NSN

5961-01-513-5502

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SFF450ZDBTX

TRANSISTOR

NSN, MFG P/N

5961015135502

NSN

5961-01-513-5502

MFG

SOLID STATE DEVICES INC.

Description

CURRENT RATING PER CHARACTERISTIC: 13.00 AMPERES NOMINAL DRAIN CURRENT
FEATURES PROVIDED: QUALITY ASSURANCE LEVEL TX AND HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 3
MOUNTING METHOD: TERMINAL
POWER RATING PER CHARACTERISTIC: 125.0 WATTS NOMINAL AVERAGE OFF-STATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: FAST SWITCHING AND RECOVERY; HIGH TEMP STABILITY
TERMINAL LENGTH: 1.195 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 MINIMUM DRAIN TO SOURCE VOLTAGE

SPD5819SMTX

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015135503

NSN

5961-01-513-5503

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SPD5819SMTX

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015135503

NSN

5961-01-513-5503

MFG

SOLID STATE DEVICES INC.

Description

CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND QUALITY ASSURANCE LEVEL TX
INCLOSURE MATERIAL: GLASS
OVERALL LENGTH: 0.235 INCHES NOMINAL
OVERALL WIDTH: 0.135 INCHES MAXIMUM
SPECIAL FEATURES: OP TEMP M55 TO P125 DEG C; LOW FWD VOLTAGE DROP; LOW PROFILE SURFACE MT; SCHOTTKY
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS

SDA165FTX

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961015135507

NSN

5961-01-513-5507

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SDA165FTX

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961015135507

NSN

5961-01-513-5507

MFG

SOLID STATE DEVICES INC.

Description

ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 PEAK INVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: 12 OPEN BRIDGE 1 PHASE
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.600 INCHES NOMINAL
OVERALL WIDTH: 0.600 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 4 PIN

LDTS30A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015135953

NSN

5961-01-513-5953

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LDTS30A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015135953

NSN

5961-01-513-5953

MFG

MICROSEMI CORP.-SCOTTSDALE DBA MICROSEMI

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: FIRE CONTROL SYSTEM, AIR DEFENSE
III PART NAME ASSIGNED BY CONTROLLING AGENCY: TRANSIENT ABSORPTION ZENER
SPECIAL FEATURES: DESIGNED FOR A STANDARD 24 VOLT POWER SYSTEM THIS SERIES IS USED IN AUTOMOTIVE AND VEHICULAR APPLICATIONS WHERE LOAD-DUMP AND FIELD DECAY TRANSIENTS OCCUR, 3000 WATTS OF PEAK PULSE POWER DISSIPATION AT 50 MS

AT42010

TRANSISTOR

NSN, MFG P/N

5961015136541

NSN

5961-01-513-6541

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AT42010

TRANSISTOR

NSN, MFG P/N

5961015136541

NSN

5961-01-513-6541

MFG

AGILENT TECHNOLOGIES INC. DBA NORTH AMERICAN CONTACT CENTER DIV AGILENT BUSINESS CENTER

Description

CURRENT RATING PER CHARACTERISTIC: 60.00 AMPERES NOMINAL COLLECTOR CURRENT, DC
III PART NAME ASSIGNED BY CONTROLLING AGENCY: PACKAGED BJT
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
POWER RATING PER CHARACTERISTIC: 500.0 WATTS NOMINAL AVERAGE OFF-STATE POWER DISSIPATION
TERMINAL TYPE AND QUANTITY: 1 ELECTRON TUBE BASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 8.0 NOMINAL COLLECTOR-TO-EMITTER VOLTAGE, INSTANTANEOUS

F2R0094

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015137044

NSN

5961-01-513-7044

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F2R0094

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015137044

NSN

5961-01-513-7044

MFG

LINK-BELT CONSTRUCTION EQUIPMENT COMPANY L.P. LLLP

Description

III END ITEM IDENTIFICATION: TRUCK, UTILITY, ELECTRICIAL GROUP

D3R0152

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015137081

NSN

5961-01-513-7081

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D3R0152

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015137081

NSN

5961-01-513-7081

MFG

LINK-BELT CONSTRUCTION EQUIPMENT COMPANY L.P. LLLP

Description

III END ITEM IDENTIFICATION: TRUCK, UTILITY, ELECTRICAL GROUP

D3R0154

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015137092

NSN

5961-01-513-7092

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D3R0154

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015137092

NSN

5961-01-513-7092

MFG

LINK-BELT CONSTRUCTION EQUIPMENT COMPANY L.P. LLLP

Description

III END ITEM IDENTIFICATION: TRUCK, UTILITY, ELECTRICAL GROUP

11744

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961015137735

NSN

5961-01-513-7735

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11744

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961015137735

NSN

5961-01-513-7735

MFG

U.S. PIONEER L.L.C. DBA U.S. PIONEER

Description

ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 4.50 AMPERES FORWARD CURRENT, DC
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 WORKING PEAK REVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
III END ITEM IDENTIFICATION: ILLUMINATOR CONTROL BOX
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.300 INCHES MAXIMUM
OVERALL LENGTH: 0.735 INCHES MINIMUM AND 0.765 INCHES MAXIMUM
OVERALL WIDTH: 0.735 INCHES MINIMUM AND 0.765 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 4 TURRET

SCAJ05F

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961015137735

NSN

5961-01-513-7735

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SCAJ05F

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961015137735

NSN

5961-01-513-7735

MFG

SEMTECH CORPORATION

Description

ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 4.50 AMPERES FORWARD CURRENT, DC
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 WORKING PEAK REVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
III END ITEM IDENTIFICATION: ILLUMINATOR CONTROL BOX
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.300 INCHES MAXIMUM
OVERALL LENGTH: 0.735 INCHES MINIMUM AND 0.765 INCHES MAXIMUM
OVERALL WIDTH: 0.735 INCHES MINIMUM AND 0.765 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 4 TURRET

2N3715

TRANSISTOR

NSN, MFG P/N

5961015137812

NSN

5961-01-513-7812

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2N3715

TRANSISTOR

NSN, MFG P/N

5961015137812

NSN

5961-01-513-7812

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.250 INCHES MINIMUM AND 0.450 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 CASE AND 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 60.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC AND 7.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC

1N1344

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015139297

NSN

5961-01-513-9297

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1N1344

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015139297

NSN

5961-01-513-9297

MFG

WESTINGHOUSE ELECTRIC CORP

Description

OVERALL LENGTH: 1.022 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 NOMINAL REVERSE VOLTAGE, PEAK

123AV53377

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961015140481

NSN

5961-01-514-0481

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123AV53377

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961015140481

NSN

5961-01-514-0481

MFG

NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN AEROSPACE SYSTEMS

Description

III END ITEM IDENTIFICATION: AIRCRAFT, HAWKEYE E-2C; 15 TON VAPOR
III PART NAME ASSIGNED BY CONTROLLING AGENCY: COMPONENT BOARD ASSY, VAPOR CYCLE PANEL
MAJOR COMPONENTS: WIRING BOARD 1, SEMICONDUCTOR DEVICE DIODE 3

591870

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015140799

NSN

5961-01-514-0799

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591870

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015140799

NSN

5961-01-514-0799

MFG

TYCO ELECTRONICS CORPORATION

RE58515

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015142107

NSN

5961-01-514-2107

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RE58515

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015142107

NSN

5961-01-514-2107

MFG

WEST SIDE TRACTOR SALES CO

F1007

TRANSISTOR

NSN, MFG P/N

5961015142180

NSN

5961-01-514-2180

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F1007

TRANSISTOR

NSN, MFG P/N

5961015142180

NSN

5961-01-514-2180

MFG

R F POLYFET DEVICES INC

Description

CURRENT RATING PER CHARACTERISTIC: 4.00 AMPERES MAXIMUM DRAIN CURRENT
FEATURES PROVIDED: LOW NOISE
III PART NAME ASSIGNED BY CONTROLLING AGENCY: SILICON RF POWER, VDMOS TRANSISTOR
INCLOSURE MATERIAL: METAL
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: SLOT
OVERALL HEIGHT: 0.200 INCHES MAXIMUM
OVERALL LENGTH: 0.975 INCHES NOMINAL
OVERALL WIDTH: 0.670 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 100.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: GOLD METALIZED; PACKAGE STYLE - AK; HIGH EFFICIENCY; LINEAR; HIGH GAIN; MAXIMUM JUNCTION TEMPERATURE PLUS 200.0 DEGREES C; STORAGE TEMPERATURE MINUS 65.0 TO PLUS 150.0 DEGREES C; DESIGNED SPECIFICALLY FOR BROADBAND RADIO FREQUENCY (RF) APPLICATIONS
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 70.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 70.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 30.0 MAXIMUM GATE TO SOURCE VOLTAGE

F1070

TRANSISTOR

NSN, MFG P/N

5961015142181

NSN

5961-01-514-2181

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F1070

TRANSISTOR

NSN, MFG P/N

5961015142181

NSN

5961-01-514-2181

MFG

R F POLYFET DEVICES INC

Description

CURRENT RATING PER CHARACTERISTIC: 16.00 AMPERES MAXIMUM DRAIN CURRENT
FEATURES PROVIDED: LOW NOISE
III PART NAME ASSIGNED BY CONTROLLING AGENCY: SILICON RF POWER, VDMOS TRANSISTOR
INCLOSURE MATERIAL: METAL
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: SLOT
OVERALL HEIGHT: 0.200 INCHES MAXIMUM
OVERALL LENGTH: 1.200 INCHES NOMINAL
OVERALL WIDTH: 0.550 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 350.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: GOLD METALIZED; PACKAGE STYLE - AH; HIGH EFFICIENCY; LINEAR; HIGH GAIN; MAXIMUM JUNCTION TEMPERATURE PLUS 200.0 DEGREES C; STORAGE TEMPERATURE MINUS 65.0 TO PLUS 150.0 DEGREES C; DESIGNED SPECIFICALLY FOR BROADBAND RADIO FREQUENCY (RF) APPLICATIONS
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 70.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 70.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 30.0 MAXIMUM GATE TO SOURCE VOLTAGE