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5961-01-542-0021

20 Products

SMBJ9.0CA

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015420021

NSN

5961-01-542-0021

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SMBJ9.0CA

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015420021

NSN

5961-01-542-0021

MFG

FAIRCHILD SEMICONDUCTOR CORPORATION

Description

CURRENT RATING PER CHARACTERISTIC: 100.00 AMPERES MAXIMUM FORWARD CURRENT, NONREPETITIVE, MAXIMUM PEAK TOTAL VALUE
III END ITEM IDENTIFICATION: C-17A AIRCRAFT
III PART NAME ASSIGNED BY CONTROLLING AGENCY: TRANSIENT VOLTAGE SUPPRESSOR
INCLOSURE MATERIAL: PLASTIC
POWER RATING PER CHARACTERISTIC: 600.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON

H316404

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015422885

NSN

5961-01-542-2885

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H316404

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015422885

NSN

5961-01-542-2885

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE
III END ITEM IDENTIFICATION: 1430-01-087-6337, INFORMATION AND COORDINATION CENTRAL
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.075 INCHES MINIMUM AND 0.095 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
OVERALL WIDTH: 0.220 INCHES MINIMUM AND 0.240 INCHES MAXIMUM
SPECIAL FEATURES: MOISTURE SENSITIVE DEVICE; OPERATING JUNCTION TEMP -65 DEG C TO 175 DEG C
TERMINAL LENGTH: 0.030 INCHES MINIMUM AND 0.050 INCHES MAXIMUM
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE

MURS340T3

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015422885

NSN

5961-01-542-2885

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MURS340T3

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015422885

NSN

5961-01-542-2885

MFG

SEMICONDUCTOR COMPONENTS INDUSTRIES LLC DBA SEMI CONDUCTOR COMPONENTS INDUSTRIES DIV CORPORATE HEADQUARTERS

Description

CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE
III END ITEM IDENTIFICATION: 1430-01-087-6337, INFORMATION AND COORDINATION CENTRAL
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.075 INCHES MINIMUM AND 0.095 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
OVERALL WIDTH: 0.220 INCHES MINIMUM AND 0.240 INCHES MAXIMUM
SPECIAL FEATURES: MOISTURE SENSITIVE DEVICE; OPERATING JUNCTION TEMP -65 DEG C TO 175 DEG C
TERMINAL LENGTH: 0.030 INCHES MINIMUM AND 0.050 INCHES MAXIMUM
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE

81590

TRANSISTOR

NSN, MFG P/N

5961015423320

NSN

5961-01-542-3320

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81590

TRANSISTOR

NSN, MFG P/N

5961015423320

NSN

5961-01-542-3320

MFG

SIEMENS WATER TECHNOLOGIES CORP. DBA ELECTRIC CATALYTIC PRODUCTS GROUP DIV ELECTROCATALYTIC PRODUCTS DIV

Description

CURRENT RATING PER CHARACTERISTIC: 75.00 AMPERES MAXIMUM COLLECTOR CURRENT, INSTANTANEOUS
III END ITEM IDENTIFICATION: POWER SUPPLY CONTROL
III PART NAME ASSIGNED BY CONTROLLING AGENCY: DUAL IGBTMOD H-SERIES MODULE
INCLOSURE MATERIAL: PLASTIC
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL LENGTH: 3.700 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 600.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 TAB W/SCREW
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1200.0 MAXIMUM COLLECTOR-TO-EMITTER, SUBSTAINING VOLTAGE, BASE SHORT-CIRCUITEDTO EMITTER

CM75DY-24H

TRANSISTOR

NSN, MFG P/N

5961015423320

NSN

5961-01-542-3320

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CM75DY-24H

TRANSISTOR

NSN, MFG P/N

5961015423320

NSN

5961-01-542-3320

MFG

POWEREX INC

Description

CURRENT RATING PER CHARACTERISTIC: 75.00 AMPERES MAXIMUM COLLECTOR CURRENT, INSTANTANEOUS
III END ITEM IDENTIFICATION: POWER SUPPLY CONTROL
III PART NAME ASSIGNED BY CONTROLLING AGENCY: DUAL IGBTMOD H-SERIES MODULE
INCLOSURE MATERIAL: PLASTIC
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL LENGTH: 3.700 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 600.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 TAB W/SCREW
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1200.0 MAXIMUM COLLECTOR-TO-EMITTER, SUBSTAINING VOLTAGE, BASE SHORT-CIRCUITEDTO EMITTER

IRFP22N50A

TRANSISTOR

NSN, MFG P/N

5961015424138

NSN

5961-01-542-4138

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IRFP22N50A

TRANSISTOR

NSN, MFG P/N

5961015424138

NSN

5961-01-542-4138

MFG

INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.

Description

CURRENT RATING PER CHARACTERISTIC: 14.00 AMPERES NOMINAL DRAIN CURRENT
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 4.7 MILLIMETERS MINIMUM AND 5.3 MILLIMETERS MAXIMUM
OVERALL LENGTH: 33.9 MILLIMETERS MINIMUM AND 35.1 MILLIMETERS MAXIMUM
OVERALL WIDTH: 15.3 MILLIMETERS MINIMUM AND 15.9 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 277.0 WATTS NOMINAL REVERSE POWER DISSIPATION, AVERAGE
TERMINAL LENGTH: 14.2 MILLIMETERS MINIMUM AND 14.8 MILLIMETERS MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 NOMINAL DRAIN TO SOURCE VOLTAGE

TPQ6002

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961015425140

NSN

5961-01-542-5140

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TPQ6002

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961015425140

NSN

5961-01-542-5140

MFG

SPRAGUE ELECTRIC CO WORLD HQS

Description

III END ITEM IDENTIFICATION: RADAR SYSTEM 3D LONG RANGE BAND, LANZA
III PART NAME ASSIGNED BY CONTROLLING AGENCY: INDEPENDENT BJT ARRAY
SPECIAL FEATURES: MOUNTING STYLE THRIUGH HOLE

FRU-8516-073

LED IND REPL KIT

NSN, MFG P/N

5961015425149

NSN

5961-01-542-5149

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FRU-8516-073

LED IND REPL KIT

NSN, MFG P/N

5961015425149

NSN

5961-01-542-5149

MFG

DREW SCIENTIFIC INC. DBA DANAM ELECTRONICS

FRU-8516-088

TRANSISTOR

NSN, MFG P/N

5961015427112

NSN

5961-01-542-7112

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FRU-8516-088

TRANSISTOR

NSN, MFG P/N

5961015427112

NSN

5961-01-542-7112

MFG

DREW SCIENTIFIC INC. DBA DANAM ELECTRONICS

86004598

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961015427954

NSN

5961-01-542-7954

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86004598

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961015427954

NSN

5961-01-542-7954

MFG

JOUAN INC

Description

ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 35.00 AMPERES FORWARD CURRENT, DC
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 SOURCE SUPPLY VOLTAGE
III END ITEM IDENTIFICATION: REFRIGERATED CENTRIFUGE
SPECIAL FEATURES: INAVY: BRIDGE DIODE; MFR CALLS THIS: BRIDGE RECTIFIER

H316414

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961015428865

NSN

5961-01-542-8865

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H316414

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961015428865

NSN

5961-01-542-8865

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES NOMINAL FORWARD CURRENT, AVERAGE
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE
III END ITEM IDENTIFICATION: NSN 1430-01-087-6337; INFORMATION AND COORDINATION CENTRAL,GUIDED MISSILE SYSTEM; W/S: MISSILE, PATRIOT
III PART NAME ASSIGNED BY CONTROLLING AGENCY: SEMICONDUCTOR DEVICE, DIODE - SCHOTTKY POWER RECTIFIER
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.075 INCHES MINIMUM AND 0.095 INCHES MAXIMUM
OVERALL LENGTH: 0.305 INCHES MINIMUM AND 0.320 INCHES MAXIMUM
OVERALL WIDTH: 0.220 INCHES MINIMUM AND 0.240 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: SURFACE MOUNT PLASTIC SMC PACKAGE WITH J-BEND LEADS; OPERATING JUNCTION TEMPERATURE RANGE -65.0 TO 125.0 CELSIUS
TERMINAL LENGTH: 0.030 INCHES MINIMUM AND 0.050 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 FLANGE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0

MBRS320T3

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961015428865

NSN

5961-01-542-8865

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MBRS320T3

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961015428865

NSN

5961-01-542-8865

MFG

SEMICONDUCTOR COMPONENTS INDUSTRIES LLC DBA SEMI CONDUCTOR COMPONENTS INDUSTRIES DIV CORPORATE HEADQUARTERS

Description

CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES NOMINAL FORWARD CURRENT, AVERAGE
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE
III END ITEM IDENTIFICATION: NSN 1430-01-087-6337; INFORMATION AND COORDINATION CENTRAL,GUIDED MISSILE SYSTEM; W/S: MISSILE, PATRIOT
III PART NAME ASSIGNED BY CONTROLLING AGENCY: SEMICONDUCTOR DEVICE, DIODE - SCHOTTKY POWER RECTIFIER
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.075 INCHES MINIMUM AND 0.095 INCHES MAXIMUM
OVERALL LENGTH: 0.305 INCHES MINIMUM AND 0.320 INCHES MAXIMUM
OVERALL WIDTH: 0.220 INCHES MINIMUM AND 0.240 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: SURFACE MOUNT PLASTIC SMC PACKAGE WITH J-BEND LEADS; OPERATING JUNCTION TEMPERATURE RANGE -65.0 TO 125.0 CELSIUS
TERMINAL LENGTH: 0.030 INCHES MINIMUM AND 0.050 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 FLANGE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0

FSB0002518

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961015429019

NSN

5961-01-542-9019

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FSB0002518

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961015429019

NSN

5961-01-542-9019

MFG

PROGENY SYSTEMS CORPORATION

Description

CRITICALITY CODE JUSTIFICATION: AGAV
III END ITEM IDENTIFICATION: AN/BQQ-10(V) UNIT 4039 TI04, AI & R;AN/BQQ-10(V)6 UNIT 4039 SSGN TI01, AI & R
III PART NAME ASSIGNED BY CONTROLLING AGENCY: (INAVY)SENSOR INTERFACE

FSB0002519

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961015429020

NSN

5961-01-542-9020

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FSB0002519

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961015429020

NSN

5961-01-542-9020

MFG

PROGENY SYSTEMS CORPORATION

Description

CRITICALITY CODE JUSTIFICATION: AGAV
III END ITEM IDENTIFICATION: AN/BQQ-10(V) UNIT 4039 TI04, AI & R;AN/BQQ-10(V)6 UNIT 4039 SSGN TI04, AI & R
III PART NAME ASSIGNED BY CONTROLLING AGENCY: (INAVY)SENSOR INTERFACE

185960

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015429070

NSN

5961-01-542-9070

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185960

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015429070

NSN

5961-01-542-9070

MFG

U S DEPT OF TRANSPORTATION FEDERAL AVIATION ADMINISTRATION

Description

III END ITEM IDENTIFICATION: AIR ROUTE SURVEILLANCE RADAR, ANFPS20

5D0013-2B

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015429848

NSN

5961-01-542-9848

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5D0013-2B

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015429848

NSN

5961-01-542-9848

MFG

BOEING COMPANY THE DBA BOEING DIV DEFENSE SPACE & SECURITY - GLOBAL MOBILITY SYSTEMS

R-720

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015429848

NSN

5961-01-542-9848

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R-720

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015429848

NSN

5961-01-542-9848

MFG

RUSSTECH ENGINEERING CO INC

RB5D0013-2B

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015429848

NSN

5961-01-542-9848

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RB5D0013-2B

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015429848

NSN

5961-01-542-9848

MFG

R & B ELECTRONICS INC.

VBO125-12N07

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961015430549

NSN

5961-01-543-0549

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VBO125-12N07

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961015430549

NSN

5961-01-543-0549

MFG

IXYS CORPORATION

Description

ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 124.00 AMPERES FORWARD CURRENT, AVERAGE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1200.0 REPETITIVE PEAK REVERSE VOLTAGE
MOUNTING METHOD: THREADED HOLE
TERMINAL TYPE AND QUANTITY: 4 TAB W/SCREW

ES4607-5614

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015430970

NSN

5961-01-543-0970

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ES4607-5614

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015430970

NSN

5961-01-543-0970

MFG

EMERSON ELECTRIC CO . DIV WHITE-RODGERS