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5962-01-345-3011
20 Products
588R477H01
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013453011
NSN
5962-01-345-3011
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN SYSTEMS CORPORATION ELECTRONIC SYSTEMS
Description
(NON-CORE DATA) BIT QUANTITY: 65536
(NON-CORE DATA) WORD QUANTITY: 8192
BODY HEIGHT: 0.090 INCHES MINIMUM AND 0.130 INCHES MAXIMUM
BODY LENGTH: 0.740 INCHES MAXIMUM
BODY WIDTH: 0.380 INCHES MINIMUM AND 0.420 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: F-12 MIL-M-38510
CURRENT RATING PER CHARACTERISTIC: 45.00 MILLIAMPERES MAXIMUM SUPPLY
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND ERASABLE
III OVERALL HEIGHT: 0.090 INCHES MINIMUM AND 0.130 INCHES MAXIMUM
III OVERALL LENGTH: 0.740 INCHES MAXIMUM
III OVERALL WIDTH: 1.160 INCHES MAXIMUM
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 24 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: EEPROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
T
Related Searches:
5962-8751413ZA
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013453011
NSN
5962-01-345-3011
MFG
DLA LAND AND MARITIME OPNS SUPPORT GROUP DOCUMENT CONTROL UNIT
Description
(NON-CORE DATA) BIT QUANTITY: 65536
(NON-CORE DATA) WORD QUANTITY: 8192
BODY HEIGHT: 0.090 INCHES MINIMUM AND 0.130 INCHES MAXIMUM
BODY LENGTH: 0.740 INCHES MAXIMUM
BODY WIDTH: 0.380 INCHES MINIMUM AND 0.420 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: F-12 MIL-M-38510
CURRENT RATING PER CHARACTERISTIC: 45.00 MILLIAMPERES MAXIMUM SUPPLY
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND ERASABLE
III OVERALL HEIGHT: 0.090 INCHES MINIMUM AND 0.130 INCHES MAXIMUM
III OVERALL LENGTH: 0.740 INCHES MAXIMUM
III OVERALL WIDTH: 1.160 INCHES MAXIMUM
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 24 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: EEPROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
T
Related Searches:
5962-8751415ZA
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013453011
NSN
5962-01-345-3011
MFG
DLA LAND AND MARITIME OPNS SUPPORT GROUP DOCUMENT CONTROL UNIT
Description
(NON-CORE DATA) BIT QUANTITY: 65536
(NON-CORE DATA) WORD QUANTITY: 8192
BODY HEIGHT: 0.090 INCHES MINIMUM AND 0.130 INCHES MAXIMUM
BODY LENGTH: 0.740 INCHES MAXIMUM
BODY WIDTH: 0.380 INCHES MINIMUM AND 0.420 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: F-12 MIL-M-38510
CURRENT RATING PER CHARACTERISTIC: 45.00 MILLIAMPERES MAXIMUM SUPPLY
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND ERASABLE
III OVERALL HEIGHT: 0.090 INCHES MINIMUM AND 0.130 INCHES MAXIMUM
III OVERALL LENGTH: 0.740 INCHES MAXIMUM
III OVERALL WIDTH: 1.160 INCHES MAXIMUM
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 24 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: EEPROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
T
Related Searches:
AT28C64-35FM/883
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013453011
NSN
5962-01-345-3011
MFG
ATMEL CORPORATION
Description
(NON-CORE DATA) BIT QUANTITY: 65536
(NON-CORE DATA) WORD QUANTITY: 8192
BODY HEIGHT: 0.090 INCHES MINIMUM AND 0.130 INCHES MAXIMUM
BODY LENGTH: 0.740 INCHES MAXIMUM
BODY WIDTH: 0.380 INCHES MINIMUM AND 0.420 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: F-12 MIL-M-38510
CURRENT RATING PER CHARACTERISTIC: 45.00 MILLIAMPERES MAXIMUM SUPPLY
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND ERASABLE
III OVERALL HEIGHT: 0.090 INCHES MINIMUM AND 0.130 INCHES MAXIMUM
III OVERALL LENGTH: 0.740 INCHES MAXIMUM
III OVERALL WIDTH: 1.160 INCHES MAXIMUM
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 24 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: EEPROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
T
Related Searches:
ROM/PROM
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013453011
NSN
5962-01-345-3011
MFG
DLA LAND AND MARITIME
Description
(NON-CORE DATA) BIT QUANTITY: 65536
(NON-CORE DATA) WORD QUANTITY: 8192
BODY HEIGHT: 0.090 INCHES MINIMUM AND 0.130 INCHES MAXIMUM
BODY LENGTH: 0.740 INCHES MAXIMUM
BODY WIDTH: 0.380 INCHES MINIMUM AND 0.420 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: F-12 MIL-M-38510
CURRENT RATING PER CHARACTERISTIC: 45.00 MILLIAMPERES MAXIMUM SUPPLY
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND ERASABLE
III OVERALL HEIGHT: 0.090 INCHES MINIMUM AND 0.130 INCHES MAXIMUM
III OVERALL LENGTH: 0.740 INCHES MAXIMUM
III OVERALL WIDTH: 1.160 INCHES MAXIMUM
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 24 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: EEPROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
T
Related Searches:
8516249-101
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013454270
NSN
5962-01-345-4270
MFG
HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE - ALBUQUERQUE
Description
FEATURES PROVIDED: PROGRAMMABLE AND BIPOLAR AND ELECTROSTATIC SENSITIVE
III END ITEM IDENTIFICATION: 1260-01-165-3959 CONTROL-DISPLAY SYS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
MEMORY DEVICE TYPE: PROGRAMMABLE
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
Related Searches:
8516713-401
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013454270
NSN
5962-01-345-4270
MFG
HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE - ALBUQUERQUE
Description
FEATURES PROVIDED: PROGRAMMABLE AND BIPOLAR AND ELECTROSTATIC SENSITIVE
III END ITEM IDENTIFICATION: 1260-01-165-3959 CONTROL-DISPLAY SYS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
MEMORY DEVICE TYPE: PROGRAMMABLE
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
Related Searches:
ROM/PROM FAMILY 159
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013454270
NSN
5962-01-345-4270
ROM/PROM FAMILY 159
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013454270
NSN
5962-01-345-4270
MFG
DLA LAND AND MARITIME
Description
FEATURES PROVIDED: PROGRAMMABLE AND BIPOLAR AND ELECTROSTATIC SENSITIVE
III END ITEM IDENTIFICATION: 1260-01-165-3959 CONTROL-DISPLAY SYS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
MEMORY DEVICE TYPE: PROGRAMMABLE
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
Related Searches:
8511930-401
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013454271
NSN
5962-01-345-4271
MFG
HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE - ALBUQUERQUE
Description
FEATURES PROVIDED: PROGRAMMABLE AND BIPOLAR AND ELECTROSTATIC SENSITIVE
III END ITEM IDENTIFICATION: 1260-01-165-3959 CONTROL-DISPLAY SYS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
MEMORY DEVICE TYPE: PROGRAMMABLE
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
Related Searches:
8517231-100
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013454271
NSN
5962-01-345-4271
MFG
HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE - ALBUQUERQUE
Description
FEATURES PROVIDED: PROGRAMMABLE AND BIPOLAR AND ELECTROSTATIC SENSITIVE
III END ITEM IDENTIFICATION: 1260-01-165-3959 CONTROL-DISPLAY SYS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
MEMORY DEVICE TYPE: PROGRAMMABLE
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
Related Searches:
ROM/PROM FAMILY 122
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013454271
NSN
5962-01-345-4271
ROM/PROM FAMILY 122
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013454271
NSN
5962-01-345-4271
MFG
DLA LAND AND MARITIME
Description
FEATURES PROVIDED: PROGRAMMABLE AND BIPOLAR AND ELECTROSTATIC SENSITIVE
III END ITEM IDENTIFICATION: 1260-01-165-3959 CONTROL-DISPLAY SYS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
MEMORY DEVICE TYPE: PROGRAMMABLE
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
Related Searches:
888-033-000-HCI
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013454272
NSN
5962-01-345-4272
MFG
PARKER-HANNIFIN CORPORATION DBA CUSTOMER SUPPORT MILITARY DIVISION DIV CUSTOMER SUPPORT OPERATIONS
Description
(NON-CORE DATA) BIT QUANTITY: 262144
(NON-CORE DATA) WORD QUANTITY: 32768
CRITICALITY CODE JUSTIFICATION: FEAT
FEATURES PROVIDED: PROGRAMMED AND ELECTROSTATIC SENSITIVE
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
Related Searches:
888-033-002-HCI
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013454272
NSN
5962-01-345-4272
MFG
PARKER-HANNIFIN CORPORATION DBA CUSTOMER SUPPORT MILITARY DIVISION DIV CUSTOMER SUPPORT OPERATIONS
Description
(NON-CORE DATA) BIT QUANTITY: 262144
(NON-CORE DATA) WORD QUANTITY: 32768
CRITICALITY CODE JUSTIFICATION: FEAT
FEATURES PROVIDED: PROGRAMMED AND ELECTROSTATIC SENSITIVE
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
Related Searches:
NH888-033-002-HCI
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013454272
NSN
5962-01-345-4272
NH888-033-002-HCI
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013454272
NSN
5962-01-345-4272
MFG
DLA LAND AND MARITIME
Description
(NON-CORE DATA) BIT QUANTITY: 262144
(NON-CORE DATA) WORD QUANTITY: 32768
CRITICALITY CODE JUSTIFICATION: FEAT
FEATURES PROVIDED: PROGRAMMED AND ELECTROSTATIC SENSITIVE
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
Related Searches:
ROM/PROM
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013454272
NSN
5962-01-345-4272
MFG
DLA LAND AND MARITIME
Description
(NON-CORE DATA) BIT QUANTITY: 262144
(NON-CORE DATA) WORD QUANTITY: 32768
CRITICALITY CODE JUSTIFICATION: FEAT
FEATURES PROVIDED: PROGRAMMED AND ELECTROSTATIC SENSITIVE
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
Related Searches:
100886-001
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962013455101
NSN
5962-01-345-5101
MFG
EFRATOM TIME & FREQUENCY PRODUCTS INC
Description
(NON-CORE DATA) BIT QUANTITY: 16
CURRENT RATING PER CHARACTERISTIC: 150.00 MILLIAMPERES MAXIMUM SUPPLY
DESIGN FUNCTION AND QUANTITY: 1 MICROPROCESSOR
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE AND MONOLITHIC AND W/RESET AND W/CLOCK
INCLOSURE CONFIGURATION: PIN GRID ARRAY
INCLOSURE MATERIAL: CERAMIC
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
OPERATING TEMP RANGE: -40.0 TO 85.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 68 PIN
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.0 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
TA80C188
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962013455101
NSN
5962-01-345-5101
MFG
INTEL CORP SALES OFFICE
Description
(NON-CORE DATA) BIT QUANTITY: 16
CURRENT RATING PER CHARACTERISTIC: 150.00 MILLIAMPERES MAXIMUM SUPPLY
DESIGN FUNCTION AND QUANTITY: 1 MICROPROCESSOR
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE AND MONOLITHIC AND W/RESET AND W/CLOCK
INCLOSURE CONFIGURATION: PIN GRID ARRAY
INCLOSURE MATERIAL: CERAMIC
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
OPERATING TEMP RANGE: -40.0 TO 85.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 68 PIN
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.0 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
2496612-12
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013455102
NSN
5962-01-345-5102
MFG
RAYTHEON COMPANY
Description
(NON-CORE DATA) BIT QUANTITY: 2048
(NON-CORE DATA) WORD QUANTITY: 512
BODY HEIGHT: 0.175 INCHES MAXIMUM
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.302 INCHES MAXIMUM
FEATURES PROVIDED: 3-STATE OUTPUT AND PROGRAMMED
III END ITEM IDENTIFICATION: RADAR SET AN/APQ-172(V)
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 614.4 MILLIWATTS
MEMORY DEVICE TYPE: PROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 40.00 NANOSECONDS MAXIMUM DELAY
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
537864-1
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013455102
NSN
5962-01-345-5102
MFG
RAYTHEON COMPANY
Description
(NON-CORE DATA) BIT QUANTITY: 2048
(NON-CORE DATA) WORD QUANTITY: 512
BODY HEIGHT: 0.175 INCHES MAXIMUM
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.302 INCHES MAXIMUM
FEATURES PROVIDED: 3-STATE OUTPUT AND PROGRAMMED
III END ITEM IDENTIFICATION: RADAR SET AN/APQ-172(V)
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 614.4 MILLIWATTS
MEMORY DEVICE TYPE: PROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 40.00 NANOSECONDS MAXIMUM DELAY
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
ROM/PROM FAMILY 008
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013455102
NSN
5962-01-345-5102
ROM/PROM FAMILY 008
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013455102
NSN
5962-01-345-5102
MFG
DLA LAND AND MARITIME
Description
(NON-CORE DATA) BIT QUANTITY: 2048
(NON-CORE DATA) WORD QUANTITY: 512
BODY HEIGHT: 0.175 INCHES MAXIMUM
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.302 INCHES MAXIMUM
FEATURES PROVIDED: 3-STATE OUTPUT AND PROGRAMMED
III END ITEM IDENTIFICATION: RADAR SET AN/APQ-172(V)
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 614.4 MILLIWATTS
MEMORY DEVICE TYPE: PROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 40.00 NANOSECONDS MAXIMUM DELAY
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
