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5961-01-173-8209
20 Products
7210110-001
TRANSISTOR
NSN, MFG P/N
5961011738209
NSN
5961-01-173-8209
MFG
COHU INC. DBA COHU ELECTRONICS DIVISION
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 0.50 AMPERES MAXIMUM BASE CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-220
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.190 INCHES MAXIMUM
OVERALL LENGTH: 0.615 INCHES MAXIMUM
OVERALL WIDTH: 0.420 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 2.1 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 PIN
TRANSFER RATIO: 175.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 300.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 400.0 MAXIMUM COLLECTOR TO EMITTER REVERSE VOLTAGE, WITH BASE SHORT-CIRCUITE
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808GDI0DE
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011732720
NSN
5961-01-173-2720
MFG
LUCENT TECHNOLOGIES INC DBA FEDERAL MARKETING GROUP
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
813CDI0DE
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011732721
NSN
5961-01-173-2721
MFG
LUCENT TECHNOLOGIES INC DBA FEDERAL MARKETING GROUP
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
015569
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011732722
NSN
5961-01-173-2722
MFG
BELL AND HOWELL PHILLIPSBURG CO CORPORATE OFFICES
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
1975328
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011732723
NSN
5961-01-173-2723
MFG
REMY INC.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
8133268
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011732723
NSN
5961-01-173-2723
MFG
AM GENERAL LLC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
490597-2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011732724
NSN
5961-01-173-2724
MFG
HOBART BROS CO
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
2N5493
TRANSISTOR
NSN, MFG P/N
5961011733021
NSN
5961-01-173-3021
MFG
INTERSIL CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 7.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 3.00 AMPERES MAXIMUM BASE CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
INCLOSURE MATERIAL: PLASTIC AND METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-220AA
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.612 INCHES MAXIMUM
OVERALL LENGTH: 0.730 INCHES MAXIMUM
OVERALL WIDTH: 0.420 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 50.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 80131-RELEASE6145A PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 3 PIN
TRANSFER RATIO: 100.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLT
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JAN2N5493
TRANSISTOR
NSN, MFG P/N
5961011733021
NSN
5961-01-173-3021
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 7.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 3.00 AMPERES MAXIMUM BASE CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
INCLOSURE MATERIAL: PLASTIC AND METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-220AA
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.612 INCHES MAXIMUM
OVERALL LENGTH: 0.730 INCHES MAXIMUM
OVERALL WIDTH: 0.420 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 50.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 80131-RELEASE6145A PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 3 PIN
TRANSFER RATIO: 100.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLT
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RELEASE6145A
TRANSISTOR
NSN, MFG P/N
5961011733021
NSN
5961-01-173-3021
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 7.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 3.00 AMPERES MAXIMUM BASE CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
INCLOSURE MATERIAL: PLASTIC AND METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-220AA
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.612 INCHES MAXIMUM
OVERALL LENGTH: 0.730 INCHES MAXIMUM
OVERALL WIDTH: 0.420 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 50.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 80131-RELEASE6145A PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 3 PIN
TRANSFER RATIO: 100.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLT
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46-2002-2501
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011733022
NSN
5961-01-173-3022
46-2002-2501
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011733022
NSN
5961-01-173-3022
MFG
RADAMEC BROADCAST SYSTEMS LTD
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 5.00 MICROAMPERES NOMINAL REVERSE CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N6055A
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: COMPUTER DISPLAY SET, AN/UYQ-21(V); AIRCRAFT, (AC-130H, MC-103H, EC-
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: D0-13
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/507
OVERALL DIAMETER: 0.235 INCHES MAXIMUM
OVERALL LENGTH: 0.357 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.5 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL; JUNCTION PATTERN ARRANGEMENT: PN
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/507 GOVERNMENT SPEC
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B94328
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011733022
NSN
5961-01-173-3022
MFG
MBDA UK LTD
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 5.00 MICROAMPERES NOMINAL REVERSE CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N6055A
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: COMPUTER DISPLAY SET, AN/UYQ-21(V); AIRCRAFT, (AC-130H, MC-103H, EC-
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: D0-13
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/507
OVERALL DIAMETER: 0.235 INCHES MAXIMUM
OVERALL LENGTH: 0.357 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.5 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL; JUNCTION PATTERN ARRANGEMENT: PN
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/507 GOVERNMENT SPEC
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JANTX1N6055A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011733022
NSN
5961-01-173-3022
JANTX1N6055A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011733022
NSN
5961-01-173-3022
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 5.00 MICROAMPERES NOMINAL REVERSE CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N6055A
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: COMPUTER DISPLAY SET, AN/UYQ-21(V); AIRCRAFT, (AC-130H, MC-103H, EC-
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: D0-13
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/507
OVERALL DIAMETER: 0.235 INCHES MAXIMUM
OVERALL LENGTH: 0.357 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.5 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL; JUNCTION PATTERN ARRANGEMENT: PN
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/507 GOVERNMENT SPEC
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103A483P1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011733023
NSN
5961-01-173-3023
MFG
VARO LLC
Description
CURRENT RATING PER CHARACTERISTIC: 600.00 AMPERES MAXIMUM FORWARD CURRENT, TOTAL RMS AND 380.00 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 1.656 INCHES MAXIMUM
OVERALL LENGTH: 0.565 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 CLAMP
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 800.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011733023
NSN
5961-01-173-3023
MFG
GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT
Description
CURRENT RATING PER CHARACTERISTIC: 600.00 AMPERES MAXIMUM FORWARD CURRENT, TOTAL RMS AND 380.00 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 1.656 INCHES MAXIMUM
OVERALL LENGTH: 0.565 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 CLAMP
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 800.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011733023
NSN
5961-01-173-3023
R6220840CJ000
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011733023
NSN
5961-01-173-3023
MFG
WESTINGHOUSE ELECTRIC CORP SEMICONDUCTOR DIV
Description
CURRENT RATING PER CHARACTERISTIC: 600.00 AMPERES MAXIMUM FORWARD CURRENT, TOTAL RMS AND 380.00 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 1.656 INCHES MAXIMUM
OVERALL LENGTH: 0.565 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 CLAMP
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 800.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
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16610013-001
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961011735556
NSN
5961-01-173-5556
16610013-001
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961011735556
NSN
5961-01-173-5556
MFG
SYPRIS ELECTRONICS LLC
Description
MAJOR COMPONENTS: PRINTED WIRING BOARD 1; SEMICONDUCTOR DIVICE,PHOTO 2; CONNECTOR 1; CIRCUIT CARD 1; PHOTO TRANSISTOR MOUNT 1
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351-0513-030
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011737362
NSN
5961-01-173-7362
351-0513-030
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011737362
NSN
5961-01-173-7362
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
CAPACITANCE RATING IN PICOFARADS: 10.0 MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE
COMPONENT NAME AND QUANTITY: 4 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 1.50 AMPERES MAXIMUM COLLECTOR CURRENT, DC ALL SEMICONDUCTOR DEVICE DIODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.200 INCHES MAXIMUM
OVERALL LENGTH: 0.785 INCHES MAXIMUM
OVERALL WIDTH: 0.015 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.75 WATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL SEMICONDUCTOR DEVICE DIODE
RESPONSE TIME: 35.0 NANOSECONDS MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
SPECIAL FEATURES: ALL SEMICONDUCTOR DEVICE DIODE JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.100 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 14 PIN
TRANSFER RATIO: 60.0 MAXIMUM STATIC FORWARD CURRENT
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SHQ635H
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011737362
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5961-01-173-7362
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SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011737362
NSN
5961-01-173-7362
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CAPACITANCE RATING IN PICOFARADS: 10.0 MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE
COMPONENT NAME AND QUANTITY: 4 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 1.50 AMPERES MAXIMUM COLLECTOR CURRENT, DC ALL SEMICONDUCTOR DEVICE DIODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.200 INCHES MAXIMUM
OVERALL LENGTH: 0.785 INCHES MAXIMUM
OVERALL WIDTH: 0.015 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.75 WATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL SEMICONDUCTOR DEVICE DIODE
RESPONSE TIME: 35.0 NANOSECONDS MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
SPECIAL FEATURES: ALL SEMICONDUCTOR DEVICE DIODE JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.100 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 14 PIN
TRANSFER RATIO: 60.0 MAXIMUM STATIC FORWARD CURRENT
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G390252S1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011737632
NSN
5961-01-173-7632
MFG
ITT CORPORATION DBA ITT GILFILLAN
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.112 INCHES
OVERALL HEIGHT: 0.650 INCHES MAXIMUM
OVERALL LENGTH: 3.000 INCHES MAXIMUM
OVERALL WIDTH: 1.000 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 THREADED HOLE
THREAD SERIES DESIGNATOR: UNC
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1200.0 MAXIMUM REVERSE VOLTAGE, PEAK
