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5962-01-519-4999
20 Products
UC3610N
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962015194999
NSN
5962-01-519-4999
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES NOMINAL OUTPUT
III SUPPLEMENTARY FEATURES: FUNCTIONAL DESCRIPTION DESIGNED FOR HIGH-CURRENT, LOW DUTY-CYCLE APPLICATIONS TYPICAL OF FLYBACK VOLTAGE CLAMPING FOR INDUCTIVE LOADS
INCLOSURE MATERIAL: PLASTIC
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
PART NAME ASSIGNED BY CONTROLLING AGENCY: DUAL SCHOTTKEY DIODE BRIDGE
SPECIAL FEATURES: COPPER-LEADED PLASTIC PACKAGE
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL TYPE AND QUANTITY: 8 PIN
TIME RATING PER CHACTERISTIC: 15.00 NANOSECONDS NOMINAL REVERSE RECOVERY
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 50.0 VOLTS MAXIMUM INVERSE
Related Searches:
9-333-103624
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962015195207
NSN
5962-01-519-5207
MFG
GROVE U.S. L.L.C
Description
MICROCIRCUIT,DIGITAL
Related Searches:
A1020B-PL68C
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962015195328
NSN
5962-01-519-5328
MFG
ACTEL CORPORATION
Description
INCLOSURE MATERIAL: PLASTIC
MEMORY DEVICE TYPE: PROGRAMMABLE
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
PART NAME ASSIGNED BY CONTROLLING AGENCY: FIELD PROGRAMMABLE GATE ARRAY
TERMINAL TYPE AND QUANTITY: 20 PIN
TIME RATING PER CHACTERISTIC: 500.00 NANOSECONDS NOMINAL INPUT
Related Searches:
SN54AC244FK
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962015195334
NSN
5962-01-519-5334
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
DESIGN FUNCTION AND QUANTITY: 4 BUFFER AND 4 DRIVER
III SUPPLEMENTARY FEATURES: FUNCTIONAL DESCRIPTION DESIGNED TO IMPROVE THE PERFORMANCE AND DENSITY OF 3-STATE MEMORY ADDRESS DRIVERS, CLOCK DRIVERS AND BUS-ORIENTED RECEIVERS AND TRANSMITTERS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
PART NAME ASSIGNED BY CONTROLLING AGENCY: OCTAL BUFFERS DRIVERS WITH 3-STATE OUTPUTS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL TYPE AND QUANTITY: 20 PIN
TIME RATING PER CHACTERISTIC: 8.00 NANOSECONDS MAXIMUM INPUT
Related Searches:
SNJ54AC244FK
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962015195334
NSN
5962-01-519-5334
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
DESIGN FUNCTION AND QUANTITY: 4 BUFFER AND 4 DRIVER
III SUPPLEMENTARY FEATURES: FUNCTIONAL DESCRIPTION DESIGNED TO IMPROVE THE PERFORMANCE AND DENSITY OF 3-STATE MEMORY ADDRESS DRIVERS, CLOCK DRIVERS AND BUS-ORIENTED RECEIVERS AND TRANSMITTERS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
PART NAME ASSIGNED BY CONTROLLING AGENCY: OCTAL BUFFERS DRIVERS WITH 3-STATE OUTPUTS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL TYPE AND QUANTITY: 20 PIN
TIME RATING PER CHACTERISTIC: 8.00 NANOSECONDS MAXIMUM INPUT
Related Searches:
SG1843Y/883B
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962015195373
NSN
5962-01-519-5373
MFG
MICROSEMI CORP.-INTEGRATED PRODUCTS
Description
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
PART NAME ASSIGNED BY CONTROLLING AGENCY: CURRENT MODE PWM CONTROLLER
SPECIAL FEATURES: MINUS 55 TO PLUS 125 DEGREES CELESUS OPERTATING AMBIENT TEMPERATURE;4.90 TO 5.10 VOLTS OUTPUT VOLTAGE
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL TYPE AND QUANTITY: 8 PIN
Related Searches:
356A1409
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962015195479
NSN
5962-01-519-5479
MFG
BAE SYSTEMS CONTROLS INC.
Description
BODY HEIGHT: 0.172 INCHES NOMINAL
BODY LENGTH: 0.653 INCHES NOMINAL
BODY WIDTH: 0.653 INCHES NOMINAL
CASE OUTLINE SOURCE AND DESIGNATOR: MS-018-AC JOINT ELECTRON DEVICE ENGINEERING COUNCIL
CRITICALITY CODE JUSTIFICATION: CBBL
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE AND HIGH SPEED AND LOW POWER AND INTERNALLY COMPENSATED AND EXPANDABLE AND ASYNCHRONOUS AND SELECTED ITEM
III END ITEM IDENTIFICATION: C-17A
INCLOSURE CONFIGURATION: LEADED CHIP CARRIER
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 9 INPUT AND 13 INPUT
MEMORY CAPACITY: 2048WORDSX9BITS
MEMORY DEVICE TYPE: FIRST-IN FIRST-OUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
PART NAME ASSIGNED BY CONTROLLING AGENCY: MICROCIRCUIT, PLASTIC ENCAPSULATED (SURFACE MOUNT) - PROCUREMENT AND SELECTION REQUIREMENTS (FOR SERIAL FIFO)
SPECIAL FEATURES: CMOS PARALLEL/SERIAL FIFO USING 5O MHZ SERIAL INPUT/OUTPUT FREQUENCY
SPECIAL TEST FEATURES: IDT42103L35J IS 100 PERCENT UPSCREENED PER PARA 3.1.1 OF DWG 89954/35
Related Searches:
356A1409P14
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962015195479
NSN
5962-01-519-5479
MFG
BAE SYSTEMS CONTROLS INC.
Description
BODY HEIGHT: 0.172 INCHES NOMINAL
BODY LENGTH: 0.653 INCHES NOMINAL
BODY WIDTH: 0.653 INCHES NOMINAL
CASE OUTLINE SOURCE AND DESIGNATOR: MS-018-AC JOINT ELECTRON DEVICE ENGINEERING COUNCIL
CRITICALITY CODE JUSTIFICATION: CBBL
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE AND HIGH SPEED AND LOW POWER AND INTERNALLY COMPENSATED AND EXPANDABLE AND ASYNCHRONOUS AND SELECTED ITEM
III END ITEM IDENTIFICATION: C-17A
INCLOSURE CONFIGURATION: LEADED CHIP CARRIER
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 9 INPUT AND 13 INPUT
MEMORY CAPACITY: 2048WORDSX9BITS
MEMORY DEVICE TYPE: FIRST-IN FIRST-OUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
PART NAME ASSIGNED BY CONTROLLING AGENCY: MICROCIRCUIT, PLASTIC ENCAPSULATED (SURFACE MOUNT) - PROCUREMENT AND SELECTION REQUIREMENTS (FOR SERIAL FIFO)
SPECIAL FEATURES: CMOS PARALLEL/SERIAL FIFO USING 5O MHZ SERIAL INPUT/OUTPUT FREQUENCY
SPECIAL TEST FEATURES: IDT42103L35J IS 100 PERCENT UPSCREENED PER PARA 3.1.1 OF DWG 89954/35
Related Searches:
89954-356A1409P14
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962015195479
NSN
5962-01-519-5479
89954-356A1409P14
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962015195479
NSN
5962-01-519-5479
MFG
BAE SYSTEMS CONTROLS INC.
Description
BODY HEIGHT: 0.172 INCHES NOMINAL
BODY LENGTH: 0.653 INCHES NOMINAL
BODY WIDTH: 0.653 INCHES NOMINAL
CASE OUTLINE SOURCE AND DESIGNATOR: MS-018-AC JOINT ELECTRON DEVICE ENGINEERING COUNCIL
CRITICALITY CODE JUSTIFICATION: CBBL
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE AND HIGH SPEED AND LOW POWER AND INTERNALLY COMPENSATED AND EXPANDABLE AND ASYNCHRONOUS AND SELECTED ITEM
III END ITEM IDENTIFICATION: C-17A
INCLOSURE CONFIGURATION: LEADED CHIP CARRIER
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 9 INPUT AND 13 INPUT
MEMORY CAPACITY: 2048WORDSX9BITS
MEMORY DEVICE TYPE: FIRST-IN FIRST-OUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
PART NAME ASSIGNED BY CONTROLLING AGENCY: MICROCIRCUIT, PLASTIC ENCAPSULATED (SURFACE MOUNT) - PROCUREMENT AND SELECTION REQUIREMENTS (FOR SERIAL FIFO)
SPECIAL FEATURES: CMOS PARALLEL/SERIAL FIFO USING 5O MHZ SERIAL INPUT/OUTPUT FREQUENCY
SPECIAL TEST FEATURES: IDT42103L35J IS 100 PERCENT UPSCREENED PER PARA 3.1.1 OF DWG 89954/35
Related Searches:
IDT72103L35J
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962015195479
NSN
5962-01-519-5479
MFG
INTEGRATED DEVICE TECHNOLOGY INC
Description
BODY HEIGHT: 0.172 INCHES NOMINAL
BODY LENGTH: 0.653 INCHES NOMINAL
BODY WIDTH: 0.653 INCHES NOMINAL
CASE OUTLINE SOURCE AND DESIGNATOR: MS-018-AC JOINT ELECTRON DEVICE ENGINEERING COUNCIL
CRITICALITY CODE JUSTIFICATION: CBBL
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE AND HIGH SPEED AND LOW POWER AND INTERNALLY COMPENSATED AND EXPANDABLE AND ASYNCHRONOUS AND SELECTED ITEM
III END ITEM IDENTIFICATION: C-17A
INCLOSURE CONFIGURATION: LEADED CHIP CARRIER
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 9 INPUT AND 13 INPUT
MEMORY CAPACITY: 2048WORDSX9BITS
MEMORY DEVICE TYPE: FIRST-IN FIRST-OUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
PART NAME ASSIGNED BY CONTROLLING AGENCY: MICROCIRCUIT, PLASTIC ENCAPSULATED (SURFACE MOUNT) - PROCUREMENT AND SELECTION REQUIREMENTS (FOR SERIAL FIFO)
SPECIAL FEATURES: CMOS PARALLEL/SERIAL FIFO USING 5O MHZ SERIAL INPUT/OUTPUT FREQUENCY
SPECIAL TEST FEATURES: IDT42103L35J IS 100 PERCENT UPSCREENED PER PARA 3.1.1 OF DWG 89954/35
Related Searches:
205-1032
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962015195543
NSN
5962-01-519-5543
MFG
ROCKWELL COLLINS INC. DIV GOVERNMENT SYSTEMS - DALLAS
Description
CRITICALITY CODE JUSTIFICATION: CBBL
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE
INCLOSURE CONFIGURATION: PIN GRID ARRAY
INCLOSURE MATERIAL: CERAMIC
MEMORY CAPACITY: 8K X 16
MEMORY DEVICE TYPE: RAM
OPERATING TEMP RANGE: -40.0 TO 85.0 DEG CELSIUS
PART NAME ASSIGNED BY CONTROLLING AGENCY: HIGH-SPEED 8 K X 16 DUAL PORT STATIC RAM
TERMINAL TYPE AND QUANTITY: 84 PIN
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 4.5 VOLTS MINIMUM TOTAL SUPPLY AND 5.5 VOLTS MAXIMUM TOTAL SUPPLY
Related Searches:
205-1032-010
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962015195543
NSN
5962-01-519-5543
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
CRITICALITY CODE JUSTIFICATION: CBBL
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE
INCLOSURE CONFIGURATION: PIN GRID ARRAY
INCLOSURE MATERIAL: CERAMIC
MEMORY CAPACITY: 8K X 16
MEMORY DEVICE TYPE: RAM
OPERATING TEMP RANGE: -40.0 TO 85.0 DEG CELSIUS
PART NAME ASSIGNED BY CONTROLLING AGENCY: HIGH-SPEED 8 K X 16 DUAL PORT STATIC RAM
TERMINAL TYPE AND QUANTITY: 84 PIN
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 4.5 VOLTS MINIMUM TOTAL SUPPLY AND 5.5 VOLTS MAXIMUM TOTAL SUPPLY
Related Searches:
IDT7025L35GI
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962015195543
NSN
5962-01-519-5543
MFG
INTEGRATED DEVICE TECHNOLOGY INC
Description
CRITICALITY CODE JUSTIFICATION: CBBL
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE
INCLOSURE CONFIGURATION: PIN GRID ARRAY
INCLOSURE MATERIAL: CERAMIC
MEMORY CAPACITY: 8K X 16
MEMORY DEVICE TYPE: RAM
OPERATING TEMP RANGE: -40.0 TO 85.0 DEG CELSIUS
PART NAME ASSIGNED BY CONTROLLING AGENCY: HIGH-SPEED 8 K X 16 DUAL PORT STATIC RAM
TERMINAL TYPE AND QUANTITY: 84 PIN
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 4.5 VOLTS MINIMUM TOTAL SUPPLY AND 5.5 VOLTS MAXIMUM TOTAL SUPPLY
Related Searches:
5962H88628
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962015195617
NSN
5962-01-519-5617
MFG
DLA LAND AND MARITIME OPNS SUPPORT GROUP DOCUMENT CONTROL UNIT
Description
CRITICALITY CODE JUSTIFICATION: CBBL
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: 5962H8862801XA
DESIGN FUNCTION AND QUANTITY: 1 CONTROL
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE AND RADIATION HARDENED
INCLOSURE CONFIGURATION: PIN GRID ARRAY
INCLOSURE MATERIAL: SILICON
MANUFACTURERS CODE: 67268
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: 5962H88628
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
SPEC/STD CONTROLLING DATA:
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 84 PIN
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 4.5 VOLTS MINIMUM TOTAL SUPPLY AND 5.5 VOLTS MAXIMUM TOTAL SUPPLY
Related Searches:
5962H8862801XA
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962015195617
NSN
5962-01-519-5617
MFG
DLA LAND AND MARITIME OPNS SUPPORT GROUP DOCUMENT CONTROL UNIT
Description
CRITICALITY CODE JUSTIFICATION: CBBL
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: 5962H8862801XA
DESIGN FUNCTION AND QUANTITY: 1 CONTROL
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE AND RADIATION HARDENED
INCLOSURE CONFIGURATION: PIN GRID ARRAY
INCLOSURE MATERIAL: SILICON
MANUFACTURERS CODE: 67268
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: 5962H88628
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
SPEC/STD CONTROLLING DATA:
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 84 PIN
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 4.5 VOLTS MINIMUM TOTAL SUPPLY AND 5.5 VOLTS MAXIMUM TOTAL SUPPLY
Related Searches:
UT1553BCRTGAH
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962015195617
NSN
5962-01-519-5617
MFG
AEROFLEX COLORADO SPRINGS INC
Description
CRITICALITY CODE JUSTIFICATION: CBBL
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: 5962H8862801XA
DESIGN FUNCTION AND QUANTITY: 1 CONTROL
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE AND RADIATION HARDENED
INCLOSURE CONFIGURATION: PIN GRID ARRAY
INCLOSURE MATERIAL: SILICON
MANUFACTURERS CODE: 67268
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: 5962H88628
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
SPEC/STD CONTROLLING DATA:
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 84 PIN
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 4.5 VOLTS MINIMUM TOTAL SUPPLY AND 5.5 VOLTS MAXIMUM TOTAL SUPPLY
Related Searches:
DS2433-Z01
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962015195673
NSN
5962-01-519-5673
MFG
DALLAS SEMICONDUCTOR CORPORATION DBA MAXIM DALLAS DIRECT
Description
BODY WIDTH: 0.150 INCHES MINIMUM
III OVERALL LENGTH: 0.750 INCHES MINIMUM AND 0.800 INCHES MAXIMUM
MEMORY CAPACITY: 4096
MEMORY DEVICE TYPE: EEPROM
OPERATING TEMP RANGE: -40.0 TO 85.0 DEG CELSIUS
TERMINAL TYPE AND QUANTITY: 3 PIN
Related Searches:
PS278389-07
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962015195673
NSN
5962-01-519-5673
MFG
CAE INC
Description
BODY WIDTH: 0.150 INCHES MINIMUM
III OVERALL LENGTH: 0.750 INCHES MINIMUM AND 0.800 INCHES MAXIMUM
MEMORY CAPACITY: 4096
MEMORY DEVICE TYPE: EEPROM
OPERATING TEMP RANGE: -40.0 TO 85.0 DEG CELSIUS
TERMINAL TYPE AND QUANTITY: 3 PIN
Related Searches:
050200
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962015195674
NSN
5962-01-519-5674
MFG
CONVERTEAM LTD
Description
BODY OUTSIDE DIAMETER: 17.35 MILLIMETERS NOMINAL
MEMORY CAPACITY: 4096
MEMORY DEVICE TYPE: EEPROM
OPERATING TEMP RANGE: -40.0 TO 85.0 DEG CELSIUS
TERMINAL TYPE AND QUANTITY: 1 BONDING PAD
Related Searches:
359133
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962015195674
NSN
5962-01-519-5674
MFG
THALES UK LTD DEFENCE & SECURITY C4I SYSTEMS DIVISION DSC
Description
BODY OUTSIDE DIAMETER: 17.35 MILLIMETERS NOMINAL
MEMORY CAPACITY: 4096
MEMORY DEVICE TYPE: EEPROM
OPERATING TEMP RANGE: -40.0 TO 85.0 DEG CELSIUS
TERMINAL TYPE AND QUANTITY: 1 BONDING PAD
