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5961-00-111-4357
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44-020506-01
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961001114357
NSN
5961-00-111-4357
44-020506-01
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961001114357
NSN
5961-00-111-4357
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV ES DEFENSIVE SYSTEMS DIVISION
Description
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
Related Searches:
S23262
TRANSISTOR
NSN, MFG P/N
5961001110455
NSN
5961-00-111-0455
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: SUPPORT EQUIPMENT, B-1 AIRCRAFT; HELICOPTER, USCG SEARCH AND RESCUE, HH-60J; COMMUNICATIONS TERMINAL, SATELLITE AN/GSC-39(V)1; HELICOPTER, CARRIER BASED ASW, SH-60F; LOS ANGELES CLASS SSN (688); LANDING CRAFT AIR CUSHION (LCAC); RADAR, SERIES
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.359 INCHES NOMINAL
OVERALL LENGTH: 0.250 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL; JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULAT
Related Searches:
SS2123
TRANSISTOR
NSN, MFG P/N
5961001110455
NSN
5961-00-111-0455
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: SUPPORT EQUIPMENT, B-1 AIRCRAFT; HELICOPTER, USCG SEARCH AND RESCUE, HH-60J; COMMUNICATIONS TERMINAL, SATELLITE AN/GSC-39(V)1; HELICOPTER, CARRIER BASED ASW, SH-60F; LOS ANGELES CLASS SSN (688); LANDING CRAFT AIR CUSHION (LCAC); RADAR, SERIES
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.359 INCHES NOMINAL
OVERALL LENGTH: 0.250 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL; JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULAT
Related Searches:
528-0668-001
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961001110466
NSN
5961-00-111-0466
528-0668-001
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961001110466
NSN
5961-00-111-0466
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
SEMICONDUCTOR DEVICE ASSEMBLY
Related Searches:
970901CC
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001111935
NSN
5961-00-111-1935
MFG
NACCO MATERIALS HANDLING GROUP INC DBA YALE MATERIALS HANDLING DIV NACCO MATERIALS HANDLING GROUP INC.
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
JAN1N3671A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001112040
NSN
5961-00-111-2040
JAN1N3671A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001112040
NSN
5961-00-111-2040
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 12.00 AMPERES MAXIMUM AVERAGE ON-STATE CURRENT, 180 DEGREES CONDUCTION ANGLE, AVERAGE OVER A FULL 60-HZ CYCLE
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N3671A
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MILS19500-260
OVERALL LENGTH: 0.405 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/260 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 MAXIMUM
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JAN1N3671AA
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001112040
NSN
5961-00-111-2040
JAN1N3671AA
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001112040
NSN
5961-00-111-2040
MFG
ADELCO ELEKTRONIK GMBH
Description
CURRENT RATING PER CHARACTERISTIC: 12.00 AMPERES MAXIMUM AVERAGE ON-STATE CURRENT, 180 DEGREES CONDUCTION ANGLE, AVERAGE OVER A FULL 60-HZ CYCLE
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N3671A
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MILS19500-260
OVERALL LENGTH: 0.405 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/260 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 MAXIMUM
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CR101
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001112066
NSN
5961-00-111-2066
MFG
R L C ELECTRONICS INC.
Description
CURRENT RATING PER CHARACTERISTIC: 15.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: COMPRESSION
OVERALL HEIGHT: 1.000 INCHES NOMINAL
OVERALL LENGTH: 2.380 INCHES MAXIMUM
OVERALL WIDTH: 1.000 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1200.0 MAXIMUM REVERSE VOLTAGE, PEAK
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CR102
HOLDER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961001112067
NSN
5961-00-111-2067
MFG
R L C ELECTRONICS INC.
Description
HOLDER,SEMICONDUCTOR DEVICE
Related Searches:
24712
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001113405
NSN
5961-00-111-3405
MFG
EATON CORP INFORMATION MANAGEMENT SYSTEMS DIV MICROWAVE COMPONENTS
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
1N3111
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001114282
NSN
5961-00-111-4282
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
CURRENT RATING PER CHARACTERISTIC: 150.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.500 INCHES
OVERALL DIAMETER: 1.031 INCHES MAXIMUM
OVERALL LENGTH: 2.500 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 1.063 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 UNINSULATED WIRE LEAD W/TERMINAL LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
RELEASE4268
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001114282
NSN
5961-00-111-4282
RELEASE4268
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001114282
NSN
5961-00-111-4282
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 150.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.500 INCHES
OVERALL DIAMETER: 1.031 INCHES MAXIMUM
OVERALL LENGTH: 2.500 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 1.063 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 UNINSULATED WIRE LEAD W/TERMINAL LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
ST33054LB0652
TRANSISTOR
NSN, MFG P/N
5961001114321
NSN
5961-00-111-4321
MFG
NORTHROP GRUMMAN CORP ELECTRONIC SYSTEMS DEFENSIVE SYSTEM DIV
Description
DESIGN CONTROL REFERENCE: ST33054LB0652
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 22915
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
38479
TRANSISTOR
NSN, MFG P/N
5961001114347
NSN
5961-00-111-4347
MFG
HARRIS CORP SEMICONDUCTOR SECTOR
Description
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 94756
MFR SOURCE CONTROLLING REFERENCE: 472-0926-002
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
Related Searches:
472-0926-002
TRANSISTOR
NSN, MFG P/N
5961001114347
NSN
5961-00-111-4347
MFG
BOEING COMPANY THE DBA BOEING DIV DEFENSE SPACE & SECURITY - NETWORK & SPACE SYSTEMS
Description
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 94756
MFR SOURCE CONTROLLING REFERENCE: 472-0926-002
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
Related Searches:
SP4479
TRANSISTOR
NSN, MFG P/N
5961001114347
NSN
5961-00-111-4347
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 94756
MFR SOURCE CONTROLLING REFERENCE: 472-0926-002
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
Related Searches:
472-1091-001
TRANSISTOR
NSN, MFG P/N
5961001114348
NSN
5961-00-111-4348
MFG
BOEING COMPANY THE DBA BOEING DIV DEFENSE SPACE & SECURITY - NETWORK & SPACE SYSTEMS
Description
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 94756
MFR SOURCE CONTROLLING REFERENCE: 472-1091-001
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 2 PIN
Related Searches:
SJ1566H
TRANSISTOR
NSN, MFG P/N
5961001114348
NSN
5961-00-111-4348
MFG
FREESCALE SEMICONDUCTOR INC.
Description
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 94756
MFR SOURCE CONTROLLING REFERENCE: 472-1091-001
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 2 PIN
Related Searches:
679-4
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961001114357
NSN
5961-00-111-4357
679-4
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961001114357
NSN
5961-00-111-4357
MFG
MICRO USPD INC
Description
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
Related Searches:
SA2249
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961001114357
NSN
5961-00-111-4357
SA2249
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961001114357
NSN
5961-00-111-4357
MFG
SEMTECH CORPUS CHRISTI.A. DE C.V. REYNOSA FACILITY
Description
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
