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5961-01-148-3992
20 Products
3510018-023
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011483992
NSN
5961-01-148-3992
3510018-023
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011483992
NSN
5961-01-148-3992
MFG
COHU INC
Description
CURRENT RATING PER CHARACTERISTIC: 1.50 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.104 INCHES MINIMUM AND 0.140 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
3510018-025
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011483993
NSN
5961-01-148-3993
3510018-025
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011483993
NSN
5961-01-148-3993
MFG
COHU INC
Description
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.265 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 2000.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
3510036-071
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011483994
NSN
5961-01-148-3994
3510036-071
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011483994
NSN
5961-01-148-3994
MFG
COHU INC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
3510072-002
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011483995
NSN
5961-01-148-3995
3510072-002
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011483995
NSN
5961-01-148-3995
MFG
COHU INC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
3510076-007
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011483996
NSN
5961-01-148-3996
3510076-007
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011483996
NSN
5961-01-148-3996
MFG
COHU INC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
3510018-024
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011483997
NSN
5961-01-148-3997
3510018-024
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011483997
NSN
5961-01-148-3997
MFG
COHU INC
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.205 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1600.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
1345401-04
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011483998
NSN
5961-01-148-3998
1345401-04
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011483998
NSN
5961-01-148-3998
MFG
NACCO MATERIALS HANDLING GROUP INC DBA YALE MATERIALS HANDLING DIV NACCO MATERIALS HANDLING GROUP INC.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
45527-400-F/S
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011483998
NSN
5961-01-148-3998
45527-400-F/S
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011483998
NSN
5961-01-148-3998
MFG
MICROPAC INDUSTRIES INC.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
106.794-1
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011484000
NSN
5961-01-148-4000
106.794-1
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011484000
NSN
5961-01-148-4000
MFG
WARD LEONARD ELECTRIC COMPANY INC.
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 400.00 AMPERES PEAK FORWARD SURGE CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 PEAK INVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
OVERALL HEIGHT: 0.427 INCHES NOMINAL
OVERALL LENGTH: 1.125 INCHES NOMINAL
OVERALL WIDTH: 1.125 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 4 QUICK DISCONNECT, MALE
Related Searches:
JANTXM19500/469-05
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011484000
NSN
5961-01-148-4000
JANTXM19500/469-05
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011484000
NSN
5961-01-148-4000
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 400.00 AMPERES PEAK FORWARD SURGE CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 PEAK INVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
OVERALL HEIGHT: 0.427 INCHES NOMINAL
OVERALL LENGTH: 1.125 INCHES NOMINAL
OVERALL WIDTH: 1.125 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 4 QUICK DISCONNECT, MALE
Related Searches:
PD4000
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011484000
NSN
5961-01-148-4000
PD4000
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011484000
NSN
5961-01-148-4000
MFG
PD & E ELECTRONICS LLC
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 400.00 AMPERES PEAK FORWARD SURGE CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 PEAK INVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
OVERALL HEIGHT: 0.427 INCHES NOMINAL
OVERALL LENGTH: 1.125 INCHES NOMINAL
OVERALL WIDTH: 1.125 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 4 QUICK DISCONNECT, MALE
Related Searches:
S6458-10
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011484000
NSN
5961-01-148-4000
S6458-10
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011484000
NSN
5961-01-148-4000
MFG
ST-SEMICON INC
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 400.00 AMPERES PEAK FORWARD SURGE CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 PEAK INVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
OVERALL HEIGHT: 0.427 INCHES NOMINAL
OVERALL LENGTH: 1.125 INCHES NOMINAL
OVERALL WIDTH: 1.125 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 4 QUICK DISCONNECT, MALE
Related Searches:
VK1048
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011484000
NSN
5961-01-148-4000
VK1048
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011484000
NSN
5961-01-148-4000
MFG
MICRO QUALITY SEMICONDUCTOR INC SUB OF MICROSEMI CORP
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 400.00 AMPERES PEAK FORWARD SURGE CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 PEAK INVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
OVERALL HEIGHT: 0.427 INCHES NOMINAL
OVERALL LENGTH: 1.125 INCHES NOMINAL
OVERALL WIDTH: 1.125 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 4 QUICK DISCONNECT, MALE
Related Searches:
005987
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961011484001
NSN
5961-01-148-4001
MFG
BIG JOE MFG CO
Description
MAJOR COMPONENTS: DIODE 3; TERMINAL BLOCK 1
Related Searches:
393454
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011484004
NSN
5961-01-148-4004
MFG
FLUKE CORPORATION
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL AND PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.219 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM PEAK GATE VOLTAGE
Related Searches:
F2781
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011484004
NSN
5961-01-148-4004
MFG
SOLITRON DEVICES INC.
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL AND PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.219 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM PEAK GATE VOLTAGE
Related Searches:
J9016
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011484004
NSN
5961-01-148-4004
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL AND PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.219 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM PEAK GATE VOLTAGE
Related Searches:
TCR502
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011484004
NSN
5961-01-148-4004
MFG
CRYSTALONICS INC.
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL AND PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.219 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM PEAK GATE VOLTAGE
Related Searches:
70-12415-00
BRACKET,SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961011484775
NSN
5961-01-148-4775
70-12415-00
BRACKET,SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961011484775
NSN
5961-01-148-4775
MFG
COMPAQ FEDERAL LLC
Description
BRACKET,SEMICONDUCTOR DEVICE SET
Related Searches:
2N5864
TRANSISTOR
NSN, MFG P/N
5961011484797
NSN
5961-01-148-4797
MFG
OECO LLC DBA PACIFIC SCIENTIFIC OECO
Description
CURRENT RATING PER CHARACTERISTIC: 1.50 AMPERES MAXIMUM COLLECTOR CURRENT, RMS VALUE OF ALTERNATION COMPONENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.5 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.210 INCHES MAXIMUM
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TRANSFER RATIO: 50.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER AND 500.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 90.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 5.0 MAXIMUM
