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5961-01-148-4798
20 Products
4880374E62
TRANSISTOR
NSN, MFG P/N
5961011484798
NSN
5961-01-148-4798
MFG
MOTOROLA INC. DIV U.S. FEDERAL GOVERNMENT MARKETS DIVISION
Description
TRANSISTOR
Related Searches:
48R00869650
TRANSISTOR
NSN, MFG P/N
5961011484798
NSN
5961-01-148-4798
MFG
MOTOROLA COMMUNICATIONS GROUP PARTS DEPT DIV OF MOTOROLA INC
Description
TRANSISTOR
Related Searches:
M9650
TRANSISTOR
NSN, MFG P/N
5961011484798
NSN
5961-01-148-4798
MFG
FREESCALE SEMICONDUCTOR INC.
Description
TRANSISTOR
Related Searches:
KV2002D0-7
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011484800
NSN
5961-01-148-4800
KV2002D0-7
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011484800
NSN
5961-01-148-4800
MFG
MICROSEMI CORP-MASSACHUSETTS DBA MICROSEMI-LOWELL DIV MICROSEMI - LOWELL
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
KS4524D0-7
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011484801
NSN
5961-01-148-4801
KS4524D0-7
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011484801
NSN
5961-01-148-4801
MFG
MICROSEMI CORP-MASSACHUSETTS DBA MICROSEMI-LOWELL DIV MICROSEMI - LOWELL
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
KS7523
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011484802
NSN
5961-01-148-4802
MFG
KSW ELECTRONICS CORP
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
5099821-02
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011484804
NSN
5961-01-148-4804
5099821-02
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011484804
NSN
5961-01-148-4804
MFG
NACCO MATERIALS HANDLING GROUP INC DBA YALE MATERIALS HANDLING DIV NACCO MATERIALS HANDLING GROUP INC.
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.625 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD W/TERMINAL LUG
Related Searches:
JAN1N968B-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011484908
NSN
5961-01-148-4908
JAN1N968B-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011484908
NSN
5961-01-148-4908
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 6.20 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N968B-1
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: VOLTAGE REGULATOR
III END ITEM IDENTIFICATION: PP815/TTC-39 80058
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/117
OVERALL DIAMETER: 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/117 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER
Related Searches:
JAN1N2827RB
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011484909
NSN
5961-01-148-4909
JAN1N2827RB
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011484909
NSN
5961-01-148-4909
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 290.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N2827RB
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: VOLTAGE REGULATOR
III END ITEM IDENTIFICATION: SCRAM BREAKER
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/114
OVERALL HEIGHT: 0.380 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 50.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-
Related Searches:
2865-030
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961011484910
NSN
5961-01-148-4910
2865-030
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961011484910
NSN
5961-01-148-4910
MFG
RELIANCE COMM/TEC CORP LORAIN PRODUCTS DIV
Description
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM GATE TRIGGER CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND MOUNTING HARDWARE
III END ITEM IDENTIFICATION: AN/FSA-58
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 0.475 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.552 INCHES MINIMUM AND 0.562 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 2 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM OFF-STATE VOLTAGE, RMS TOTAL
Related Searches:
2865-030-00
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961011484910
NSN
5961-01-148-4910
2865-030-00
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961011484910
NSN
5961-01-148-4910
MFG
LORAIN ELECTRONICS CORP
Description
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM GATE TRIGGER CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND MOUNTING HARDWARE
III END ITEM IDENTIFICATION: AN/FSA-58
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 0.475 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.552 INCHES MINIMUM AND 0.562 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 2 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM OFF-STATE VOLTAGE, RMS TOTAL
Related Searches:
SC250M
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961011484910
NSN
5961-01-148-4910
SC250M
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961011484910
NSN
5961-01-148-4910
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM GATE TRIGGER CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND MOUNTING HARDWARE
III END ITEM IDENTIFICATION: AN/FSA-58
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 0.475 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.552 INCHES MINIMUM AND 0.562 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 2 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM OFF-STATE VOLTAGE, RMS TOTAL
Related Searches:
1853-0070
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011484956
NSN
5961-01-148-4956
1853-0070
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011484956
NSN
5961-01-148-4956
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
Related Searches:
SD5907
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011484956
NSN
5961-01-148-4956
SD5907
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011484956
NSN
5961-01-148-4956
MFG
FREESCALE SEMICONDUCTOR INC.
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
Related Searches:
26012270
DIODE
NSN, MFG P/N
5961011485211
NSN
5961-01-148-5211
MFG
SYSTRON-DONNER CORP MICROWAVE/INSTRUMENT DIV
Description
DIODE
Related Searches:
26011080
DIODE
NSN, MFG P/N
5961011485212
NSN
5961-01-148-5212
MFG
SYSTRON-DONNER CORP MICROWAVE/INSTRUMENT DIV
Description
DIODE
Related Searches:
26010940
DIODE
NSN, MFG P/N
5961011485213
NSN
5961-01-148-5213
MFG
SYSTRON-DONNER CORP MICROWAVE/INSTRUMENT DIV
Description
DIODE
Related Searches:
TIS97
TRANSISTOR
NSN, MFG P/N
5961011485305
NSN
5961-01-148-5305
MFG
ALLEGHENY INTL INC TRUE TEMPER HARDWARE DIV
Description
TRANSISTOR
Related Searches:
26004011
TRANSISTOR
NSN, MFG P/N
5961011485306
NSN
5961-01-148-5306
MFG
SYSTRON-DONNER CORP MICROWAVE/INSTRUMENT DIV
Description
TRANSISTOR
Related Searches:
232-69945-64
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961011485758
NSN
5961-01-148-5758
232-69945-64
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961011485758
NSN
5961-01-148-5758
MFG
THE BOEING COMPANY DBA BOEING
Description
MAJOR COMPONENTS: DIODE 6; MTG BD 1
