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5961-00-069-1986
20 Products
69-6174
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000691986
NSN
5961-00-069-1986
MFG
INTERNATIONAL RECTIFIER CORPORATION
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
HR1M
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000690888
NSN
5961-00-069-0888
MFG
L-3 COMMUNICATIONS ELECTRON TECHNOLOGIES INC. DIV L-3 COMMUNICATIONS ELECTRON TECHNOLOGIES INC
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.140 INCHES MAXIMUM
OVERALL LENGTH: 0.375 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.813 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
SC10
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000690888
NSN
5961-00-069-0888
MFG
SEMTECH CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.140 INCHES MAXIMUM
OVERALL LENGTH: 0.375 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.813 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
UT93
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000690888
NSN
5961-00-069-0888
MFG
MICRO USPD INC
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.140 INCHES MAXIMUM
OVERALL LENGTH: 0.375 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.813 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
956694-1
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961000690950
NSN
5961-00-069-0950
956694-1
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961000690950
NSN
5961-00-069-0950
MFG
SOLID STATE DEVICES INC.
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM FORWARD CURRENT, DC AND 2.00 AMPERES MAXIMUM GATE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND MOUNTING HARDWARE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 105.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 0.400 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 20.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
TERMINAL TYPE AND QUANTITY: 2 SOLDER STUD AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM FORWARD VOLTAGE, PEAK
Related Searches:
956694-3
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961000690950
NSN
5961-00-069-0950
956694-3
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961000690950
NSN
5961-00-069-0950
MFG
HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE-MINNEAPOLIS
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM FORWARD CURRENT, DC AND 2.00 AMPERES MAXIMUM GATE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND MOUNTING HARDWARE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 105.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 0.400 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 20.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
TERMINAL TYPE AND QUANTITY: 2 SOLDER STUD AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM FORWARD VOLTAGE, PEAK
Related Searches:
SCR82
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961000690950
NSN
5961-00-069-0950
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM FORWARD CURRENT, DC AND 2.00 AMPERES MAXIMUM GATE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND MOUNTING HARDWARE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 105.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 0.400 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 20.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
TERMINAL TYPE AND QUANTITY: 2 SOLDER STUD AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM FORWARD VOLTAGE, PEAK
Related Searches:
9986799
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000691060
NSN
5961-00-069-1060
MFG
U S ARMY AVIATION AND MISSILE COMMAND
Description
DESIGN CONTROL REFERENCE: 9986799
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: MICROWAVE AND MIXER
III PRECIOUS MATERIAL: SILVER OR GOLD
MANUFACTURERS CODE: 18876
OVERALL DIAMETER: 0.215 INCHES MINIMUM AND 0.220 INCHES MAXIMUM
OVERALL LENGTH: 0.750 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
THE MANUFACTURERS DATA:
Related Searches:
1N331
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000691061
NSN
5961-00-069-1061
MFG
INTERSTATE ELECTRONICS CORPORATION
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.216 INCHES MAXIMUM
OVERALL LENGTH: 0.310 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 16.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
9986994
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000691061
NSN
5961-00-069-1061
MFG
U S ARMY AVIATION AND MISSILE COMMAND
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.216 INCHES MAXIMUM
OVERALL LENGTH: 0.310 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 16.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
014-502
TRANSISTOR
NSN, MFG P/N
5961000691530
NSN
5961-00-069-1530
MFG
AMPEX SYSTEMS CORP
Description
TRANSISTOR
Related Searches:
1-27
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961000691795
NSN
5961-00-069-1795
MFG
GENERAL DYNAMICS C4 SYSTEMS INC.
Description
MAJOR COMPONENTS: DIODE 4; MTG PLATE 1
Related Searches:
8001100003
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000691985
NSN
5961-00-069-1985
8001100003
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000691985
NSN
5961-00-069-1985
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
FD1594
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000691985
NSN
5961-00-069-1985
MFG
FAIRCHILD SEMICONDUCTOR CORP COMPONENTS GROUP SUB OF SCHLUMBERGER LTD
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
S622
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000691985
NSN
5961-00-069-1985
MFG
ITT SEMICONDUCTORS A DIVISION OF INTERNATIONAL TELEPHONE AND TELEGRAPH CORP
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
SG5377
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000691985
NSN
5961-00-069-1985
MFG
GILBERT ENGINEERING CO INC/INCON SUB OF TRANSITRON ELECTRONIC CORP
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
UG1022
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000691985
NSN
5961-00-069-1985
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
8001100002
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000691986
NSN
5961-00-069-1986
8001100002
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000691986
NSN
5961-00-069-1986
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
E1513
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000691986
NSN
5961-00-069-1986
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
G4817
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000691986
NSN
5961-00-069-1986
MFG
NAVCOM DEFENSE ELECTRONICS INC.
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
